ATF-53189
Enhancement Mode[1] Pseudomorphic HEMT
in SOT 89 Package
Data Sheet
Features
Single voltage operation
High Linearity and Gain
Low Noise Figure
Excellent uniformity in product speci cations
SOT 89 standard package
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-Reel packaging option available
Speci cations
2 GHz, 4.0V, 135 mA (Typ.)
40.0 dBm Output IP3
23.0 dBm Output Power at 1dB gain compression
0.85 dB Noise Figure
15.5 dB Gain
46% PAE at P1dB
LFOM[3] 12.7 dB
Applications
Front-end LNA Q1 and Q2, Driver or Pre-driver Ampli-
er for Cellular/PCS and WCDMA wireless infrastruc-
ture
Driver Ampli er for WLAN, WLL/RLL and MMDS ap-
plications
General purpose discrete E-pHEMT for other high
linearity applications
Notes:
Package marking provides orientation and identi cation:
“3G” = Device Code
“x” = Month code indicates the month of manufacture.
D = Drain
S = Source
G = Gate
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
Description
Avago Technologies’s ATF-53189 is a single-voltage high
linearity, low noise E-pHEMT FET packaged in a low cost
surface mount SOT89 package. The device is ideal as a
high-linearity, low noise, medium-power ampli er. Its
operating frequency range is from 50 MHz to 6 GHz.
ATF-53189 is ideally suited for Cellular/PCS and WCDMA
wireless infrastructure, WLAN, WLL and MMDS application,
and general purpose discrete E-pHEMT ampli ers which
require medium power and high linearity. All devices are
100% RF and DC tested.
Pin Connections and Package Marking
3GX
Top View
RFin GND RFout
#1 #2 #3
Bottom View
RFout GND RFin
#3 #2 #1
2
ATF-53189 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
Vds Drain–Source Voltage[2] V 7
V gs Gate –Source Voltage[2] V -5 to 1.0
V gd
Gate Drain Voltage[2] V -5 to 1.0
Ids
Drain Current[2] mA 300
Igs Gate Current mA 20
Pdiss
Total Power Dissipation[3] W 1.0
Pin max. RF Input Power dBm +24
Tch Channel Temperature °C 150
Tstg Storage Temperature °C -65 to 150
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is
25°C. Derate 14.30 mW/°C for TB > 80°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal Mea-
surement method.
ATF-53189 Electrical Speci cations
TA = 25°C, DC bias for RF parameters is Vds = 4.0V and Ids = 135 mA unless otherwise speci ed.
Symbol Parameters and Test Conditions Units Min. Typ. Max.
Vgs Operational Gate Voltage Vds = 4.0V, Ids = 135 mA V — 0.65 —
Vth Threshold Voltage Vds = 4.0V, Ids = 8 mA V — 0.30 —
Ids Drain to Source Current Vds = 4.0V, Vgs = 0V μA — 3.70 —
Gm Transconductance Vds = 4.0V, Gm = Ids/Vgs; mmho — 650 —
Vgs = Vgs1 – Vgs2
Vgs1 = 0.6V, Vgs2 = 0.55V
Igss Gate Leakage Current Vds = 0V, Vgs = -4V μA -10.0 -0.34 —
NF Noise Figure f=900 MHz dB — 0.80 —
f=2.0 GHz dB — 0.85 1.3
f=2.4 GHz dB — 1.00 —
G Gain[1] f=900 MHz dB — 17.2 —
f=2.0 GHz dB 14.0 15.5 17.0
f=2.4 GHz dB — 15.0 —
OIP3 Output 3rd Order Intercept Point[1] f=900 MHz dBm — 42.0 —
f=2.0 GHz dBm 36.0 40.0 —
f=2.4 GHz dBm — 38.6 —
P1dB Output 1dB Compressed[1] f=900 MHz dBm — 21.7 —
f=2.0 GHz dBm — 23.0 —
f=2.4 GHz dBm — 23.2
PAE Power Added E ciency f=900 MHz % — 33.8 —
f=2.0 GHz % — 46.0 —
f=2.4 GHz % — 49.0
ACLR Adjacent Channel Leakage O set BW = 5 MHz dBc — -54.0 —
Power Ratio[1,2]
O set BW = 10 MHz dBc — -64.0 —
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -8 dBm
- Channel Integrate Bandwidth = 3.84 MHz
Thermal Resistance[2,4]
ch-b = 70°C/W
3
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE and
ACLR measurements. This circuit achieves a trade-o between optimal OIP3, P1dB and VSWR. Circuit
losses have been de-embedded from actual measurements.
Input Output
Output Matching Circuit
Γ_mag=0.40
Γ_ang=120.0°
Input Matching Circuit
Γ_mag=0.74
Γ_ang=-112.4°
DUT
Notes:
1. Distribution data sample size is 500 samples taken from 3 di erent wafers. Future wafers
allocated to this product may have nominal values anywhere between the upper and lower
limits.
2. Measurements are made on production test board, which represents a trade-o between
optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measure-
ments.
Product Consistency Distribution Charts[1,2]
Figure 2. OIP3 @ 2 GHz, 4V, 135 mA.
