MCR470C SERIES (SILICON) MCR470D series MCR470E SERIES Advance Information BEAM-FIRED BEAM-FIRED INTEGRATED GATE INTEGRATED GATE FAST SWITCH THYRISTORS THY RISTORS ... designed for high-current, high-frequency applications in inverters, 470 AMPERES RMS choppers, cycloconverters, induction heating and high-frequency light- ing. Optimum cathode shunt placement permits high di/dt without sacrificing dv/dt capability. @ Low Switching Losses @ 3.0 us with 30 us Pulse, Ip = 150A MCR470C Series 3.0 Voits MCR470D Series 6.0 Volts MCR740E Series 6.0 Voits @ Critical Rate-of-Rise of On-State Current di/dt = 1000 Amp/us (Max)* @ Critical Exponential Rate dv/dt = 200 V/ps (Min) @ Integrated Gate Permits Soft-Fire Gate Control @ Fast Turn-Off Time 20 to 40 ps *With 0.05 uF and 20 ohm snubber circuit. MAXIMUM RATINGS Repetitive Peak Off-State Non-Repetitive Peak Voltage (Ty = +125C) Reverse Blocking Voltage Vor: VRAM Vasm Device Type Volts Volts a ts + re - i at Turn-Off Time = 20 us Max nt Y - 2 STYLE 1: McR470C ~10 300 200 t [Fy jac PIN.1. ANODE -20 200 300 Tt 7 2. GATE -30 300 400 E t L< 3. CATHODE -40 400 500 4. CATHODE -50 500 600 TERMINAL 2 -60 600 700 -70 7100 800 cru? ~80 800 900 Turn-Off Time = 30 us Max Vv T MCR470D~s-10 100 200 TERMINAL 3 ~20 200 300 -30 300 400 NOTE: N -40 400 500 1. DIM "K" APPLIES TO BOTH LEADS -60 $00 600 -60 600 700 DIM] MIN | MAX | MIN | MAX ~-70 700 800 -80 800 900 -90 900 1000 ~100 1000 1100 Tuen-Off Time = 40 us Max MCR470E =-10 400 200 -20 200 300 ~80 300 400 -40 400 500 -50 00 600 -60 600 700 ~70 700 800 -80 800 900 -90 900 1000 ~100 1000 1100 -110 1100 1200 -120 1200 1300 CASE 220-03 This is advance information on a new introduction and specifications are subject to change without notice. 145 MCR470C series, MCR470D series, MCR470E series (continued) MAXIMUM RATINGS Rating Symbol Value Unit Average Forward Current, To = 60C ITIAV) 300 Amp (180Conduction Angle} Peak Surge Current 'Tsm 4500 Amp (One cycle, 60 Hz, Ty = -40 to +125C) Circuit Fusing Considerations 12t 84,000 Aes (Ty = -40 to +125C, t = 1.5 - 8.3 ms) Peak Forward Gate Power Porm 15 Watts Average Forward Gate Power PGFIAV) 3.0 Watts Peak Forward Gate Current 'GFM 4.0 Amp Peak Reverse Gate Voltage VGRM 5.0 Volts Operating Junction Temperature Range Ty ~40 to +125 Storage Temperature Range Tstg ~40 to +150 c Mounting Force ~ 1000 + 200 tos Critical Rate-of-Rise of On-State Current Repetitive di/dt 200 Amp/us Non- Repetitive, 1000 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Resc 0.08 ciw ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Cheracter istic Symbol Min Typ Max Unit Peak Forward Blocking Current IDRM - = 15 mA (Rated Voam, with gate open, Ty = 125C) Peak Reverse Blocking Current IRRM - - 15 mA (Rated Varm, with gate open, Ty = 125C) Forward On Voltage V - - 2.30 Volts {17M = 1000 A Peak, Outy Cycles 0.01%, Ty = 25C) Gate Trigger Current I6Tt - _ 150 mA (Anode Voltage = 6.0 V, Ry = 3.0 Ohms} Gate Trigger Voltage VGT - - 3.0 Voits (Anode Voitage * 6.0 V, Ry = 3.0 Ohms) Holding Current hy - 50 500 mA (Anode Voltage = 24 V, gate open, Initiating Current = 2.0 A) Non-Triggering Gate Voitage VGsSM 0.15 - ~ Volts (Anode Voitage = Rated Vorm, RL = 1000 Ohms, Ty = 125C) Circuit Commutated Turn-Off Time tq us (VR = 50 V (Min); Rated Vorm, Ty = +125C, MCR470C - - 20 dip/dt = 20 A/us; Repetition Rate = 1.0 pps; MCR470D - -_ 30 fem * 250 A; dv/dt = 20 V/us) MCR470E - - 40 Transient Turn-On Voltage MCR470C VTo - - 5.0 Volts (Vorm 100 V, Iti = 300 A, PW = 8.0 us MCR4700 - _ 8.0 Gate Drive = 600 mA, rise = 0.1 ys, test point = 4.0 us) MCR470E - - 8.0 Critical Exponential Rate of Rise dv/dt 200 - - Vius (Rated Vpre, gate open, Ty = 125C) 146