VS-VSK.170PbF, VS-VSK.250PbF Series
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SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A, 250 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This VSK series of MAGN-A-PAK modules uses high voltage
power thyristor/thyristor and thyristor/diode in seven basic
configurations. The semiconductors are electrically isolated
from the metal base, allowing common heatsinks and
compact assemblies to be built. They can be interconnected
to form single phase or three phase bridges or as
AC-switches when modules are connected in anti-parallel
mode. These modules are intended for general purpose
applications such as battery chargers, welders, motor
drives, UPS, etc.
PRIMARY CHARACTERISTICS
IT(AV) 170 A, 250 A
Type Modules - thyristor, standard
Package MAGN-A-PAK
MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.170.. VSK.250.. UNITS
IT(AV) 85 °C 170 250
A
IT(RMS) 377 555
ITSM
50 Hz 5100 8500
60 Hz 5350 8900
I2t50 Hz 131 361 kA2s
60 Hz 119 330
I2t 1310 3610 kA2s
VDRM/VRRM 400 to 1600 400 to 2000 V
TJRange -40 to +130 °C
VS-VSK.170PbF, VS-VSK.250PbF Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
VS-VSK.170-
04 400 500
50
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
VS-VSK.250-
04 400 500
50
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900 60
20 2000 2100
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum average on-state current
at case temperature
IT(AV) 180° conduction, half sine wave 170 250 A
85 85 °C
Maximum RMS on-state current IT(RMS) As AC switch 377 555
A
Maximum peak, one-cycle on-state
non-repetitive, surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
5100 8500
t = 8.3 ms 5350 8900
t = 10 ms 100 % VRRM
reapplied
4300 7150
t = 8.3 ms 4500 7500
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
131 361
kA2s
t = 8.3 ms 119 330
t = 10 ms 100 % VRRM
reapplied
92.5 255
t = 8.3 ms 84.4 233
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 kA2s
Low level value or threshold voltage VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum 0.89 0.97 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.12 1.00
Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum 1.34 0.60 m
High level value on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.96 0.57
Maximum on-state voltage drop VTM
ITM = x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS))21.60 1.44 V
Maximum holding current IHAnode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 500
mA
Maximum latching current IL
Anode supply = 12 V, resistive load = 1 ,
gate pulse: 10 V, 100 μs, TJ = 25 °C 1000 1000
VS-VSK.170PbF, VS-VSK.250PbF Series
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SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Typical delay time tdTJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
Vd = 0.67 % VDRM
1.0
μs
Typical rise time tr2.0
Typical turn-off time tq
ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ
maximum;
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100
50 to 150
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum 50 60 mA
RMS insulation voltage VINS
50 Hz, circuit to base, all terminals shorted,
25 °C, 1 s 3000 V
Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 %
rated VDRM
1000 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum peak gate power PGM tp 5 ms, TJ = TJ maximum 10.0 W
Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0
Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 A
Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0
V
Maximum required DC gate voltage to trigger VGT
TJ = -40 °C
Anode supply = 12 V,
resistive load; Ra = 1
4.0
TJ = 25 °C 3.0
TJ = TJ maximum 2.0
Maximum required DC gate current to trigger IGT
TJ = -40 °C
Anode supply = 12 V,
resistive load; Ra = 1
350
mATJ = 25 °C 200
TJ = TJ maximum 100
Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V
Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA
Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A,
rated VDRM applied 500 A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Junction operating and storage
temperature range TJ, TStg -40 to +130 °C
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.17 0.125
K/W
Typical thermal resistance,
case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.02 0.02
Mounting
torque
± 10 %
MAGN-A-PAK to heatsink A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
4 to 6 Nm
busbar to MAGN-A-PAK
Approximate weight 500 g
17.8 oz.
Case style MAGN-A-PAK
VS-VSK.170PbF, VS-VSK.250PbF Series
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Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
R CONDUCTION PER JUNCTION
DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W
VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
60
70
80
90
100
110
120
130
0 40 80 120 160 200
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
VSK.170.. series
RthJC (DC) = 0.17 K/W
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.170.. series
R
thJC
(DC) = 0.17 K/W
0
50
100
150
200
250
300
040801201602
00
RMS limit
Conduction angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
VSK.170.. series
per junction
TJ = 125° C
0
50
100
150
200
250
300
350
0 50 100 150 200 250 300
DC
180°
120°
90°
60°
30°
RMS limit
Conduction period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.170.. series
per junction
TJ = 125°C
VS-VSK.170PbF, VS-VSK.250PbF Series
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
2000
2500
3000
3500
4000
4500
5000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At any rated load condition and with
rated VRRM applied following surge.
