2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET ADE-208-1257 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current ID 3 A 12 A 3 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 20 W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2 2SK1299(L), 2SK1299(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 100 -- -- V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage drain current I DSS -- -- 100 A VDS = 80 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.0 V I D = 1 mA, VDS = 10 V Static Drain to source on state resistance RDS(on) -- 0.25 0.35 I D = 2 A, VGS = 10 V *1 -- 0.30 0.45 I D = 2 A, VGS = 4 V 1* Forward transfer admittance |yfs| 2.4 4.0 -- S I D = 2 A, VDS = 10 V *1 Input capacitance Ciss -- 400 -- pF VDS = 10 V, VGS = 0, Output capacitance Coss -- 165 -- pF f = 1 MHz Reverse transfer capacitance Crss -- 45 -- pF Turn-on delay time t d(on) -- 5 -- ns I D = 2 A, VGS = 10 V, Rise time tr -- 35 -- ns RL = 15 Turn-off delay time t d(off) -- 160 -- ns Fall time tf -- 60 -- ns Body to drain diode forward voltage VDF -- 1.0 -- V I F = 3 A, VGS = 0 Body to drain diode reverse recovery time t rr -- 135 -- ns I F = 3 A, VGS = 0, diF/dt = 50 A/s Note: 1. Pulse test 3 2SK1299(L), 2SK1299(S) Maximum Safe Operation Area Power vs. Temperature Derating 50 10 10 PW 5 = 2 10 1 m s m s 1 0.5 0.2 0.1 s s 20 10 0 10 Drain Current ID (A) Operation in this area 20 is limited by RDS (on) n tio ra C) pe O 25 C = D TC ( Channel Dissipation Pch (W) 30 (1 Sh ot ) Ta = 25C 0.05 0 50 100 Case Temperature TC (C) 1 150 Typical Output Characteristics 10 10 V 5V Typical Transfer Characteristics 5 4.5 V VDS = 10 V Pulse Test 4V 4 2 4 3.5 V 3V VGS = 2.5 V Drain Current ID (A) Drain Current ID (A) 8 6 3 2 1 Pulse Test 0 4 2 5 10 20 50 100 200 500 1000 Drain to Source Voltage VDS (V) 2 4 6 8 10 Drain to Source Voltage VDS (V) 0 25C 75C TC = -25C 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1299(L), 2SK1299(S) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) 2.0 Pulse Test 1.6 ID = 5 A 1.2 0.8 2A 0.4 0 1A 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test 2 1 0.5 VGS = 4 V 0.1 0.05 0.2 ID = 5 A 2A 1A 5A VGS = 4 V 1A 0.2 2A 10 V 0.1 Pulse Test 0 -40 0 40 120 80 Case Temperature TC (C) 160 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 0.5 0.3 0.5 1 5 2 10 Drain Current ID (A) 20 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.4 10 V 0.2 10 VDS = 10 V 5 Pulse Test TC = -25C 25C 2 75C 1 0.5 0.2 0.1 0.05 1.0 2 0.2 1 0.5 Drain Current ID (A) 5 5 2SK1299(L), 2SK1299(S) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 1000 Ciss 200 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 Crss 10 di/dt = 50 A/s VGS = 0, Ta = 25C Pulse Test 10 5 0.1 Coss 100 VGS = 0 f = 1 MHz 1 0.2 1 0.5 2 5 Reverse Drain Current IDR (A) 0 10 Switching Characteristics Dynamic Input Characteristics 40 16 12 VGS VDS 8 VDD = 25 V 50 V 80 V 8 ID = 3 A 16 24 32 Gate Charge Qg (nc) 4 0 40 Switching Time t (ns) 120 0 6 VDD = 80 V 50 V 25 V 160 80 500 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 200 10 20 30 40 50 Drain to Source Voltage VDS (V) td (off) 200 100 tf 50 tr 20 . 10 td (on) 5 0.1 0.2 VGS = 10 V, VDD =. 30 V PW = 2s, duty < 0.1 % 0.5 1 2 Drain Current ID (A) 5 10 2SK1299(L), 2SK1299(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 5V 4 VGS = 10 V 2 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 0 Normalized Transient Thermal Impedance s (t) VGS = 0, - 5 V Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25C D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch-c (t) = s (t) * ch-c ch-c = 6.25C/W, TC = 25C PDM 0.02 1 se 0 0.03 0. hot Pul S 1 0.01 10 T 100 1m 10 m Pulse Width PW (s) 100 m D =PW T PW 1 10 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Vin = 10 V . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf 7 2SK1299(L), 2SK1299(S) Package Dimensions As of January, 2001 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 5.5 0.5 6.5 0.5 5.4 0.5 2.29 0.5 16.2 0.5 1.15 0.1 0.8 0.1 3.1 0.5 1.2 0.3 2.29 0.5 0.55 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 DPAK (L)-(1) -- Conforms 0.42 g 2SK1299(L), 2SK1299(S) As of January, 2001 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(1),(2) -- Conforms 0.28 g 9 2SK1299(L), 2SK1299(S) As of January, 2001 (0.1) 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.5 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(3) -- Conforms 0.28 g 2SK1299(L), 2SK1299(S) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 11