DISCRETE POWER AND SIGNAL
TECHNOLOGIES
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Sym Parameter Value Units
Tstg Storage Temperature -55 to +150 OC
TJOperating Junction Temperature -55 to +150 OC
PDTotal Power Dissipation at TA = 25OC 350 W
Linear Derating Factor from TA = 25OC 2.8 mW/OC
ROJA Thermal Resistance Junction-to-Ambient 357 OC/W
Wiv Working Inverse Voltage 75 V
IOAverage Rectified Current 200 mA
IFDC Forward Current (IF) 600 mA
ifRecurrent Peak Forward Current (IF) 700 mA
iF(surge) Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second 1.0 Amp
Pulse Width = 1.0 microsecond 2.0 Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
MMBD4448
Electrical Characteristics TA = 25OC unless otherwise noted
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVBreakdown Voltage 100 VIR=100 uA
75 VIR= 5.0 uA
IRReverse Leakage 25 nA VR= 20 V
50 uA VR= 20 V TA = 150 Deg C
5.0 uA VR= 75 V
VFForward Voltage 620 720 mV IF= 5 mA
1.0 VIF=100 mA
CTCapacitance 2.0 pF VR= 0.0 V, f = 1.0 MHz
TRR Reverse Recovery Time 4.0 ns IF = 10 mA IR = 10 mA
IRR = 1.0 Ma, RL = 100 ohms
VFM Peak Forward Recovery Voltage 2.5 VIF =50 mA Pk Square Wave
High Conductance
Fast Diode
© 1997 Fairchild Semiconductor Corporation
Features:
•350 milliwatt Power Dissipation package.
•High Breakdown Voltage, Fast Switching Speed.
•Typical capacitance less than 1.5 picofarad.
Ordering:
• 7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.
General Description:
The high breakdown voltage, fast switching speed and high
forward conductance of this diode packaged in a SOT-23
Surface Mount package makes it desirable also as a general
purpose diode.
Top Mark: RAB
3
1 2
PACKAGE
TO-236AB (Low)
3
2 NC1
CONNECTION DIAGRAMS
Revision A; November 10, 1998
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
SOT-23
Diode (pinout)
TO-236AB (LOW PROFILE)
22-August-1994
0.098 (2.489)
0.083 (2.108) 0.055 (1.397)
0.047 (1.194)
0.024 (0.810)
0.018 (0.457)
3 CHARACTERS MAX
LOW PROFILE 0.0040 (0.102)
(49) 0.0005 (0.013)
0.120 (3.048)
0.110 (2.794)
0.040 (1.016)
0.035 (0.889) 0.080 (2.032)
0.070 (1.778)
0.019 (0.483)
0.015 (0.381)
0.0059 (0.150)
0.0035 (0.089)
2
3
1
LOW PROFILE 0.041 (1.041)
(49) 0.035 (0.889)
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
0.035” TYPICAL
(0.889) 0.060” +/- 0.005”
(1.524 +/- 0.127)
0.120” MINIMUM
(3.048)
0.030” +/- 0.005”
(0.762 +/- 0.127)
RECOMMENDED SOLDER PADS
FOR
SOT-23
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
0.037” +/- 0.005”
(0.950 +/- 0.127 )
0.099” +/- 0.005”
(2.524 +/- 0.127 )
0.039” +/- 0.005”
(1.000 +/- 0.127)
RECOMMENDED SOLDER PADS
FOR
U.S. & European SOT-23
&
Japanese SC-59
0.031” +/- 0.005”
(0.800 +/- 0.127)
0.060” +/- 0.005”
(1.524 +/- 0.127)
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
SyncFET™
TinyLogic™
UHC™
VCX™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Rev. D
