2SA1759 Transistor, PNP Features Dimensions (Units : mm) * available in MPT3 (MPT, SC-62) package * package marking: 2SA1759; AHx, where * is hpe code 2SA1759 (MPT3) +0.2 4.594 +0.2 1.6201 1504 22 } 09 0.5201 . e high breakdown voltage, $3) $7 Tt fl #20 VoeEo = 400 V g| a | aie + A low collector saturation voltage 1 il] 0.40.05 ey 420.1|l0.6+0.1|Il 0.4 20. ola! Veysary < ~0.5 V at 15201 perorflocsas Tee ot 1.0 +0.3 Ic/Ip = -20 mA/ -2 MA go202 | . ao: (1) Base * high switching speed, t; = 1.0 us (2) Collector (typical) at Ie =-100 mA (3) Emitter wide safe operating area (SOA) Applications high voltage switching (strobe flash, power supply switching for telephones) Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Vcpo 400 V Collector-to-emitter voltage Vceo ~400 V Emitter-to-base voltage VeBo -7 Vv -100 DC Collector current Ic mA : -200 Single pulse, Pw = 100 ms 0.5 Collector dissipation P WwW P c 2.0 Mounted on 40 x 40 x 0.7 mm ceramic PCB Junction temperature T; 150 C Storage temperature Tstg -55 ~ +150 C Surface Mount Transistors ROM 85 2SA1759 Transistor, PNP, 2SA series Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol; Min |Typical; Max Unit Conditions Collector-to-base _ breakdown voltage BVcgo | 400 V {lc =-50 HA Collector-to-emitter _ breakdown voltage BVceo | 400 V|lc=-1 mA Emitter-to-base _ breakdown voltage BVepo | -7 Vi |le=-50 HA Collector cutoff current lcBo ~10 HA |Veg = 400 V Emitter cutoff current lego -10 WA |Veg=-6V DC current gain hee 56 120 270 Voge = -10 V, Io =-10 mA Collector-to-emitter _ saturation voltage VcE(sat) ~0.5 V_|le/Ip = -20 mA/~2 mA Base-to-emitter saturation voltage VBE(sat) -1.2 Vv Io/lp =-20 mA/-2 mA Transition frequency ff 12 MHz [Voce =~-10 V, Ie = 10 mA, f= 5 MHz Output capacitance Cob 13 pF |Vcpg =-10 V, Ie =0 mA, f= 1 MHz Turn on time ton 0.7 ps Ie =-100 mA, R, = 1.5 kQ, Storage time Tstg 1.8 pS py =Ipp = 10 MA, Vog = 150 V Fall time te 1.0 ys hee rankings item N P Q hee 56 ~ 120 82 ~ 180 120 ~ 270 Test circuits Figure 1 Switching time test circuit Figure 2 Switching time waveforms Base | lee current 7 waveform ler Vw = Veco -- 150V Collector current waveform RL= 1.5k0 Pw 50ys Transistor | duly cycle = 1% + Vas under Fest 86 RONM Surface Mount Transistors Transistor, PNP, 2SA series 2SA1759 Electrical characteristic curves 20 Mounted on a S 40 x 40x 0.7 mm = \ ceramic PCB 3 LS a z 9 F & 1.0 g \ Q 5 \ a = 05 2: | Unmounted 0 0 50 100 150 200 AMBIENT TEMPERATURE : Ta (C) Figure 3 100000 5 g TRANSIENT THERMAL RESISTANCE : Rm (C/W) 0.001 0.01 t 8 + 2 | Ic (mA) t | 3 8 { COLLECTOR CURRENT : \ f oO 0 10 oC CUT TT 0.1 1 10 Cn ii A a a) PULSE WIDTH : Pw (s) Figure 5 & f 20 30 Figure 7 IB= -0.1mA 40 50 COLLECTOR To EMITTER VOLTAGE : Vee (V) Io (mA) COLLECTOR CURRENT : Io (mA) COLLECTOR CURRENT : lc (mA) COLLECTOR CURRENT : 100 lo max. (Pulse * Ta=25C Mounted on 40 X 40 X 0.?mm ceramic PCB * Single nonrepetitive pulse -1 -10 -100 1000 COLLECTOR TO EMITTER VOLTAGE : Vcr (V) Figure 4 ~ 100 | Ta=28C 3.5m 4mA g0 45mA 5mA he ann 80 _ a os | C i aig a is Tea 40 Jp ae | 20 Oo | | _L. Ip= 0 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : Voce (V) Figure 6 Voce = 5V 1 0 02 O04 08 10 12014 BASE TO EMITTER VOLTAGE : Vez (V) Figure 8 Surface Mount Transistors 87 2SA1759 Transistor, PNP, 2SA series 1000 1000 E E z Z 100 3 3 5 B i ud c c fc x 5 7 BS 49 2 10 QO 8 a 1 1 05 1 10 100-200 -O05 -1 10 - 100 ~ COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : te (mA) Figure 9 Figure 10 > 710 710 Ic/la= 10 ~ 2 i is g ss ' why E z+ 4 Sy > 3S = z 3 Ss & -o1 2B o1 Vor (eat) 2 as 3 Se a ge S a =< xl es 33 4 001 001 2 -05 ~1 10 100- 200 05 1 10 100 200 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : Ic (mA) Figure 11 Figure 12 1.000 3 g z 3 & us 3. 100 2 2 5 5 a o < w oO a 5 z 10 & eg z 3 Q [val F 4 8 o5 1 10 100200 - 0.1 =1 - 10 -BO EMITTER CURRENT : le (mA) COLLECTOR TO BASE VOLTAGE : Vos (V) Figure 13 Figure 14 88 ROM Surface Mount Transistors