CMOS 12-Bit Multiplying
DIGITAL-TO-ANALOG CONVERTER
Microprocessor Compatible
FEATURES
FOUR-QUADRANT MULTIPLICATION
LOW-GAIN TC: 2ppm/°C typ
MONOTONICITY ENSURED OVER TEMPERATURE
SINGLE 5V TO 15V SUPPLY
TTL/CMOS LOGIC COMPATIBLE
LOW OUTPUT LEAKAGE: 10nA max
LOW OUTPUT CAPACITANCE: 70pF max
DIRECT REPLACEMENT FOR THE AD7545,
PM-7545
DESCRIPTION
The DAC7545 is a low-cost, CMOS, 12-bit, four-quadrant
multiplying, digital-to-analog converter (DAC) with input data
latches. The input data is loaded into the DAC as a 12-bit
data word. The data flows through to the DAC when both the
chip select (
CS
) and the write (
WR
) pins are at a logic low.
Laser-trimmed thin-film resistors and excellent CMOS volt-
age switches provide true 12-bit integral and differential
linearity. The device operates on a single +5V to +15V supply
and is available in an SO-20 package; devices are specified
over the commercial temperature range.
The DAC7545 is well suited for battery-powered or other low-
power applications because the power dissipation is less than
0.5mW when used with CMOS logic inputs and VDD = +5V.
12-Bit
Multiplying DAC AGND
OUT 1
DB
11
-DB
0
(Pins 4-15)
WR
CS
17 Input
Data Latches
12
12
16
19
V
REF
20
R
FB
1
2
18
3
V
DD
DGND
SBAS150A – AUGUST 1987 – REVISED FEBRUARY 2003
www.ti.com
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1987-2003, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DAC7545
DAC7545
DAC7545
DAC7545
2SBAS150A
www.ti.com
ABSOLUTE MAXIMUM RATINGS(1)
TA = +25°C, unless otherwise noted.
VDD to DGND ...........................................................................–0.3V, +17
Digital Input to DGND ............................................................... –0.3V, VDD
VRFB, VREF, to DGND ........................................................................ ±25V
VPIN 1 to DGND ........................................................................ –0.3V, VDD
AGND to DGND ........................................................................ –0.3V, VDD
Power Dissipation: Any Package to +75°C .................................... 450mW
Derates above +75°C by................................ 6mW/°C
Operating Temperature:
Commercial J, K, L, and GL........................................... –40°C to +85°C
Storage Temperature...................................................... –65°C to +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
NOTE: (1) Stresses above those listed above may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at
these or any other condition above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
SPECIFIED
RELATIVE GAIN ERROR (LSB) PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT ACCURACY (LSB) VDD = +5V PACKAGE-LEAD DESIGNATOR(1) RANGE MARKING NUMBER MEDIA, QUANTITY
DAC7545 ±2±20 SO-20 DW –40°C to +85°C DAC7545JU DAC7545JU Rails, 38
"±1±10 " " " DAC7545KU DAC7545KU Rails, 38
DAC7545 ±1/2 ±5 SO-20 DW –40°C to +85°C DAC7545LU DAC7545LU Rails, 38
"±1/2 ±2 " " " DAC7545GLU DAC7545GLU Rails, 38
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.
PACKAGE/ORDERING INFORMATION
PIN CONNECTIONS
DAC7545
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
OUT 1
AGND
DGND
(MSB) DB11
DB10
DB9
DB8
DB7
DB6
DB5
RFB
VREF
VDD
WR
CS
DB0 (LSB)
DB1
DB2
DB3
DB4
Top View SO
WRITE CYCLE TIMING DIAGRAM
Mode Selection
Write Mode Hold Mode
CS
and
WR
low, DAC responds Either
CS
or
WR
high, data bus to
Data Bus (DB0-DB11) inputs. (DB0-DB11) is locked out; DAC
holds last data present when
WR
or
CS
assumed high state.
NOTES: VDD = +5V, tR = tF = 20ns. VDD = +15V, tR = tF = 40ns. All inputs signal
rise and fall times measured from 10% to 90% of VDD. Timing measurement
reference level is (VIH + VIL)/2.
t
DS
t
DH
VIH
VIL
Data
Valid
V
DD
0
t
WR
t
CS
t
CH
V
DD
0
V
DD
0
Data In
(DB
0
-DB
11
)
WR
CS
DAC7545 3
SBAS150A www.ti.com
ELECTRICAL CHARACTERISTICS
VREF = +10V, VOUT 1 = 0V, and ACOM = DCOM, unless otherwise specified.