LSL = 36 dBm, Nominal = 40 dBm.
OIP3 (dBm)
FREQUENCY
36 37 38 39 40 41 42 43 44 45
150
120
90
60
30
0
Stdev=0.86
+3 Std–3 Std
Figure 3. NF @ 2 GHz, 4V, 135 mA.
USL = 1.30 dBm, Nominal = 0.84 dBm.
NF (dB)
FREQUENCY
.5 .6 .7 .8 .9 1 1.1
150
120
90
60
30
0
Stdev=0.08
+3 Std–3 Std
Figure 4. Gain @ 2 GHz, 4V, 135 mA.
LSL = 14 dBm, Nominal = 15.5 dBm,
USL = 17 dBm.
Gain (dB)
FREQUENCY
14.5 15 15.5 16 16.5
150
120
90
60
30
0
Stdev=0.22
+3 Std–3 Std
Figure 5. P1dB @ 2 GHz, 4V, 135 mA.
Nominal = 23 dBm.
P1dB (dBm)
FREQUENCY
19 20 21 22 23 24 25 26
150
120
90
60
30
0
Stdev=1.14
+3 Std–3 Std
4
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury Load Pull System at 4.0V, 135 mA quiesent
bias.
Typical Gammas at Optimum OIP3[1]
Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE
(GHz) Mag Ang (deg) Mag Ang (deg) (dBm) (dB) (dBm) (%)
0.9 0.8179 -143.28 0.0721 124.08 42.0 17.2 21.7 33.8
2.0 0.7411 -112.36 0.4080 119.91 41.6 15.6 23.4 44.2
3.9 0.6875 -94.23 0.4478 174.74 41.3 11.2 23.1 41.4
5.8 0.5204 -75.91 0.3525 -120.13 36.9 5.6 22.4 25.7
Note:
1. Typical describes additional product performance information that is not covered by the product warranty.
Figure 6. Typical IV Curve.
Vds (V)
Ids (mA)
071 2 3 4 5 6
400
350
300
250
200
150
100
50
0
0.5V
0.6V
0.7V
0.8V
0.9V
5
ATF-53189 Typical Performance Curves (at 25°C unless speci ed otherwise)
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
Figure 7. OIP3 vs. Ids and Vds at 900 MHz.
Ids (mA)
OIP3 (dBm)
75 18090 105 120 135 150 165
45
40
35
30
25
20
3V
4V
5V
Figure 8. OIP3 vs. Ids and Vds at 2 GHz.
Ids (mA)
OIP3 (dBm)
75 18090 105 120 135 150 165
45
40
35
30
25
20
3V
4V
5V
Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz.
Ids (mA)
OIP3 (dBm)
75 18090 105 120 135 150 165
45
40
35
30
25
20
3V
4V
5V
Figure 10. Small Signal Gain vs. Ids and Vds
at 900 MHz.
Ids (mA)
GAIN (dB)
75 18090 105 120 135 150 165
19
18
17
16
15
14
13
12
3V
4V
5V
Figure 11. Small Signal Gain vs. Ids and Vds
at 2 GHz.
Ids (mA)
GAIN (dB)
75 18090 105 120 135 150 165
19
18
17
16
15
14
13
12
3V
4V
5V
Figure 12. Small Signal Gain vs. Ids and Vds
at 3.9 GHz.
Ids (mA)
GAIN (dB)
75 18090 105 120 135 150 165
14
12
10
8
6
4
2
0
3V
4V
5V
Figure 13. OIP3 vs. Ids and Vds at 5.8 GHz.
Ids (mA)
OIP3 (dBm)
75 18090 105 120 135 150 165
40
35
30
25
20
3V
4V
5V
Figure 14. Small Signal Gain vs. Ids and Vds
at 5.8 GHz.
Ids (mA)
GAIN (dB)
75 18090 105 120 135 150 165
8
6
4
2
0
3V
4V
5V
Figure 15. Small Signal Gain/Pout/PAE vs.
Pin at Vds=3V and Freq = 900 MHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-14 10-10 -6 -2 2 6
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
6
Figure 16. Small Signal Gain/Pout/PAE vs.
Pin at Vds=4V and Freq = 900 MHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-14 10-10 -6 -2 2 6
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_4V
Pout_4V
PAE_4V
Figure 17. Small Signal Gain/Pout/PAE vs.
Pin at Vds=5V and Freq = 900 MHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-14 10-10 -6 -2 2 6
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_5V
Pout_5V
PAE_5V
Figure 18. Small Signal Gain/Pout/PAE vs.
Pin at Vds=3V and Freq = 2 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE
(
%
)
-10 14-6 -2 2 6 10
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Figure 19. Small Signal Gain/Pout/PAE vs.
Pin at Vds=4V and Freq = 2 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-10 14-6 -2 2 6 10
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_4V
Pout_4V
PAE_4V
Figure 20. Small Signal Gain/Pout/PAE vs.
Pin at Vds=5V and Freq = 2 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-10 14-6 -2 2 6 10
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_5V
Pout_5V
PAE_5V
Figure 21. Small Signal Gain/Pout/PAE vs.
Pin at Vds=3V and Freq = 3.9 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE
(
%
)
-10 18-6 -2 2 6 10 14
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Figure 22. Small Signal Gain/Pout/PAE vs.
Pin at Vds=4V and Freq = 3.9 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-10 18-6 -2 2 6 10 14
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_4V
Pout_4V
PAE_4V
Figure 21. Small Signal Gain/Pout/PAE vs.
Pin at Vds=5V and Freq = 3.9 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-10 18-6 -2 2 6 10 14
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_5V
Pout_5V
PAE_5V
Figure 24. Small Signal Gain/Pout/PAE vs.
Pin at Vds=3V and Freq = 5.8 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-6 22-2 2 6 10 14 18
30
25
20
15
10
5
0
30
25
20
15
10
5
0
Gain_3V
Pout_3V
PAE_3V
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
ATF-53189 Typical Performance Curves (at 25°C unless speci ed otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
7
ATF-53189 Typical Performance Curves, continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA, Over Temperature and Frequency
Figure 25. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4V and Freq = 5.8 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-6 22-2 2 6 10 14 18
30
25
20
15
10
5
0
30
25
20
15
10
5
0
Gain_4V
Pout_4V
PAE_4V
Figure 26. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 5V and Freq = 5.8 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-6 22-2 2 6 10 14 18
30
25
20
15
10
5
0
30
25
20
15
10
5
0
Gain_5V
Pout_5V
PAE_5V
ATF-53189 Typical Performance Curves (at 25°C unless speci ed otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
Figure 27. OIP3 vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
OIP3 (dBm)
0.5 6.51.5 2.5 3.5 4.5 5.5
46
44
42
40
38
36
34
-40°C
25°C
80°C
Figure 28. Gain vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
GAIN (dB)
0.5 6.51.5 2.5 3.5 4.5 5.5
18
16
14
12
10
10
8
6
4
-40°C
25°C
80°C
Figure 29. PAE vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
PAE (%)
0.5 6.51.5 2.5 3.5 4.5 5.5
50
45
40
35
30
25
20
-40°C
25°C
80°C
Figure 30. P1dB vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
P1dB (dBm)
0.5 6.51.5 2.5 3.5 4.5 5.5
25
24
23
22
21
20
-40°C
25°C
80°C
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
8
ATF-53189 Typical Performance Curves (at 25°C unless speci ed otherwie), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
Figure 31. OIP3 vs. Ids and Vds at 2.4 GHz.
Ids (mA)
OIP3 (dBm)
75 18090 105 120 135 150 165
45
40
35
30
25
20
3V
4V
5V
Figure 32. Small Signal Gain vs. Ids and Vds
at 2.4 GHz.
Ids (mA)
GAIN (dB)
18
17
16
15
14
13
12
11
75 18090 105 120 135 150 165
3V
4V
5V
Figure 33. Small Signal Gain/Pout/PAE vs.
Pin at Vds 3V and Freq = 2.4 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-10 14-6 -2 2 6 10
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Figure 34. Small Signal Gain/Pout/PAE vs.
Pin at Vds 4V and Freq = 2.4 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-10 14-6 -2 2 6 10
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_4V
Pout_4V
PAE_4V
Figure 35. Small Signal Gain/Pout/PAE vs.
Pin at Vds 5V and Freq = 2.4 GHz.
Pin (dBm)
GAIN (dB) & Pout (dBm)
PAE (%)
-10 14-6 -2 2 6 10
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_5V
Pout_5V
PAE_5V
9
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 180 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.544 -133.2 31.0 35.531 110.9 -37.7 0.013 31.7 0.692 -163.7 34.4
0.2 0.704 -158.7 25.6 19.023 97.1 -37.1 0.014 25.2 0.738 -173.2 31.3
0.3 0.777 -169.4 22.2 12.872 90.4 -36.5 0.015 24.9 0.749 -177.6 29.3
0.4 0.813 -176.1 19.7 9.705 85.7 -35.9 0.016 26.3 0.752 179.3 27.8
0.5 0.856 178.5 17.7 7.687 84.4 -35.4 0.017 30.4 0.756 175.7 26.6
0.6 0.866 174.5 16.2 6.438 81.7 -34.9 0.018 32.6 0.755 173.5 25.5
0.7 0.872 170.9 14.9 5.582 79.2 -34.4 0.019 34.5 0.755 171.4 24.7
0.8 0.874 167.5 13.9 4.939 76.5 -33.6 0.021 35.9 0.753 169.4 23.7
0.9 0.876 164.1 12.9 4.433 73.8 -33.2 0.022 36.8 0.755 167.5 23.0
1.0 0.880 161.0 12.1 4.026 70.9 -32.4 0.024 37.1 0.753 165.6 22.2
1.5 0.881 150.2 9.3 2.910 59.6 -30.5 0.030 35.8 0.753 158.4 19.2
2.0 0.882 137.1 6.5 2.123 45.9 -28.6 0.037 31.0 0.752 150.1 16.0
2.5 0.879 124.9 4.3 1.647 33.4 -27.3 0.043 25.0 0.768 142.3 13.4
3.0 0.874 112.7 2.3 1.304 21.1 -26.6 0.047 18.3 0.766 135.5 11.5
3.5 0.882 99.5 0.5 1.062 11.3 -26.0 0.050 12.6 0.773 131.8 10.0
4.0 0.889 92.6 -0.7 0.921 1.5 -25.8 0.051 7.1 0.779 123.3 9.4
5.0 0.903 78.2 -3.5 0.669 -19.8 -25.2 0.055 -5.3 0.793 102.9 7.0
6.0 0.918 61.3 -5.8 0.515 -41.5 -25.7 0.052 -22.4 0.806 84.7 5.2
7.0 0.948 41.2 -8.2 0.389 -59.6 -26.0 0.050 -39.5 0.809 69.9 3.2
8.0 0.960 24.3 -10.2 0.308 -79.9 -26.7 0.046 -55.9 0.844 54.6 2.1
9.0 0.941 11.8 -12.4 0.239 -100.5 -28.4 0.038 -73.5 0.882 37.0 1.4
10.0 0.946 10.8 -14.6 0.187 -109.4 -31.1 0.028 -81.6 0.896 27.1 0.1
11.0 0.937 0.3 -16.0 0.158 -124.9 -34.4 0.019 -108.3 0.872 20.3 -1.8
12.0 0.914 -8.0 -17.7 0.131 -138.0 -46.0 0.005 -147.3 0.916 7.0 -1.3
13.0 0.951 -12.1 -19.2 0.110 -153.4 -40.0 0.010 71.0 0.877 -1.1 -4.4
14.0 0.948 -20.6 -21.0 0.089 -168.9 -37.1 0.014 30.2 0.882 -7.5 -6.3
15.0 0.939 -23.6 -21.4 0.085 177.8 -39.2 0.011 -4.9 0.865 -19.2 -7.2
16.0 0.948 -23.1 -21.1 0.088 165.9 -37.7 0.013 -8.8 0.864 -26.2 -6.9
17.0 0.947 -24.3 -18.9 0.114 155.2 -41.9 0.008 -173.5 0.856 -33.6 -4.7
18.0 0.903 -32.5 -17.1 0.140 133.4 -35.4 0.017 161.7 0.835 -42.5 -3.2
Figure 36. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/180 mA.
FREQUENCY (GHz)
MSG/MAG & |S21|
2
(dB)
0182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
MSG
MAG
S21
Freq
GHz
Fmin
dB
Gamma Opt Rn/50 Ga
dB
Mag Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.65
0.76
0.79
0.86
0.94
1.00
1.10
1.17
1.41
1.53
1.56
1.72
1.87
2.03
2.18
0.394
0.417
0.423
0.465
0.509
0.545
0.600
0.645
0.777
0.840
0.855
0.920
0.970
0.993
0.997
163.6
172.4
175.3
-165.4
-147.7
-134.6
-116.7
-103.3
-70.0
-56.1
-52.9
-39.0
-27.5
-19.1
-7.5
0.11
0.09
0.08
0.08
0.06
0.08
0.16
0.28
0.35
0.41
0.42
0.51
0.97
1.88
2.54
25.82
21.83
21.71
18.70
17.63
16.45
14.90
13.53
11.35
10.31
10.38
9.79
7.91
6.11
4.56
10
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 135 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.544 -133.2 31.0 35.531 110.9 -37.7 0.013 31.7 0.692 -163.7 34.4
0.2 0.704 -158.7 25.6 19.023 97.1 -37.1 0.014 25.2 0.738 -173.2 31.3
0.3 0.777 -169.4 22.2 12.872 90.4 -36.5 0.015 24.9 0.749 -177.6 29.3
0.4 0.813 -176.1 19.7 9.705 85.7 -35.9 0.016 26.3 0.752 179.3 27.8
0.5 0.856 178.5 17.7 7.687 84.4 -35.4 0.017 30.4 0.756 175.7 26.6
0.6 0.866 174.5 16.2 6.438 81.7 -34.9 0.018 32.6 0.755 173.5 25.5
0.7 0.872 170.9 14.9 5.582 79.2 -34.4 0.019 34.5 0.755 171.4 24.7
0.8 0.874 167.5 13.9 4.939 76.5 -33.6 0.021 35.9 0.753 169.4 23.7
0.9 0.876 164.1 12.9 4.433 73.8 -33.2 0.022 36.8 0.755 167.5 23.0
1.0 0.880 161.0 12.1 4.026 70.9 -32.4 0.024 37.1 0.753 165.6 22.2
1.5 0.881 150.2 9.3 2.910 59.6 -30.5 0.030 35.8 0.753 158.4 19.2
