VUO120-12NO2T 3~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 180 A I FSM = 1100 A 3~ Rectifier Bridge + NTC Part number VUO120-12NO2T Backside: isolated W5 M1/O1 W6 NTC ~A6 ~E6 ~K6 M10/O10 Features / Advantages: Applications: Package: V2-Pack Package with DCB ceramic Reduced weight Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current NTC Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130604b VUO120-12NO2T Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 V IR reverse current VR = 1200 V TVJ = 25C 100 A VR = 1200 V TVJ = 125C 2 mA TVJ = 25C 1.16 V 1.55 V 1.09 V VF IF = forward voltage drop min. 60 A typ. I F = 180 A IF = TVJ = 125 C 60 A I F = 180 A TC = 90C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V 180 A TVJ = 150 C 0.81 V d= for power loss calculation only Ptot 1.59 T VJ = 150 C 4.4 m 0.6 K/W 0.2 K/W TC = 25C 205 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.19 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.01 kA t = 10 ms; (50 Hz), sine TVJ = 45C 6.05 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 5.89 kAs TVJ = 150 C 4.37 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 4.25 kAs 37 pF 20130604b VUO120-12NO2T Package Ratings V2-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 C -40 150 C 2.5 Nm Weight MD 76 2 mounting torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute XXXXXXXXXXXXX Logo UL terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage Part name Ordering Standard g 50/60 Hz, RMS; IISOL 1 mA yywwx Date code Prod. line Part Number VUO120-12NO2T Marking on Product VUO120-12NO2T Similar Part VUO120-16NO2T Package V2-Pack Delivery Mode Box Quantity 6 Code No. 510989 Voltage class 1600 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25 B 25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 k K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 * on die level T VJ = 150 C Rectifier 102 0 V 0 max threshold voltage 0.81 V R 0 max slope resistance * 3.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 25 50 75 100 TC [C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20130604b VUO120-12NO2T Outlines V2-Pack Detail X Detail Y M 2:1 M 5:1 O1.5 (DIN 46 431) O 6.1 0.50.2 1.5 +0.6-0.3 6.0 (4) 1.5 O 2.5 Y 1 2 3 8 9 10 5.5 8 9 10 23.8 320.2 4 5 6 7 R 5.5 R1 20.3 4 5 6 7 A B C D E F G H I K L M N O P R S T U V W R 15.4 0.3 1 2 3 A B C D E F G H I K L M N O P R S T U V W 78.50.3 28.80.3 28.80.3 16.40.3 7.4 0.3 4 0.3 3.4 0.3 4x45 15.4 0.3 38 40.4 2 0.3 0.25 65 93 2 13 170.25 X 4.50.5 O 2.1 400.15 0.5 800.3 Aufdruck der Typenbezeichnung M1/O1 W5 W6 NTC ~A6 ~E6 ~K6 M10/O10 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130604b VUO120-12NO2T Rectifier 200 900 160 800 120 IFSM 700 104 50Hz, 80% VRRM TVJ = 45C TVJ= 45C IF 2 [A s] [A] 600 80 50 Hz 0.8 x V RRM TVJ= 150C [A] TVJ = 150C T VJ = 150C 40 500 TVJ = 125C TVJ = 25C 0 0.5 1.0 400 0.001 1.5 103 0.01 0.1 2 1 1 3 2 Fig. 3 I t vs. time per diode Fig. 2 Surge overload current vs. time per diode Fig. 1 Forward current vs. voltage drop per diode 4 5 6 7 89 t [ms] t [s] VF [V] 100 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 Ptot 60 [W] 160 DC = 1 0.5 0.4 0.33 0.17 0.08 120 IFAVM 80 40 [A] 40 20 0 0 0 20 40 60 80 0 25 50 75 100 125 150 175 0 25 Tamb [C] IF(AV)M [A] 50 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.6 ZthJC 0.4 [K/W] Ri 0.060 ti 0.020 0.2 0.003 0.010 0.150 0.225 0.243 0.800 0.144 0.580 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130604b