a a eee E. a es en. =e CY7C164A CY7C166A CYPRESS EEE Oe ea =<_ - SEMICONDUCTOR Features Functional Description Automatic power-down when The CY7C164A and CY7C166A are high- deselected performance CMOS static RAMs orga- Output Enable (GE) feature nized as 16,384 by 4 bits. Easy memory ex- (7C166A) pansion is provided by an active LOW chip CMOS for optimum speed/power enable (CE) and three-state drivers. The CY7C166A has an active low output enable High speed (OE) feature. Both devices have an auto- taa = 12 ns matic power-down feature, reducing the Low active power power consumption by 60% when dese- 935 mw lected. Low standby power Writing to the device is accomplished when _20 mw the chip enable ) and write enable (WE) inputs are both LOW (and the output enable (OE) is LOW for the 7C166A). Data on the four input/output pins (1/O9 TTL-compatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge 16,384 x 4 Static R/W RAM through I/O3) is written into the memory location specified on the address pins (Ag through Aj3). Reading the device is accomplished by tak- ing chip enable (CE) LOW (and OE LOW for 7C166A), while write enable (WE) re- mains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data 1/0 pins. The I/O pins stay in high-impedance state when chip enable (CE) is HIGH, or write enable (OE) is HIGH for 7C166A). A die coat is used to insure alpha immunity. Logic Block Diagram DIP Top View INPUT BUFFER ho 2 = VO2 a 256 x 64x 4 < T ice As ARRAY w op mew AG g vos 3 A ig L292 a a VOp COLUMN - OOINANae WE Pin Configurations DIP Top View Ct64a-2 VOs qf@ erie ce VO> <<< (C1684 ONLY) 131atst617 J Cr64a-1 is z IEP cresa-s Selection Guidel!] 7TC164A12 | FCIG4IA=15.:| 7C164A20 | 7C164A25 | 7C164A-35 | 7C164A~45 7C166A4=12 || ICLOGA-15, | 7C164A20 | 7C166A-25 | 7C166A-35 | 7C166A~45 Maximum Access Time (ns) 12 AS 20 25 35 45 Maximum Operating + Current (m ay Military +70 160 100 100 100 100 Maximum Standby a: : Current (mA) Military 40/20 35/20, 40/20 40/20 30/20 30/20 Shaded area contains advanced information. Note: 1, For commercial specifications, see the CY7C164/CY7C166 datasheet. 2-223ig rss BP SEMICONDUCTOR CY7C164A CY7C166A Maximum Ratings (Above which the useful life may be impaired. Foruser guidelines, not tested.) Output Current into Outputs (Low) ...........00.00. 20mA Static Discharge Voltage .... 2.000.000. 2eeeeee >2001V Storage Temperature .........0....065 65C to +150C (per MIL-STD-883, Method 3015) Ambient Temperaturewith Latch-upCurrent..... 0.0.0. o ccc eee >200 mA Power Applied 0.0.0.0... 00.0000 c eee 55C to +125C Operating Range Supply Voltage to Ground Potential......... - 0.5V to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Vee in High Z State ...... 