BZX84C Series
Zener diode
Features
1. High reliability
2. Wide voltage range available
3. Low reverse current level
4. Small outline package for space savings
5. Surface mount package
Applications
Voltage st abil ization
Absolute Maximum Ratings
Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
Power dissipation Tamb≤75℃ P
V410 mW
Z-current IZPV/VZmA
Junction temperature Tj150 ℃
Storage temperature range Tstg -55~+150 ℃
Maximum Thermal Resistance
Tj=25℃ Parameter Test Conditions Symbol Value Unit
Junction ambient I=9.5mm(3/8”) T L=constant RthJA 300 K/W
Stresses exceeding maximum rati ngs may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25℃ Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=10mA VF 0.9 V
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BZX84C Series
Type VZnom IZT for V
ZT & rzjT rzjK at IZK IR & IR at VRTKVZ
BZX84C Marking V mA V1) Ω Ω mA μA V %/K
2V4 Z11 2.4 5 2.2~2.6 <100 <600 1 <50 1 -0.09~-0.06
2V7 Z12 2.7 5 2.5~2.9 <100 <600 1 <20 1 -0.09~-0.06
3V0 Z13 3.0 5 2.8~3.2 <95 <600 1 <10 1 -0.08~-0.05
3V3 Z14 3.3 5 3.1~3.5 <95 <600 1 <5 1 -0.08~-0.05
3V6 Z15 3.6 5 3.4~3.8 <90 <600 1 <5 1 -0.08~-0.05
3V9 Z16 3.9 5 3.7~4.1 <90 <600 1 <3 1 -0.08~-0.05
4V3 W9 4.3 5 4.0~4.6 <90 <600 1 <3 1 -0.06~-0.03
4V7 Z1 4.7 5 4.4~5.0 <80 <500 1 <3 2 -0.05~+0.02
5V1 Z2 5.1 5 4.8~5.4 <60 <480 1 <2 2 -0.02~+0.02
5V6 Z3 5.6 5 5.2~6.0 <40 <400 1 <1 2 -0.05~+0.05
6V2 Z4 6.2 5 5.8~6.6 <10 <150 1 <3 4 0.03~0.06
6V8 Z5 6.8 5 6.4~7.2 <15 <80 1 <2 4 0.03~0.07
7V5 Z6 7.5 5 7.0~7.9 <15 <80 1 <1 5 0.03~0.07
8V2 Z7 8.2 5 7.7~8.7 <15 <80 1 <0.7 5 0.03~0.08
9V1 Z8 9.1 5 8.5~9.6 <15 <100 1 <0.5 6 0.03~0.09
10 Z9 10 5 9.4~10.6 <20 <150 1 <0.2 7 0.03~0.1
11 Y1 11 5 10.4~11.6 <20 <150 1 <0.1 8 0.03~0.11
12 Y2 12 5 11.4~12.7 <25 <150 1 <0.1 8 0.03~0.11
13 Y3 13 5 12.4~14.1 <30 <170 1 <0.1 8 0.03~0.11
15 Y4 15 5 13.8~15.6 <30 <200 1 <0.05 10.5 0.03~0.11
16 Y5 16 5 15.3~17.1 <40 <200 1 <0.05 11.2 0.03~0.11
18 Y6 18 5 16.8~19.1 <45 <225 1 <0.05 12.6 0.03~0.11
20 Y7 20 5 18.8~21.2 <55 <225 1 <0.05 14 0.03~0.11
22 Y8 22 5 20.8~23.3 <55 <250 1 <0.05 15.4 0.04~0.12
24 Y9 24 5 22.8~25.6 <70 <250 1 <0.05 16.8 0.04~0.12
27 Y10 27 5 25.1~28.9 <80 <300 1 <0.05 18.9 0.04~0.12
30 Y11 30 5 28~32 <80 <300 1 <0.05 21 0.04~0.12
33 Y12 33 5 31~35 <80 <325 1 <0.05 23.1 0.04~0.12
36 Y13 36 5 34~38 <90 <350 1 <0.05 25.2 0.04~0.12
39 Y14 39 2.5 37~41 <130 <350 0.5 <0.05 27.3 0.04~0.12
43 Y15 43 2.5 40~46 <150 <375 0.5 <0.05 30.1 0.04~0.12
47 Y16 47 2.5 44~50 <170 <375 0.5 <0.05 32.9 0.04~0.12
51 Y17 51 2.5 48~54 <180 <400 0.5 <0.05 35.7 0.04~0.12
56 Y18 56 2.5 52~60 <200 <425 0.5 <0.05 39.2 0.04~0.12
62 Y19 62 2.5 58~66 <215 <450 0.5 <0.05 43.4 0.04~0.12
68 Y20 68 2.5 64~72 <240 <475 0.5 <0.05 47.6 0.04~0.12
75 Y21 75 2.5 70~79 <255 <500 0.5 <0.05 52.5 0.04~0.12
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BZX84C Series
Characteristics (Tj=25℃ unless otherwise specified)
Figure 1. Diode Capacitance vs. Z-voltage Figure 2. Typical Change of Working Voltage Vs.
Junction Temperature
Figure 3. Typical Change of Working Voltage under
Operating Conditions at Tamb=25℃ Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
Figure 5. Forward Current vs. Forward Voltage Figure 6. Z-Current vs. Z-Voltage
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BZX84C Series
Figure 7. Z-Current vs. Z-Voltage Figure 8. Differential Z-Resistance Vz vs. Z-Voltage
Figure 9. Thermal Response
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BZX84C Series
Dimensions
Style 8:
PIN
1. Anode
2. No connection
3. Cathode
SOT-23 Footprint
Notes:
1. Dimensioning and tolerance per
ANSI Y14.5M, 1982.
2. Controlling dimension: inch.
3. Maximum lead thickness includes lead finish
thickness. Minimum lead thickness is the
minimum thickness of base material.
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