NOTES: (1) Temperature ranges—J, K, L, and GL: –40°C to +85°C. (2) This includes the effect of 5ppm max, gain TC. (3) Ensured but not tested. (4) DB0-DB11 = 0V
to VDD or VDD to 0V. (5) Typical. (6) Minimum. (7) Logic inputs are MOS gates. Typical input current (+25°C) is less than 1nA. (8) Sample tested at +25°C to ensure
compliance.
DAC7545
VDD = +5V VDD = +15V
PARAMETER GRADE TA = +25°CT
MAX-TMIN(1) TA = +25°CT
MAX-TMIN(1) UNITS TEST CONDITIONS/COMMENTS
STATIC PERFORMANCE
Resolution All 12 12 12 12 Bits
Accuracy J ±2±2±2±2LSB
K ±1±1±1±1LSB
L±1/2 ±1/2 ±1/2 ±1/2 LSB
GL ±1/2 ±1/2 ±1/2 ±1/2 LSB
Differential Nonlinearity J ±4±4±4±4 LSB 10-Bit Monotonic, TMIN to TMAX
K±1±1±1±1 LSB 10-Bit Monotonic, TMIN to TMAX
L±1±1±1±1 LSB 12-Bit Monotonic, TMIN to TMAX
GL ±1±1±1±1 LSB 12-Bit Monotonic, TMIN to TMAX
Gain Error (with internal RFB)(2) J±20 ±20 ±25 ±25 LSB DAC register loaded with FFFH.
K±10 ±10 ±15 ±15 LSB Gain error is adjustable using
L±5±6±10 ±10 LSB the circuits in Figures 2 and 3.
GL ±2±3±6±7LSB
Gain Temperature Coefficient(3)
(Gain/Temperature) All ±5±5±10 ±10 ppm/°C Typical Value is 2ppm/°C
for VDD = +5
DC Supply Rejection(3)
(Gain/VDD) All 0.015 0.03 0.01 0.02 %/% VDD ± 5%
Output Leakage Current at Out 1 J, K, L, GL 10 50 10 50 nA DB0-DB11 = 0V; WR, CS = 0V
DYNAMIC PERFORMANCE
Current Settling Time(3) All 2 2 2 2 µs To 1/2 LSB. Out 1 Load = 100
DAC output measured from
falling edge of WR. CS = 0V.
Propagation Delay(3) (from digital input All
change to 90% of final analog output) 300 250 ns Out 1 Load = 100. CEXT = 13pF(4)
Glitch Energy All 400 250 nV-s(5) VREF = ACOM
AC Feedback at IOUT 1 All 5 5 5 5 mVp-p(5) VREF = ±10V, 10kHz Sine Wave
REFERENCE INPUT
Input Resistance (pin 19 to AGND) All 7 7 7 7 k(6)
Input Resistance TC = 300ppm/°C
(5)
25 25 25 25 k
AC OUTPUTS
Output Capacitance(3): COUT 1 All 70 70 70 70 pF DB0-DB11 = 0V; WR, CS = 0V
COUT 2 All 200 200 200 200 pF DB0-DB11 = VDD; WR, CS = 0V
DIGITAL INPUTS
VIH (Input HIGH Voltage) All 2.4 2.4 13.5 13.5 V(6)
VIL (Input LOW Voltage) All 0.8 0.8 1.5 1.5 V
IIN (Input Current)(7) All ±1±10 ±1±10 µAV
IN = 0V or VDD
Input Capacitance(3): DB0-DB11 All 5 5 5 5 pF VIN = 0V
WR, CS All 20 20 20 20 pF VIN = 0V
SWITCHING CHARACTERISTICS(8)
Chip Select to Write Setup Time, tCS All 280 380 180 200 ns(6) See Timing Diagram
200 270 120 150 ns(5)
Chip Select to Write Hold Time, tCH All 0 0 0 0 ns(6)
Write Pulse Width, tWR All 250 400 160 240 ns(6) tCS tWR, tCH 0
175 280 100 170 ns(5)
Data Setup Time, tDS All 140 210 90 120 ns(6)
100 150 60 80 ns(5)
Data Hold Time, tDH All 10 10 10 10 ns(6)
POWER SUPPLY, IDD All 2 2 2 2 mA All Digital Inputs VIL or VIH
All 100 500 100 500 µA All Digital Inputs 0V or VDD
All 10 10 10 10 µA(5) All Digital Inputs 0V or VDD
DAC7545
4SBAS150A
www.ti.com
FIGURE 1. Simplified DAC Circuit of the DAC7545.
