Preliminary Data Sheet 1 of 11 Rev. 01, 2008-06-15
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Description
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs
designed for EDGE and WCDMA power amplifier applications in the
1805 to 1880 MHz band. Features include input and output matching,
and thermally-enhanced open-cavity packages with copper flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA181001GL*
Package PG-63248-2
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1805 – 1880 MHz
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ
= 750 mA, ƒ = 1880 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46
Average Output Power (dBm)
IM3 (dBc), ACPR (dBc)
5
10
15
20
25
30
35
Drain Efficiency (%)
ACPR
Efficiency
IM3
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 45 W (AVG), ƒ = 1879.8 MHz
Characteristic Symbol Min Typ Max Unit
Error Vector Magnitude RMS EVM —1.8 —%
Modulation Spectrum @ 400 KHz ACPR —–61 —dBc
Modulation Spectrum @ 600 KHz ACPR —–73 —dBc
Gain Gps —16.5 —dB
Drain Efficiency ηD—36 —%
PTFA181001HL*
Package PG-64248-2
Features
•Thermally-enhanced, plastic open-cavity
(EPOC™) packages with copper flanges, Pb-free
and RoHS compliant
•Broadband internal matching
•Typical EDGE performance at 1879.8 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8%
•Typical CW performance, 1880 MHz, 28 V
- Output power at P–1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability
•Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
*See Infineon distributor for future availability.
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Preliminary Data Sheet 2 of 11 Rev. 01, 2008-06-15
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 100 W PEP, ƒ = 1850 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —16.5 —dB
Drain Efficiency ηD—41 —%
Intermodulation Distortion IMD —–30 —dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.085 —Ω
Operating Gate Voltage VDS = 28 V, ID = 750 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PDTBD W
Above 25°C derate by TBD W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 100 W CW) RθJC TBD °C/W
Ordering Information
Type and Version Package Type Package Description Shipping Marking
PTFA181001GL* V1 PG-63248-2 Thermally-enhanced, plastic Tray PTFA181001GL
open-cavity, slotted flange, single-ended
PTFA181001HL* V1 PG-64248-2 Thermally-enhanced, plastic Tray PTFA181001HL
open-cavity, earless flange, single-ended
*See Infineon distributor for future availability.
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Preliminary Data Sheet 3 of 11 Rev. 01, 2008-06-15
Edge EVM and Modulation Spectrum
vs. Quiescent Current
VDD = 28V, ƒ = 1879.8 MHz, POUT = 46.5 dBm
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0.65 0.70 0.75 0.80 0.85 0.90
Quiescent Current (A)
EVM RMS (average %) .
-90
-80
-70
-60
-50
-40
-30
-20
-10
Modulation Spectrum (dBc)
EVM
400 KHz
600 KHz
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 1879.8 MHz
-100
-90
-80
-70
-60
-50
-40
-30
-20
37 39 41 43 45 47 49
Output Power (dBm)
Modulation Spectrum (dB)
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
Efficiency
400 kHz
600 kHz
Typical Performance (data taken in a production test fixture)
EDGE EVM Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 1879.8 MHz
0
1
2
3
4
5
6
7
8
37 39 41 43 45 47 49
Output Power (dBm)
EVM RMS (average %) .
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
EVM
Efficiency
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 750 mA, ƒ1 =1879 MHz, ƒ2 = 1880 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
37 39 41 43 45 47 49
Output Power, Avg. (dBm)
IMD (dBc)
3rd Order
7th
5th
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Preliminary Data Sheet 4 of 11 Rev. 01, 2008-06-15
IM3 vs. Output Power at Selected Biases
VDD = 28 V, ƒ1 = 1879, ƒ2 = 1880 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
37 39 41 43 45 47 49
Output Power, Avg. (dBm)
IMD (dBc)
375 mA
1125 mA
750 mA
Broadband CW Performance
(at P-1dB)
VDD = 28 V, IDQ = 750 m
14
15
16
17
18
19
1805 1818 1831 1844 1857 1870 1883
Frequency (MHz)
Gain (dB)
35
40
45
50
55
60
Efficiency (%),
Output Power (dBm)
Output Power
Efficiency
Typical Performance (cont.)
