Description
Avago Technologies’ IAM-93516 is a high linearity GaAs FET
Mixer using 0.5um enhancement mode pHEMT technology.
This device houses in a 3x3 LPCC package. The IAM-93516
has a built-in LO buer amplier and an IF amplication
stage that serve as an ideal solution for reducing board
space and delivering excellent high IIP3, gain and isolation
with a low LO drive power. The device is designed with a
dierential conguration to provide good noise immunity.
The LO port is 50 ohm matched and can be driven dier-
ential or single ended. An interstage match is introduced
between the mixer and amplier stage to allow device
tuning at the desired RF and LO frequency. The interstage
match can be a simple low pass, high pass or intermedi-
ate frequency trap. The amplier output port is 200 ohm
matched and fully dierential. The simple matching at
the RF port provides for optimum input return loss, noise
gure and IIP3 performance.
The IAM-93516 is ideally suited for frequency down con-
version for base station radio card receiver, microwave link
receiver, MMDS, modulation and demodulation for receiver
and general purpose resistive FET mixer, which require high
linearity. All devices are 100% RF and DC tested.
Features
• DC =5V @ 111mA (Typ.)
• RF =1.91 GHz, PinRF = -10 dBm;
• LO =1.7 GHz, PinLO = 0 dBm;
• IF = 210 MHz unless otherwise specied
• High Linearity: 23.1 dBm IIP3(typ)
• Conversion Gain: 9.4 dB typical
• Low Noise Figure: 11.6 dB
• Wide band operation:
• 400-3000 MHz RF & LO input
• 70 – 300 MHz IF output
• Fully dierential or single ended operation
• High P1dB: 19.3 dB typical
• Consistent RF performance over LO Power
• Low current consumption: 5V@ 111mA typical
• Excellent uniformity in product specications
• 3mm x 3mm x 0.9mm LPCC package
• MTTF > 300 years[1]
• MSL-1 and Lead-free.
Applications
• Frequency down converter for base station radio card,
microwave link transceiver, and MMDS
• Modulation and demodulation for receiver
• General purpose resistive FET mixer for other high
linearity applications
IAM - 93516
High Linearity Integrated GaAs Mixer
Data Sheet
2
1.0 Absolute Maximum Ratings [1]
Symbol Parameter Units Absolute maximum
VDSupply Voltage [2] V 7
PinRF CW RF Input Power [2] dBm 30
PinLO CW LO Input Power [2] dBm 18
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
qch_b Thermal Resistance [4] °C/W 39
2.0 Product Consistency Distribution Charts [5,6]
Figure 1. ID (mA) [7] Nominal = 111.2mA Figure 2. GAIN (dB) [8] Nominal = 9.4dB Figure 3. IIP3 (dBm) [8] Nominal = 23.1dBm
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Determined at DC quiescent conditions and TA = 25°C.
3. Board (package belly) temperature TB is 25°C. Derate 25 mW/°C for TB > 130 °C.
4. Channel-to-board thermal resistance measured using Infra Red Imaging Method and 150o C Liquid Crystal Measurement method.
Pin Connections and Package Marking
Interstage Match
Interstage Match
6
7
51
16
13
12
LO Buffer
Mixer
3pF
3pF
280 ohm
MIX_OUT+ RF+
RF -IFA_IN -
LO+
LO -
-
+VDD
MIX_OUT -
IFA_IN+
14
+VDD
2
3
Amplifier
10 11
IF -
IF+
2
-
--
Stdev=0.74
+3 Std
-3 Std
Id
frequency
107 108 109 110 111 112 113 114
0
100
200
300
400
frequency
Stdev = 0.14
-3 Std
8.8 9.0 9.2 9.4 9.6 9.8
0
30
60
90
120
150
180
+ 3 Std
frequency
Stdev = 0.5
-3 Std
21 22 23 24 25
0
30
60
90
120
150
180
+3 Std
Note:
Package marking provides orientation and identication
“M2” = Device Code
“X” = Month code indicates the month of manufacture
Top View
3
Notes:
5. Distribution data sample size is 510 samples taken from 3 dierent wafers lots. Future wafers allocated to this product may have nominal val-
ues anywhere between the upper and lower limits.
6. Measurements were made on a production test board, which represents a trade-o between optimal Gain, IIP3, NF, P1dB and isolation. Board
losses of 0.1dB at the RF input and IF amplier output have been compensated. Balun loss of 0.57dB which was obtained from the Toko’s sup-
plied s-parameter le is also compensated. The total IF amplier output loss is 0.67dB.
7. The device current is measured without LO signal. At LO=0dBm, the current reduces by around 6 to 7mA.
8. Gain, P1dB, isolation and return loss test conditions: FRF =1.91GHz, FLO = 1.7GHz, FIF = 210MHz, PinRF = -10dBm, PinLO = 0dBm.
