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GND
LOP
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GND
GND
GND
VCC
GND
GND
GND
BBIM
BBQM
BBIP
BBQP
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GND
GND
GND
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TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
TRF37T05 300-MHz to 4-GHz Quadrature Modulator
1 Features 3 Description
The TRF37T05 is a low-noise direct quadrature
1• High Linearity: modulator with exceptional TDD performance. It is
– Output IP3: 30 dBm at 1850 MHz capable of converting complex modulated signals
• Low Output Noise Floor: –160 dBm/Hz from baseband or IF directly up to RF. The
TRF37T05 is a high-performance, superior-linearity
• 78-dBc Single-Carrier WCDMA ACPR device that is ideal to up-convert to RF frequencies of
at –10-dBm Channel Power 300 MHz (Note: appropriate matching network is
• Unadjusted Carrier Suppression: –40 dBm required for optimal performance at 300 MHz)
• Unadjusted Sideband Suppression: –45 dBc through 4 GHz. The modulator is implemented as a
double-balanced mixer.
• Single Supply: 3.3-V Operation
• 1-bit Gain Step Control The RF output block consists of a differential-to-
single-ended converter that is capable of driving a
• Fast Power-Up/Power-Down single-ended 50-Ωload. The TRF37T05 requires a
0.25-V common-mode voltage for optimum linearity
2 Applications performance. The TRF37T05 also provides a fast
• Cellular Base Station Transmitter power-down pin that can be used to reduce power
dissipation while maintaining optimized adjusted
• CDMA: IS95, UMTS, CDMA2000, TD-SCDMA carrier feed-through performance in TDD
• LTE (Long Term Evolution), TD-LTE applications.
• TDMA: GSM, EDGE/UWC-136 The TRF37T05 is available in an RGE-24 VQFN
• Multicarrier GSM (MC-GSM) package.
• Wireless MAN Wideband Transceivers Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
TRF37T05 VQFN (24) 4.00 mm x 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Block Diagram
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
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Table of Contents
7.1 Overview................................................................. 22
1 Features.................................................................. 17.2 Functional Block Diagram....................................... 22
2 Applications ........................................................... 17.3 Feature Description................................................. 22
3 Description............................................................. 17.4 Device Functional Modes........................................ 22
4 Revision History..................................................... 28 Application and Implementation ........................ 23
5 Pin Configuration and Functions......................... 38.1 Application Information............................................ 23
6 Specifications......................................................... 48.2 Typical Application.................................................. 23
6.1 Absolute Maximum Ratings ..................................... 49 Power Supply Recommendations...................... 29
6.2 ESD Ratings.............................................................. 410 Layout................................................................... 30
6.3 Recommended Operating Conditions....................... 410.1 Layout Guidelines ................................................. 30
6.4 Thermal Information.................................................. 410.2 Layout Example .................................................... 30
6.5 Electrical Characteristics: General............................ 511 Device and Documentation Support ................. 31
6.6 Electrical Characteristics........................................... 611.1 Device Support .................................................... 31
6.7 Typical Characteristics: Single-Tone Baseband..... 10 11.2 Community Resources.......................................... 32
6.8 Typical Characteristics: Two-Tone Baseband ........ 12 11.3 Trademarks........................................................... 32
6.9 Typical Characteristics: Two-Tone Baseband, Mid-
Band Calibration ...................................................... 16 11.4 Glossary................................................................ 32
6.10 Typical Characteristics: No Baseband.................. 18 12 Mechanical, Packaging, and Orderable
6.11 Typical Characteristics: Two-Tone Baseband ...... 19 Information ........................................................... 32
7 Detailed Description............................................ 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (June 2013) to Revision A Page
• Added the ESD table,Detailed Description,Application and Implementation,Device and Documentation Support,
Mechanical, Packaging, and Orderable Information............................................................................................................... 1
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PD
GND
LOP
LOM
GND
GC
VCC
GND
RFOUT
GND
GND
GND
Thermal Pad
VCC
GND
GND
GND
BBIM
BBQM
BBIP
BBQP
GND
GND
GND
GND
1
2
3
4
5
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7
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9
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18
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TRF37T05
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SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
5 Pin Configuration and Functions
RGE Package
24 Pin VQFN
Top View
Pin Functions
PIN I/O DESCRIPTION
NO. NAME
1 PD I Power-down digital input (high = device off)
2 GND I Ground
3 LOP I Local oscillator input
4 LOM I Local oscillator input
5 GND I Ground
6 GC I Gain control digital input (high = high gain)
7 GND — Ground or leave unconnected
8 GND I Ground
9 BBQM I In-quadrature input
10 BBQP I In-quadrature input
11 GND I Ground
12 GND I Ground
13 GND I Ground
14 GND I Ground
15 GND I Ground
16 RFOUT O RF output
17 GND I Ground
18 VCC I Power supply
19 GND I Ground
20 GND I Ground
21 BBIP I In-phase input
22 BBIM I In-phase input
23 GND I Ground
24 VCC I Power supply
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6 Specifications
6.1 Absolute Maximum Ratings(1)
Over operating free-air temperature range (unless otherwise noted). MIN MAX UNIT
Supply voltage range(2) –0.3 6 V
Digital I/O voltage range –0.3 VCC +0.5 V
Operating virtual junction temperature range, TJ–40 150 °C
Operating ambient temperature range, TA–40 85 °C
Storage temperature range, Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
6.2 ESD Ratings VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000
V(ESD) Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22- ±250
C101(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. .
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted). MIN NOM MAX UNIT
VCC Power-supply voltage 3.15 3.3 3.6 V
6.4 Thermal Information TRF37T05
THERMAL METRIC RGE (VQFN) UNIT
24 PINS
θJA Junction-to-ambient thermal resistance 38.4 °C/W
θJCtop Junction-to-case (top) thermal resistance 42.5 °C/W
θJB Junction-to-board thermal resistance 16.6 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 16.6 °C/W
θJCbot Junction-to-case (bottom) thermal resistance 6.6 °C/W
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6.5 Electrical Characteristics: General
Over recommended operating conditions; at power supply = 3.3 V and TA= 25°C, unless otherwise noted.
