FK10SM-10 High-Speed Switching Use Nch Power MOS FET REJ03G1380-0200 (Previous: MEJ02G0228-0101) Rev.2.00 Jul 07, 2006 Features * * * * VDSS : 500 V rDS (ON) (max) : 1.13 ID : 10 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P) 2, 4 4 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 3 Applications Servo motor drive, Robot, UPS, Lamp ballast, etc. Maximum Ratings (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Rev.2.00 Jul 07, 2006 page 1 of 6 Symbol VDSS Ratings 500 Unit V VGSS ID IDM IS ISM PD Tch Tstg -- 30 10 30 10 30 125 - 55 to +150 - 55 to +150 4.8 V A A A A W C C g Conditions VGS = 0 V VDS = 0 V Typical value FK10SM-10 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR) DSS V(BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) | yfs | Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Min. 500 30 -- -- 2 -- -- 3.3 -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.88 4.40 5.5 1100 130 20 20 30 95 35 1.5 -- -- Max. -- -- 10 1 4 1.13 5.65 -- -- -- -- -- -- -- -- 2.0 1.00 150 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = 100 A, VDS = 0 V VGS = 25 V, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 5A, VGS = 10 V, RGEN = RGS = 50 IS = 5 A, VGS = 0 V Channel to case IS = 10 A, dis/dt = -100 A/s Performance Curves Power Dissipation Derating Curve Maximum Safe Operating Area 5 3 2 160 Drain Current ID (A) Power Dissipation PD (W) 200 120 80 40 0 0 50 100 150 Case Temperature Tc (C) Rev.2.00 Jul 07, 2006 page 2 of 6 200 tw=10s 101 100s 7 5 3 2 100 7 5 3 2 Tc = 25C Single Pulse DC 10-1 7 5 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Drain-Source Voltage VDS (V) FK10SM-10 Output Characteristics (Typical) Output Characteristics (Typical) VGS = 20V 10V 20 VGS = 20V 10V 6V PD = 125W 10 Tc = 25C Pulse Test 12 8 5V PD = 125W 4 Drain Current ID (A) Drain Current ID (A) 6V 16 8 6 5V 4 Tc = 25C Pulse Test 2 4V 10 20 30 40 50 ID = 20A 24 16 10A 8 5A 4 8 12 16 20 Drain Current ID (A) 20 2.0 Tc = 25C Pulse Test 1.6 VGS = 10V 20V 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Drain Current ID (A) Transfer Characteristics (Typical) Forward Transfer Admittance vs. Drain Current (Typical) Tc = 25C VDS = 50V Pulse Test 16 12 8 4 4 8 12 16 Gate-Source Voltage VGS (V) Rev.2.00 16 Gate-Source Voltage VGS (V) 20 0 12 On-State Resistance vs. Drain Current (Typical) 32 0 8 On-State Voltage vs. Gate-Source Voltage (Typical) Tc = 25C Pulse Test 0 4 Drain-Source Voltage VDS (V) 40 0 0 Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) () 0 0 Jul 07, 2006 page 3 of 6 20 Forward Transfer Admittance | yfs | (S) Drain-Source On-State Voltage VDS(ON) (V) 0 101 7 5 VDS = 10V Pulse Test Tc = 25C 75C 3 2 125C 100 7 5 3 2 10-1 -1 10 2 3 5 7 100 2 3 Drain Current ID (A) 5 7 101 FK10SM-10 Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) Ciss 103 7 5 3 2 Coss 102 7 5 3 2 Crss Tch = 25C 101 f = 1MHz 7 VGS = 0V 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Switching Time (ns) Capacitance C (pF) 2 t d(off) 3 2 tr t d(on) tf 5 7 100 2 3 5 7 101 2 3 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 40 VGS = 0V Pulse Test Source Current IS (A) Tch = 25C ID = 10 A 16 VDS = 100V 200V 12 400V 8 4 0 101 7 5 20 40 60 80 Tc = 125C 24 25C 16 75C 8 0 0.8 1.6 2.4 3.2 4.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) On-State Resistance vs. Channel Temperature (Typical) Threshold Voltage vs. Channel Temperature (Typical) VGS = 10V ID = 5A Pulse Test 3 2 100 7 5 3 2 101 0 32 0 100 50 100 150 200 250 Channel Temperature Tch (C) Jul 07, 2006 page 4 of 6 Gate-Source Threshold Voltage VGS(th) (V) Gate-Source Voltage VGS (V) Drain-Source On-State Resistance rDS(ON) (tC) Drain-Source On-State Resistance rDS(ON) (25C) Rev.2.00 102 7 5 101 10-1 20 0 103 7 Tch = 25C 5 VDD = 200V VGS = 10V 3 RGEN = RGS = 50 2 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 Channel Temperature Tch (C) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 103 7 5 102 7 5 3 2 Channel Temperature Tch (C) t rr 101 7 5 102 7 5 3 2 3 2 Irr 101 7 5 101 2 3 5 7 102 0 Tch = 25C 10 Tch = 150C 7 5 2 3 5 7 103 Source Current dis/dt (-A/s) Transient Thermal Impedance Zth(ch-c) (C/W) 5 IS = 10A VGS = 0V 3 VDD = 250V 2 Reverce Recovery Current Irr (ns) Reverce Recovery Time trr (ns) 3 2 101 7 5 t rr Irr Tch = 25C Tch = 150C 5 7 101 2 3 100 5 7 102 101 7 5 3 2 100 7 5 3 2 D=1 0.5 0.2 0.1 PDM 10-1 7 5 3 2 tw 0.05 0.02 0.01 T D= tw T Single Pulse 10-2 -4 -3 10 2 3 5710 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 Pulse Width tw (s) Switching Waveform Vout Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 2 3 Transient Thermal Impedance Characteristics Switching Time Measurement Circuit Vin Monitor 3 2 Source Current IS (A) Diode Reverse vs. Source Currnet dis/dt Characteristic (Typical) 5 3 2 3 2 101 0 10 150 102 7 5 dis/dt = -100A/s VGS = 0V VDD = 250V Jul 07, 2006 page 5 of 6 Reverce Recovery Current Irr (ns) Diode Reverse vs. Source Currnet Characteristic (Typical) Reverce Recovery Time trr (ns) Drain-Source Breakdown Voltage V(BR)DSS (tC) Drain-Source Breakdown Voltage V(BR)DSS (25C) FK10SM-10 tr 90% td(off) tf FK10SM-10 Package Dimensions JEITA Package Code SC-65 Package Name TO-3P* RENESAS Code PRSS0004ZB-A Previous Code MASS[Typ.] 4.8g Unit: mm 4.5 15.9Max 4 2 3.2 20.0 5.0 1.5 2 19.5Min 4.4 1.0 0.6 2.8 5.45 5.45 4 Ordering Information Lead form Straight type Standard packing Static electricity prevention bag Quantity 200 Standard order code Type name Note: Please confirm the specification about the shipping in detail. Rev.2.00 Jul 07, 2006 page 6 of 6 Standard order code example FK10SM-10 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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