SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEATURES
* Low cost
* Low leakage
* Low forward voltage drop
* High current capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has U L flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.33 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N4001
THRU
1N4007
DO-41
MAXIMUM RATINGS
(At TA = 25oC unless otherwise noted)
NOTES :
Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
Dimensions in inches and (millimeters)
2002-11
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 75
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps1.0
30
15
-55 to + 150
Amps
pF
0
C
UNITS
Typical Thermal Resistance Rθ
JA
50
0
C/W
50 100 200 400 600 800 1000
7035 140 280 420 700560
50 200 400 600 800 1000100
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
L
= 75
o
C
V
F
SYMBOL
I
R
UNITS
1.1
5.0
30 uAmps
uAmps
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 1.0A DC Volts
@T
A
= 25
o
C
@T
A
= 100
o
C
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
50
1.0 (25.4)
MIN.
.166 (4.2)
.205 (5.2)
1.0 (25.4)
MIN.
.107 (2.7)
.080 (2.0) DIA.
.034 (0.9)
.028 (0.7) DIA.