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
DC PARAMETERS
TA= 25°C, device on (PD = low) 306 mA
ICC Total supply current TA= 25°C, device off (PD = high) 146 mA
LO INPUT
LO low frequency 300 MHz
fLO LO high frequency 4000 MHz
LO input power –10 0 +15 dBm
BASEBAND INPUTS
I and Q input dc common-mode
VCM 0.25 0.5 V
voltage
BW 1-dB input frequency bandwidth 1000 MHz
Resistance 8 kΩ
ZIInput impedance Parallel capacitance 4.6 pF
POWER ON/OFF
Turn on time PD = low to 90% final output power 0.2 μs
Turn off time PD = high to initial output power –30 dB 0.2 μs
DIGITAL INTERFACE
VIH PD high-level input voltage 2 V
VIL PD low-level input voltage 0.8 V
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6.6 Electrical Characteristics
Over recommended operating conditions; at power supply = 3.3 V, TA= 25°C, VCM = 0.25 V; LO Power = 0 dBm, single-
ended (LOP); GC set low, VIN BB = 1 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching circuit,
unless otherwise noted.
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
fLO = 400 MHz
Output RMS voltage over input I (or Q) RMS –4.7 dB
voltage, GC set low
G Voltage gain Output RMS voltage over input I (or Q) RMS –1.9 dB
voltage, GC set high
GC set low –0.7 dBm
POUT Output power GC set high 2.1 dBm
GC set low 8.5 dBm
P1dB Output compression point GC set high 9.1 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 26 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 25.4 dBm
Measured at fLO + (fBB1± fBB2), GC set low 60.2 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set high 61.9 dBm
SBS Unadjusted sideband suppression –57.4 dBc
Measured at LO frequency –51.6 dBm
CF Unadjusted carrier feedthrough Measured at 2 x LO –50 dBm
Measured at 3 x LO –49 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –166.7 dBm/Hz
Measured with ±1-MHz tone at 0.5 VPP each at
HD2BB Baseband harmonics –67 dBc
fLO ±(2 x fBB)
Measured with ±1-MHz tone at 0.5 VPP each at
HD3BB Baseband harmonics –64 dBc
fLO ±(3 x fBB)
fLO = 750 MHz
Output RMS voltage over input I (or Q) RMS 0.2 dB
voltage, GC set low
G Voltage gain Output RMS voltage over input I (or Q) RMS 3 dB
voltage, GC set high
GC set low 4.2 dBm
POUT Output power GC set high 7 dBm
GC set low 13.3 dBm
P1dB Output compression point GC set high 13.9 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 31.5 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 30.8 dBm
Measured at fLO + (fBB1± fBB2), GC set low 73.6 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set high 80.5 dBm
SBS Unadjusted sideband suppression –45.2 dBc
Measured at LO frequency –45.7 dBm
CF Unadjusted carrier feedthrough Measured at 2 x LO –46 dBm
Measured at 3 x LO –53.5 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –159.9 dBm/Hz
Measured with ±1-MHz tone at 0.5 VPP each at
HD2BB Baseband harmonics –70 dBc
fLO ±(2 x fBB)
Measured with ±1-MHz tone at 0.5 VPP each at
HD3BB Baseband harmonics –66 dBc
fLO ±(3 x fBB)
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Electrical Characteristics (continued)
Over recommended operating conditions; at power supply = 3.3 V, TA= 25°C, VCM = 0.25 V; LO Power = 0 dBm, single-
ended (LOP); GC set low, VIN BB = 1 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching circuit,
unless otherwise noted.
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
fLO = 900 MHz
Output RMS voltage over input I (or Q) RMS 0.3 dB
voltage, GC set low
G Voltage gain Output RMS voltage over input I (or Q) RMS 3.1 dB
voltage, GC set high
GC set low 4.3 dBm
POUT Output power GC set high 7.1 dBm
GC set low 13.2 dBm
P1dB Output compression point GC set high 13.7 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 31.7 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 30.9 dBm
Measured at fLO + (fBB1± fBB2), GC set low 71.5 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set high 75.3 dBm
SBS Unadjusted sideband suppression –43.8 dBc
Measured at LO frequency –48.5 dBm
CF Unadjusted carrier feedthrough Measured at 2 x LO –53 dBm
Measured at 3 x LO –50 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –157.9 dBm/Hz
Measured with ±1-MHz tone at 0.5 VPP each at
HD2BB Baseband harmonics –80 dBc
fLO ±(2 x fBB)
Measured with ±1-MHz tone at 0.5 VPP each at
HD3BB Baseband harmonics –65 dBc
fLO ±(3 x fBB)
fLO = 1840 MHz
Output RMS voltage over input I (or Q) RMS –0.1 dB
voltage, GC set low
G Voltage gain Output RMS voltage over input I (or Q) RMS 2.5 dB
voltage, GC set high
GC set low 3.9 dBm
POUT Output power GC set high 6.5 dBm
GC set low 13.2 dBm
P1dB Output compression point GC set high 13.6 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 32.1 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 30.3 dBm
Measured at fLO + (fBB1± fBB2), GC set low 60.8 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set high 62 dBm
SBS Unadjusted sideband suppression –43.4 dBc
Measured at LO frequency –42.4 dBm
CF Unadjusted carrier feedthrough Measured at 2 x LO –41 dBm
Measured at 3 x LO –53 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –158.8 dBm/Hz
Measured with ±1-MHz tone at 0.5 VPP each at
HD2BB Baseband harmonics –69 dBc
fLO ±(2 x fBB)
Measured with ±1-MHz tone at 0.5 VPP each at
HD3BB Baseband harmonics –80 dBc
fLO ±(3 x fBB)
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Electrical Characteristics (continued)
Over recommended operating conditions; at power supply = 3.3 V, TA= 25°C, VCM = 0.25 V; LO Power = 0 dBm, single-
ended (LOP); GC set low, VIN BB = 1 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching circuit,
unless otherwise noted.