0.0 cece eee ee - 0.5V to +7.0V Mila Heal a5C 15C Sy E 10% ilita C to +125 SV + DC Input Voltage oo... cece ceeeeveeee es ~ 3.0V to +7.0V ~ hte Electrical Characteristics Over the Operating Rangel*l TC164A12 | 7CIG4A15 | 7C164A20 7C166A~12 | 7C166A15 | 7C166A20 Parameters Description Test Conditions Min. | Max. | Min. | Max. | Min. | Max. | Units Vou Output HIGH Voltage Veco = Min., lon = 4.0mA 2.4 2.4 2.4 v Vo. Output LOW Voltage Vcc = Min., lot = 8.0 mA 0.4 0.4 0.4 v Vin Input HIGH Voltage 2.2 | Veco | 2.2 | Veco | 2.2 | Veo v Vu. Input LOW Vottagel4! -3.0) 08 |-3.0] 08 |-3.0] 08 v Ibx Input Load Current GND < Vi < Voc -10 | +10 | -10 | +10 | -10 | +10 ] pA loz. Output Leakage GND < Vo < Voc. -10 | +10 | ~10 | +10 | -10 | +10 |] pA Current Output Disabled los Output Short Veco = Max., Vour = GND 350 350 -350] mA CircuitCurrent!5I lec Vcc Operating Supply Vcc = Max., Military (70 160 100 | mA Current lout =9mA Ispi Automatic CE 16] Max. Vcc, CE > Vii Military 40 35 40 | mA Power Down Current Min. Duty Cycle = 100% Is132 Automatic CEI Max. Vcc, Military 20 20 20 | mA Power Down Current CE > Vipy 0.3V Vin 2 Vec 0.3V or Vin <0.3V Shaded area contains advanced information. Notes: 2. Tris the instant on case temperature. 5. Not more than | output should be shorted at one time. Duration of 3, See the fast page of this specification for Group A subgroup testing the short circuit should not exceed 30 seconds. information, A pull-up resistor to Vo on the CE input is required to keep the de- 4. Vit min. = 3.0V for pulse durations less than 30 ns. vice deselected during Voc power-up, otherwise Isq willexcced values 2-224 given,ae EMICONDUCTOR CY7C164A CY7C166A Electrical Characteristics Over the Operating Rangel3l(continued) 7C164A25 7C164A35, 45 7C166A25 71C166A35, 45 Parameters Description Test Conditions Min. | Max. | Min. Max. | Units Von Output HIGH Voltage Vcc = Min. low = 4.0mA 2.4 2.4 Vv VoL Output LOW Voltage Vec = Min., Io, = 8.0 mA 0.4 0.4 Vv Vin Input HIGH Voltage 2.2 Vee 2.2 Vec Vv Vit Input LOW Voltagel4l -3.0 | 08 -3.0 0.8 Vv hx Input Load Current GND < V| < Voc -10 +10 10 +10 pA loz Output LeakageCurrent | GND < Vo < Vcc, Output Disabled -10 +10 -10 +10 pA los Output Short Voc = Max., Vout = GND 350 350 mA Circuit Current!5I lec Vcc Operating Supply Voc = Max. lour = 0mMA Military 100 100 mA Current Ispi Automatic CEI4] Max. Vcc, CE > Vint Military 40 30 mA Power Down Current Min. Duty Cycle = 100% Isp2 AutomaticCE!4] Max. Vcc, Military 20 20 mA Power Down Current CE > Vin7 0.3V Vin > Veco 0.3V or Vin < 0.3V Capacitance!!! Parameters Description Test Conditions Max. Units Cin InputCapacitance Ta = 25C, f = 1 MHz, 10 pF Cour Output Capacitance Veo = 9.0 10 pF Note: 7. Tested initially and after any design or process changes that may affect these parameters. AC Test Loads and Waveforms Al 48122 SV or mT I 30 pF Al 4812 SN wr ALL INPUT PULSES ome TI 3.0V _ R2 5 pF R2 I 2550 I INCLUDING iL INCLUDING JIGAND = = JIGAND = SCOPE (a) SCOPE (b) Equivalent to: THEVENIN EQUIVALENT 1672 OUTPUT o~,o 1.73V GND j 2558 <sns =| be CIB4A-6 CIB4A~7 2-225yc PRESS => EMICONDUCTOR CY7C164A CY7C166A Switching Characteristics Over the Operating Rangel? $1 7C164A-12 | 7C164A-15 | 7C164A20 | 7C164A25 | 7C164A~35 | 7C164A45 7C166A12 | 7C166A15 | 7C166A20 | 7C166A25 | 7C166A35 | 7C166A45 Parameters Description Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Units READ CYCLE tre Read Cycle Time 12 15 20 25 35 45 nis taa Address to Data Valid 12 15 20 25 35 45 ns toHA Output