IIP3 test condition: FRF1 = 1.91GHz, FRF2 = 1.89GHz, FLO = 1.7GHz, PinRF = -10dBm, PinLO = 0dBm.
3.0 IAM-93516 Electrical Specications[6,8]
TA = 25oC, DC = 5V, RF Freq = 1.91GHz, PinRF = -10dBm, LO Freq = 1.7GHz, PinLO = 0dBm (unless otherwise specied)
4.0 IAM-93516 Typical Performance[9,10]
TA = 25oC, DC = 5V, RF Freq = 1.91GHz, PinRF = -10dBm, LO Freq = 1.7GHz (unless otherwise specied)
Figure 4. IAM-93516 demoboard schematic optimally tuned at FRF = 1.91GHz and FLO = 1.7GHz
Symbol Parameter and Test Condition Units Min. Typ Max.
Id [7] Device Current mA 95.0 111.2 125.0
GC Conversion Gain dB 7.9 9.4 10.9
IIP3 [8] Output Third Order Intercept Point dBm 20.5 23.1 -
NF SSB Noise Figure dB - 11.6 -
P1dB Output Power at 1dB Gain Compression dBm - 19.3 -
RLRF RF Port Return Loss dB - 12.0 -
RLLO LO Port Return Loss dB - 20.0 -
RLIF IF Port Return Loss dB - 11.0 -
ISOLL-R LO-RF Isolation dB - 26.0 -
ISOLL-I LO-IF Isolation dB - 20.0 -
ISOLR-L RF-IF Isolation dB - 32.0 -
RF
1.5nH
1.5pF 3.3nH
3.3nH
1.5pF
1nH
0.4pF
39nH
40nH
18pF
22 Ohm
1.5pF
1nH
0.4pF
39nH
40nH
18pF
22 Ohm
Interstage Match
Interstage Match
IF
1000pF
1000pF
LO +
LO -
Balun Transformer
Toko B4F
617DB-1018
4
Figure 10. LO-IF Isolation vs. LO Power and Temperature
Figure 7. IIP3 vs. LO Power and Temperature Figure 8. P1dB vs. LO Power and Temperature
Figure 5. Current vs. LO Power and Temperature Figure 6. Conversion Gain vs. LO Power and Temperature
Figure 9. Noise Figure vs. LO Power and Temperature
80
85
90
95
100
105
110
115
120
125
130
-14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Power(dBm)
Id (mA)
25 C
85 C
-40 C
8.8
9.0
9.2
9.4
9.6
9.8
10
-14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Power (dBm)
Conversion Gain (dB)
25 C
-40 C
85 C
15
17
19
21
23
25
27
29
31
-14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Power (dBm)
IIP3 (dBm)
16.5
17
17.5
18
18.5
19
19.5
20
20.5
-14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Power (dBm)
P1dB (dBm)
25 C
-40 C
85 C
5
7
9
11
13
15
17
19
21
23
25
-14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Power (dBm)
NF (dB)
25 C
-40 C
85 C
5
10
15
20
25
30
-14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Power (dBm)
Isolation_LO_IF (dB)
25 C
-40 C
85 C
5
Figure 11. RF-IF Isolation vs. LO Power and Temperature Figure 12. LO-RF Isolation vs. LO Power and Temperature
Figure 13. Conversion Gain vs. RF Frequency and LO Power at
xed IF frequency[11]
Figure 14. IIP3 vs. RF Frequency and LO Power at xed IF fre-
quency [11]
Figure 15. RF-IF Isolation vs. RF Frequency and LO Power at xed
IF frequency
Figure 16. LO-IF Isolation vs. LO Frequency and LO Power at xed
IF frequency
15
20
25
30
35
40
-14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Power (dBm)
Isolation_RF_IF (dB)
25 C
-40 C
85 C
10
15
20
25
30
35
-14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Power(dBm)
Isolation_LO_RF (dB)
25 C
-40 C
85 C
0
2
4
6
8
10
12
1.6 1.7 1.8 1.9 2.0 2.1 2.2
RF Frequency (GHz)
Conversion Gain (dB)
LO= -3dBm
LO=0dBm
LO=3dBm
18
19
20
21
22
23
24
25
26
27
28
1.6 1.7 1.8 1.9 2 2.1 2.2
RF Frequency (GHz)
IIP3 (dBm)
LO= -3dBm
LO=0dBm
LO=3dBm
15
20
25
30
35
40
45
1.6 1.7 1.8 1.9 2 2.1 2.2
RF Frequency (GHz)
Isolation_RF_IF (dB)
LO=-3dBm
LO=0dBm
LO=3dBm
10
12
14
16
18
20
22
24
26
1.4 1.5 1.6 1.7 1.8 1.9 2
LO Frequency (GHz)
Isolation_LO_IF (dB)
LO= -3dBm
LO=0dBm
LO=3dBm
6
Figure 17. LO-RF Isolation vs. LO Frequency and LO Power at
xed IF frequency
Figure 18. IF Return Loss vs. IF Frequency
Figure 19. LO Return Loss vs. LO Frequency Figure 20. RF Return Loss vs. RF Frequency
Notes:
9. Results shown are based on Figure 4, which is optimally tuned for optimum conversion loss, IIP3, isolation and noise gure.