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
fLO = 2140 MHz
Output RMS voltage over input I (or Q) RMS 0.1 dB
voltage, GC set low
G Voltage gain Output RMS voltage over input I (or Q) RMS 2.9 dB
voltage, GC set high
GC set low 4.1 dBm
POUT Output power GC set high 6.9 dBm
GC set low 13.1 dBm
P1dB Output compression point GC set high 13.5 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 28.6 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 27.6 dBm
Measured at fLO + (fBB1± fBB2), GC set low 65.5 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set high 68.2 dBm
SBS Unadjusted sideband suppression –45.6 dBc
Measured at LO frequency –39.3 dBm
CF Unadjusted carrier feedthrough Measured at 2 x LO –37 dBm
Measured at 3 x LO –46 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –160.0 dBm/Hz
Measured with ±1-MHz tone at 0.5 VPP each at
HD2BB Baseband harmonics –61 dBc
fLO ±(2 x fBB)
Measured with ±1-MHz tone at 0.5 VPP each at
HD3BB Baseband harmonics –60 dBc
fLO ±(3 x fBB)
fLO = 2600 MHz
Output RMS voltage over input I (or Q) RMS –0.8 dB
voltage, GC set low
G Voltage gain Output RMS voltage over input I (or Q) RMS 2 dB
voltage, GC set high
GC set low 3.2 dBm
POUT Output power GC set high 5.6 dBm
GC set low 12.5 dBm
P1dB Output compression point GC set high 12.8 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 28 dBm
IP3 Output IP3 FfBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 27.2 dBm
Measured at fLO + (fBB1± fBB2), GC set low 67.9 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set high 66.4 dBm
SBS Unadjusted sideband suppression –52.9 dBm
Measured at LO frequency –37.8 dBm
CF Unadjusted carrier feedthrough Measured at 2 x LO –41 dBm
Measured at 3 x LO –42 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –160.6 dBm/Hz
Measured with ±1-MHz tone at 0.5 VPP each at
HD2BB Baseband harmonics –67 dBc
fLO ±(2 x fBB)
Measured with ±1-MHz tone at 0.5 VPP each at
HD3BB Baseband harmonics –59 dBc
fLO ±(3 x fBB)
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Electrical Characteristics (continued)
Over recommended operating conditions; at power supply = 3.3 V, TA= 25°C, VCM = 0.25 V; LO Power = 0 dBm, single-
ended (LOP); GC set low, VIN BB = 1 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching circuit,
unless otherwise noted.
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
fLO = 3500 MHz
Output RMS voltage over input I (or Q) RMS –1 dB
voltage, GC set low
G Voltage gain Output RMS voltage over input I (or Q) RMS 1.8 dB
voltage, GC set high
GC set low 3 dBm
POUT Output power GC set high 5.8 dBm
GC set low 12.1 dBm
P1dB Output compression point GC set high 12.3 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 23.8 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 25.3 dBm
Measured at fLO + (fBB1± fBB2), GC set low 47.8 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set high 48.6 dBm
SBS Unadjusted sideband suppression –45.2 dBm
Measured at LO frequency –31.6 dBm
CF Unadjusted carrier feedthrough Measured at 2 x LO –30 dBm
Measured at 3 x LO –53 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –160.6 dBm/Hz
Measured with ±1-MHz tone at 0.5 VPP each at
HD2BB Baseband harmonics –54 dBc
fLO ±(2 x fBB)
Measured with ±1-MHz tone at 0.5 VPP each at
HD3BB Baseband harmonics –50 dBc
fLO ±(3 x fBB)
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−2
−1
0
1
2
3
4
5
6
7
8
9
10
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Output Power (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
VCM = 0.5 V
G066
−20
−15
−10
−5
0
5
10
15
0.01 0.1 1 10
Baseband Voltage Single−Ended (Vpp)
Output Power (dBm)
LO Frequency = 2140 MHz
G001
−2
−1
0
1
2
3
4
5
6
7
8
9
10
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Output Power (dBm)
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
G004
−2
−1
0
1
2
3
4
5
6
7
8
9
10
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Output Power (dBm)
Gain Control = Off
Gain Control = On
G005
−2
−1
0
1
2
3
4
5
6
7
8
9
10
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Output Power (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
G002
−2
−1
0
1
2
3
4
5
6
7
8
9
10
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Output Power (dBm)
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G003
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6.7 Typical Characteristics: Single-Tone Baseband
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude = 1-
VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.
Figure 1. Output Power vs LO Frequency (fLO) and Figure 2. Output Power vs LO Frequency (fLO) and Supply
Temperature Voltage
Figure 3. Output Power vs LO Frequency (fLO) Over LO Figure 4. Output Power vs LO Frequency (fLO) and Gain
Drive Level Select Setting
Figure 5. Output Power vs LO Frequency (fLO) and Figure 6. Output Power vs Baseband Voltage at 2140 MHz
Temperature at VCM = 0.5 V
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5
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0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
P1dB (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
VCM = 0.5 V
G010
5
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0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
P1dB (dBm)
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
G008
5
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0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
P1dB (dBm)
Gain Control = Off
Gain Control = On
G009
5
6
7
8
9
10
11
12
13
14
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16
17
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
P1dB (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
G006
5
6
7
8
9
10
11
12
13
14
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16
17
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
P1dB (dBm)
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
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Typical Characteristics: Single-Tone Baseband (continued)
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude = 1-
VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.
Figure 7. P1dB vs LO Frequency (fLO) and Temperature Figure 8. P1dB vs LO Frequency (fLO) and Supply Voltage
Figure 9. P1dB vs LO Frequency (fLO) and LO Drive Level Figure 10. P1dB vs LO Frequency (fLO) and Gain Select
Setting
Figure 11. P1dB vs LO Frequency (fLO) and Temperature AT VCM = 0.5 V
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30
32
34
36
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP3 (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
VCM = 0.5 V
G014
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP2 (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
G016
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30
32
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0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP3 (dBm)
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
G013
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12
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16
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20
22
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30
32
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Frequency (MHz)
OIP3 (dBm)
Gain Control = Off
Gain Control = On
G015
10
12
14
16
18
20
22
24
26
28
30
32
34
36
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP3 (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
G011
10
12
14
16
18
20
22
24
26
28
30
32
34
36
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP3 (dBm)
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G012
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
6.8 Typical Characteristics: Two-Tone Baseband
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
Figure 12. OIP3 vs LO Frequency (fLO) and Temperature Figure 13. OIP3 vs LO FRequency (fLO) anD Supply Voltage
Figure 14. OIP3 vs LO Frequency (fLO) and LO Drive Level Figure 15. OIP3 vs LO Frequency (fLO) And Gain Select
Setting
Figure 16. OIP3 vs LO Frequency (fLO) and Temperature AT Figure 17. OIP2 vs LO Frequency (fLO) and Temperature
VCM = 0.5 V
12 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TRF37T05
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0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
G021
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−50
−45
−40
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−15
−10
−5
0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Carrier Feedthrough (dBm)
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G022
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP2 (dBm)
Gain Control = Off
Gain Control = On
G020
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP2 (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
VCM = 0.5 V
G019
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP2 (dBm)
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G017
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP2 (dBm)
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
G018
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
Typical Characteristics: Two-Tone Baseband (continued)
