PESD5V0L2UM,315 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2003 Aug 05 2005 May 23

DISCRETE SEMICONDUCTORS

PESDxL2UM series

Low capacitance double ESD

protection diode

M3D883

BOTTOM VIEW

2005 May 23 2

NXP Semiconductors Product data sheet

Low cap acitance double ESD protection

diode PESDxL2UM series

FEATURES

•Uni-directional ESD protection of two lines or

bi-direction al ESD protection of one line

•Reverse stand o ff voltage 3.3 and 5 V

•Low diode capacitance

•Ultra low leakage current

•Leadless ultra small SOT883 surface mount package

(1 × 0.6 × 0.5 mm)

•Board space 1.17 mm2 (approx. 10% of SOT23)

•ESD protection >15 kV

•IEC 61000-4-2; level 4 (ESD); 15 kV (air) or

8 kV (contact).

APPLICATIONS

•Cellular handsets and accessories

•Portable electronics

•Computers and pe ripherals

•Communication syste ms

•Audio and video equipment.

MARKING

DESCRIPTION

Low capacitance ESD protection diode in a three pad

SOT883 leadless ul tra small plastic packag e designed to

protect up to two transmission or data lines from

ElectroStatic Discharge (ESD) damage.

PINNING

TYPE NUMBER MARKING CODE

PESD3V3L2UM F2

PESD5V0L2UM F1

PIN DESCRIPTION

1cathode 1

2cathode 2

3common anode

MLE220

Bottom view

Top view 21

Fig.1 Simplified outline (SOT883) and symbol.

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NXP Semiconductors Pr oduct dat a shee t

Low capacitance double ESD protection

diode PESDxL2UM series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.

2. Pins 1 and 3 or 2 and 3.

3. Pins 1 and 2.

4. Device mounted o n standard printed-ci rcuit board.

ESD standards compliance

THERMAL CHARACTE RISTICS

Notes

1. Refer to SOT883 standard mounting conditions (foo tprint), FR4 with 60 µm copper strip line.

2. FR4 single-sided copper 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

Ipp peak pulse current 8/20 µs pulse; notes 1, 2 and 3

PESD3V3L2UM −3 A

PESD5V0L2UM −2.5 A

Ppp peak pulse power 8/20 µs pulse; notes 1, 2 and 3 −30 W

IFSM non-repetitive peak forward current tp = 1 ms; square pulse −3.5 A

IZSM non-repetitive peak reverse current tp = 1 ms; square pulse

PESD3V3L2UM −0.9 A

PESD5V0L2UM −0.8 A

Ptot total power dissipation Tamb = 25 °C; note 4 −250 mW

PZSM non-repetitive peak re verse power

dissipation tp = 1 ms; square pulse; see Fig.4 −6 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

ESD electrostatic dischar ge IEC 61000-4-2 (c ontact discharge) 15 −kV

HBM MIL-Std 883 10 −kV

IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact)

HBM MIL-Std 883, class 3 >4 kV

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient all diodes loaded; note 1 500 K/W

one diode loaded; note 2 290 K/W

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NXP Semiconductors Pr oduct dat a shee t

Low capacitance double ESD protection

diode PESDxL2UM series

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.