RR
2R 2R
R
2R
R
2R RFB
2R
OUT 1
AGND
DB0
(LSB)
DB9DB10DB11
(MSB)
VREF
MONOTONICITY
Monotonicity assures that the analog output will increase
or stay the same for increasing digital input codes. The
DAC7545 is ensured monotonic to 12 bits, except the
J grade is specified to be 10-bit monotonic.
POWER-SUPPLY REJECTION
Power-supply rejection is the measure of the sensitivity of the
output (full-scale) to a change in the power-supply voltage.
CIRCUIT DESCRIPTION
Figure 1 shows a simplified schematic of the DAC portion of
the DAC7545. The current from the VREF pin is switched from
OUT 1 to AGND by the FET switch. This circuit architecture
keeps the resistance at the reference pin constant and equal
to RLDR, so the reference can be provided by either a voltage
or current, AC or DC, positive or negative polarity, and have
a voltage range up to ±20V even with VDD = 5V. The RLDR is
equal to R and is typically 11kW.
The output capacitance of the DAC7545 is code dependent
and varies from a minimum value (70pF) at code 000h to a
maximum (200pF) at code FFFh.
The input buffers are CMOS inverters, designed so that
when the DAC7545 is operated from a 5V supply (VDD), the
logic threshold is TTL-compatible. Being simple CMOS in-
verters, there is a range of operation where the inverters
operate in the linear region and thus draw more supply
current than normal. Minimizing this transition time through
the linear region and insuring that the digital inputs are
operated as close to the rails as possible will minimize the
supply drain current.
DISCUSSION OF
SPECIFICATIONS
RELATIVE ACCURACY
This term (also known as end point linearity) describes the
transfer function of analog output to digital input code.
Relative accuracy describes the deviation from a straight line
after zero and full-scale have been adjusted.
DIFFERENTIAL NONLINEARITY
Differential nonlinearity is the deviation from an ideal 1LSB
change in the output, for adjacent input code changes. A
differential nonlinearity specification of 1LSB ensures mono-
tonicity.
GAIN ERROR
Gain error is the difference in measure of full-scale output
versus the ideal DAC output; the ideal output for the DAC7545
is –(4095/4096)(VREF). Gain error can be adjusted to zero
using external trims, see the Applications section.
OUTPUT LEAKAGE CURRENT
The current that appears at OUT 1 with the DAC loaded with
all zeros.
MULTIPLYING FEEDTHROUGH ERROR
The AC output error due to capacitive feedthrough from VREF
to OUT 1 with the DAC loaded with all zeros; this test is
performed using a 10kHz sine wave.
OUTPUT CURRENT SETTLING TIME
The time required for the output to settle within ±0.5 LSB
of final value from a change in code of all zeros to all ones,
or all ones to all zeros.
PROPAGATION DELAY
The delay of the internal circuitry is measured as the time
from a digital code change to the point at which the
output reaches 90% of final value.
DIGITAL-TO-ANALOG GLITCH IMPULSE
The area of the glitch energy measured in nanovolt-seconds.
Key contributions to glitch energy are internal circuitry timing
differences and charge injected from digital
logic. The measurement is performed with VREF = GND,
an OPA600 as the output op amp, and G1 (phase
compensation) = 0pF.
DAC7545 5
SBAS150A www.ti.com
APPLICATIONS
UNIPOLAR OPERATION
Figure 2 shows the DAC7545 connected for unipolar opera-
tion. The high-grade DAC7545 is specified for a 1LSB gain
error, so gain adjust is typically not needed; however, the
resistors shown are for adjusting full-scale errors. The value
of R1 should be minimized to reduce the effects of mismatch-
ing temperature coefficients between the internal and exter-
nal resistors. A range of adjustment of 1.5 times the desired
range will be adequate. For example, for a DAC7545JP, the
gain error is specified to be ±25LSB, therefore, a range of
adjustment of ±37LSB will be adequate. Equation 1 results in
a value of 458W for the potentiometer (use 500).