10. Balun loss of 0.57 dB @ 210 MHz have been deembedded into the IF Amplier loss.
11. LO is low side injected for 210MHz IF frequency.
20
22
24
26
28
30
32
1.4 1.5 1.6 1.7 1.8 1.9 2
LO Frequency (GHz)
Isolation_LO_RF (dB)
LO=-3dBm
LO=0dBm
LO=3dBm
-16
-14
-12
-10
-8
-6
-4
-2
0
50 100 150 200 250 300 350 400 450 500
IF Frequency (MHz)
IF_IRL (dB)
35
30
25
20
15
10
5
0
1 2 3 4 5 6
LO Frequency (GHz)
LO_IRL (dB)
0
-30
-25
-20
-15
-10
-5
0
1.6 1.7 1.8 1.9 2 2.1 2.2
RF Frequency (GHz)
RF_IRL (dB)
7
5.0 IAM-93516 Typical Harmonic Suppresion Table[12,13]
6.0 IAM-93516 Pin Description
Figure 21. Harmonic Suppresion Table
RF Harmonics
LO Harmonics
0 1 2 3 4 5
0 0.00 28.30 5.59 21.33 32.02
1 39.96 0.00 57.37 52.89 53.95 59.01
2 79.46 80.38 52.71 79.39 >90 87.51
3 >90 >90 >90 83.75 >90 >90
4 >90 >90 >90 >90 >90 >90
5 >90 >90 >90 >90 >90 >90
Pin Name Description
1, 12 IFA_IN+ / IFA_IN- IF Amplier inputs. This is the signal output from the Mixer/IF Ampli-
er interstage match. (See product application note)
2, 11 RF+ / RF- RF dierential signal input. Simple matching is required for good RF
return loss. (See product application note)
3, 10 MIX_OUT+ / MIX_OUT- Signal at mixer output.This signal will be fed into the Mixer/IF Ampli-
er interstage match. (See product application note)
4,9, 15 GND Ground connection. For normal operation, all electrical grounds
must be connected together.
5 VDD1 DC Power supply for the mixer circuit.
6, 7 LO+ / LO - 50 Ohm Local oscillator input. The local oscillator can be driven
dierential or single ended.
8 NC No contact.
13, 16 IF + / IF- 200 Ohm dierential amplier output. A 4:1 balun is required to con-
vert the dierential output to single ended. (See product application
note)
14 VDD2 DC Power supply for the IF amplier circuit.
Notes:
12. The harmonic suppression table shows the spurious signals present due to the mixing of the RF and LO at down conversion mode.
13. Test conditions
a. RF = 1.91GHz @ -10dBm
b. LO = 1.7GHz @ 0 dBm
c. RF and LO Intermodulation Harmonics are referenced to the signal level produced by the down converted IF signal at 210MHz at the IF
amplier output
d. LO Harmonics are referenced to the signal level of the LO signal at 1.7GHz at the IF amplier output.
8
PCB layout and Stencil Design
LPCC 3x3 Package Dimensions
E2
Bottom View
Top View
Side View
D2
A3
A1
A
E
2
D
2
D2
2
E2
2
E
D
k
e
INDEX AREA
(D/2 X E/2)
SEATING PLANE
e
2
DIMENSIONS ARE IN MILLIMETERS
1GL 3X3-0.50
MIN.
0.80
2.90
1.70
2.90
1.70
0
0.20
NOM.
0.90
3.00
1.80
3.00
1.80
0.50 BSC.
0.02
0.20 REF.
MAX.
1.00
3.10
1.90
3.10
1.90
0.05
REF.
A
D
D2
E
E2
e
A1
A3
k
PACKAGE
9
Device Orientation
Tape Dimensions
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
C
L
0.3±0.05
3.3±0.1
1.55±0.1
1.6±0.1
R 0.3
Typical
�1.55±0.05
2.0±0.1 [1] 4.0±0.1[2]
1.75±0.1
5.5±0.1[1]
12.0±0.3
3.3±0.1
8.0±0.1
Note:
I. Measured from centerline of sprocket hole to centerline of pocket.
II. Cumulative tolerance of 10 sprocket hole is ± 0.20 .
III. Measured from centerline of sprocket hole to centerline of pocket.
IV. Other material available.
V. All dimension in millimeter unless otherwise stated.
Part Number No. Of Devices Container
IAM-93516-TR1 1000 7” Reel
IAM-93516-TR2 5000 13” Reel
IAM-93516-BLK 100 Antistatic Bag
Part Number Ordering Information
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
5989-2800EN - March 29, 2006