MAC12MG - LITTELFUSE - Product.Network

Speciﬁcations are subject to change without notice.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12D, MAC12M, MAC12N

• Blocking Voltage to 800 Volts

• On−State Current Rating of 12 Amperes RMS at 70°C

• Uniform Gate Trigger Currents in Three Quadrants, Q1,

Q2, and Q3

• High Immunity to dv/dt − 250 V/µs Minimum at 125°C

• High Commutating di/dt − 6.5 A/ms Minimum at 125°C

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and

test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete

Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics

• Industry Standard TO−220 Package

Features

Designed for high performance full−wave ac control

applications where high noise immunity and commutating

di/dt are required.

Description

MAC12D, MAC12M, MAC12N

Functional Diagram

MT1

MT2

Additional Information

Samples

Resources

Datasheet

Pin Out

CASE 221A

STYLE 4

Speciﬁcations are subject to change without notice.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12D, MAC12M, MAC12N

Rating Symbol Value Unit

Peak Repetitive Off-State Voltage (Note 1)

(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25° to 100°C)

MAC12D

MAC12M

MAC12N

VDRM,

VRRM 400

600

800

On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 70°C) IT (RMS) 12 A

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) ITSM 100 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 41 A²sec

Peak Gate Power

(Pulse Width ≤ 1.0 µs, TC = 80°C)

PGM 16 W

Average Gate Power (t = 8.3 ms, TC = 80°C) PG (AV) 0.35 W

Operating Junction Temperature Range TJ-40 to +125 °C

Storage Temperature Range Tstg -40 to +150 °C

Maximum Ratings (TJ = 25°C unless otherwise noted)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative

potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Thermal Characteristics

Rating Symbol Value Unit

Thermal Resistance, Junction−to−Case (AC)

Junction−to−Ambient

R8JC

R8JA

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for

10 seconds TL260 °C

Speciﬁcations are subject to change without notice.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12D, MAC12M, MAC12N

Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)

Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

Peak Repetitive Blocking Current

(VD = VDRM = VRRM; Gate Open)

TJ = 25°C IDRM,

IRRM

- - 0.01

TJ = 125°C - - 2.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may

not be indicated by the Electrical Characteristics if operated under different conditions.

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

Dynamic Characteristics

Characteristic Symbol Min Typ Max Unit

Rate of Change of Commutating Current See Figure 10.

(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, TJ = 125°C,

f = 250 Hz, No Snubber) CL = 10 µF LL = 40 mH

dV/dt 6.5 − − A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, RGK = 510 Ω, TJ = 125°C) dV/dt 500 − − V/µs

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz di/dt − − 10 A/µs

Characteristic Symbol Min Typ Max Unit

Peak On−State Voltage (Note 2) (ITM = ±11 A) VTM −1. 2 1. 6 V

Gate Trigger Current

(Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

IGT

5.0 13 35

mAMT2(+), G(−) 5.0 13 35

MT2(−), G(−) 5.0 13 35

Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA)) IH– 20 40 mA

Latching Current

(VD = 24 V, IG = 50 mA)

MT2(+), G(+)

_ 20 50

mAMT2(+), G(−) _ 30 80

MT2(−), G(−) _ 20 50

Gate Trigger Voltage

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

VGT

0.5 0.78 1. 5

VMT2(+), G(−) 0.5 0.70 1. 5

MT2(−), G(−) 0.5 0.71 1. 5

Speciﬁcations are subject to change without notice.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12D, MAC12M, MAC12N

Voltage Current Characteristic of SCR

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

VTM Maximum On State Voltage

IHHolding Current

VI tnardauQIII tnardauQ

I tnardauQII tnardauQ

Quadrant Deﬁnitions for a Triac

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

+C urrent

+V oltage

VTM

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3 VTM

Speciﬁcations are subject to change without notice.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12D, MAC12M, MAC12N

Figure 4. Typical Latching Current vs Junction TemperatureFigure 3. Typical Holding Current vs Junction Temperature

Figure 6. On-State Power DissipationFigure 5. Typical RMS Current Derating

Figure 1. Typical Gate Trigger Current vs Junction Temperature Figure 2. Typical Gate Trigger Voltage vs Junction Temperature

Speciﬁcations are subject to change without notice.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12D, MAC12M, MAC12N

Figure 7. Typical On-State Characteristics Figure 8. Typical Thermal Response

t, TIME (ms)

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.1

0.01 1000010001001010.1

Speciﬁcations are subject to change without notice.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12D, MAC12M, MAC12N

Dimensions Part Marking System

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND

LEAD IRREGULARITIES ARE ALLOWED.

Dim

Inches Millimeters

Min Max Min Max

A 0.570 0.620 14.48 15.75

B 0.380 0.405 9.66 10.28

C 0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

G 0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K 0.500 0.562 12.70 14.27

L 0.045 0.060 1. 1 5 1.52

N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79

S 0.045 0.055 1. 1 5 1.39

T 0.235 0.255 5.97 6.47

U 0.000 0.050 0.00 1.27

V 0.045 −−− 1. 1 5 −−−

Z −−− 0.080 −−− 2.04

12 3

SEATING

PLANE

Pin Assignment

1Main Terminal 1

2Main Terminal 2

3 Gate

4Main Terminal 2

Ordering Information

Device Package Shipping

MAC12DG

TO-220

(Pb-Free) 50 Units / RailMAC12MG

MAC12NG

CASE 221A

STYLE 4

MAC12xG

AYWW

x= D, M, or N

A= Assembly Location

Y= Year

WW = Work Week

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and

test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete

Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics