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MRF9085LR3 MRF9085LSR3
4-1
Freescale Semiconductor
RF Product Device Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large-signal, common - source amplifier
applications in 26 volt base station equipment.
•Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: -45.0 dBc @ 30 kHz BW
1.98 MHz: -60.0 dBc @ 30 kHz BW
•Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
Features
•Internally Matched for Ease of Use
•High Gain, High Efficiency and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate- Source Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD250
1.43
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 0.7 °C/W
Document Number: MRF9085
Rev. 11, 5/2006
Freescale Semiconductor
Technical Data
MRF9085LR3
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N- CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI- 780
MRF9085LR3
CASE 465A- 06, STYLE 1
NI- 780S
MRF9085LSR3
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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4-2
Freescale Semiconductor
RF Product Device Data
MRF9085LR3 MRF9085LSR3
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model MRF9085LR3
MRF9085LSR3
M2 (Minimum)
M1 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th) 2.0 — 4.0 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q) — 3.7 — Vdc
Drain- Source On- Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on) — 0.19 0.4 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs — 8.0 — S
Dynamic Characteristics (1)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 73 — pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.9 — pF
1. Part is internally input matched. (continued)
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MRF9085LR3 MRF9085LSR3
4-3
Freescale Semiconductor
RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two -Tone Common- Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps 17 17.9 — dB
Two -Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η36 40 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL — -21 -9 dB
Two -Tone Common- Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Gps — 17.9 — dB
Two -Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
η— 40.0 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IMD — -31 — dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IRL — -16 — dB
Power Output, 1 dB Compression Point, CW
(VDD = 26 Vdc, IDQ = 700 mA,
f1 = 880.0 MHz)
P1dB — 105 — W
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
Gps — 17.5 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
η— 51 — %
Power Output, 1 dB Compression Point, CW (1)
(VDD = 26 Vdc, IDQ = 700 mA,
f1 = 960 MHz)
P1dB — 105 — W
1. These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2.
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4-4
Freescale Semiconductor
RF Product Device Data
MRF9085LR3 MRF9085LSR3
Figure 1. 865-895 MHz Broadband Test Circuit Schematic
RF
INPUT
RF
OUTPU
T
Z1 Z2
VGG
C1
C15
B1
+
Z3 Z4
DUT
VDD
C19
B3
C16
+
L2
Z11 Z12 Z16
B1, B2, B3 Short Ferrite Beads, Surface Mount
C1, C9, C15, C16 47 pF Chip Capacitors, ATC
C3 5.6 pF Chip Capacitor, ATC
C4, C13 0.8 - 8.0 Variable Capacitors, Gigatrim
C5, C6, C12 8.2 pF Chip Capacitors, ATC
C7, C17, C18, C19 10 mF, 35 V Tantalum Surface Mount Capacitors, Kemet
C8 20 K pF Chip Capacitor, ATC
C10, C11 16 pF Chip Capacitors, ATC
C14 0.6 - 4.5 Variable Capacitor, Gigatrim
L1 7.15 nH Inductor, Coilcraft
L2 17.5 nH Inductor, Coilcraft
N1, N2 N- Type Panel Mount, Stripline, M/A - Com
WB1, WB2 5 Mil BeCu Shim (0.225 x 0.525)
Z1 0.219″ x 0.080″ Microstrip
Z2 0.150″ x 0.080″ Microstrip
Z3 0.851″ x 0.080″ Microstrip
Z4 0.125″ x 0.220″ Microstrip
Z5 0.123″ x 0.220″ Microstrip
Z6 0.076″ x 0.220″ Microstrip
Z7 0.261″ x 0.220″ Microstrip
Z8 0.220″ x 0.630″ x 0.200″ Taper
Z9 0.240″ x 0.630″ Microstrip
Z10 0.060″ x 0.630″ Microstrip
Z11 0.067″ x 0.630″ Microstrip
Z12 0.233″ x 0.630″ Microstrip
Z13 0.630″ x 0.220″ x 0.200″ Taper
Z14 0.200″ x 0.220″ Microstrip
Z15 0.055″ x 0.220″ Microstrip
Z16 0.088″ x 0.220″ Microstrip
Z17 0.226″ x 0.220″ Microstrip
Z18 0.868″ x 0.080″ Microstrip
Z19 0.129″ x 0.080″ Microstrip
Z20 0.223″ x 0.080″ Microstrip
PCB Arlon GX- 0300-55- 22, 30 mils
εr = 2.55
C11
Z17 Z20
Z7
C8 C9
L1
C6
C5
C10
C17
C13
Z10
C7 C18
B2
C3C4
Z5 Z6 Z9
Z18 Z19
C14
Z13
Z8
Z14
C12
Z15
++++
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MRF9085LR3 MRF9085LSR3
4-5
Freescale Semiconductor
RF Product Device Data
Figure 2. 865-895 MHz Broadband Test Circuit Component Layout
C1
C4
C3
C5
C7
C9
L1
B2
C8
B1
C12
C13
C14
C10
C6
C15
VGG
VDD
B3 C17 C19
C18
WB1
C16
L2
C11
WB2
CUTOUT
MRF9085
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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4-6
Freescale Semiconductor
RF Product Device Data
MRF9085LR3 MRF9085LSR3
TYPICAL CHARACTERISTICS
−80
−40
−60
−20
20
0
40
IMD
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
860
18
Figure 3. Class AB Broadband Circuit Performance
14
11
Pout, OUTPUT POWER (WATTS) PEP
19
7
Figure 4. Power Gain, Efficiency, IMD versus
Output Power
1
9
1
−70
Figure 5. Intermodulation Distortion Products
versus Output Power
10010
−10
−30
−60
−50
−40
11
13
15
13
12
VDD = 26 Vdc
Pout = 90 W (PEP)
IDQ = 700 mA
Two−Tone, 100 kHz Tone Spacing
865
17
15
17
10 100
16
870 875 880 885 890 895 900
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) CW AVG.
Gps, POWER GAIN (dB)
18
12
Figure 6. Power Gain, Efficiency versus Output
Power
1
13
10
7
Figure 7. Power Gain, Efficiency, ACPR versus
Output Power
1
19
15
11
9
13
17
14
15
16
17
10 100
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)h
IMD, INTERMODULATION DISTORTION (dBc)
−20
60
50
40
30
20
10
0
, DRAIN EFFICIENCY (%)h
, DRAIN EFFICIENCY (%) & ACPR (dB)h
−36
−34
−32
−30
−28
35
40
45
50
1.00
1.25
1.50
1.75
2.00
, DRAINh
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
VSWR
Gps
h
VSWR
−40
−60
−20
20
0
40
60
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 26 Vdc
IDQ = 700 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
Gps
h
IMD
VDD = 26 Vdc
IDQ = 700 mA
f1 = 800.0 MHz
f2 = 800.1 MHz
3rd Order
5th Order
7th Order
Gps
h
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
Single Tone
Gps
h
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
750 kHz
1.98 MHz
Gps, POWER GAIN (dB)
19
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MRF9085LR3 MRF9085LSR3
4-7
Freescale Semiconductor
RF Product Device Data
Figure 8. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
865
880
895
1.35 - j1.92
1.28 - j1.30
1.33 - j1.66
1.26 - j0.15
1.26 - j0.10
1.21 - j0.20
VDD = 26 V, IDQ = 700 mA, Pout = 90 W PEP
f = 865 MHz
Zo = 2 Ω
f = 865 MHz
Note: Zload was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Zsource
Zload
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
f = 895 MHz
f = 895 MHz
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4-8
Freescale Semiconductor
RF Product Device Data
MRF9085LR3 MRF9085LSR3
NOTES
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MRF9085LR3 MRF9085LSR3
4-9
Freescale Semiconductor
RF Product Device Data
NOTES
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4-10
Freescale Semiconductor
RF Product Device Data
MRF9085LR3 MRF9085LSR3
NOTES
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MRF9085LR3 MRF9085LSR3
4-11
Freescale Semiconductor
RF Product Device Data
PACKAGE DIMENSIONS
MRF9085LR3
NI-780
CASE 465- 06
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
MRF9085LSR3
NI-780S
CASE 465A- 06
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.805 0.815 20.45 20.70
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
M0.774 0.786 19.61 20.02
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S0.365 0.375 9.27 9.52
N0.772 0.788 19.61 20.02
U−−− 0.040 −−− 1.02
Z−−− 0.030 −−− 0.76
M
A
M
bbb B M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
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4-12
Freescale Semiconductor
RF Product Device Data
MRF9085LR3 MRF9085LSR3
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Document Number: MRF9085
Rev. 11, 5/2006