Hold from 3 3 3 3 3 3 ns AddressChange {ACE CE LOW to Data Valid 12 15 20 25 35 45 ns (DOE OE LOW to Data Valid 7 10 12 15 20 ns (7C166A) tLZ0F OE LOW to Low Z 0 0 3 3 3 3 ns (7C166A) UIZOE GE HIGH to High Z 7 8 8 10 12 18 ns (7C166A) {LZCE CE LOW to Low ZI) 3 3 5 5 5 5 ns tHZCE CE HIGH to 7 8 8 10 15 15 ns High ZI 10} teu CE LOW to Power-Up 0 0 0 0 0 0 ns tpp CE HIGH to 12 15 20 20 20 25 nis Power-Down WRITECYCLE!! twe Write Cycle Time 12 15 20 20 25 40 ns IsCE CE LOW to Write End 8 10 15 20 25 30 ns law Address Set-Up to 9 10 15 20 25 30, ns Write End tHA Address Hold from 0 0 0 0 0 0 ns Write End tsa Address Set-Up to 0 0 0 0 0 0 ns Write Start tpwE WE Pulse Width 10 15 15 20 20 ns {sp Data Set-Up to 7 10 10 15 15 ns Write End tp Data Hold from 0 0 0 0 0 0 ns Write End tLZ2WE WEHIGH toLow Zl) | 3 3 5 5 5 5 ns tHZWE WELOW to High Z?. 0 6 7 7 7 10 15 | ns Shaded area contains advanced information. Notes: __ 8. Testconditions assume signal transition time of S ns or tess, timingref- 11. The internal write time of the memory is defined by the overlap of CE erence levels of 1.5V, input pulse levels of 0 to 3.0V, and output load- ing of the specified IQ) gy and 30-pF load capacitance. 9. At any given temperature and voltage condition, tyyzcE is less than tizcr for any given device. These parameters are guaranteed and not 100% tested. 10. tyzcn and tyzwe ate specified with C;, = 5 pF as in part (b) in AC Test Loads. Transition is measured +500 mV from steady state volt- age. 2-226 LOW and WE LOW. Both signals must he LOW 10 initiate a write and either signal can terminate a write by going HIGH. The data input set- up and hold timing should be referenced to the rising edge of the sig- nal that terminates the write.CY7C164A CY7C166A . x. by errs =. SEMICONDUCTOR Switching Waveforms Read Cycle No. 11!2. !3] x tac L SRAMs >| ADDRESS toa | tona DATA OUT PREVIOUS DATA VALID KxKx DATA VALID CIB4A~-8 Read Cycle No, 2(!2. !4] . tac CE ~ ye K J tace oe 70166 DP tHz0E 1 __} tLz0 ae h2ce HIGH HIGH IMPEDANCE TT, IMPEDANCE DATA OUT <a DATA VALID - tLzcE be toy he tep Voc ICC SUPPLY 50% 50% CURRENT ISB C164A-9 Write Cycle No. 1 (WE Controlled)! !!. !5] ADDRESS CE fewe WE tsp tuo DATA IN DATA-IN VALID tHzwe {LZ7We HIGH IMPEDANCE DATA I/O DATA UNDEFINED JX C164A-10 Notes: 12, WE is HIGH for read cycle. 13, Device is continuously selected, CE = Vi. (7C166A OF = V1, also). 14. Address valid prior to or coincident with CE transition LOW. 15. 7C166A only: Data I/O will be high impedance if OF = Vin. 2-227CY7C164A Pes CY7C166A SEMICONDUCTOR Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled)|''!. 15. 16] be two >! ADDRESS YK x tsa tsce CE \ ie N / taw tHa tewe We WLLL LLL we Xk LZ Z tsp f+ to DATA IN DATA-IN VALID HIGH IMPEDANCE DATA 1/O C1B4A-11 Note: 16. If CE goes HIGH simultancously with WE HIGH, the output remains in a high-impedance state. Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT NORMALIZED SUPPLY CURRENT OUTPUT SOURCE CURRENT ys. SUPPLY VOLTAGE ys, AMBIENT TEMPERATURE _. __s. OUTPUT VOLTAGE 1.4 1.2 < 120 o a _ B12 10 % 100 Q loc Q lec Wl SS 1.0 Y ia a a 08 5 80 Ww Og w o N N w a a 06 Qo 60 $06 = 5 6 0.4 3 40 > 04 > cc = a Vin = 5.0V 5 0.2 Isp 0.2 Isp a 20 0.0 0.0 3 0 40 45 5.0 5.6 6.0 -55 25 125 0.0 1.0 2.0 3.0 4.0 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) NORMALIZED ACCESS TIME NORMALIZED ACCESS TIME OUTPUT SINK CURRENT ys. SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE vs. OUTPUT VOLTAGE 1.6 = 140 L 120 14 2 2 2 e a x q H 12 3 3 oO $ z ZO 3 z Ta = 25C) = 10 Zz 60 9 5 Voc = 5.0V fe z > cc . > 40 08 5 20 0.8 0.6 0 40 45 5.0 5.5 6.0 -55 25 125 0.0 1.0 20 3.0 40 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE {V) 2-228CY7C164A CY7C166A Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE ys. SUPPLY VOLTAGE vs. OUTPUT LOADING NORMALIZED Icc vs. CYCLE TIME 3.0 30.0 1.25 T Voc = 5.0V Ta = 25C 2.5 25.0 A s 8 Vin = 0.5V 2 ms a 20 ~ 20.0 Q 1.00 N = N Zz 15 < 15.0 z BR => 10 10.0 Voc = 4.5V S 0.75 oT 0.5 5.0 Ta = 25C 0 0.0 0.50 00 10 2.0 30 40 5.0 0 200 400 600 800 1000 10 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) CY7C164A Truth Table CY7C166A Truth Table CE | WE | Inputs/Outputs Mode CE | WE | OF | Inputs/Outputs Mode H | X | HighZ Deselect/Power-Down H X | X | HighZ Deselect/Power-Down L H | Data Out Read L H L | Data Out Read L L | DataIn Write L L X | Dataln Write I H | H | HighZ Deselect Address Designators Address Address CY7C164A CY7C166A Name Function Pin Number | Pin Number AS X3 1 1 A6 X4 2 2 A7 X5 3 3 A8 X6 4 4 AY X7 5 5 Al0 Y5 6 6 All Y4 7 7 Al2 YO 8 8 Al3 Yi 9 9 AQ Y2 17 19 Al Y3 18 20 A2 X0 19 21 A3 Xl 20 22 A4 X2 21 23 2-229yy CYPRESS SEMICONDUCTOR CY7C164A CY7C166A Ordering Information Speed Package | Operating Speed Package | Operating (ns) Ordering Code Type Range (ns) Ordering Code Type Range 12 CY7C164A~12DMB D10 Military 12 CY7C166A15DMB D14 Military CY7C164A~12KMB K73 CY7C166A15KMB K73 CY7C164A12LMB L52 CY7C166A1SLMB L54 15 CY7C164A-15DMB D10 Military 15 CY7C166A15DMB D14 Military CY7C164A15KMB K73 CY7C166A-1SKMB K73 CY7C164A15LMB LS2 CY7C166A15LMB L54 20 CY7C164A20DMB D10 Military 20 CY7C166A20DMB bi4 Military CY7C164A20KMB K73 CY7C166A -20KMB K73 CY7C164A20LMB L52 CY7C166A 20LMB LS4 25 CY7C164A-25DMB D10 Military 25 CY7C 166A 25DMB D14 Military CY7C164A25KMB K73 CY7C166A25KMB K73 CY7C164A-25LMB L52 CY7C166A25LMB L54 35 CY7C164A-35DMB D110 Military 35 CY7C166A35DMB D4 Military CY7C164A35KMB K73 CY7C166A35KMB K73 CY7C164A35LMB L52 CY7C166A-35LMB LS4 45 CY7C164A45DMB D10 Military 45 CY7C166A45DMB D14 Mititary CY7C164A45KMB K73 CY7C 166A 45KMB K73 CY7C164A45LMB L52 CY7CI66A45LMB L54 Shaded area contains advanced information. MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Switching Characteristics Parameters Subgroups Parameters 1 Subgroups Vou 1,2,3 READ CYCLE VoL 1,2,3 tre 7, 8,9, 10, 11 Ving 1, 2,3 taa 7,8, 9, 10, 11 Vit. Max. 1,2,3 lonta 7,8,9, 10,11 lx 1,2.3 LACE 7, 8,9, 10, 1 loz 1,2,3 tpogl!7! 7, 8,9, 10, 11 los 1,2,3 WRITE CYCLE lec 1,2,3 two 7, 8,9, 10, 11 Ispy 1, 2,3 tsck 7, 8,9, 10, 11 Ispi 1,2,3 taw 7, 8,9, 10, 11 THA 7, 8,9, 10,11 Document #: 38Q0113-A Isa 7, 8,9, 10, 11 tpwe 7, 8,9, 10, 11 tsp 7, 8,9, 10, 11 tip 7, 8,9, 10,11 Note: 17. 7C166A only. 2-230