VTB Process Photodiodes VTB5040B, 5041B EG & G VACTEC PRODUCT DESCRIPTION Planar silicon photodiode in a "flat" window, dual lead TO-5 package. The package incorporates an infrared rejec- tion filter, Cathode is common to the case. These diodes have very high shunt resistance and good blue response, PACKAGE DIMENSIONS inch (mm) 182 (4.62) 1.00 (25.4) | 2172 {4.37} MINIMUM 010 -040 034 (0.25) 8M" 1 a2) N | fo.) NOM. NV 245, (6.22) * -365 (9.27) 1235 (5.97) 7355 (9.02) Lt] ; { -330 (8.38) O17 200 7330 (8.13) (8.13) {0.43} DIA. NOM. i508) DIA. NOM, CASE14 T0-5 HERMETIC CHIP ACTIVE AREA: .008 in? (5.16 mm?) ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40C to 110C Operating Temperature: -40C to 110C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 12-13) SYMBOL, CHARACTERISTIC TEST CONDITIONS ae ee UNITS Min. | Typ. | Max. | Min. | Typ. | Max. 7 Min. Typ. | Max. Isc | Short Circuit Current H = 100 fc, 2850 K 3.0 | 45 3.0 | 45 BA TC Isc | Isc Temp. Coefficient 2850 K 02 | .08 02 | .08 %/C Voc | Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV TC Vac | Voc Temp. Coefficient 2850 K -2.0 -2.0 mv /C H=0,VR=20V 2000 100 pA 1 H=0,V= 10 mV O7 14 GQ TC Rsu | Rey Temp. Coefficient H=0,V=10mV -8.0 -8.0 %/ C Cj | Junction Capacitance H=0,V=0 1.0 1.0 nF Arange_| Spectral Application Range 330 720 | 330 720 nam Ap | Spectral Response - Peak + 580 580 nm Ver | Breakdown Voltage 2} 40 2 { 40 Vv 62 | Ang. Resp. - 50% Resp. Pt. +45 +45 Degrees Wl joise Equivalent Power 1.1x 107 (Typ) | 2.4x10"4 (Typ) WiVRE pecific Detectivity 2.2x10' (Typ) | 9.7x10" (typ) osm Fiz /W 26