DG2003/2004/2005
Vishay Siliconix
New Product
Document Number: 71754
S-05298—Rev. B, 17-Dec-01 www.vishay.com
1
Low-Voltage Dual SPST Analog Switch
FEATURES
DLow Voltage Operation (1.8 V to 5.5 V)
DLow On-Resistance - rDS(on): 1.2 W
DFast Switching - 14 ns
DLow Charge Injection - QINJ: 1 pC
DLow Power Consumption
DTTL/CMOS Compatible
DMSOP-8 Package
BENEFITS
DReduced Power Consumption
DSimple Logic Interface
DHigh Accuracy
DReduce Board Space
APPLICATIONS
DCellular Phones
DCommunication Systems
DPortable Test Equipment
DBattery Operated Systems
DSample and Hold Circuits
DESCRIPTION
The DG2003/2004/2005 are dual single-pole/single-throw
monolithic CMOS analog switch designed for high
performance switching of analog signals. Combining low
power, fast switching, low on-resistance (rDS(on): 1.2 W) and
small physical size (MSOP-8), the DG2003/2004/2005 are
ideal for portable and battery powered applications requiring
high performance and efficient use of board space.
The DG2003/2004/2005 are built on Vishay Siliconix’s low
voltage JI2 process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NO1V+
COM1
DG2005
IN1
IN2COM2
GND NC2
1
2
3
4
8
7
6
5
Top View
NC1V+
COM1
DG2004
IN1
IN2COM2
GND NC2
1
2
3
4
8
7
6
5
Top View
NO1V+
COM1
DG2003
IN1
IN2COM2
GND NO2
1
2
3
4
8
7
6
5
Top View
TRUTH TABLE - DG2003 TRUTH TABLE - DG2004 TRUTH TABLE - DG2005
Logic NO Logic NC Logic NO1NC2
0 Off 0 On 0 Off On
1 On 1 Off 1 On Off
ORDERING INFORMATION
Temp Range Package Part Number
DG2003DQ
-40 to 85°C MSOP-8 DG2004DQ
DG2005DQ
DG2003/2004/2005
Vishay Siliconix New Product
www.vishay.com
2Document Number: 71754
S-05298Rev. B, 17-Dec-01
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ -0.3 to +6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NOa-0.3 to (V+ + 0.3 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal) "50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current "200 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) -65 to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)b
MSOP-8c320 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 25_C
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified Limits
40 to 85_C
Parameter Symbol V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 VeTempaMinbTypcMaxbUnit
Analog Switch
Analog Signal RangedVNO, VNC,
VCOM Full 0 V+ V
On-Resistance rON V+ = 2.0 V, VCOM = 1.0 V, INO, INC = 1 mA Room
Fulld7.0
12.5 10.0
16.0
W
rON FlatnessdrON
Flatness V+ = 2.0 V, VCOM = 0 to V+, INO, INC = 1 mA Room 5 W
INO(off),
INC(off) V+ = 2.2 V Room
Fulld500
4.0 500
4.0 pA
nA
Switch Off Leakage Currentf
ICOM(off)
V+ = 2.2 V
VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V Room
Fulld500
4.0 500
4.0 pA
nA
Channel-On Leakage Current fICOM(on) V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V Room
Fulld500
4.0 500
4.0 pA
nA
Digital Control
Input High Voltage VINH Full 1.6
Input Low Voltage VINL Full 0.4 V
Input CapacitancedCin Full 5 pF
Input Current IINL or IINH VIN = 0 or V+ Full 1 1 mA
Dynamic Characteristics
Turn-On T ime tON VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF Room
Fulld30 47
48
Turn-Off Time tOFF
VNO or VNC = 1.5 V, RL = 300
W
, CL = 35 pF
Figures 1 and 2 Room
Fulld22 37
48
ns
Charge InjectiondQINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 Room 2 pC
Off-IsolationdOIRR
W
Room 61
CrosstalkdXTALK RL = 50 W, CL = 5 pF, f = 1 MHz Room 67 dB
NO, NC Off CapacitancedCNO(off),
CNC(off) VIN = 0 or V+, f = 1 MHz Room 53 pF
Channel-On CapacitancedCON
VIN = 0 or V+, f = 1 MHz Room 110 pF