2.0 0.882 137.1 6.5 2.123 45.9 -28.6 0.037 31.0 0.752 150.1 16.0
2.5 0.879 124.9 4.3 1.647 33.4 -27.3 0.043 25.0 0.768 142.3 13.4
3.0 0.874 112.7 2.3 1.304 21.1 -26.6 0.047 18.3 0.766 135.5 11.5
3.5 0.882 99.5 0.5 1.062 11.3 -26.0 0.050 12.6 0.773 131.8 10.0
4.0 0.889 92.6 -0.7 0.921 1.5 -25.8 0.051 7.1 0.779 123.3 9.4
5.0 0.903 78.2 -3.5 0.669 -19.8 -25.2 0.055 -5.3 0.793 102.9 7.0
6.0 0.918 61.3 -5.8 0.515 -41.5 -25.7 0.052 -22.4 0.806 84.7 5.2
7.0 0.948 41.2 -8.2 0.389 -59.6 -26.0 0.050 -39.5 0.809 69.9 3.2
8.0 0.960 24.3 -10.2 0.308 -79.9 -26.7 0.046 -55.9 0.844 54.6 2.1
9.0 0.941 11.8 -12.4 0.239 -100.5 -28.4 0.038 -73.5 0.882 37.0 1.4
10.0 0.946 10.8 -14.6 0.187 -109.4 -31.1 0.028 -81.6 0.896 27.1 0.1
11.0 0.937 0.3 -16.0 0.158 -124.9 -34.4 0.019 -108.3 0.872 20.3 -1.8
12.0 0.914 -8.0 -17.7 0.131 -138.0 -46.0 0.005 -147.3 0.916 7.0 -1.3
13.0 0.951 -12.1 -19.2 0.110 -153.4 -40.0 0.010 71.0 0.877 -1.1 -4.4
14.0 0.948 -20.6 -21.0 0.089 -168.9 -37.1 0.014 30.2 0.882 -7.5 -6.3
15.0 0.939 -23.6 -21.4 0.085 177.8 -39.2 0.011 -4.9 0.865 -19.2 -7.2
16.0 0.948 -23.1 -21.1 0.088 165.9 -37.7 0.013 -8.8 0.864 -26.2 -6.9
17.0 0.947 -24.3 -18.9 0.114 155.2 -41.9 0.008 -173.5 0.856 -33.6 -4.7
18.0 0.903 -32.5 -17.1 0.140 133.4 -35.4 0.017 161.7 0.835 -42.5 -3.2
Figure 37. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/135 mA.
FREQUENCY (GHz)
MSG/MAG & |S21|
2
(dB)
0182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MAG
MSG
Freq
GHz
Fmin
dB
Gamma Opt Rn/50 Ga
dB
Mag Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.30
0.41
0.44
0.53
0.62
0.69
0.80
0.89
1.16
1.31
1.34
1.52
1.71
1.89
2.07
0.162
0.291
0.302
0.369
0.433
0.484
0.556
0.613
0.764
0.832
0.848
0.914
0.963
0.991
0.998
150.8
161.3
164.2
-174.2
-154.6
-140.2
-120.6
-106.1
-71.0
-56.6
-53.4
-39.3
-27.9
-18.2
-9.2
0.05
0.05
0.05
0.04
0.04
0.05
0.10
0.19
0.26
0.30
0.30
0.39
0.77
0.96
1.58
26.27
22.12
22.02
18.95
17.05
15.87
14.63
13.21
11.19
10.26
10.04
9.64
8.68
6.57
4.51
11
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 75 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.544 -133.2 31.0 35.531 110.9 -37.7 0.013 31.7 0.692 -163.7 34.4
0.2 0.704 -158.7 25.6 19.023 97.1 -37.1 0.014 25.2 0.738 -173.2 31.3
0.3 0.777 -169.4 22.2 12.872 90.4 -36.5 0.015 24.9 0.749 -177.6 29.3
0.4 0.813 -176.1 19.7 9.705 85.7 -35.9 0.016 26.3 0.752 179.3 27.8
0.5 0.856 178.5 17.7 7.687 84.4 -35.4 0.017 30.4 0.756 175.7 26.6
0.6 0.866 174.5 16.2 6.438 81.7 -34.9 0.018 32.6 0.755 173.5 25.5
0.7 0.872 170.9 14.9 5.582 79.2 -34.4 0.019 34.5 0.755 171.4 24.7
0.8 0.874 167.5 13.9 4.939 76.5 -33.6 0.021 35.9 0.753 169.4 23.7
0.9 0.876 164.1 12.9 4.433 73.8 -33.2 0.022 36.8 0.755 167.5 23.0
1.0 0.880 161.0 12.1 4.026 70.9 -32.4 0.024 37.1 0.753 165.6 22.2
1.5 0.881 150.2 9.3 2.910 59.6 -30.5 0.030 35.8 0.753 158.4 19.2
2.0 0.882 137.1 6.5 2.123 45.9 -28.6 0.037 31.0 0.752 150.1 16.0
2.5 0.879 124.9 4.3 1.647 33.4 -27.3 0.043 25.0 0.768 142.3 13.4
3.0 0.874 112.7 2.3 1.304 21.1 -26.6 0.047 18.3 0.766 135.5 11.5
3.5 0.882 99.5 0.5 1.062 11.3 -26.0 0.050 12.6 0.773 131.8 10.0
4.0 0.889 92.6 -0.7 0.921 1.5 -25.8 0.051 7.1 0.779 123.3 9.4
5.0 0.903 78.2 -3.5 0.669 -19.8 -25.2 0.055 -5.3 0.793 102.9 7.0
6.0 0.918 61.3 -5.8 0.515 -41.5 -25.7 0.052 -22.4 0.806 84.7 5.2
7.0 0.948 41.2 -8.2 0.389 -59.6 -26.0 0.050 -39.5 0.809 69.9 3.2
8.0 0.960 24.3 -10.2 0.308 -79.9 -26.7 0.046 -55.9 0.844 54.6 2.1
9.0 0.941 11.8 -12.4 0.239 -100.5 -28.4 0.038 -73.5 0.882 37.0 1.4