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
Figure 18. OIP2 vs LO Frequency (fLO) and Supply Voltage Figure 19. OIP2 vs LO Frequency (fLO) and LO Drive Level
Figure 20. OIP2 vs LO Frequency (fLO) and Gain Select Figure 21. OIP2 vs LO Frequency (fLO) and Temperature AT
Setting VCM = 0.5 V
Figure 22. Unadjusted Carrier Feedthrough vs LO Figure 23. Unadjusted Carrier Feedthrough vs LO
Frequency (fLO) and Temperature Frequency (fLO) and Supply Voltage
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Links: TRF37T05
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−25
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−15
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−5
0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Sideband Suppression (dBc)
TA = −40°C
TA = 25°C
TA = 85°C
G026
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−50
−45
−40
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−15
−10
−5
0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Sideband Suppression (dBc)
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G027
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−50
−45
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−15
−10
−5
0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
VCM = 0.5 V
G024
−100
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−40
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−20
−10
0
10
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Adjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at TA = 25°C
Device Count = 10
G060
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−15
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0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Carrier Feedthrough (dBm)
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
G023
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−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Carrier Feedthrough (dBm)
Gain Control = Off
Gain Control = On
G025
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
Typical Characteristics: Two-Tone Baseband (continued)
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
Figure 24. Unadjusted Carrier Feedthrough vs LO Figure 25. Unadjusted Carrier Feedthrough vs LO
Frequency (fLO) and LO Drive Level Frequency (fLO) and Gain Select Setting
Figure 26. Unadjusted Carrier Feedthrough vs LO Figure 27. Carrier Feedthrough vs LO Frequency (fLO) and
Frequency (fLO) and Temperature at VCM = 0.5 V Temperature After Nulling at 25°C; Multiple Devices
Figure 28. Unadjusted Sideband Suppression vs LO Figure 29. Unadjusted Sideband Suppression vs LO
Frequency (fLO) and Temperature Frequency (fLO) and Supply Voltage
14 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TRF37T05
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−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Sideband Suppression (dBc)
TA = −40°C
TA = 25°C
TA = 85°C
VCM = 0.5 V
G029
−70
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−60
−55
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Sideband Suppression (dBc)
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
G028
−70
−65
−60
−55
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted Sideband Suppression (dBc)
Gain Control = Off
Gain Control = On
G030
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
Typical Characteristics: Two-Tone Baseband (continued)
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
Figure 30. Unadjusted Sideband Suppression vs LO Figure 31. Unadjusted Sideband Suppression vs LO
Frequency (fLO) and LO Drive Level Frequency (fLO) and Gain Select Setting
Figure 32. Unadjusted sideband Suppression vs LO Frequency (fLO) and Temperature at VCM = 0.5 V
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Links: TRF37T05
−100
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−30
−20
−10
2500 2525 2550 2575 2600 2625 2650 2675 2700
Frequency (MHz)
Adjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 2600MHz − TA = 25°C
G040
−100
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−50
−40
−30
−20
−10
3400 3425 3450 3475 3500 3525 3550 3575 3600
Frequency (MHz)
Adjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 3500MHz − TA = 25°C
G041
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1880 1900 1920 1940 1960 1980 2000 2020 2040
Frequency (MHz)
Adjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 1960MHz − TA = 25°C
G038
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−10
2060 2080 2100 2120 2140 2160 2180 2200 2220
Frequency (MHz)
Adjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 2140MHz − TA = 25°C
G039
−100
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−50
−40
−30
−20
−10
680 700 720 740 760 780 800 820
Frequency (MHz)
Adjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 748MHz − TA = 25°C
G036
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
870 890 910 930 950 970 990 1010
Frequency (MHz)
Adjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 942.5MHz − TA = 25°C
G037
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
6.9 Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted. Single point adjustment mid-band.
Figure 33. Adjusted Carrier Feedthrough vs LO Frequency Figure 34. Adjusted Carrier Feedthrough vs LO Frequency
and Temperature (750 LTE Band) and Temperature (GSM900 Band)
Figure 35. Adjusted Carrier Feedthrough vs LO Frequency Figure 36. Adjusted carrier Feedthrough vs LO Frequency
and Temperature (PCS Band) and Temperature (UMTS Band)
Figure 37. Adjusted Carrier Feedthrough vs LO Frequency Figure 38. Adjusted Carrier Feedthrough vs LO Frequency
and Temperature (2.6 GHz LTE Band) and Temperature (WiMAX/LTE Band)
16 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TRF37T05
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
2500 2525 2550 2575 2600 2625 2650 2675 2700
Frequency (MHz)
Adjusted Sideband Suppression (dBc)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 2600MHz − TA = 25°C
G046
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
3400 3425 3450 3475 3500 3525 3550 3575 3600
Frequency (MHz)
Adjusted Sideband Suppression (dBc)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 3500MHz − TA = 25°C
G047
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
1880 1900 1920 1940 1960 1980 2000 2020 2040
Frequency (MHz)
Adjusted Sideband Suppression (dBc)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 1960MHz − TA = 25°C
G044
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
2060 2080 2100 2120 2140 2160 2180 2200 2220
Frequency (MHz)
Adjusted Sideband Suppression (dBc)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 2140MHz − TA = 25°C
G045
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
680 700 720 740 760 780 800 820
Frequency (MHz)
Adjusted Sideband Suppression (dBc)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 748MHz − TA = 25°C
G042
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
870 890 910 930 950 970 990 1010
Frequency (MHz)
Adjusted Sideband Suppression (dBc)
TA = −40°C
TA = 25°C
TA = 85°C
Adjusted at 942.5MHz − TA = 25°C
G043
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration (continued)
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted. Single point adjustment mid-band.
Figure 39. Adjusted Sideband Suppression vs LO Figure 40. Adjusted Sideband Suppression vs LO
Frequency and Temperature (750 LTE Band) Frequency and Temperature (GSM900 Band)
Figure 41. Adjusted Sideband Suppression vs LO Figure 42. Adjusted Sideband Suppression vs LO
Frequency and Temperature (PCS Band) Frequency and Temperature (UMTS Band)
Figure 43. Adjusted Sideband Suppression vs LO Figure 44. Adjusted Sideband Suppression vs LO
Frequency and Temperature (2.6 GHz LTE Band) Frequency and Temperature (WiMAX/LTE Band)
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Links: TRF37T05
−160
−158
−156
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−146
−144
−25 −20 −15 −10 −5 0 5 10
RF Output Power (dBm)
RF Output Noise Floor (dBm/Hz)
LO Freq = 948.5 MHz
LO Freq = 1848 MHz
LO Freq = 2167 MHz
G034
−170
−168
−166
−164
−162
−160
−158
−156
−154
−152
−150
−148
−146
−144
−142
−140
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
RF Output Noise Floor (dBm/Hz)
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
G033
−170
−168
−166
−164
−162
−160
−158
−156
−154
−152
−150
−148
−146
−144
−142
−140
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
RF Output Noise Floor (dBm/Hz)
Gain Control = Off
Gain Control = On
G035
−170
−168
−166
−164
−162
−160
−158
−156
−154
−152
−150
−148
−146
−144
−142
−140
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
RF Output Noise Floor (dBm/Hz)
TA = −40°C
TA = 25°C
TA = 85°C
G031
−170
−168
−166
−164
−162
−160
−158
−156
−154
−152
−150
−148
−146
−144
−142
−140
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
RF Output Noise Floor (dBm/Hz)
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G032
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
6.10 Typical Characteristics: No Baseband
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); and input baseband ports terminated in 50 Ω, unless
otherwise noted.
Figure 45. Output noisE vs LO Frequency (fLO) and Figure 46. Output Noise vs LO Frequency (fLO) and Supply
Temperature Voltage
Figure 47. Output Noise vs LO Frequency (fLO) AND LO Figure 48. Output Noise vs LO Frequency (fLO) and Gain
Drive Level Select Setting
Figure 49. Output Noise vs Output Power
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Product Folder Links: TRF37T05
290 295 300 305 310 315 320 325290 295 300 305 310 315 320 325
0
5
10
15
20
25
30
35
40
Total Icc (mA)
Distribution (%)
Mean =304.2 mA
StDev = 5.1
TA = 25°C
G064
27.5 28 28.5 29 29.5 30 30.527.5 28 28.5 29 29.5 30 30.5
0
5
10
15
20
25
30
35
40
45
50
OIP3 (dBm)
Distribution (%)
Mean = 28.6 dBm
StDev = 0.4
G050
290 295 300 305 310 315 320 325290 295 300 305 310 315 320 325
0
5
10
15
20
25
30
35
40
45
50
55
60
Total Icc (mA)
Distribution (%)
Mean =306.4 mA
StDev = 4.4
Vcc = 3.3 V
TA = 25°C
G065
290 295 300 305 310 315 320 325290 295 300 305 310 315 320 325
0
5
10
15
20
25
30
35
40
Total Icc (mA)
Distribution (%)
Mean =303.8 mA
StDev = 6.9
Vcc = 3.3 V
G063
−100
−90
−80
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−20
−10
0
10
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
RF Harmonic (dBc)
RF 2nd Harmonic
RF 3rd Harmonic
RF 4th Harmonic
G048
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
10
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
LO Harmonic (dBm)
LO 2nd Harmonic
LO 3rd Harmonic
LO 4th Harmonic
G049
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
6.11 Typical Characteristics: Two-Tone Baseband
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
Figure 50. RF Harmonics vs LO FRequency (fLO) Figure 51. LO Harmonics vs LO Frequency (fLO)
Figure 52. Nominal Current Consumption Distribution Figure 53. Current Consumption Distribution Over
Temperature
Figure 54. Current Consumption Distribution Over VCC Figure 55. OIP3 Distribution at fLO = 2140 MHz
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 19
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31.2 31.4 31.6 31.8 32 32.2 32.431.2 31.4 31.6 31.8 32 32.2 32.4
0
5
10
15
20
25
30
35
40
45
50
OIP3 (dBm)
Distribution (%)
Mean = 31.7 dBm
StDev = 0.2
G055
69 69.5 70 70.5 71 71.5 72 72.5 73 73.5 7469 69.5 70 70.5 71 71.5 72 72.5 73 73.5 74
0
5
10
15
20
25
30
35
40
45
OIP2 (dBm)
Distribution (%)
Mean = 71.5 dBm
StDev = 0.5
G056
−52 −51 −50 −49 −48 −47 −46 −45 −44 −43 −42 −41−52 −51 −50 −49 −48 −47 −46 −45 −44 −43 −42 −41
0
5
10
15
20
25
30
Unadjusted Sideband Suppression (dBc)
Distribution (%)
Mean = −45.6 dBc
StDev = 1.4
G053
−43 −42 −41 −40 −39 −38 −37 −36−43 −42 −41 −40 −39 −38 −37 −36
0
5
10
15
20
25
30
35
40
45
Unadjusted Carrier Feedthrough (dBm)
Distribution (%)
Mean = −39.3 dBm
StDev = 0.8
G054
62.5 63 63.5 64 64.5 65 65.5 66 66.5 67 67.5 6862.5 63 63.5 64 64.5 65 65.5 66 66.5 67 67.5 68
0
5
10
15
20
25
30
OIP2 (dBm)
Distribution (%)
Mean = 65.5 dBm
StDev = 0.8
G051
12.8 12.9 13 13.1 13.2 13.3 13.4 13.512.8 12.9 13 13.1 13.2 13.3 13.4 13.5
0
5
10
15
20
25
30
35
40
P1dB (dBm)
Distribution (%)
Mean = 13.1 dBm
StDev = 0.1
G052
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
Typical Characteristics: Two-Tone Baseband (continued)
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
Figure 56. OIP2 Distribution at fLO = 2140 MHz Figure 57. P1dB Distribution at fLO = 2140 MHz, fBB = 5.5
MHz
Figure 58. Unadjusted Sideband Suppression DIstribution at Figure 59. Unadjusted Carrier Feedthrough Distribution at
fLO = 2140 MHz fLO = 2140 MHz
Figure 60. OIP3 Distribution at fLO = 900 MHz Figure 61. OIP2 Distribution at fLO = 900 MHz
20 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TRF37T05
−85 −80 −75 −70 −65 −60 −55 −50 −45 −40 −35−85 −80 −75 −70 −65 −60 −55 −50 −45 −40 −35
0
5
10
15
20
25
30
35
40
45
50
Unadjusted Carrier Feedthrough (dBm)
Distribution (%)
Mean = −48.5 dBm
StDev = 4.9
G059
12.9 13 13.1 13.2 13.3 13.4 13.5 13.612.9 13 13.1 13.2 13.3 13.4 13.5 13.6
0
5
10
15
20
25
30
35
40
45
50
55
P1dB (dBm)
Distribution (%)
Mean = 13.2 dBm
StDev = 0.1
G057
−48 −47 −46 −45 −44 −43 −42 −41 −40−48 −47 −46 −45 −44 −43 −42 −41 −40
0
5
10
15
20
25
30
35
40
45
50
Unadjusted Sideband Suppression (dBc)
Distribution (%)
Mean = −43.8 dBc
StDev = 0.9
G058
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
Typical Characteristics: Two-Tone Baseband (continued)
VCC = 3.3 V; TA= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
Figure 62. P1dB distribution at fLO = 900 MHz, fBB = 5.5 MHz Figure 63. Unadjusted Sideband Suppression Distribution at
fLO = 900 MHz
Figure 64. Unadjusted Carrier Feedthrough Distribution at fLO = 900 MHz
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 21
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PD
GND
LOP
LOM
GND
GC
VCC
GND
RFOUT
GND
GND
GND
VCC
GND
GND
GND
BBIM
BBQM
BBIP
BBQP
GND
GND
GND
GND
1
2
3
4
5
6
7
8
9
10
11
12
18
17
16
15
14
13
24
23
22
21
20
19
S
0/90
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
7 Detailed Description
7.1 Overview
TRF37T05 is a low-noise direct quadrature modulator with high linearity, capable of converting complex
modulated signals from baseband or IF directly to RF. With high-performance and superior-linearity , TRF37T05
is an ideal device to up-convert to RF frequencies of 300 MHz through 4 GHz. With appropriate matching
network, optimal performance can be obtained. The modulator is implemented as a double-balanced mixer.
TRF37T05 has a RF output block which consists of a differential-to-single-ended converter that is capable of
directly driving a single-ended 50-Ωload. The TRF37T05 requires a 0.25-V common-mode voltage for optimal
linearity performance. With a fast power-down pin, TRF37T05 can be used to reduce power dissipation in TDD
application while maintaining optimized adjusted carrier feed-through performance. TRF37T05 is available in an
REG-24 VQFN package.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 Gain Control Feature
TRF37T05 has a specific GC pin which is used for gain control. The GC pin is gain control digital input which is
internally pulled down. When driving low or left open, modulator is in low gain mode. With driving high externally,
the modulator is in high gain mode. This 1 bit gain step control feature offers a typical 3-dB gain increase in high
gain mode. If power optimization is desired, driving this pin low can easily put the modulator into low gain mode.
7.4 Device Functional Modes
7.4.1 Power Down Mode
TRF37T05 features a PD pin to power down the modulator. The PD pin is internally pulled down. When the
power-down digital input pin is driven high, the RF output buffer is off. This feature provides a fast power-down
which can be used to reduce power dissipation in time division duplexing applications while maintaining
optimized adjusted carrier feed-through performance.
22 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TRF37T05
PD
GND
LOP
LOM
GND
GC
VCC
GND
RFOUT
GND
GND
GND
Thermal Pad
VCC
GND
GND
GND
BBIM
BBQM
BBIP
BBQP
GND
GND
GND
GND
1
2
3
4
5
6
7
8
9
10
11
12
18
17
16
15
14
13
24
23
22
21
20
19
6.8 pF
0.2 pF
RF
Output
LO
Input
BBI
BBQ
49.9 W
49.9 W49.9 W
49.9 W49.9 W
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
TRF37T05 is a quadrature modulator for up-converting the in-phase (I) and the quadrature-phase (Q) signals to
radio frequency (RF) in the transmit chain. Typically, the device is used between the digital-to-analog converter
(DAC) and the RF power amplifier.
8.2 Typical Application
(1) Pin 1 (PD) and Pin 6 (GC) are internally pulled down.
Figure 65. Typical Application Circuit
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 23
Product Folder Links: TRF37T05
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
Typical Application (continued)
8.2.1 Design Requirements
For this design example, use the parameters shown in Table 1.
Table 1. Pin Termination Requirements and Limitations
NAME PIN NO DESCRIPTION
Base-band in-quadrature input: negative terminal. Input impedance is 8 KΩ//4.6 pF. Optimal linearity is
BBQM 9 obtained if VCM is 0.25 V. Normally terminated in 50 Ω
Base-band in-quadrature input: positive terminal. Input impedance is 8 KΩ//4.6 pF. Optimal linearity is
BBQP 10 obtained if VCM is 0.25 V. Normally terminated in 50 Ω
Local oscillator input: positive terminal. This is preferred port when driving single ended. Normally AC
LOP 3 coupled and terminated in 50 Ω
Local oscillator input: negative terminal. When driving LO single-ended, normally AC coupled and
LOM 4 terminated in 50 Ω.
RFOUT 16 RF output. Normally using optimal matching circuits to match RF output to 50 Ω. Normally AC coupled.
Gain control digital input. Internally pulled down. When driving high, get 3 dB gain increase of RF
GC 6 output.
PD 1 Power down digital input. Internally pulled down. When driving high, the modulator is off.
3.3-V power supply. Can be tied together and source from a single clean supply. Each pin should be
VCC 18,24 properly RF bypassed and decoupled.
8.2.2 Detailed Design Procedure
8.2.2.1 Baseband Inputs
The baseband inputs consist of the in-phase signal (I) and the Quadrature-phase signal (Q). The I and Q lines
are differential lines that are driven in quadrature. The nominal drive level is 1-VPP differential on each branch.
The baseband lines are nominally biased at 0.25-V common-mode voltage (VCM); however, the device can
operate with a VCM in the range of 0 V to 0.5 V. The baseband input lines are normally terminated in 50 Ω,
though it is possible to modify this value if necessary to match to an external filter load impedance requirement.
8.2.2.2 LO Input
The LO inputs can be driven either single-ended or differentially. There is no significant performance difference
between either option with the exception of the sideband suppression. If driven single-ended, either input can be
used, but LOP (pin 3) is recommended for best broadband performance of sideband suppression. When driving
in single-ended configuration, simply ac-couple the unused port and terminate in 50 Ω. The comparison of the
sideband suppression performance is shown in Figure 71 for driving the LO single-ended from either pin and for
driving the LO input differentially.
8.2.2.3 RF Output
The RF output must be ac-coupled and can drive a 50-Ωload. The suggested output match provides the best
broadband performance across the frequency range of the device. It is possible to modify the output match to
optimize performance within a selected band if needed. The optimized matching circuits are to match the RF
output impedances to 50 Ω.
Figure 72 shows a slightly better OIP3 performance at the frequency above 1850 MHz with an 0.2-pF matching
capacitor.
24 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TRF37T05
PD
GND
LOP
LOM
GND
GC
VCC
GND
RFOUT
GND
GND
GND
1
2
3
4
5
6
18
17
16
15
14
13
39 pF
18 pF2.2 pF
RF
Output
LO
Input
49.9 W
180 pF 40 nH
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
8.2.2.4 350-MHz Operation
A different matching circuit, as shown in Figure 66, could also be applied to improve the performance for the
frequency from 300 MHz to 400 MHz.
Figure 66. Matching Components for Operation Centered at 350 MHz
Figure 73 and Figure 74 show a slight improvement in OIP3 performance at frequencies above 1850 MHz with
an 0.2-pF matching capacitor.
8.2.2.5 DAC to Modulator Interface Network
For optimum linearity and dynamic range, a digital-to-analog converter (DAC) can interface directly with the
TRF37T05 modulator. It is imperative that the common-mode voltage of the DAC and the modulator baseband
inputs be properly maintained. With the proper interface network, the common-mode voltage of the DAC can be
translated to the proper common-mode voltage of the modulator. The TRF37T05 common-mode voltage is
typically 0.25 V, and is ideally suited to interface with the DAC3482/3484 (DAC348x) family because the
common-mode voltages of both devices are the same; there is no translation network required. The interface
network is shown in Figure 67.
Figure 67. DAC348x Interface with the TRF37T05 Modulator
The DAC348x requires a load resistor of 25 Ωper branch to maintain its optimum voltage swing of 1-VPP
differential with a 20-mA max current setting. The load of the DAC is separated into two parallel 50-Ωresistors
placed on the input and output side of the low-pass filter. This configuration provides the proper resistive load to
the DAC while also providing a convenient 50-Ωsource and load termination for the filter.
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 25
Product Folder Links: TRF37T05
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
8.2.2.6 DAC348x with TRF37T05 Modulator Performance
The combination of the DAC348x driving the TRF37T05 modulator yields excellent system parameters suitable
for high-performance applications. As an example, the following sections illustrate the typical modulated adjacent
channel power ratio (ACPR) for common telecom standards and bands. These measurements were taken on the
DAC348x evaluation board.
8.2.2.6.1 WCDMA
The adjacent channel power ratio (ACPR) performance using a single-carrier WCDMA signal in the UMTS band
is shown in Figure 68.
Figure 68. Single-Carrier WCDMA ACPR, IF = 30 MHz, LO Frequency = 2110 MHz
A marginal improvement in OIP3 and output noise performance can be observed by increasing the LO drive
power, resulting in slightly improved ACPR performance. The ACPR performance versus LO drive level is plotted
in Figure 75 across common frequencies to illustrate the amount of improvement that is possible.
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Product Folder Links: TRF37T05
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
8.2.2.6.2 LTE
ACPR performance using a 10 MHz LTE signal in the 700-MHz band is shown in Figure 69.
Figure 69. 10 MHz LTE ACPR, IF = 30 MHz, LO Frequency = 718 MHz
8.2.2.6.3 MC-GSM
ACPR performance using a four-carrier MC-GSM signal in the 1800-MHz band is shown in Figure 70.
Figure 70. Four-Carrier MC-GSM, IF = 30 MHz ACPR, LO Frequency = 1812 MHz
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 27
Product Folder Links: TRF37T05
−81
−80
−79
−78
−77
−76
−75
−5 0 5 10 15
LO Power (dBm)
Adjacent Channel Power ratio (dBc)
748 MHz
942.5 MHz
1960 MHz
2140 MHz
2600 MHz
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
G071
−10
−8
−6
−4
−2
0
2
4
200 250 300 350 400 450 500
Frequency (MHz)
Output Power (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
G069
10
15
20
25
30
35
40
200 250 300 350 400 450 500
Frequency (MHz)
OIP3 (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
G070
−60
−50
−40
−30
−20
−10
0
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
Unadjusted SBS (dB)
LOP_SE
LOM_SE
LO_Diff
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
G067
10
12
14
16
18
20
22
24
26
28
30
32
34
0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
OIP3 (dBm)
With 0.2 pF cap
Without 0.2 pF cap
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
G068
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
8.2.3 Application Curves
Figure 71. Unadjusted Sideband Suppression (SBS) vs LO Figure 72. OIP3 with and without a Shunt 0.2-pF Matching
Drive Options Capacitor at the RF Port
Figure 73. Output Power with 350-MHz Matching Circuit Figure 74. OIP3 with 350-MHz Matching Circuit
Figure 75. Single-Carrier WCDMA ACPR Performance vs LO Power
28 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TRF37T05
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
9 Power Supply Recommendations
The TRF37T05 is powered by supplying a nominal 3.3 V to pins 18 and 24. These supplies can be tied together
and sourced from a single clean supply. Proper RF bypassing should be placed close to each power supply pin.
Ground pin connections should have at least one ground via close to each ground pin to minimize ground
inductance. The PowerPAD™ must be tied to ground, preferably with the recommended ground via pattern to
provide a good thermal conduction path to the alternate side of the board and to provide a good RF ground for
the device. (Refer to Layout Guidelines for additional information.)
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 29
Product Folder Links: TRF37T05
2,45
1,16
2,45
Æ0,254
1,16
0,508
0,508
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
10 Layout
Populated RoHS-compliant evaluation boards are available for testing the TRF37T05 as a stand-alone device.
Contact your local TI representative for information on ordering these evaluation modules, or see the TRF37T05
product folder on the TI website. In addition, the TRF37T05 can be evaluated with the DAC348x (quad/dual 16-
bit, 1.25GSPS) EVM driving the baseband inputs through a seamless interface at 0.25V common-mode voltage.
10.1 Layout Guidelines
The TRF37T05 device is fitted with a ground slug on the back of the package that must be soldered to the
printed circuit board (PCB) ground with adequate ground vias to ensure a good thermal and electrical
connection. The recommended via pattern and ground pad dimensions are shown in Figure 76. The
recommended via diameter is 10 mils (0.10 in or 0,25 mm). The ground pins of the device can be directly tied to
the ground slug pad for a low-inductance path to ground. Additional ground vias may be added if space allows.
Decoupling capacitors at each of the supply pins are strongly recommended. The value of these capacitors
should be chosen to provide a low-impedance RF path to ground at the frequency of operation. Typically, the
value of these capacitors is approximately 10 pF or lower.
The device exhibits symmetry with respect to the quadrature input paths. It is recommended that the PCB layout
maintain this symmetry in order to ensure that the quadrature balance of the device is not impaired. The I/Q input
traces should be routed as differential pairs and the respective lengths all kept equal to each other. On the RF
traces, maintain proper trace widths to keep the characteristic impedance of the RF traces at a nominal 50 Ω.
10.2 Layout Example
Note: Dimensions are in millimeters (mm).
Figure 76. PCB Ground Via Layout Guide
30 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TRF37T05
TRF37T05
www.ti.com
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
11 Device and Documentation Support
11.1 Device Support
11.1.1 Definition of Specifications
11.1.1.1 Carrier Feedthrough
This specification measures the power of the local oscillator component that is present at the output spectrum of
the modulator. The performance depends on the dc offset balance within the baseband input lines. Ideally, if all
of the baseband lines were perfectly matched, the carrier (that is, the LO) would be naturally suppressed;
however, small dc offset imbalances within the device allow some of the LO component to feed through to the
output. This parameter is expressed as an absolute power in dBm, and is independent of the RF output power
and the injected LO input power.
It is possible to adjust the baseband dc offset balance to suppress the output carrier component. Devices such
as the DAC348x DAC family have dc offset adjustment capabilities specifically for this function. The Adjusted
Carrier Feedthrough graphs (see Figure 33 through Figure 38) optimize the performance at the center of the
band at room temperature. Then, with the adjusted dc offset values held constant, the parameter is measured
over the frequency band and across the temperature extremes. The typical performance plots provide an
indication of how well the adjusted carrier suppression can be maintained over frequency and temperature with
only one calibration point.
11.1.1.2 Sideband Suppression
This specification measures the suppression of the undesired sideband at the output of the modulator relative to
the desired sideband. If the amplitude and phase within the I and Q branch of the modulator were perfectly
matched, the undesired sideband (or image) would be naturally suppressed. Amplitude and phase imbalance in
the I and Q branches result in the increase of the undesired sideband. This parameter is measured in dBc
relative to the desired sideband.
It is possible to adjust the relative amplitude and phase balance within the baseband lines to suppress the
unwanted sideband. Devices such as the DAC348x DAC family have amplitude and phase adjustment control
specifically for this function. The Adjusted Sideband Suppression graphs (refer to Figure 39 through Figure 44)
optimize the performance at the center of the band at room temperature. Then, with the adjusted amplitude and
phase values held constant, the parameter is measured over the frequency band and across the temperature
extremes. The performance plots provide an indication of how well the adjusted sideband suppression can be
maintained over frequency and temperature with only one calibration point.
11.1.1.3 Output Noise
The output noise specifies the absolute noise power density that is output from the RFOUT pin (pin 16). This
parameter is expressed in dBm/Hz. This parameter, in conjunction with the OIP3 specification, indicates the
dynamic range of the device. In general, at high output signal levels the performance is limited by the linearity of
the device; at low output levels, on the other hand, the performance is limited by noise. As a result of the higher
gain and output power of the TRF3705 compared to earlier devices, it is expected that the noise density is
slightly higher as well. With its increased gain and high OIP3 performance, the overall dynamic range of the
TRF3705 is maintained at exceptional levels.
11.1.1.4 Definition of Terms
A simulated output spectrum with two tones is shown in Figure 77, with definitions of various terms used in this
data sheet.
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 31
Product Folder Links: TRF37T05
F1 = FBB1 + LO
F2 = FBB2 + LO
F3rdL = 2F1-F2
F3rdH = 2F2-F1
F2ndL = (FBB2 -FBB1)+LO
F2ndH = (FBB2 + FBB1)+LO
LO
LSB1 = LO - FBB1
LSB2= LO – FBB2
FBBn = Baseband Frequency
Fn = RF Frequency
F3rdH/L = 3rd Order Intermodulation Product Frequency (High Side / Low Side)
F2ndH/L = 2nd Order Intermodulation Product Frequency (High Side / Low Side)
LO = Local Oscillator Frequency
LSBn = Lower Sideband Frequency
Desired Signal
Unwanted Sideband
3rd Order IM
2nd Order IM
f
TRF37T05
SLWS239A –JUNE 2013–REVISED NOVEMBER 2015
www.ti.com
Device Support (continued)
Figure 77. Graphical Illustration of Common Terms
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
32 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TRF37T05
PACKAGE OPTION ADDENDUM
www.ti.com 3-Nov-2015
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TRF37T05IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TR37T05
IRGE
TRF37T05IRGET ACTIVE VQFN RGE 24 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TR37T05
IRGE
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
PACKAGE OPTION ADDENDUM
www.ti.com 3-Nov-2015
Addendum-Page 2
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TRF37T05IRGER VQFN RGE 24 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2
TRF37T05IRGET VQFN RGE 24 250 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2
PACKAGE MATERIALS INFORMATION
www.ti.com 13-Jul-2017
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TRF37T05IRGER VQFN RGE 24 3000 367.0 367.0 38.0
TRF37T05IRGET VQFN RGE 24 250 367.0 367.0 38.0
PACKAGE MATERIALS INFORMATION
www.ti.com 13-Jul-2017
Pack Materials-Page 2
GENERIC PACKAGE VIEW
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
RGE 24 VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
4204104/H
www.ti.com
PACKAGE OUTLINE
C
SEE TERMINAL
DETAIL
24X 0.3
0.2
2.45 0.1
24X 0.5
0.3
1 MAX
(0.2) TYP
0.05
0.00
20X 0.5
2X
2.5
2X 2.5
A4.1
3.9 B
4.1
3.9 0.3
0.2
0.5
0.3
VQFN - 1 mm max heightRGE0024B
PLASTIC QUAD FLATPACK - NO LEAD
4219013/A 05/2017
PIN 1 INDEX AREA
0.08 C
SEATING PLANE
1
613
18
7 12
24 19
(OPTIONAL)
PIN 1 ID 0.1 C A B
0.05
EXPOSED
THERMAL PAD
25 SYMM
SYMM
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
SCALE 3.000
DETAIL
OPTIONAL TERMINAL
TYPICAL
www.ti.com
EXAMPLE BOARD LAYOUT
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
24X (0.25)
24X (0.6)
( 0.2) TYP
VIA
20X (0.5)
(3.8)
(3.8)
( 2.45)
(R0.05)
TYP
(0.975) TYP
VQFN - 1 mm max heightRGE0024B
PLASTIC QUAD FLATPACK - NO LEAD
4219013/A 05/2017
SYMM
1
6
712
13
18
19
24
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
25
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED
METAL
METAL
SOLDER MASK
OPENING
SOLDER MASK DETAILS
NON SOLDER MASK
DEFINED
(PREFERRED)
EXPOSED
METAL
www.ti.com
EXAMPLE STENCIL DESIGN
24X (0.6)
24X (0.25)
20X (0.5)
(3.8)
(3.8)
4X ( 1.08)
(0.64)
TYP
(0.64) TYP
(R0.05) TYP
VQFN - 1 mm max heightRGE0024B
PLASTIC QUAD FLATPACK - NO LEAD
4219013/A 05/2017
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
25
SYMM
METAL
TYP
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 25
78% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:20X
SYMM
1
6
712
13
18
19
24
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