RRGainError
LADDER
1
4096 3=
(
)
(1)
FIGURE 2. Unipolar Binary Operation.
BINARY CODE ANALOG OUTPUT
MSB LSB
1111 1111 1111 –VIN (4095/4096)
1000 0000 0000 –VIN (2048/4096) = –1/2VIN
0000 0000 0001 –VIN (1/4096)
0000 0000 0000 0V
TABLE I. Unipolar Codes.
OPA604
VIN
R1
R2
VDD RFB
DAC7545 AGND
DGND
OUT 1
DB0-DB11
C1
33pF
+5V
VOUT
VREF
R3, R4, and R5 must match within 0.01% and must be the
same type of resistors (preferably wire-wound or metal foil),
so that the temperature coefficients match; mismatch of R3
value to R4 causes both offset and full-scale error. Mismatch
of R5 to R4 and R3 causes full-scale error.
FIGURE 3. Bipolar Operation (binary two’s complement code).
OPA604
or
1/2 OPA2604
VIN
R1
R2
VDD RFB
DAC7545 AGND
DB10-DB0
OUT 1
Data Input
C1
33pF
+5V
DB11
VREF VOUT
R3
10k
R4
20k
R5
20k
R6
5k10%
U1
(see text) 12
11
Analog Common
2
1
18 20
19
4OPA604
or
1/2 OPA2604
DATA INPUT ANALOG OUTPUT
MSB LSB
0111 1111 1111 +VIN (2047/2048)
0000 0000 0001 +VIN (1/2048)
0000 0000 0000 0V
1111 1111 1111 –VIN (1/2048)
1000 0000 0000 –VIN (2048/2048)
TABLE II. Binary Two’s Complement Code Table for Circuit
of Figure 3.
tance. Eliminating this capacitor will result in excessive ringing
and an increase in glitch energy, therefore, this capacitor must
be as small as possible to minimize settling time.
The circuit of Figure 2 can be used with input voltages up to
±20V as long as the output amplifier is biased to handle the
excursions. Table I represents the analog output for four
codes into the DAC for Figure 2.
BIPOLAR OPERATION
Figure 3 and Table II illustrate the recommended circuit and
code relationship for bipolar operation. The DAC function uses
offset binary code. The inverter, U
1
, on the MSB line converts
binary two’s complement input code to offset binary code. If the
inversion is done in software, U
1
can be omitted.
The addition of R1 will cause a negative gain error. To
compensate for this error, R2 must be added. The value of R2
should be one-third the value of R1.
The capacitor across the feedback resistor is used to compen-
sate for the phase shift due to stray capacitances of the circuit
board, the DAC output capacitance, and op amp input capaci-
DAC7545
6SBAS150A
www.ti.com
FIGURE 5. 8-Bit Processor Interface.
DAC7545
CS
DB0
DB7
WR
DB8
DB11
Latch
CS
WR
44
8
Q1(2)
8-Bit Data Bus
Q0(1)
Address Bus
Address
Decode
CPU
WR
DB7
DB0
A15
A0
NOTES: (1) Q0 = decoded address for DAC.
(2) Q1 = decoded address for latch.
FIGURE 4. Digitally Controlled Gain Block.
R
FB
DAC7545 AGND
DGND
OUT
1
DB
0
-DB
11
V
IN
WR
V
OUT
CS
16
+5V
NOTE: There must be
at least 1LSB loaded in
the DAC or the amp will
saturate due to the lack
of feedback.
OPA111
17
18
19
V
OUT
=–V
IN
DB
11
+
2DB
10
+
4DB
9
+ ••• +
8DB
0
4096
20
DIGITALLY-CONTROLLED GAIN BLOCK
Figure 4 shows a circuit for a digitally-controlled gain block.
The feedback for the op amp is made up of the FET switch
and the R-2R ladder. The input resistor to the gain block is
the RFB of the DAC7545. As the FET switch is in the
feedback loop, a zero code into the DAC will result in the op
amp having no feedback, and a saturated op amp output.
