R07DS0178EJ0200 Rev.2.00 Page 1 of 7
Aug 25,2015
Preliminary Datasheet
BCR1AM-8P
400V-1A-Triac
Low Power Use
Features
IT (RMS) : 1 A
VDRM :400 V
IFGTI : 5 mA
IRGTI, IRGTIII : 5 mA or 3mA(IGT item:1)
IFGTIII : 10 mA
Non-Insulated Type
Planar Passivation Type
RoHS Compliant
Halogen-free package (PRSS0003DJ-A)
Completely Pb-free package (PRSS0003DJ-A)
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
2
1
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
1
2
3
RENESAS Package code: PRSS0003DJ-A
(Package name: TO-92)
1
2
3
Applications
Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric
fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications
Maximum Ratings
Parameter Symbol
Voltage class Unit
8
Repetitive peak off-state voltageNote1 V
DRM 400 V
Non-repetitive peak off-state voltageNote1 V
DSM 500 V
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 1.0 A
Commercial frequency, sine full wave
360° conduction, Tc = 56CNote3
Surge on-state current ITSM 10 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 0.41 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 1 W
Average gate power dissipation PG (AV) 0.1 W
Peak gate voltage VGM 6 V
Peak gate current IGM 0.5 A
Junction temperature Tj – 40 to +125 C
Storage temperature Tstg – 40 to +125 C
Mass — 0.23 g Typical value
Notes: 1. Gate open.
R07DS0178EJ0200
Rev.2.00
A
ug 25,2015
BCR1AM-8P Preliminary
R07DS0178EJ0200 Rev.2.00 Page 2 of 7
Aug 25,2015
Electrical Characteristics
Parameter Symbol
Rated value Unit Test conditions
Min. Typ. Max.
Repetitive peak off-state current IDRM — — 0.5 mA Tj = 125C, VDRM applied
On-state voltage VTM — — 1.6 V
Tc = 25C, ITM = 1.5 A,
Instantaneous measurement
Gate trigger voltageNote2 V
FGT — — 2.0 V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
V
RGT — — 2.0 V
V
RGT — — 2.0 V
V V
FGT — — 2.0 V
Gate trigger currentNote2 I
FGT — — 5 mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
I
RGT — — 5Note5 mA
I
RGT — — 5Note5 mA
V I
FGT — — 10 mA
Gate non-trigger voltage VGD 0.1 — — V Tj = 125C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 50 C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 2 — — V/s Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT 3 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
VD
(dv/dt)c
BCR1AM-8P Preliminary
R07DS0178EJ0200 Rev.2.00 Page 3 of 7
Aug 25,2015
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C) × 100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C) × 100 (%)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
4.42.40.80.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
0
2510
1
4
2
37 10
2
425
37
4
6
8
10
0
10–1
231005710
123 5710
223 5710
3
101
7
5
3
2
100
7
5
3
2
7
5
3
2
10–2
101
103
7
5
3
2
–60 –20 20
102
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
101
103
7
5
3
2
–60 –20 20
102
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
101
2310–1 5710
023 5710
123 5710
2
103
7
5
3
2
102
7
5
3
2
7
5
3
2
100
231025710
323 5710
423 5710
5
Junction to ambient
Junction to case
Tj = 25°C
VGM = 6V
IFGT I
IRGT I
IRGT III
IFGT III
VGD = 0.1V
PG(AV)
= 0.1W
IGM
= 0.5A
PGM =
1W
Typical Example
Typical Example
IFGT I, IRGT I
IRGT III, IFGT III
V
FGT I
, V
RGT I
V
RGT III
, V
FGT III
BCR1AM-8P Preliminary
R07DS0178EJ0200 Rev.2.00 Page 4 of 7
Aug 25,2015
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
2.0
1.6
1.2
0.8
0.4
02.00 0.4 0.81.21.6
160
120
100
60
20
01.60 0.20.61.01.4
40
80
140
0.4 0.81.2