2. Pins 1 and 3 or 2 and 3.

3. Pins 1 and 2.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per diode

VFforward voltage IF = 200 mA −11.2 V

VRWM revers e stand-off voltage

PESD3V3L2UM − − 3.3 V

PESD5V0L2UM − − 5 V

IRM reverse leakage curre nt

PESD3V3L2UM VR = 3.3 V −75 300 nA

PESD5V0L2UM VR = 5 V −525 nA

V(CL)R clamping voltage 8/20 µs pulse

PESD3V3L2UM Ipp = 1 A; notes 1 and 2 − − 8 V

Ipp = 3 A; notes 1 and 2 − − 12 V

Ipp = 1 A; notes 1 and 3 − − 9 V

Ipp = 3 A; notes 1 and 3 − − 13 V

PESD5V0L2UM Ipp = 1 A; notes 1 and 2 − − 10 V

Ipp = 2.5 A; notes 1 and 2 − − 13 V

Ipp = 1 A; notes 1 and 3 − − 11 V

Ipp = 2.5 A; notes 1 and 3 − − 15 V

VBR breakdown voltage IZ = 1 mA

PESD3V3L2UM 5.32 5.6 5.88 V

PESD5V0L2UM 6.46 6.8 7.14 V

SZtemperature coefficient IZ = 1 mA

PESD3V3L2UM −1.3 −mV/K

PESD5V0L2UM −2.9 −mV/K

rdiff differential resistance IR = 1 mA

PESD3V3L2UM − − 200 Ω

PESD5V0L2UM − − 100 Ω

Cddiode capacit an ce

PESD3V3L2UM f = 1 MHz; VR = 0 −22 28 pF

f = 1 MHz; VR = 5 −12 17 pF

PESD5V0L2UM f = 1 MHz; VR = 0 −16 19 pF

f = 1 MHz; VR = 5 −811 pF

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NXP Semiconductors Pr oduct dat a shee t

Low capacitance double ESD protection

diode PESDxL2UM series

handbook, halfpage

10−1

MLE215

10−210−11tp (ms)

IZSM

(A)

PESD3V3L2UM

PESD5V0L2UM

Fig.2 Non-repetitive peak reverse current as a

function of pulse time (squa re pulse).

handbook, halfpage

1234

VR (V)

(pF)

MLE216

PESD3V3L2UM

PESD5V0L2UM

Fig.3 Diode capacitance as a function of reverse

voltage; typical values.

Tj = 25 °C; f = 1 MHz.

handbook, halfpage

102MLE217

10−210−11tp (ms)

PZSM

(W)

PESD3V3L2UM

PESD5V0L2UM

Fig.4 Maximum non-repetitive peak reverse

power dissipation as a func tion of pulse

duration (squ are pulse).

PZSM = VZSM x IZSM.

VZSM is the non-repetitive peak reverse voltage at IZSM.

handbook, halfpage

010

e−t

20 t (µs)

Ipp

(%)

120

MLE218

100 % Ipp; 8 µs

50 % Ipp; 20 µs

Fig.5 8/20 µs pulse waveform according to

IEC 61000-4-5.

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NXP Semiconductors Pr oduct dat a shee t

Low capacitance double ESD protection

diode PESDxL2UM series

handbook, full pagewidth

MLE219

450 Ω

50 Ω

Note 1: IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

D.U.T

PESDxL2UM

RG 223/U

50 Ω coax

ESD TESTER 4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

GND GND1

GND2

GND

unclamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

unclamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

vertical scale = 5 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 5 V/div

horizontal scale = 50 ns/div

PESD5V0L2UM

PESD3V3L2UM

note 1

Fig.6 ESD clamping test set-up an d waveforms.

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NXP Semiconductors Pr oduct dat a shee t

Low capacitance double ESD protection

diode PESDxL2UM series

PACKAGE OUTLINE

UNIT A1

max.

A(1) bb

1e1

eLL

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.50

0.46 0.20

0.12 0.55

0.47

0.03 0.62

0.55 0.35 0.65

DIMENSIONS (mm are the original dimensions)

Note

1. Including plating thickness

0.30

0.22

0.30

0.22

SOT883 SC-101 03-02-05

03-04-03

1.02

0.95

0 0.5 1 mm

scale

eadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88

2005 May 23 8

NXP Semiconductors Pr oduct dat a shee t

Low capacitance double ESD protection

diode PESDxL2UM series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective spe cifica t ion for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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any of these products are for illustrative purposes only.

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warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificat ion .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other cond itions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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extract of th e product data given in the Limiting values and

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands R76/02/pp9 Date of release: 2005 May 23 Document orde r number: 9397 750 15162