Power Supply
Power Supply Range V+ 1.8 2.2 V
Power Supply CurrentdI+ 0.02 1.0 mA
Power Consumption PCVIN = 0 or V+ 2.2 mW
DG2003/2004/2005
Vishay Siliconix
New Product
Document Number: 71754
S-05298Rev. B, 17-Dec-01 www.vishay.com
3
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified Limits
40 to 85_C
Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 VeTempaMinbTypcMaxbUnit
Analog Switch
Analog Signal RangedVNO, VNC,
VCOM Full 0 V+ V
On-Resistance rON V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA Room
Full 2.2
2.4 3.5
3.7
W
rON FlatnessdrON
Flatness V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room 0.5 W
INO(off),
INC(off) V+ = 3.3 V Room
Full 500
6.0 500
6.0 pA
nA
Switch Off Leakage Current f
ICOM(off)
V+ = 3.3 V
VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V Room
Full 500
6.0 500
6.0 pA
nA
Channel-On Leakage Current fICOM(on) V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Room
Full 500
6.0 500
6.0 pA
nA
Digital Control
Input High Voltage VINH Full 2
Input Low Voltage VINL Full 0.4 V
Input CapacitancedCin Full 5 pF
Input Current IINL or IINH VIN = 0 or V+ Full 1 1 mA
Dynamic Characteristics
Turn-On T imedtON VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF Room
Full 19 35
36
Turn-Off TimedtOFF
VNO or VNC = 2.0 V, RL = 300
W
, CL = 35 pF
Figure 1 and 2 Room
Full 17 31
34
ns
Charge InjectiondQINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 Room 1 pC
Off-IsolationdOIRR
W
Room 61
CrosstalkdXTALK RL = 50 W, CL = 5 pF, f = 1 MHz Room 67 dB
NO, NC Off CapacitancedCNO(off),
CNC(off) VIN = 0 or V+, f = 1 MHz Room 53 pF
Channel-On CapacitancedCON
VIN = 0 or V+, f = 1 MHz Room 110 pF
Power Supply
Power Supply Range V+ 2.7 3.3 V
Power Supply Current I+ 0.02 1.0 mA
Power Consumption PCVIN = 0 or V+ 3.3 mW
DG2003/2004/2005
Vishay Siliconix New Product
www.vishay.com
4Document Number: 71754
S-05298Rev. B, 17-Dec-01
SPECIFICATIONS (V+ = 5.0 V)
Test Conditions
Otherwise Unless Specified Limits
40 to 85_C
Parameter Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 VeTempaMinbTypcMaxbUnit
Analog Switch
Analog Signal RangedVNO, VNC,
VCOM Full 0 V+ V
On-Resistance rON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room
Full 1.2
1.6 2.5
2.7
W
rON FlatnessdrON
Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room 0.2 W
INO(off),
INC(off) V+ = 5.5 V Room
Full 1.0
8.0 1.0
8.0
Switch Off Leakage Current ICOM(off)
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V Room
Full 1.0
8.0 1.0
8.0 nA
Channel-On Leakage Current ICOM(on) V+ = 5.5 V, V+ = 5.5 V
VNO, VNC = VCOM = 1 V/4.5 V Room
Full 1.0
8.0 1.0
8.0
Digital Control
Input High Voltage VINH Full 2.4
Input Low Voltage VINL Full 0.8 V
Input Capacitance Cin Full 5 pF
Input Current IINL or IINH VIN = 0 or V+ Full 1 1 mA
Dynamic Characteristics
Turn-On T imedtON VNO or VNC = 3 V, RL = 300 W, CL = 35 pF Room
Full 13 28
31
Turn-Off TimedtOFF
VNO or VNC = 3 V, RL = 300
W
, CL = 35 pF
Figure 1 and 2 Room
Full 19 22
31
ns
Charge InjectiondQINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 Room 1 pC
Off-IsolationdOIRR
W
Room 61
CrosstalkdXTALK RL = 50 W, CL = 5 pF, f = 1 MHz Room 67 dB
Source-Off CapacitancedCNO(off),
CNC(off) VIN = 0 or V+, f = 1 MHz Room 51 pF
Channel-On CapacitancedCON
VIN = 0 or V+, f = 1 MHz Room 110 pF
Power Supply
Power Supply Range V+ 4.5 5.5 V
Power Supply Current I+ 0.02 1.0 mA
Power Consumption PCVIN = 0 or V+ 5.5 mW
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5-V leakage testing, not production tested.