Peak Half Sine Wave On-state Current (A)
VSK.170.. series
per junction
Initial TJ = 130 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum non-repetitive surge current
vs. pulse train duration. Control of
conduction may not be maintained
.
Initial TJ = 130 °C
No voltage reapplied
Rated VRRM reapplied
VSK.170.. series
per junction
020406080100120
0.35K/W
0.3K/W
0.25K/W
0.2K/W
0.08K/W
0.12K/W
0.16K
/W
Maximum Allowable Ambient Temperature (°C)
R=0.04K/W-DeltaR
thS
A
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350 400
180°
120°
90°
60°
30°
Maximum Total On-state Power Loss (W)
Total RMS Output Current (A)
Conduction angle
VSK.170.. series
per module
TJ = 130 °C
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.02K/W-DeltaR
0.04K/W
thS
A
0.06K/W
0.08K/W
0.1K
/W
0.12K/W
0.16K/W
0.2K/W
0.25K/W
0.35K/W
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(sine)
180°
(rect.)
2 x VSK.170.. series
single phase bridge
connected
TJ = 130 °C
VS-VSK.170PbF, VS-VSK.250PbF Series
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Fig. 9 - On-State Power Loss Characteristics
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
Fig. 13 - On-State Power Loss Characteristics
020406080100120
Maximum Allowable Ambient Temperature (°C)
0.25K/W
0.16K
/W
0.12K/W
0.1K/W
0.08K/W
0.05K/W
0.03K/W
R=0.01K/W-DeltaR
thS
A
0
200
400
600
800
1000
1200
1400
1600
0 100 200 300 400 500
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x VSK.170.. series
three phase bridge
connected
TJ = 130 °C
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction angle
VSK.250.. series
RthJC(DC) = 0.125 K/W
60
70
80
90
100
110
120
130
0 100 200 300 400 500
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction period
VSK.250.. Series
RthJC (DC) = 0.125 K/W
0
50
100
150
200
250
300
350
050100150200250
RMS limit
Conduction Angle
Maximum Average On-state Power Loss (W
)
Average On-state Current (A)
180°
120°
90°
60°
30°
VSK.250.. series
per junction
T = 130 °C
J
VS-VSK.170PbF, VS-VSK.250PbF Series
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Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 16 - On-State Power Loss Characteristics
Fig. 17 - On-State Power Loss Characteristics
3500
4000
4500
5000
5500
6000
6500
7000
7500
11010
0
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
VSK.250.. series
per junction
At any rated load condition and with
rated VRRM applied following surge.
Initial T = 130 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
3000
4000
5000
6000
7000
8000
9000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum non-repetitive surge Current
vs. pulse train duration. Control of
conduction may not be maintained.
VSK.250.. series
per junction
Initial TJ = 130 °C
No voltage reapplied
Rated VRRM reapplied
020406080100120
Maximum Allowable Ambient Temperature (°C)
0.3K
/W
0.25K/W
0.20K/W
0.16K/W
0.12K/W
0.08K
/W
0.05K/W
R=0.02K/W-DeltaR
thS
A
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600
180°
120°
90°
60°
30°
Maximum Total On-state Power Loss (W)
Conduction angle
Total RMS Output Current (A)
VSK.250.. series
per module
TJ = 130 °C
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.01K/W-DeltaR
thS
A
0.02 K/W
0.03K/W
0.04K/W
0.05K
/W
0.06K
/W
0.1K/W
0.12K/W
0.16K/W
0.3 K/W
0
200
400
600
800
1000
1200
1400
0
100 200 300 400 500
Maximum Total Power Loss (W)
Total Output Current (A)
180°
(sine)
180°
(rect.)