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–400 40 80 120
14040–40–60 –20 0 20 60 80 100 120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
160
120
100
60
20
01.60 0.20.61.01.4
40
80
140
0.4 0.81.2
140–60 –20 20 60 100
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
-1
–40 0 40 80 120
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
Typical Example
Typical Example
Distribution T
2
+, G–
Typical Example
T
2
+, G+
T
2
–, G–
T
2
–, G+Typical Example
BCR1AM-8P Preliminary
R07DS0178EJ0200 Rev.2.00 Page 5 of 7
Aug 25,2015
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
Test Procedure I
Test Procedure III Test Procedure IV
Test Procedure II
Gate Trigger Characteristics Test Circuits
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
2310
0
5710
1
23 5710
2
23 5710
3
120
0
20
40
60
80
100
140
160
10
1
10
3
7
5
3
2
10
0
2510
1
10
2
7
5
3
2
37 10
2
4
4
42537
4
10
1
7
5
3
2
10
–1
23 5710
0
10
0
7
5
3
2
23 5710
1
4
4
44
10
–1
6Ω6Ω
6Ω6Ω
6V 6V
6V 6V
330Ω330Ω
330Ω330Ω
A
V
A
V
A
V
A
V
Typical Example Typical Example
Tj = 125°C
I Quadrant
III Quadrant
Typical Example
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
I
T
= 1A
τ = 500μs
V
D
= 200V
III Quadrant
I Quadrant
I
FGT I
I
FGT III
I
RGT III
I
RGT I
BCR1AM-8P Preliminary
R07DS0178EJ0200 Rev.2.00 Page 6 of 7
Aug 25,2015
Package Dimensions
SC-43A 0.23g
MASS[Typ.]
T920PRSS0003EA-A
RENESAS CodeJEITA Package Code Previous Code Unit: mm
φ5.0Max
4.4
3.6
11.5Min5.0Max
1.25
Circumscribed circle φ0.7
1.25
1.1
Package Name
TO-92*
MASS (Typ) [g]
0.23
Unit: mm
Previous CodeRENESAS Code
PRSS0003DJ-A TO-92
JEITA Package Code
SC-43A
4.58 ± 0.2
14.47 ± 0.4
1.02 ± 0.1
0.46 ± 0.1
1.27
(3.86 MAX)
0.38
+0.10
−0.05
4.58
+0.25
−0.15
BCR1AM-8P Preliminary
R07DS0178EJ0200 Rev.2.00 Page 7 of 7
Aug 25,2015
Ordering Information
Orderable Part Number Package Packing Note Quantity Remark
BCR1AM-8P#B00 TO-92* Plastic Bag 500 pcs. Straight type
BCR1AM-8P-1#B00 TO-92* Plastic Bag 500 pcs. Straight type, IGT item:1
BCR1AM-8P-A6#B00 TO-92* Plastic Bag 500 pcs. A6 Lead form
BCR1AM-8P-1A6#B00 TO-92* Plastic Bag 500 pcs. A6 Lead form, IGT item:1
BCR1AM-8P-TB#B00 TO-92* Adhesive Tape 2000 pcs. A8 Lead form
BCR1AM-8P-1TB#B00 TO-92* Adhesive Tape 2000 pcs. A8 Lead form, IGT item:1
BCR1AM-8P#BD0 TO-92 Plastic Bag 1000 pcs. Straight type, Halogen-free
BCR1AM-8P-1#BD0 TO-92 Plastic Bag 1000 pcs. Straight type, Halogen-free, IGT item:1
BCR1AM-8P-A6#BD0 TO-92 Plastic Bag 1000 pcs. A6 Lead form, Halogen-free
BCR1AM-8P-1A6#BD0 TO-92 Plastic Bag 1000 pcs. A6 Lead form, Halogen-free, IGT item:1
BCR1AM-8P-TB#BD0 TO-92 Adhesive Tape 2000 pcs. A8 Lead form, Halogen-free
BCR1AM-8P-1TB#BD0 TO-92 Adhesive Tape 2000 pcs. A8 Lead form, Halogen-free, IGT item:1
Note : Please confirm the specification about the shippin g in detail.
Notice
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Refer to "http://www.renesas.com/" for the latest and detailed information.
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Tel: +1-408-588-6000, Fax: +1-408-588-6130
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Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
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No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India
Tel: +91-80-67208700, Fax: +91-80-67208777
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12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
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