FZT653
Document Number DS33150 Rev. 6 - 2
1 of 7
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April 2016
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FZT653
100V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223
Features
BVCEO > 100V
IC = 2A High Continuous Current
ICM = 6A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < 300mV @ 1A
Complementary PNP Type: FZT753
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Notes 4 & 5)
Product
Compliance
Reel Size (inches)
Tape Width (mm)
Quantity per Peel
FZT653TA
AEC-Q101
7
12
1,000
FZT653QTA
Automotive
7
12
1,000
FZT653TC
AEC-Q101
13
12
4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
SOT223
Top View
Device Symbol
Top View
Pin-Out
C
E
B
C
E
C
B
YWW
FZT
653
FZT 653 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 6 = 2016)
WW or WW = Week Code (01 to 53)
Green
FZT653
Document Number DS33150 Rev. 6 - 2
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FZT653
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
2
A
Peak Pulse Current
ICM
6
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
3
W
(Note 7)
2
(Note 8)
1.6
(Note 9)
1.2
Thermal Resistance, Junction to Ambient
(Note 6)
RJA
41.7
°C/W
(Note 7)
62.5
(Note 8)
78.1
(Note 9)
104
Thermal Resistance Junction to Lead
(Note 10)
RJL
12.9
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 11)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 6. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper.
8. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
9. Same as Note 6, except the device is mounted on minimum recommended pad layout.
10. Thermal resistance from junction to solder-point (at the end of the collector lead).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT653
Document Number DS33150 Rev. 6 - 2
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FZT653
Thermal Characteristics and Derating Information
100μ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60
70
110
10m
100m
1
10
110
10m
100m
1
10
Tamb=25
25mm x 25mm
2oz FR4
VCE(sat)
Limit
100
1ms
10ms
100ms
1s
DC
Safe Operating Area
IC Collector Current (A)
VCE Collector-Emitter Voltage (V)
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
50mm x 50mm
2oz FR-4
25mm x 25mm
2oz FR-4
Derating Curve
Temperature (oC)
Max Power Dissipation (W)
100μ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
Tamb=25oC
25mm x 25mm
2oz FR-4
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (oC/W)
Pulse Width (s)
100μ 1m 10m 100m 110 100 1k
1
10
100
25mm x 25mm
2oz FR-4
50mm x 50mm
2oz FR-4
Safe Operating Area
Single Pulse
Tamb=25oC
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
Tamb=25oC
50mm x 50mm
2oz FR-4
Transient Thermal Impedance
Pulse Width (s)
Thermal Resistance (oC/W)
Tamb=25
50mm x 50mm
2oz FR4 100
1ms
10ms
100ms
1s
DC
VCE(sat)
Limit
VCE Collector-Emitter Voltage (V)
IC Collector Current (A)
100
100
100
FZT653
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
120
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 12)
BVCEO
100
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
7
V
IE = 100µA
Collector Cut-Off Current
ICBO

< 1
100
nA
VCB = 100V


10
µA
VCB = 100V, TA = +125°C
Emitter Cut-Off Current
IEBO
< 1
100
nA
VEB = 5.6V
Collector-Emitter Saturation Voltage (Note 12)
VCE(SAT)
0.13
0.3
V
IC = 1A, IB = 100mA

0.23
0.5
IC = 2A, IB = 200mA
Base-Emitter Saturation Voltage (Note 12)
VBE(SAT)
0.9
1.25
V
IC = 1A, IB = 100mA
Base-Emitter Turn-On Voltage (Note 12)
VBE(ON)
0.8
1.0
V
IC = 1A, VCE = 2V
DC Current Gain (Note 12)
hFE
70
200
IC = 50mA, VCE = 2V
100
200
300
IC = 500mA, VCE = 2V
55
110

IC = 1A, VCE = 2V
25
55

IC = 2A, VCE = 2V
Current Gain-Bandwidth Product
fT
140
175
MHz
VCE = 5V, IC = 100mA,
f = 100MHz
Switching Times
tON

80
ns
IC = 500mA, VCC = 10V,
IB1 = -IB2 = 50mA
tOFF

1200
Output Capacitance
COBO
30
pF
VCB = 10V, f = 1MHz
Note: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
FZT653
Document Number DS33150 Rev. 6 - 2
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© Diodes Incorporated
FZT653
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FZT653
Document Number DS33150 Rev. 6 - 2
6 of 7
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© Diodes Incorporated
FZT653
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between terminals.
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
D
b
e
e1
b1
C
E1
L
-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
FZT653
Document Number DS33150 Rev. 6 - 2
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FZT653
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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