May 2012 i
© 2011 Microsemi Corporation
RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs
Radiation Performance
• SEU-Hardened Registers Eliminate the Need for Triple-Module
Redundancy (TMR)
– Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-
cm2/mg
– SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)
• SRAM Upset Rate of <10-10 Errors/Bit-Day with Use of Error
Detection and Correction (EDAC) IP (included) with Integrated
SRAM Scrubber
– Single-Bit Correction, Double-Bit Detection
– Variable-Rate Background Refreshing
• Total Ionizing Dose Up to 300 krad (Si, Functional)
• Single-Event Latch-Up Immunity (SEL) to LETTH > 117 MeV-
cm2/mg
• TM1019 Test Data Available
Processing Flows
• B-Flow – MIL-STD-883B
• E-Flow – Extended Flow
• EV-Flow – Class V Equivalent Flow Processing Consistent with
MIL-PRF 38535 (RTAX-DSP only)
• V-Flow – QML Class V per MIL-PRF-38535 (RTAX-S/SL only)
Prototyping Options
• Commercial Axcelerator® Devices for Functional Verification
(RTAX™-S/SL only)
• RTAX-S/SL PROTO and RTAX-DSP PROTO Devices with
Same Functional and Timing Characteristics as Flight Unit in a
Non-Hermetic Package
• Low-Priced Reprogrammable ProASIC®3 Option for Functional
Verification (RTAX-S/SL only)
RTAX-SL Low Power Option
• Offers Up To 80% Saving of Static Current Compared to
Standard RTAX-S Device at Worst-Case Conditions
Leading-Edge Performance
• High-Performance Embedded FIFOs
• 350+ MHz System Performance
• 500+ MHz Internal Performance
• 700 Mb/s LVDS Capable I/Os
Specifications
• Up to 4 Million Equivalent System Gates or 500 k Equivalent
ASIC Gates
• Up to 20,160 SEU-Hardened Flip-Flops
• Up to 840 I/Os with SEU-Protected Input, Output, and Enable
Registers
• Up to 540 kbits Embedded SRAM
• Manufactured on 0.15 µm CMOS Antifuse Process Technology,
7 Layers of Metal
• Electrostatic Discharge (ESD) is 2,000 V (HBM MIL-STD-883,
TM3015)
Embedded Multiply/Accumulate Blocks
(RTAX-DSP Only)
• Up to 120 Multiply/Accumulate Blocks
• Fully SEU- and SET-Hardened
• 125 MHz Performance throughout Military Temperature Range
• Flexible, Cascadable Accumulate Function
Features
• Single-Chip, Nonvolatile Solution
• 1.5 V Core Voltage for Low Power
• Flexible, Multi-Standard I/Os:
– 1.5 V, 1.8 V, 2.5 V, 3.3 V Mixed Voltage Operation
– Bank-Selectable I/Os – 8 Banks per Chip
– Single-Ended I/O Standards: LVTTL, LVCMOS, 3.3 V PCI
– JTAG Boundary Scan Testing (as per IEEE 1149.1)
– Differential I/O Standards: LVPECL and LVDS
– Voltage-Referenced I/O Standards: GTL+, HSTL Class 1,
SSTL2 Class 1 and 2, SSTL3 Class 1 and 2
– Hot-Swap with Cold-Sparing Support (Except PCI)
• Embedded Memory with Variable Aspect Ratio:
– Independent, Width-Configurable Read and Write Ports
– Programmable Embedded FIFO Control Logic
– ROM Emulation Capability
• Deterministic, User-Controllable Timing
• Unique In-System Diagnostic and Debug Capability
Table 1 • RTAX Family Product Profile
Device RTAX250S/SL RTAX1000S/SL RTAX2000S/SL RTAX4000S/SL RTAX2000D/DL RTAX4000D/DL
Capacity
Equivalent System Gates
ASIC Gates
250,000
30,000
1,000,000
125,000
2,000,000
250,000
4,000,000
500,000
2,000,000
250,000
4,000,000
500,000
Modules
Register (R-cells)
Combinatorial (C-cells)
1,408
2,816
6,048
12,096
10,752
21,504
20,160
40,320
9,856
19,712
18,480
36,960
Embedded RAM/FIFO (w/o EDAC)
Core RAM Blocks
Core RAM Bits (K = 1,024)
12
54 k
36
162 k
64
288 k
120
540 k
64
288 k
120
540 k
Embedded Multiply/Accumulate
Blocks – – – – 64 120
Clocks (segmentable)
Hardwired
Routed
4
4
4
4
4
4
4
4
4
4
4
4
I/Os
I/O Banks
User I/Os (maximum)
I/O Registers
8
198
744
8
418
1,548
8
684
2,052
8
840
2,520
8
684
2,052
8
840
2,520
Package
CG/LG*
CQ
624
208, 352
624
352
624, 1152
256, 352
1272
352
1272
352
1272
352
Note: *The body size of the CG1272 and LG1272 packages used on the RTAX-DSP devices is slightly larger than the body size of the
CG/LG1272 used on RTAX40 00S/S L devices.
Revision 15