MRF8P20165WHR3 MRF8P20165WHSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 1880 to 2025 MHz.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 550 mA, VGSB =1.3Vdc,P
out = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz 16.1 47.0 7.1 --27.7
1960 MHz 16.3 47.7 7.1 --29.7
1995 MHz 16.3 46.0 7.0 --33.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point ≃190 Watts (1)
Features
Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃100 MHz.
Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature TC125 C
Operating Junction Temperature (2) TJ225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz
Case Temperature 114C, 160 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz
RJC
0.79
0.53
C/W
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8P20165WH
Rev. 0, 4/2011
Freescale Semiconductor
Technical Data
1930--1995 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P20165WHR3
MRF8P20165WHSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20165WHSR3
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P20165WHR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Freescale Semiconductor, Inc., 2011.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1C (Minimum)
Machine Model (per EIA/JESD22--A115) B (Minimum)
Charge Device Model (per JESD22--C101) III (Minimum)
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 5 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics (2)
Gate Threshold Voltage (1)
(VDS =10Vdc,I
D= 232 Adc)
VGS(th) 1.2 1.8 2.7 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 550 mAdc, Measured in Functional Test)
VGS(Q) 2.0 2.7 3.5 Vdc
Drain--Source On--Voltage (1)
(VGS =10Vdc,I
D=1.5Adc)
VDS(on) 0.05 0.2 0.3 Vdc
Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 550 mA, VGSB =1.3Vdc,
Pout = 37 W Avg., f1 = 1980 MHz, f2 = 2010 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 14.2 14.8 17.2 dB
Drain Efficiency D40.6 44.3 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.2 5.8 —dB
Adjacent Channel Power Ratio ACPR —--31.0 --28.7 dBc
Typical Broadband Performance (4) —(In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 550 mA,
VGSB =1.3Vdc,P
out = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz 16.1 47.0 7.1 --27.7
1960 MHz 16.3 47.7 7.1 --29.7
1995 MHz 16.3 46.0 7.0 --33.3
1. Side A and Side B are tied together for this measurement.
2. VDDA and VDDB must be tied together and powered by a single DC power supply.
3. Part internally matched both on input and output.
4. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P20165WHR3 MRF8P20165WHSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (1) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 550 mA,
VGSB = 1.3 Vdc, 1930--1995 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —104 — W
Pout @ 3 dB Compression Point (2) P3dB —190 — W
IMD Symmetry @ 74 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—20 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —100 —MHz
Gain Flatness in 65 MHz Bandwidth @ Pout =37WAvg. GF—0.2 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.017 —dB/C
Output Power Variation over Temperature
(--30Cto+85C)
P1dB —0.01 —dB/C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
Figure 2. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Layout
MRF8P20165W
Rev. 1
C8
VGGA
CUT OUT AREA
VGGB
VDDB
VDDA
C10
R2 C6
Z1
R1
C3
C4
C2
C1
C11
C9
R3 C7
C19
C23
C25
C24
C29
C28
C26 C27
C13
C12
C15
C16
C
P
C18
C22
C14
Note 1: Component numbers C5, C17, C20 and C21 are not used.
Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply.
