Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 900V
▼ Isolation Full Package RDS(ON) 7.2Ω
▼ Fast Switching Characteristics ID1.9A
▼ RoHS compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.6 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice
1.9
Linear Derating Factor 0.28
AP02N90I
36
±30
1.9
1.2
Pb Free Plating Product
6
34.7
Parameter Rating
900
200418062-1/4
Storage Temperature Range -55 to 150
-55 to 150
Parameter
G
D
S
The TO-220CFM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits. G
DSTO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 900 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.8 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.85A - - 7.2 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=1.9A - 2 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=900V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=720V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±30V - - ±100 nA
QgTotal Gate Charge3ID=1.9A - 12 20 nC
Qgs Gate-Source Charge VDS=540V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 4.7 - nC
td(on) Turn-on Delay Time3VDD=450V - 10 - ns
trRise Time ID=1.9A - 5 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 18 - ns
tfFall Time RD=236Ω-9-
ns
Ciss Input Capacitance VGS=0V - 630 1000 pF
Coss Output Capacitance VDS=25V - 40 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=1.9A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=1.9A, VGS=0V, - 360 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 1.8 - µC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=20mH , RG=25Ω , IAS=1.9A.
3.Pulse width <300us , duty cycle <2%.
AP02N90I
2/4
AP02N90I
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
0.0
0.4
0.8
1.2
1.6
2.0
0369121518
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
VG=4.5V
10V
8.0V
6.0V
5.0V
0.00
0.25
0.50
0.75
1.00
1.25
0369121518
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 10V
8.0V
6.0V
5.0V
VG=4.5V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
I
D=0.85A
VG=10V
0.0
0.5
1.0
1.5
2.0
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
Normalized VGS(th) (V)
0.8
0.9
1.0
1.1
1.2
-50 0 50 100 150
Junction Temperature ( oC)
Normalized BVDSS (V)
AP02N90I
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fi
g
10. Effective Transient Thermal Im
p
edanc
e
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0
2
4
6
8
10
12
14
0481216
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =180V
VDS =360V
VDS =540V
ID=1.9A
1
10
100
1000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.10
1.00
10.00
1 10 100 1000 10000
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
