Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features * Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz * High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz * High Gain-Bandwidth Product: 7.0 GHz Typical fT * Low Cost Surface Mount Plastic Package * Tape-and-Reel Packaging Option Available[1] SOT-143 Plastic Pin Connections INPUT Description Agilent's AT-41411 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT41411 is housed in a low cost low parasitic 4 lead SOT-143 surface mount package. The SOT-143 is an industry standard and is compatible with high volume surface mount assembly techniques. The 4 micron emitter-to-emitter pitch Note: 1. Refer to "Tape-and-Reel Packaging for Semiconductor Devices". The AT-41411 bipolar transistor is fabricated using Agilent's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. VCC GND 414 enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 in the 1 to 2 GHz frequency range, makes this device easy to use as a low noise amplifier. OUTPUT 2 AT-41411 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum[1] 1.5 20 12 50 225 150 -65 to 150 Units V V V mA mW C C Thermal Resistance [2,4]: jc = 550C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 1.8 mW/C for TC > 26C. 4. See MEASUREMENTS section "Thermal Resistance" for more information. Part Number Ordering Information Part Number Increment Comments AT-41411-TR1 3000 Reel AT-41411-BLK 100 Bulk Note: For more information, see "Tape and Reel Packaging for Semiconductor Devices". Electrical Specifications, TA = 25C Symbol |S 21E |2 Parameters and Test Conditions[1] Units Min. Typ. 14.5 16.5 11.0 Insertion Power Gain; VCE = 8 V, IC = 20 mA f = 1.0 GHz f = 2.0 GHz dB f = 2.0 GHz dBm 17.0 G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 20 mA 1 dB Compressed Gain; VCE = 8 V, IC = 20 mA f = 2.0 GHz dB 13.0 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz 1.4 1.8 3.5 18.0 13.0 9.0 fT Gain Bandwidth Product: VCE = 8 V, IC = 20 mA hFE ICBO IEBO Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V P1 dB Notes: 1. Refer to PACKAGING Section, "Tape-and-Reel Packaging for Semiconductor Devices." dB GHz -- A A Max. 7.0 30 150 270 0.2 1.0 3 AT-41411 Typical Performance, TA = 25C 16 21 14 GA 18 GAIN (dB) 16 12 9 10 4 4 NFO 3 0 0.5 2 1.0 2.0 3.0 4.0 0 40 35 MSG 25 20 MAG |S21E|2 10 5 0 0.1 0.3 0.5 1.0 10 20 30 0 IC (mA) Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. 15 2 0 FREQUENCY (GHz) 30 NFO NFO (dB) 6 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 20 mA. Figure 2. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V, f = 2.0 GHz. NFO (dB) GAIN (dB) GA 12 15 GAIN (dB) 20 |S21E|2 GAIN (dB) 24 1.0 GHz 12 2.0 GHz 8 4 0 4.0 GHz 0 10 20 30 IC (mA) Figure 3. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 4 AT-41411 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .85 -30 27.3 23.20 158 0.5 .58 -112 21.7 12.18 109 1.0 .49 -156 16.5 6.70 85 1.5 .49 178 13.2 4.58 71 2.0 .50 160 10.8 3.45 59 2.5 .53 153 9.0 2.82 53 3.0 .55 142 7.5 2.37 43 3.5 .56 133 6.1 2.02 33 4.0 .56 121 4.9 1.76 23 dB -37.7 -29.1 -27.2 -25.0 -23.4 -22.5 -21.0 -19.8 -18.8 S12 Mag. .013 .035 .044 .056 .068 .075 .089 .102 .115 Ang. 64 44 43 47 47 56 54 52 49 Mag. .93 .62 .50 .46 .45 .43 .43 .44 .46 S22 dB -40.0 -32.0 -28.4 -26.4 -24.2 -22.9 -20.7 -19.6 -18.3 S12 Mag. .010 .025 .038 .048 .062 .071 .092 .105 .122 Ang. 59 56 58 61 61 60 61 57 53 Mag. .89 .57 .52 .51 .50 .47 .46 .45 .45 Ang. -11 -30 -33 -36 -41 -43 -53 -63 -73 AT-41411 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 20 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .65 -46 30.4 33.07 150 0.5 .46 -137 22.4 13.21 100 1.0 .43 -175 16.7 6.85 80 1.5 .44 163 13.3 4.63 67 2.0 .47 148 10.8 3.47 56 2.5 .50 140 9.0 2.82 50 3.0 .53 132 7.5 2.36 40 3.5 .55 122 6.1 2.02 30 4.0 .56 112 4.8 1.74 19 A model for this device is available in the DEVICE MODELS section. AT-41411 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.3 1.3 1.4 1.8 3.5 opt Mag .12 .10 .07 .09 .31 Ang 4 23 57 -158 -87 RN/50 0.17 0.17 0.16 0.16 0.38 S22 Ang. -15 -26 -29 -32 -37 -39 -48 -60 -73 5 SOT-143 Plastic Dimensions 0.92 (0.036) 0.78 (0.031) PACKAGE MARKING CODE E C 1.40 (0.055) 1.20 (0.047) XXX B 2.65 (0.104) 2.10 (0.083) E 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) 0.54 (0.021) 0.37 (0.015) TOP VIEW 0.15 (0.006) 0.09 (0.003) 3.06 (0.120) 2.80 (0.110) 1.02 (0.041) 0.85 (0.033) 0.10 (0.004) 0.013 (0.0005) 0.69 (0.027) 0.45 (0.018) SIDE VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) END VIEW www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies 5965-8924E (11/99)