CW Broadband Performance
VDD = 28 V, IDQ =750 mA, POUT = 47 dBm
20
25
30
35
40
45
50
55
1805 1818 1831 1844 1857 1870 1883
Frequency (MHz)
Gain (dB), Efficiency (%)
-30
-20
-10
0
10
20
30
40
Return Loss (dB)
Gain
Return Loss
Efficiency
Power Sweep
VDD = 28 V, ƒ = 1880 MHz
14.0
14.5
15.0
15.5
16.0
16.5
17.0
36 38 40 42 44 46 48 50 52
Output Power (dBm)
Power Gain (dB)
IDQ = 1125 mA
IDQ = 375 mA
IDQ = 750 mA
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Preliminary Data Sheet 5 of 11 Rev. 01, 2008-06-16
IS-95 CDMA Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
0
5
10
15
20
25
30
35
40
33 35 37 39 41 43 45 47
Output Power (dBm), Avg.
Drain Efficiency (%)
-80
-70
-60
-50
-40
-30
-20
-10
Adj. Ch. Power Ratio (dBc)
Efficiency
ACP FC – 0.75 MHz
ACPR FC + 1.98 MHz
TCASE = 25°C
TCASE = 90°C
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
12
13
14
15
16
17
18
36 38 40 42 44 46 48 50 52
Output Power (dBm)
Gain (dB)
5
15
25
35
45
55
65
Drain Efficiency (%)
Efficiency
Gain
Typical Performance (cont.)
Output Power (at 1 dB Compression)
vs. Supply Voltage
IDQ = 750 mA, ƒ =1880 MHz
49.5
50.0
50.5
51.0
51.5
52.0
24 26 28 30 32
Supply Voltage (V)
Output Power (dBm)
Preliminary Data Sheet 6 of 11 Rev. 01, 2008-06-16
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1805 4.62 –6.23 1.50 –3.87
1830 4.18 –6.10 1.51 –3.46
1850 4.20 –6.13 1.50 –3.16
1860 4.58 –6.20 1.49 –3.00
1880 4.42 –6.36 1.48 –2.62
See next page for reference circuit
Preliminary Data Sheet 7 of 11 Rev. 01, 2008-06-15
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic for ƒ = 1880 MHz
Circuit Assembly Information
DUT PTFA181001GL or PTFA181001HL LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 1880 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.314 λ, 50.0 Ω27.43 x 1.37 1.080 x 0.054
l20.172 λ, 38.0 Ω14.73 x 2.16 0.580 x 0.085
l30.016 λ, 11.4 Ω1.27 x 10.16 0.050 x 0.400
l40.024 λ, 60.0 Ω2.24 x 0.99 0.088 x 0.039
l50.218 λ, 60.0 Ω19.33 x 0.99 0.761 x 0.039
l60.019 λ, 6.9 Ω1.52 x 17.78 0.060 x 0.700
l70.044 λ, 6.9 Ω3.43 x 17.78 0.135 x 0.700
l8, l90.233 λ, 53.0 Ω20.45 x 1.24 0.805 x 0.049
l10 0.039 λ, 4.9 Ω3.10 x 25.65 0.122 x 1.010
l11 (taper) 0.037 λ, 4.9 Ω / 10.3 Ω2.92 x 25.65 / 11.43 0.115 x 1.010 / 0.450
l12 (taper) 0.033 λ, 10.3 Ω / 41.0 Ω2.79 x 11.43 / 1.91 0.110 x 0.450 / 0.075
l13 0.069 λ, 41.0 Ω6.35 x 1.91 0.250 x 0.075
l14 0.038 λ, 41.0 Ω3.25 x 1.91 0.128 x 0.075
l15 0.331 λ, 50.0 Ω28.98 x 1.37 1.141 x 0.054
1Electrical characteristics are rounded.
