12F100B BN R Y - Vishay [Semiconductors]

Document Number: 93487 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 29-Sep-08 1

Standard Recovery Diodes

(Stud Version), 12 A

12F(R) Series

Vishay High Power Products

FEATURES

• High surge current capability

• Stud cathode and stud anode version

• Wide current range

• Types up to 1200 V VRRM

• RoHS compliant

• Designed and qualified for industrial and consumer level

TYPICAL APPLICATIONS

• Battery charges

• Converters

• Power supplies

• Machine tool controls

ELECTRICAL SPECIFICATIONS

Note

(1) Avalanche version only available from VRRM 400 V to 1200 V

PRODUCT SUMMARY

IF(AV) 12 A

DO-203AA (DO-4)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IF(AV)

12 A

TC 144 °C

IF(RMS) 19 A

IFSM

50 Hz 265 A

60 Hz 280

I2t50 Hz 351 A2s

60 Hz 320

VRRM Range 100 to 1200 V

TJ- 65 to 175 °C

VOLTAGE RATINGS

TYPE

NUMBER

VOLTAGE

CODE

VRRM, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

VRSM, MAXIMUM

NON-REPETITIVE

PEAK VOLTAGE

VR(BR), MINIMUM

AVALANCHE

VOLTAGE

V (1)

IRRM MAXIMUM

AT TJ = 175 °C

12F(R)

10 100 150 -

20 200 275 -

40 400 500 500

60 600 725 750

80 800 950 950

100 1000 1200 1150

120 1200 1400 1350

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93487

2Revision: 29-Sep-08

12F(R) Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 12 A

Note

(1) Available only for avalanche version, all other parameters the same as 12F

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current

at case temperature IF(AV) 180° conduction, half sine wave 12 A

144 °C

Maximum RMS forward current IF(RMS) 19 A

Maximum on-repetitive peak

reverse power PR(1) 10 µs square pulse, TJ = TJ maximum 7 K/W

Maximum peak, one-cycle forward,

non-repetitive surge current IFSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

265

t = 8.3 ms 280

t = 10 ms 100 % VRRM

reapplied

225

t = 8.3 ms 235

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

351

A2s

t = 8.3 ms 320

t = 10 ms 100 % VRRM

reapplied

250

t = 8.3 ms 226

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3510 A2√s

Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.77 V

High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.97

Low level value of forward

slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 10.70

mΩ

High level value of forward

slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 6.20

Maximum forward voltage drop VFM Ipk = 38 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.26 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating

temperature range TJ- 65 to 175 °C

Maximum storage temperature range TStg - 65 to 200

Maximum thermal resistance,

junction to case RthJC DC operation 2

K/W

Maximum thermal resistance,

case to heatsink RthCS Mounting surface, smooth, flat and greased 0.5

Allowable mounting torque

Not lubricated threads 1.5 + 0 - 10 % N · m

13 lbf · in

Lubricated threads 1.2 + 0 - 10 % N · m

10 lbf · in

Approximate weight 7g

0.25 oz.

Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)

Document Number: 93487 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 29-Sep-08 3

12F(R) Series

Standard Recovery Diodes

(Stud Version), 12 A Vishay High Power Products

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 3 - Forward Power Loss Characteristics

ΔRthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.33 0.26

TJ = TJ maximum K/W

120° 0.41 0.44

90° 0.53 0.58

60° 0.78 0.81

30° 1.28 1.29

140

150

160

170

180

0 2 4 6 8 101214

30° 60° 90° 120° 180°

Maximum Allowable Case Temperature (°C)

Conduction Angle

Average Forward Current (A)

12F(R) Series

R (DC) = 2.0 K/W

thJC

130

140

150

160

170

180

048121620

30°

60°

90°

120°

180°

Maximum Allowable Case Temperature (°C)

Conduction Period

Average Forward Current (A)

12F(R) Series

R (DC) = 2.0 K/W

thJC

0255075100

Maximum Allowable Ambient Temperature (°C)

R=8K/W-DeltaR

thSA

10K/W

12K

15K/W

20K/W

30K/W

02468101214

Average Forward Current (A)

RMS Limit

Maximum Average Forward Power Loss (W)

Conduction Angle

180°

120°

90°

60°

30°

12F(R) Series

T = 175°C

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93487

4Revision: 29-Sep-08

12F(R) Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 12 A

Fig. 4 - Forward Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Thermal Impedance ZthJC Characteristics

0255075100

Maximum Allowable Ambient Temperature (°C)

R=6K/W-DeltaR

thS

8K/W

10K/W

12K/W

15K/W

20K/W

30K/W

0 4 8 121620

180°

120°

90°

60°

30°

Average Forward Current (A)

RMS Limit

Maximum Average Forward Power Loss (W)

Conduction Period

12F(R) Series

T = 175°C

100

125

150

175

200

225

250

110100

Peak Half Sine Wave Forward Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

12F(R) Series

Initial T = 175°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

100

125

150

175

200

225

250

275

0.01 0.1 1

Peak Hal f Sine Wave Forward Current (A)

Pulse Train Duration (s)

12F(R) Series

Initial T = 175°C

No Voltage Reapplied

Rated V Reapplied

RRM

Versus Pulse Train Duration.

Maxi mum Non Repetitive Surge Current

100

1000

0123456

T = 25°C

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

12F(R) Series

T = 175°C

0.1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

12F(R) Series

Steady State Value

R = 2.0 K/W

(DC Operation)

thJC

Document Number: 93487 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 29-Sep-08 5

12F(R) Series

Standard Recovery Diodes

(Stud Version), 12 A Vishay High Power Products

ORDERING INFORMATION TABLE

1- Current rating: Code = IF(AV)

2- F = Standard device

3- None = Stud normal polarity (cathode to stud)

R = Stud reverse polarity (anode to stud)

4- Voltage code x 10 = VRRM (see Voltage Ratings table)

5-None = Stud base DO-203AA (DO-4) 10-32UNF-2A

M = Stud base DO-203AA (DO-4) M5 x 0.8

(not available for avalanche diodes)

Device code

51324

12 F R 120 M

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95311

Document Number: 95311 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 30-Jun-08 1

DO-203AA (DO-4)

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

3.30 (0.13)

4.00 (0.16)

5.50 (0.22) MIN.

10.20 (0.40)

MAX.

11.50 (0.45)

10.70 (0.42)

10/32" UNF-2A

For metric devices: M5 x 0.8

0.8 ± 0.1

(0.03 ± 0.004)

R 0.40

R (0.02)

Ø 6.8 (0.27)

Ø 1.80 ± 0.20

(Ø 0.07 ± 0.01)

3.50 (0.14)

20.30 (0.80) MAX.

11 (0.43)

+ 0.3

(0.08 )

+ 0.01

Legal Disclaimer Notice

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Revision: 12-Mar-12 1Document Number: 91000

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.