APPLICATION HINTS
CMOS DACs, such as the DAC7545, exhibit a code-depen-
dent out resistance. The effect of this is a code-dependent
differential nonlinearity at the amplifier output t h at depends on
the offset voltage, V
OS
, of the amplifier. Thus linearity depends
upon the potential of OUT 1 and AGND being exactly equal to
each other. Usually the DAC is connected to an external op
amp with the noninverting input connected to AGND. The op
amp selected should have a low input bias current and low V
OS
and V
OS
drift over temperature. The op amp offset voltage
should be less than (25 • 10
–6
)(V
REF
) over operating conditions.
Suitable op amps are the OPA37 and the OPA627 for fixed
reference applications and low-bandwidth requirement; the
OPA37 has low V
OS
and does not require an offset trim. For
wide bandwidth, high slew rate, or fast-settling applications, the
OPA604 or 1/2 OPA2604 are recommended.
Unused digital inputs must be connected to VDD or to DGND,
this prevents noise from triggering the high impedance digital
input. It is suggested that the unused digital inputs also be
given a path to ground or VDD through a 1mW resistor to
prevent the accumulation of static charge if the PC card is
unplugged from the system. In addition, in systems where
the AGND to DGND connection is on a backplane, it is
recommended that two diodes be connected in inverse
parallel between AGND and DGND.
INTERFACING
TO MICROPROCESSORS
The DAC7545 can be directly interfaced to either an 8- or 16-
bit microprocessor through its 12-bit wide data latch using
the
CS
and
WR
controls.
An 8-bit processor interface is shown in Figure 5. It uses two
memory addresses: one for the lower 8 bits and one for the
upper 4 bits of data into the DAC via the latch.
DAC7545 7
SBAS150A www.ti.com
PACKAGE DRAWING
DW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE
16 PINS SHOWN
4040000/E 08/01
Seating Plane
0.400 (10,15)
0.419 (10,65)
0.104 (2,65) MAX
1
0.012 (0,30)
0.004 (0,10)
A
8
16
0.020 (0,51)
0.014 (0,35)
0.291 (7,39)
0.299 (7,59)
9
0.010 (0,25)
0.050 (1,27)
0.016 (0,40)
(15,24)
(15,49)
PINS **
0.010 (0,25) NOM
A MAX
DIM
A MIN
Gage Plane
20
0.500
(12,70)
(12,95)
0.510
(10,16)
(10,41)
0.400
0.410
16
0.600
24
0.610
(17,78)
28
0.700
(18,03)
0.710
0.004 (0,10)
M
0.010 (0,25)
0.050 (1,27)
0° 8°
(11,51)
(11,73)
0.453
0.462
18
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0.006 (0,15).
D. Falls within JEDEC MS-013
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
DAC7545GLP OBSOLETE ZZ (BB) ZZ222 20 TBD Call TI Call TI
DAC7545GLU NRND SOIC DW 20 25 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
DAC7545GLUG4 NRND SOIC DW 20 25 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
DAC7545GLUR NRND SOIC DW 20 1000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
DAC7545GLURG4 NRND SOIC DW 20 1000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
DAC7545JP OBSOLETE ZZ (BB) ZZ222 20 TBD Call TI Call TI
DAC7545JU NRND SOIC DW 20 25 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
DAC7545JUG4 NRND SOIC DW 20 25 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
DAC7545KP OBSOLETE ZZ (BB) ZZ222 20 TBD Call TI Call TI
DAC7545KU NRND SOIC DW 20 25 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
DAC7545KUG4 NRND SOIC DW 20 25 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
DAC7545LP OBSOLETE ZZ (BB) ZZ222 20 TBD Call TI Call TI
DAC7545LU NRND SOIC DW 20 25 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
DAC7545LUG4 NRND SOIC DW 20 25 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
PACKAGE OPTION ADDENDUM
www.ti.com 4-Dec-2009
Addendum-Page 1
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 4-Dec-2009
Addendum-Page 2
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm) W
(mm) Pin1
Quadrant
DAC7545GLUR SOIC DW 20 1000 330.0 24.4 10.8 13.0 2.7 12.0 24.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DAC7545GLUR SOIC DW 20 1000 346.0 346.0 41.0
PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008
Pack Materials-Page 2
®
PACKAGE DRAWING
MPDI046
IMPORTANT NOTICE
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