DG2003/2004/2005
Vishay Siliconix
New Product
Document Number: 71754
S-05298Rev. B, 17-Dec-01 www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10 m
60 40 20 0 20 40 60 80 100
1000
1
100
60 40 20 0 20 40 60 80 100
Supply Current vs. Input Switching Frequency
Input Switching Frequency (Hz)
10 K 1 M 10 M100 K1 K10010
10
1
0.01
Supply Current vs. Temperature
Temperature (_C)
I+ Supply Current (nA) On-Resistance (
rON W)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
012345
0
1
2
3
4
5
6
7
8
012345
200
150
100
50
0
50
100
150
200
012345
Leakage Current vs. Temperature Leakage vs. Analog Voltage
VCOM, VNO, VNC Analog Voltage
rON vs. VCOM Supply Voltage
VCOM Analog Voltage (V)
V+ = 2 V/IS = 1 mA
V+ = 3 V/IS = 100 mA
V+ = 5 V/IS = 100 mA
rON vs. Analog Voltage and Temperature
On-Resistance (
rON W)
VCOM Analog Voltage (V)
V+ = 3 V
40_C
25_C
0_C
0.1
V+ = 5 V
VIN = 0 V
I+ Supply Current (A)
Leakage Current (pA)
Temperature (_C)
10000 V+ = 5 V
10
INO(off)/INC(off)
ICOM(on)
ICOM(off)
Leakage Current (pA)
V+ = 5 V
T = 25_C
INO(off)/INC(off)
ICOM(on)
ICOM(off)
1 n
1 m
100 m
10 m
1 m
10 n
100 n
85_C
DG2003/2004/2005
Vishay Siliconix New Product
www.vishay.com
6Document Number: 71754
S-05298Rev. B, 17-Dec-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
5
10
15
20
25
30
35
60 40 200 20406080100
tON V+ = 2 V
Switching Time vs. Temperature and Supply Voltage
Temperature (_C)
tON,tOFF Switching Time (ns)
tON V+ = 3 V tON V+ = 5 V
tOFF V+ = 2 V
tOFF V+ = 5 V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0123456
V+ Supply Voltage (V)
VT Switching Threshold (V)
Switching Threshold vs. Supply Voltage
20
15
10
5
0
5
10
15
20
0123456
VCOM Analog Voltage (v)
Q Charge Injection (pC)
Charge Injection vs. Analog Voltage
V+ = 3 V
V+ = 5 V
tOFFV+ = 3 V
V+ = 2 V
90
20
10
Loss, OIRR, X
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
Frequency (Hz)
10
0
10 M 1 G100 M1 M100 K
30
40
50
60
70
80
TALK (dB)
V+ = 3 V
RL = 50 W
LOSS
OIRR
XTALK
DG2003/2004/2005
Vishay Siliconix
New Product
Document Number: 71754
S-05298Rev. B, 17-Dec-01 www.vishay.com
7
TEST CIRCUITS
FIGURE 1. Switching Time
FIGURE 2. Charge Injection
Switch
Input
CL (includes fixture and stray capacitance)
V+
IN
NO or NC
CL
35 pF
COM
Logic
Input
RL
300 W
VOUT
GND
V+
50%
0 V
Logic
Input
Switch
Output
tON tOFF
Logic 1 = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
Off OnOn
IN
DVOUT
VOUT
Q = DVOUT x CL
CL = 1 nF
COM
Rgen VOUT
NC or NO
VIN = 0 V+
IN
Vgen
GND
V+
V+
Switch Output
VOUT +VCOM ǒRL
RL)RONǓ
0.9 x VOUT
tr t 5 ns
tf t 5 ns
IN depends on switch configuration: input polarity
determined by sense of switch.
+
VINH
VINL
FIGURE 3. Off-Isolation FIGURE 4. Channel Off/On Capacitance
NC or NO
f = 1 MHz
IN
COM
GND
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
10 nF
V+
V+
IN
GND
NC or NO
0V, 2.4 V
10 nF
COM
Off Isolation +20 log VCOM
VNOńNC
RL
Analyzer
V+
V+
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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