10.0 0.946 10.8 -14.6 0.187 -109.4 -31.1 0.028 -81.6 0.896 27.1 0.1
11.0 0.937 0.3 -16.0 0.158 -124.9 -34.4 0.019 -108.3 0.872 20.3 -1.8
12.0 0.914 -8.0 -17.7 0.131 -138.0 -46.0 0.005 -147.3 0.916 7.0 -1.3
13.0 0.951 -12.1 -19.2 0.110 -153.4 -40.0 0.010 71.0 0.877 -1.1 -4.4
14.0 0.948 -20.6 -21.0 0.089 -168.9 -37.1 0.014 30.2 0.882 -7.5 -6.3
15.0 0.939 -23.6 -21.4 0.085 177.8 -39.2 0.011 -4.9 0.865 -19.2 -7.2
16.0 0.948 -23.1 -21.1 0.088 165.9 -37.7 0.013 -8.8 0.864 -26.2 -6.9
17.0 0.947 -24.3 -18.9 0.114 155.2 -41.9 0.008 -173.5 0.856 -33.6 -4.7
18.0 0.903 -32.5 -17.1 0.140 133.4 -35.4 0.017 161.7 0.835 -42.5 -3.2
Figure 38. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/75 mA.
FREQUENCY (GHz)
MSG/MAG & |S21|
2
(dB)
0182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
-30
S21
MAG
MSG
Freq
GHz
Fmin
dB
Gamma Opt Rn/50 Ga
dB
Mag Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.32
0.41
0.43
0.49
0.56
0.61
0.69
0.75
0.95
1.05
1.08
1.21
1.34
1.47
1.60
0.175
0.224
0.235
0.306
0.375
0.428
0.507
0.569
0.738
0.814
0.831
0.907
0.961
0.992
0.996
127.6
143.8
148.3
173.6
-163.6
-147.2
-125.3
-109.3
-72.0
-57.4
-54.2
-40.5
-29.3
-19.3
-8.9
0.05
0.04
0.03
0.03
0.03
0.04
0.08
0.14
0.20
0.24
0.24
0.30
0.60
0.71
1.01
26.45
21.98
21.50
18.55
16.33
15.18
13.86
12.68
10.81
10.64
9.97
9.25
7.78
6.96
4.46
12
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 5.0V, IDS = 135 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.544 -133.2 31.0 35.531 110.9 -37.7 0.013 31.7 0.692 -163.7 34.4
0.2 0.704 -158.7 25.6 19.023 97.1 -37.1 0.014 25.2 0.738 -173.2 31.3
0.3 0.777 -169.4 22.2 12.872 90.4 -36.5 0.015 24.9 0.749 -177.6 29.3
0.4 0.813 -176.1 19.7 9.705 85.7 -35.9 0.016 26.3 0.752 179.3 27.8
0.5 0.856 178.5 17.7 7.687 84.4 -35.4 0.017 30.4 0.756 175.7 26.6
0.6 0.866 174.5 16.2 6.438 81.7 -34.9 0.018 32.6 0.755 173.5 25.5
0.7 0.872 170.9 14.9 5.582 79.2 -34.4 0.019 34.5 0.755 171.4 24.7
0.8 0.874 167.5 13.9 4.939 76.5 -33.6 0.021 35.9 0.753 169.4 23.7
0.9 0.876 164.1 12.9 4.433 73.8 -33.2 0.022 36.8 0.755 167.5 23.0
1.0 0.880 161.0 12.1 4.026 70.9 -32.4 0.024 37.1 0.753 165.6 22.2
1.5 0.881 150.2 9.3 2.910 59.6 -30.5 0.030 35.8 0.753 158.4 19.2
2.0 0.882 137.1 6.5 2.123 45.9 -28.6 0.037 31.0 0.752 150.1 16.0
2.5 0.879 124.9 4.3 1.647 33.4 -27.3 0.043 25.0 0.768 142.3 13.4
3.0 0.874 112.7 2.3 1.304 21.1 -26.6 0.047 18.3 0.766 135.5 11.5
3.5 0.882 99.5 0.5 1.062 11.3 -26.0 0.050 12.6 0.773 131.8 10.0
4.0 0.889 92.6 -0.7 0.921 1.5 -25.8 0.051 7.1 0.779 123.3 9.4
5.0 0.903 78.2 -3.5 0.669 -19.8 -25.2 0.055 -5.3 0.793 102.9 7.0
6.0 0.918 61.3 -5.8 0.515 -41.5 -25.7 0.052 -22.4 0.806 84.7 5.2
7.0 0.948 41.2 -8.2 0.389 -59.6 -26.0 0.050 -39.5 0.809 69.9 3.2
8.0 0.960 24.3 -10.2 0.308 -79.9 -26.7 0.046 -55.9 0.844 54.6 2.1
9.0 0.941 11.8 -12.4 0.239 -100.5 -28.4 0.038 -73.5 0.882 37.0 1.4
10.0 0.946 10.8 -14.6 0.187 -109.4 -31.1 0.028 -81.6 0.896 27.1 0.1
11.0 0.937 0.3 -16.0 0.158 -124.9 -34.4 0.019 -108.3 0.872 20.3 -1.8
12.0 0.914 -8.0 -17.7 0.131 -138.0 -46.0 0.005 -147.3 0.916 7.0 -1.3
13.0 0.951 -12.1 -19.2 0.110 -153.4 -40.0 0.010 71.0 0.877 -1.1 -4.4
14.0 0.948 -20.6 -21.0 0.089 -168.9 -37.1 0.014 30.2 0.882 -7.5 -6.3
15.0 0.939 -23.6 -21.4 0.085 177.8 -39.2 0.011 -4.9 0.865 -19.2 -7.2
16.0 0.948 -23.1 -21.1 0.088 165.9 -37.7 0.013 -8.8 0.864 -26.2 -6.9
17.0 0.947 -24.3 -18.9 0.114 155.2 -41.9 0.008 -173.5 0.856 -33.6 -4.7
18.0 0.903 -32.5 -17.1 0.140 133.4 -35.4 0.017 161.7 0.835 -42.5 -3.2
Figure 39. MSG/MAG & |S21|2 vs. and
Frequency at 5.0V/135 mA.