C30
Table 5. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C6, C7, C12, C13 15 pF Chip Capacitors ATC600F150JT250XT ATC
C3, C4 1.8 pF Chip Capacitors ATC600F1R8BT250XT ATC
C8, C9, C24, C25 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C10, C11 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet
C14 0.3 pF Chip Capacitor ATC600F0R3BT250XT ATC
C15, C16 1.0 pF Chip Capacitors ATC600F1R0BT250XT ATC
C18, C19 2.0 pF Chip Capacitors ATC600F2R0BT250XT ATC
C22, C23 18 pF Chip Capacitors ATC600F180JT250XT ATC
C26, C27 0.1 pF Chip Capacitors ATC600F0R1BT250XT ATC
C28, C29 220 F, 50 V Electrolytic Capacitors 227CKS050M Illinois Capacitor
C30 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC
R1 50 , 4 W Chip Resistor CW12010T0050GBK ATC
R2, R3 2.37 , 1/4 W Chip Resistors CRCW12062R37FNEA Vishay
Z1 1750 MHz Band 90, 3 dB Hybrid Coupler GSC351--HYB1900 Soshin
PCB 0.020,r=3.5 RO4350B Rogers
MRF8P20165WHR3 MRF8P20165WHSR3
5
RF Device Data
Freescale Semiconductor
Figure 3. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Layout
VGGA C7
R1
C5
Z1
R3
C8
C6
C3
C4
C1
C2
R2
C29
C30
C27
C28
C24
C23
C18
C17
C22
C21
C19
C20
C10
C9
C16
C15
C12
C11
C13 C14
C
P
C25
C26
MRF8P20165W
Rev. 0
VGGB
VDDB
VDDA
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
Table 6. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 1.6 pF Chip Capacitor ATC600S1R6BT250XT ATC
C2 1.8 pF Chip Capacitor ATC600S1R8BT250XT ATC
C3, C4, C5, C6, C21, C22
C29, C30
10 pF Chip Capacitors ATC600S100JT250XT ATC
C7, C8, C23, C24 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C9,C11,C13,C15 2.7 pF Chip Capacitors ATC600S2R7BT250XT ATC
C10, C12, C14, C16, C17 1 pF Chip Capacitors ATC600S1R0BT250XT ATC
C18, C28 0.6 pF Chip Capacitors ATC600S0R6BT250XT ATC
C19, C20 1.5 pF Chip Capacitors ATC600S1R5BT250XT ATC
C25, C26 330 F, 35 V Electrolytic Capacitors MCGPR35V337M10X16--RH Multicomp
C27 0.5 pF Chip Capacitor ATC600S0R5BT250XT ATC
R1, R2 2.37 , 1/4 W Chip Resistors CRCW12062R37FNEA Vishay
R3 51 , 1/4 W Chip Resistor CRCW120651R0FKEA Vishay
Z1 1900 MHz Band 90, 3 dB Hybrid Coupler GSC351--HYB1900 Soshin
PCB 0.030,r=3.48 RO4350 Rogers
6
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
4
2
2
4
2
2
Single--ended
Quadrature combined
Doherty
Push--pull
4
4
4
4
Figure 4. Possible Circuit Topologies
MRF8P20165WHR3 MRF8P20165WHSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
PARC (dB)
1880
Gps
ACPR
f, FREQUENCY (MHz)
Figure 5. 2--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 37 Watts Avg.
-- 3 . 5
-- 2 . 5
--2.75
-- 3
--3.25
10
20
19
18
-- 3 7
52
50
48
46
-- 2 7
-- 2 9
-- 3 1
-- 3 3
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17
16
15
14
13
12
11
1900 1920 1940 1960 1980 2000 2020 2040
44
-- 3 5
--3.75
IM3, THIRD ORDER
INTERMODULATION (dBc)
-- 2 5
-- 2 1
-- 2 2
-- 2 3
-- 2 4
-- 2 6
ACPR (dBc)
IM3
PARC
VDD =28Vdc,P
out =37W(Avg.),I
DQA = 550 mA, VGSB =1.3Vdc
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
30 MHz Carrier Spacing, Input Signal
PAR = 9.8 dB @ 0.01% Probability on CCDF
PARC (dB)
1880
Gps
ACPR
f, FREQUENCY (MHz)
Figure 6. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 37 Watts Avg.
-- 3 . 5
-- 2 . 5
--2.75
-- 3
--3.25
10
20
19
18
-- 3 6
52
50
48
46
-- 2 6
-- 2 8
-- 3 0
-- 3 2
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17
16
15
14
13
12
11
1900 1920 1940 1960 1980 2000 2020 2040
44
-- 3 4
--3.75
ACPR (dBc)
PARC
VDD =28Vdc,P
out =37W(Avg.),I
DQA = 550 mA, VGSB =1.3Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Figure 7. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 200
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--UIM3--L
IM5--U
IM5--L
IM7--L
IM7--U
100
VDD =28Vdc,P
out = 74 W (PEP), IDQA = 550 mA, VGSB =1.3Vdc
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 1960 MHz
8
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
TYPICAL CHARACTERISTICS
Figure 8. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
20
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 30 40 60
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
-- 3 d B = 3 9 W
50
D
ACPR
PARC
ACPR (dBc)
-- 4 0
-- 1 0
-- 1 5
-- 2 0
-- 3 0
-- 2 5
-- 3 5
17.5
Gps, POWER GAIN (dB)
17
16.5
16
15.5
15
14.5
Gps
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =28Vdc,I
DQA = 550 mA, VGSB =1.3Vdc
f = 1960 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
-- 1 d B = 1 7 W
-- 2 d B = 2 8 W
1
Gps ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
12
18
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17
16
10 100 200
10
-- 6 0
ACPR (dBc)
15
14
13
0
-- 3 0
-- 4 0
-- 5 0
VDD =28Vdc,I
DQA = 550 mA, VGSB =1.3Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
1930 MHz
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
1995 MHz
1960 MHz
1930 MHz
1960 MHz
1995 MHz
1930 MHz
1960 MHz
1995 MHz
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7
versus Output Power
12
18
-- 7 0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
IM3, IM5, IM7 (dBc)
Gps, POWER GAIN (dB)
17
16
10 200
-- 6 0
15
14
13
Figure 11. Broadband Frequency Response
0
18
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 550 mA
VGSB =1.3Vdc
12
9
6
GAIN (dB)
15
3
1800 1835 1870 1905 1940 1975 2010 2045 2080
100
IM3--U
IM3--L
IM5--U
IM5--L
IM7--U
IM7--L
Gps
Input Signal PAR = 9.8 dB @
0.01% Probability on CCDF
VDD =28Vdc,I
DQA = 550 mA, VGSB = 1.3 Vdc, f1 = 1945 MHz
f2 = 1975 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
MRF8P20165WHR3 MRF8P20165WHSR3
9
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 12. CCDF W--CDMA IQ Magnitude
Clipping, 2--Carrier Test Signal
10
1
0.1
0.01
0.001
2468
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF
Input Signal
12
Figure 13. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
-- 11 0
--120
-- 7 0
-- 2 0
-- 8 0
-- 6 0
-- 5 0
(dB)
-- 9 0
--100
-- 4 0
-- 3 0
3.84 MHz
Channel BW
-- I M 3 i n
3.84 MHz BW
+IM3 in
3.84 MHz BW
--ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
6015 45300-- 1 5-- 3 0-- 4 5-- 6 0--75 75
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 14. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
2468
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Input Signal
12
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 15. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
10
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
VDD =28Vdc,I
DQA = 550 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Output Power
P1dB P3dB
(dBm) (W) D(%) (dBm) (W) D(%)
1930 16.0 -- j8.99 1.58 -- j5.68 50.4 110 55.3 51.2 132 55.8
1960 17.2 -- j2.43 1.55 -- j6.08 50.4 110 54.4 51.3 135 53.5
1990 18.6 + j3.55 1.93 -- j5.82 50.4 110 54.4 51.2 132 55.4
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 16. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Zsource Zload
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28Vdc,I
DQA = 550 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Drain Efficiency
P1dB P3dB
(dBm) (W) D(%) (dBm) (W) D(%)
1930 16.0-- j8.99 3.45 -- j3.43 48.5 71 65.8 49.6 91 66.5
1960 17.2 -- j2.43 3.68 -- j3.88 48.7 74 65.6 49.6 91 66.1
1990 18.6 + j3.55 2.95-- j3.99 48.2 66 65.1 49.6 91 65.3
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 17. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Zsource Zload
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
MRF8P20165WHR3 MRF8P20165WHSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
12
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
MRF8P20165WHR3 MRF8P20165WHSR3
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
MRF8P20165WHR3 MRF8P20165WHSR3
15
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, Software and Tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8P20165WH and MRF8P20165WHS parts will be available for 2 years after release of
MRF8P20165WH and MRF8P20165WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8P20165WH and MRF8P20165WHS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Apr. 2011 Initial Release of Data Sheet
16
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
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Document Number: MRF8P20165WH
Rev. 0, 4/2011