RF_IN
a181001ef_sch_06-04-18
RF_OUT
R3
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
C1
0.001µF
VDD
R5
10 V
R4
2K V
R1
1.2K V
C9
10pF
l1
R9
10 V
DUT
l5
C6
1µF
C5
0.1µF
C4
10µF
35V
C7
0.01µF
R8
2K V
C8
10pF
R7
5.1K V
C10
0.6pF
l2l3l6l7
l4
R6
5.1K V
C22
1.5pF
C21
1.5pF
C24
10pF
C23
0.6pF
l10 l11 l12 l13 l14
l8
l9
l15
VDD
L1
C11
1µF
C13
1µF
C12
10pF
C14
10µF
50V
C15
10µF
50V
C16
1µF
C18
1µF
C17
10pF
C19
10µF
50V
C20
10µF
50V
L2
Preliminary Data Sheet 8 of 11 Rev. 01, 2008-06-15
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Reference circuit assembly diagram* (not to scale)
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C11, C13, C16, C18 Capacitor, 1.0 µF ATC 920C105
C7 Capacitor, 0.01 µF ATC 200B 103
C8, C9, C12, C17, C24 Ceramic capacitor, 10 pF ATC 100B 100
C10, C23 Ceramic capacitor, 0.6 pF ATC 100B 0R6
C14, C15, C19, C20 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C21, C22 Ceramic capacitor, 1.5 pF ATC 100B 1R5
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infinion Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3, R8 Chip Resistor 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R9 Chip Resistor 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip Resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
*Gerber files for this circuit available on request
R4
Q1
QQ1
C3
C1
R2
C2
R1
R5
R3
C5
R8
C9
C10
R6
R7 C6
C4
R9
C8
C7
C16
C17
C18 C19 C20
C13 C14 C15
C11
C12
C24
C23
C21
C22
L2
L1
A181001_01
VDD
VDD
VDD
a181001ef_assy
a181001ef_dtl
R4
Q1
QQ1
C3
C1
R2
C2
R1
R5
R3
C5
R8
R6
R7 C6
C4
C8
C7
VDD
Preliminary Data Sheet 9 of 11 Rev. 01, 2008-06-15
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package PG-63248-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
4. Gold plating thickness: < 0.254 micron [< 10 microinch]
5. Tabs may protrude 0.13 [.005] max from body.
6. All tolerances: TBD.
7. Primary dimensions are mm. Alternate dimensions are inches.
C
L
4.83±0.51
[.190±.020] C
L
PG-68248-2-G_po_5-9-08
20.27
[.798]
34.04
[1.340]
3X R0.51+1.14
–0.25
3.63+0.25
–0.13
C
L
0.064 (.0025) –A–
[R.020 ]
+.045
–.010
45° X 2.72
[45° X .107]
45° X 1.78
[45° X .070]
5
2X R1.63
[R.064]
[.143 ]
+.010
–.005
Preliminary Data Sheet 10 of 11 Rev. 01, 2008-06-15
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package PG-63248-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
4. Gold plating thickness: < 0.254 micron [< 10 microinch]
5. All tolerances: TBD.
6. Tabs may protrude 0.13 [.005] max from body.
7. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
pg-69248-2(g)_po_5-19-08
Preliminary Data Sheet 11 of 11 Rev. 01, 2008-06-15
Preliminary PTFA181001GL/HL
Confidential, Limited Internal Distribution
Revision History: 2008-06-15 PreliminaryData Sheet
Previous Version: none
Page Subjects (major changes since last revision)
3-24-06 Updated Sales Tbl style for 2 lines. Update Imprint. Change default date/s.
4-10 to 14 Refine existing frames, new frames for final page. Misc updates.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-06-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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