2 x VSK.250.. series
single phase bridge
connected
T
J
= 130 °C
VS-VSK.170PbF, VS-VSK.250PbF Series
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Fig. 18 - On-State Power Loss Characteristics
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 21 - Reverse Recovery Charge Characteristics
Fig. 22 - Reverse Recovery Charge Characteristics
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.01K/W-DeltaR
0.03K/W
0.04K/W
0.05K/W
0.06K
/W
0.08K/W
0.1K/W
0.12K
/W
0.16K/W
0.20K/W
0.25K
/W
thS
A
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
100 200 300 400 500 600 700
Maximum Total Power Loss (W)
Total Output Current (A)
120°
(Rect)
3 x VSK.250.. series
three phase bridge
connected
TJ = 130 °C
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
100
1000
10 000
Instantaneous Forward Current (V)
Instantaneous Forward Voltage (V)
T
J
= 130 °C
VSK.170 series
per junction
T
J
= 25 °C
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
100
1000
10 000
Instantaneous Forward Current (V)
Instantaneous Forward Voltage (V)
TJ = 130 °C
VSK.250 series
per junction
TJ = 25 °C
200
400
600
800
1000
1200
1400
1600
1800
0 102030405060708090100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Typical Reverse Recovery Charge - Qrr (µC)
I
TM
= 800 A
500 A
300 A
200 A
100 A
VSK.170.. series
TJ = 130 °C
per junction
50 A
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0 1020304050607080901
00
Typical Reverse Recovery Charge - Q
rr
(µC)
Rate Of Fall Of On-state Current - di/dt (A/µs)
500 A
300 A
200 A
100 A
T = 130 °C
Per Junction
JI
TM
= 800 A
50 A
VSK.250.. series
T
J
= 130 °C
per junction
VS-VSK.170PbF, VS-VSK.250PbF Series
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Fig. 23 - Gate Characteristics
Fig. 24 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
(2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
rated di/dt : 20 V, 10 Ω; tr < = 1 µs
tr
≤
1 µs
Rectangular gate pulse
≤
30 % rated di/dt : 10 V, 20 Ω
(1) PGM = 10 W, tp = 4 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 40 W, tp = 1 ms
(4) PGM = 60 W, tp = 0.66 ms
VSK.170/250 series Frequency limited by PG(AV)
(1) (4)
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 1
00
Square Wave Pulse Duration (s)
VSK.170.. series
Steady state value:
RthJC = 0.17 K/W
R = 0.125 K/W
(DC Operation)
thJC
Transient Thermal Impedance ZthJC (K/W)
VSK.250.. series
Device code
KTVS-VS 250 - 20 PbF
1 432 5
- Circuit configuration (see dimensions - link at the end of datasheet)
2
- Current rating
3
- Voltage code x 100 = VRRM (see Voltage Ratings table)
4
- • None = standard production
• PbF = lead (Pb)-free
5
- Vishay Semiconductors product
1
VS-VSK.170PbF, VS-VSK.250PbF Series
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Two SCRs doubler circuit KT
Available up to 2000 V, contact factory for different requirement
SCR/diode doubler circuit, positive control KH
Available up to 2000 V, contact factory for different requirement
SCR/diode doubler circuit, negative control KL
Available up to 2000 V, contact factory for different requirement
Two SCRs common cathodes KU
Available up to 1200 V, contact factory for different requirement
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95086
VSKT...
+
-
~~
+
-
K1G1 G2K2
VSKH...
+
-
~~
+
-
K1G1
VSKL...
+
-
~~
+
-
VSKU...
-
-
++
-
-
K1G1 G2 K
2
Document Number: 95086 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 03-Aug-07 1
MAGN-A-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Ø 5.5
6
(0.24)
38 (1.5)
50 (1.97)
6 (0.24)
115 (4.53)
80 (3.15)
9 (0.35)
20 (0.79)
3 screws M8 x 1.25 35 (1.38) 28 (1.12)
32
(1.26)
HEX 13
10 (0.39)
92 (3.62)
51 (2.01)
52 (2.04)
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
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Vishay:
VSKH170-16 VSKH170-04 VSKL170-16 VSKL170-16D25 VSKH170-12 VSKL170-14D20 VSKT250-12PBF
VSKT170-14 VSKT170-08 VSKH170-16D25 VSKT170-16 VSKV250-04 VSKT170-12 VSKV250-08 VSKV250-12
VSKT170-04 VSKH170-14D20 VS-VSKH250-04PBF VS-VSKH170-16PBF VS-VSKH250-08PBF VS-VSKH250-
14PBF VS-VSKV250-08PBF VS-VSKV250-12PBF VS-VSKH250-16PBF VS-VSKL250-12PBF VSKH170-12PBF
VSKL250-12PBF VSKL250-16PBF VSKT170-12PBF VSKT170-14PBF VSKT170-16PBF VSKT250-04PBF
VSKT250-08PBF VSKT250-14PBF VSKT250-16PBF VSKU250-12 VSKU250-12PBF VSKV250-12PBF VS-
VSKL250-08PBF VS-VSKT250-04PBF VS-VSKT170-04PBF VS-VSKT250-12PBF VS-VSKT250-08PBF VS-
VSKT250-16PBF VS-VSKL250-16PBF VS-VSKT170-16PBF VS-VSKL250-14PBF VS-VSKT250-14PBF VS-
VSKV250-04PBF VS-VSKT170-14PBF VS-VSKL170-16PBF VS-VSKT170-12PBF VS-VSKH250-12PBF VS-
VSKT170-08PBF VS-VSKU250-12PBF VS-VSKH170-12PBF VS-VSKT250-18PBF VS-VSKL250-18PBF VS-
VSKL250-20PBF VS-VSKH250-20PBF VS-VSKT250-20PBF VS-VSKH250-18PBF