FP210 Ordering number : EN4537A FP210 PNP Epitaxial Planar Silicon Transistor Driver Applications Features * * Composite type with 2 transistors (PNP) contained in one package, facilitating high-density mounting. The FP210 is formed with 2 chips being equivalent to the 2SB1123, placed in one package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --60 V Collector-to-Emitter Voltage VCEO --50 V Emitter-to-Base Voltage VEBO --6 V IC --2 A Collector Current Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Mounted on a ceramic board (250mm20.8mm) 1unit 0.8 W Total Dissipation PT Mounted on a ceramic board (250mm20.8mm) 1.1 W Junction Temperature Tj Storage Temperature Tstg --4 --400 A mA 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Conditions VCB=--50V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--100mA Ratings min typ max 140 Unit --100 nA --100 nA 400 VCE=--10V, IC=--50mA VCB=--10V, f=1MHz 150 MHz IC=--1A, IB=--50mA IC=--1A, IB=--50mA --0.3 --0.7 V --0.9 --1.2 V 22 pF Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--10A, IE=0A IC=--1mA, RBE= Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton IE=--10A, IC=0A See specified Test Circuit. 60 ns Storage Time tstg See specified Test Circuit. 450 ns tf See specified Test Circuit. 30 ns Fall Time --60 V --50 V --6 V Marking : 210 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2805EA MS IM TB-0000201 / 52098HA (KT) / 53094TH (KOTO) BX-0215 No.4537-1/4 FP210 Package Dimensions unit : mm 7010-006 Bottom View 4.5 3.4 1.5 2.8 0.5 1.0 0.4 7 4 3 1.75 5 0.3 2 1 0.5 2.5 1.57 6 1.0 4.0 (0.5) 1.8 0.2 MIN(Flat block) (0.5) 0 to 0.1 1.75 1 : Base 1 2 : Collector 1 3 : Emitter Common 4 : Collector 2 5 : Base 2 6 : Collector 2 7 : Collector 1 0.2 0.7 3.5 1.2 D0.15 Top View SANYO : PCP5 Electrical Connection 7 1 1 : Base 1 2 : Collector 1 3 : Emitter Common 4 : Collector 2 5 : Base 2 6 : Collector 2 7 : Collector 1 6 2 4 3 Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT OUTPUT IB2 RB VR RL 50 + 5 + 100F Top view 470F VBE=5V VCC= --25V IC=10IB1= --10IB2= --500mA IC -- VCE --1.6 --1.2 A --10m --5mA --0.8 --2mA --0.4 0 --0.4 --0.8 --1.2 A --2.0m --1.8mA --1.6mA --1.4mA --1.2mA --1.0mA --400 --300 --0.8mA --200 --0.6mA --0.4mA --100 IB=0mA 0 IC -- VCE --500 From a top --50mA --25mA --45mA --20mA --40mA --15mA --35mA --30mA Collector Current, IC -- A Collector Current, IC -- A --2.0 --1.6 Collector-to-Emitter Voltage, VCE -- V --0.2mA IB=0mA 0 --2.0 ITR10979 0 --2 --4 --6 --8 --10 Collector-to-Emitter Voltage, VCE -- V ITR10980 No.4537-2/4 FP210 IC -- VBE --2.4 VCE= --2V 7 --2.0 5 DC Current Gain, hFE Collector Current, IC -- A hFE -- IC 1000 VCE= --2V --1.6 --1.2 Ta= 7 5C 25C --25 C --0.8 --0.4 Ta=75C 25C --25C 3 2 100 7 5 3 2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 5 7 --0.01 3 2 100 7 5 3 5 7 --0.1 2 3 5 7 --1.0 2 3 ITR10982 Cob -- VCB 2 f=1MHz Output Capacitance, Cob -- pF 5 100 7 5 3 2 10 2 7 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 7 --100 ITR10984 VBE(sat) -- IC --10 IC / IB=20 7 IC / IB=20 7 5 3 2 --100 7 5 C 75 Ta= C --25 25C 3 2 --10 5 3 2 --1.0 25C Ta= --25C 7 75C 5 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 5 3 DC tio n --0.1 7 5 3 2 Ta=25C Single pulse Mounted on a ceramic board (250mm20.8mm) --0.01 7 5 2 3 5 7 --1.0 2 3 5 7 --10 2 5 7 --0.1 2 3 5 7 --1.0 2 3 ITR10986 PC(TR2) -- PC(TR1) Mounted on a ceramic board (250mm20.8mm) op era 3 2 3 Collector Current, IC -- A Collector Dissipation, PC(TR2) -- W IC= --2A 2 1.0 30 1m 0s s 10 ms ICP= --4A 3 2 7 --0.01 ITR10985 ASO 5 --1.0 7 5 2 ITR10983 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 --1.0 3 VCE(sat) -- IC --1000 Collector Current, IC -- A 3 Collector Current, IC -- A VCB= --10V 7 2 ITR10981 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz --1.2 3 Collector-to-Emitter Voltage, VCE -- V 0.8 0.6 0.4 0.2 0 5 7 ITR10987 0 0.2 0.4 0.6 0.8 Collector Dissipation, PC(TR1) -- W 1.0 ITR10988 No.4537-3/4 FP210 PC -- Ta 1.2 Mounted on a ceramic board (250mm20.8mm) Collector Dissipation, PC -- W 1.1 1.0 To t 0.8 al 0.6 Di ss 1u nit ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR10989 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. PS No.4537-4/4