FREQUENCY (GHz)
MSG/MAG & |S21|
2
(dB)
0182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MAG
MSG
Freq
GHz
Fmin
dB
Gamma Opt Rn/50 Ga
dB
Mag Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.36
0.46
0.49
0.59
0.69
0.77
0.88
0.98
1.28
1.44
1.48
1.68
1.88
2.08
2.28
0.266
0.315
0.327
0.388
0.448
0.495
0.563
0.617
0.764
0.830
0.845
0.912
0.960
0.988
0.994
149.9
162.4
165.6
-172.7
-153.0
-138.6
-116.3
-104.9
-70.5
-56.5
-53.4
-39.7
-28.3
-18.3
-8.5
0.05
0.04
0.04
0.04
0.04
0.06
0.12
0.21
0.31
0.37
0.38
0.42
0.84
1.24
1.78
26.51
22.79
22.09
18.92
17.04
15.87
14.50
13.11
11.19
10.10
10.08
9.39
8.78
8.05
4.74
13
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 3.0V, IDS = 135 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.544 -133.2 31.0 35.531 110.9 -37.7 0.013 31.7 0.692 -163.7 34.4
0.2 0.704 -158.7 25.6 19.023 97.1 -37.1 0.014 25.2 0.738 -173.2 31.3
0.3 0.777 -169.4 22.2 12.872 90.4 -36.5 0.015 24.9 0.749 -177.6 29.3
0.4 0.813 -176.1 19.7 9.705 85.7 -35.9 0.016 26.3 0.752 179.3 27.8
0.5 0.856 178.5 17.7 7.687 84.4 -35.4 0.017 30.4 0.756 175.7 26.6
0.6 0.866 174.5 16.2 6.438 81.7 -34.9 0.018 32.6 0.755 173.5 25.5
0.7 0.872 170.9 14.9 5.582 79.2 -34.4 0.019 34.5 0.755 171.4 24.7
0.8 0.874 167.5 13.9 4.939 76.5 -33.6 0.021 35.9 0.753 169.4 23.7
0.9 0.876 164.1 12.9 4.433 73.8 -33.2 0.022 36.8 0.755 167.5 23.0
1.0 0.880 161.0 12.1 4.026 70.9 -32.4 0.024 37.1 0.753 165.6 22.2
1.5 0.881 150.2 9.3 2.910 59.6 -30.5 0.030 35.8 0.753 158.4 19.2
2.0 0.882 137.1 6.5 2.123 45.9 -28.6 0.037 31.0 0.752 150.1 16.0
2.5 0.879 124.9 4.3 1.647 33.4 -27.3 0.043 25.0 0.768 142.3 13.4
3.0 0.874 112.7 2.3 1.304 21.1 -26.6 0.047 18.3 0.766 135.5 11.5
3.5 0.882 99.5 0.5 1.062 11.3 -26.0 0.050 12.6 0.773 131.8 10.0
4.0 0.889 92.6 -0.7 0.921 1.5 -25.8 0.051 7.1 0.779 123.3 9.4
5.0 0.903 78.2 -3.5 0.669 -19.8 -25.2 0.055 -5.3 0.793 102.9 7.0
6.0 0.918 61.3 -5.8 0.515 -41.5 -25.7 0.052 -22.4 0.806 84.7 5.2
7.0 0.948 41.2 -8.2 0.389 -59.6 -26.0 0.050 -39.5 0.809 69.9 3.2
8.0 0.960 24.3 -10.2 0.308 -79.9 -26.7 0.046 -55.9 0.844 54.6 2.1
9.0 0.941 11.8 -12.4 0.239 -100.5 -28.4 0.038 -73.5 0.882 37.0 1.4
10.0 0.946 10.8 -14.6 0.187 -109.4 -31.1 0.028 -81.6 0.896 27.1 0.1
11.0 0.937 0.3 -16.0 0.158 -124.9 -34.4 0.019 -108.3 0.872 20.3 -1.8
12.0 0.914 -8.0 -17.7 0.131 -138.0 -46.0 0.005 -147.3 0.916 7.0 -1.3
13.0 0.951 -12.1 -19.2 0.110 -153.4 -40.0 0.010 71.0 0.877 -1.1 -4.4
14.0 0.948 -20.6 -21.0 0.089 -168.9 -37.1 0.014 30.2 0.882 -7.5 -6.3
15.0 0.939 -23.6 -21.4 0.085 177.8 -39.2 0.011 -4.9 0.865 -19.2 -7.2
16.0 0.948 -23.1 -21.1 0.088 165.9 -37.7 0.013 -8.8 0.864 -26.2 -6.9
17.0 0.947 -24.3 -18.9 0.114 155.2 -41.9 0.008 -173.5 0.856 -33.6 -4.7
18.0 0.903 -32.5 -17.1 0.140 133.4 -35.4 0.017 161.7 0.835 -42.5 -3.2
Figure 40. MSG/MAG & |S21|2 vs. and
Frequency at 3.0V/135 mA.
