RGF1A thru RGF1M
Document Number 88697
10-Aug-05
Vishay General Semiconductor
www.vishay.com
1
P
a
t
e
n
t
e
d
*
®
DO-214BA (GF1)
* Glass-plastic encapsulation
technique is covered by patent
No. 3,996,602, brazed-lead
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
Surface Mount Glass Passivated Junction Fast
Switching Rectifier
Major Ratings and Characteristics
IF(AV) 1.0 A
VRRM 50 V to 1000 V
IFSM 30 A
VF1.3 V
trr 150 ns, 250 ns, 500 ns
Tj max. 175 °C
Features
• Superectifier structure for high reliability
condition
• Patented glass-plastic encapsulation technique
• Ideal for automated placement
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and Telecommunication
Mechanical Data
Case: DO-214BA, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
Device marking code RA RB RD RG RJ RK RM
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current
at TL = 120 °C
IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM 30 A
Max. full load reverse current, full cycle average
TA = 55 °C
IR(AV) 50 µA
Operating junction and storage temperature range TJ,TSTG - 65 to + 175 °C
www.vishay.com
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Document Number 88697
10-Aug-05
RGF1A thru RGF1M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Note:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Parameter Test condition Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
Maximum
instantaneous forward
voltage
at 1.0 A VF 1.3 V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 125 °C
IR 5.0
100
µA
Typical reve r s e
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr 150 250 500 ns
Typical junction
capacitance
at 4.0 V, 1 MHz CJ 8.5 pF
Parameter Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
Typical thermal resistance(1) RθJA
RθJL
80
28
°C/W
Figure 1. Forward Current Derating Curve
0.5
100 110 120 130 140 150 160 175
0
1
P. C . B . M o unted on
0.2 x 0.2” (5.0 x 5.0mm)
Copper Pad Areas
60 Hz
Resistive or
Inductive Load
Lead Temperature (°C)
Average Forward Rectified Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
110 100
0
5
10
15
20
25
30
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
RGF1A thru RGF1M
Document Number 88697
10-Aug-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0.4 0.6 0.81.0 1.2 1.4 1.6
0.01
0.1
1
10
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
020 40 60 80100
0.01
0.1
1
10
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
110 100
1
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1 110 100
0.1
1
10
100
Mounted on
0.2 x 02.” (5.0 x 7mm)
Copper Pad Areas
t, Pulse Duration (sec.)
Transient Thermal Impedance (°C/W)
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118(3.00)
0.040 (1.02)
0.066 (1.68)
0.098(2.49)
0.108(2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 MAX.
(1.93 MAX.)
0.220
(5.58)REF
0.060 MIN.
(1.52 MIN.)
MountingPad Layout
Cathode Band
0.066 MIN.
(1.68 MIN.)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
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