FREQUENCY (GHz)
MSG/MAG & |S21|
2
(dB)
0182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MAG
MSG
Freq
GHz
Fmin
dB
Gamma Opt Rn/50 Ga
dB
Mag Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.34
0.43
0.45
0.53
0.61
0.68
0.78
0.86
1.10
1.24
1.27
1.43
1.60
1.76
1.93
0.225
0.282
0.296
0.362
0.427
0.478
0.551
0.608
0.763
0.832
0.848
0.915
0.964
0.991
0.995
146.2
157.0
160.2
-177.0
-156.3
-141.3
-121.1
-106.2
-70.8
-56.6
-53.5
-39.7
-28.4
-18.5
-8.6
0.05
0.04
0.04
0.03
0.03
0.05
0.09
0.17
0.24
0.28
0.30
0.38
0.74
0.95
1.55
26.30
22.19
22.07
19.00
17.13
15.89
14.59
13.17
11.22
10.16
9.93
9.57
8.78
7.27
3.39
14
Ordering Information
Part Number No. of Devices Container
ATF-53189-TR1 3000 13” Reel
ATF-53189-BLK 100 Anti-static bag
Device Models, PCB Layout and Stencil Device
Refer to Avago’s Web Site: www.avagotech.com/view/rf
SOT89 Package Dimensions
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES
SYMBOLS MIN NOM MAX MIN NOM MAX
A 1.40 1.50 1.60 0.055 0.059 0.063
L 0.89 1.04 1.20 0.0350 0.041 0.047
b 0.36 0.42 0.48 0.014 0.016 0.018
b1 0.41 0.47 0.53 0.016 0.018 0.030
C 0.38 0.40 0.43 0.014 0.015 0.017
D 4.40 4.50 4.60 0.173 0.177 0.181
D1 1.40 1.60 1.75 0.055 0.062 0.069
E 3.94 - 4.25 0.155 - 0.167
E1 2.40 2.50 2.60 0.094 0.098 0.102
e1 2.90 3.00 3.10 0.114 0.118 0.122
H 0.35 0.40 0.45 0.014 0.016 0.018
S 0.65 0.75 0.85 0.026 0.030 0.034
e 1.40 1.50 1.60 0.054 0.059 0.063
MATTE FINISH
POLISH
POLISH
D
D1
H
E1
E
L
b
e
e1S
C
b1 b
A
OR
15
Device Orientation
Tape Dimensions
DIMENSIONS IN MM
NOTES:
1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE ±0.2
2. CAMBER IN COMPLIANCE WITH EIA 481
3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED
AS TRUE POSITION OF POCKET, NOT POCKET HOLE
12.0 ± .3
Ao = 4.60
Bo = 4.90
Ko = 1.90
5.50 ± .05
SEE NOTE 3
1.75 ± .10
8.00
Ø 1.5 +0.1/-0.0
2.00 ± .05 SEE NOTE 3
4.00 SEE NOTE 1
SECTION A - A
Ø 1.50 MIN.
Ao
Ko R 0.3 TYP.
R 0.3 MAX.
0.30 ± .05
A
A
Bo
USER FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
2GX
2GX
2GX
2GX
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3893EN
AV02-0051EN - August 1, 2012
Reel Dimensions – 13” Reel
Ø 20.2
MIN
2.0 ± 0.5
Ø 13.0 +0.5
-0.2
102.0
REF
330.0
REF
8.4
(MEASURED AT HUB)
(MEASURED AT HUB)
"A"
ATTENTION
Electrostatic Sensitive Devices
Safe Handling Required
MINNEAPOLIS USA
U.S PAT 4726534
R
LOKREEL R
11.1 MAX.
Detail "A"
Detail "B"
PS
6
6
PS
1.5
88 REF
96.5
+0.3
- 0.2
Dimensions in mm
