Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com 1
Specifications subject to change without notice. 10/99A
GaAs IC High Isolation Positive Control
SPDT Switch DC–3.0 GHz
AS176-59
Preliminary
Features
■Positive Voltage Control (0/+3 to +5 V)
■High Isolation (50 dB @ 0.9, 1.9 GHz)5
■Low DC Power Consumption
■Ideal for Cellular, GSM, DCS,PCS, 3G and
2.4 GHz ISM Applications
MSOP-8
Description
The AS176-59 is a GaAs FET IC SPDT switch packaged
in a MSOP-8 plastic package for low cost, high isolation
commercial applications. Ideal building block for base
station dual band applications where synthesizer isolation
is critical. Use in conjunction with the AS165-59 SPST
switch to meet GSM synthesizer isolation requirements.
Parameter1Condition Frequency2Min. Typ. Max. Unit
Insertion Loss3DC–1.0 GHz 0.7 0.9 dB
DC–2.0 GHz 0.8 1.0 dB
DC–2.5 GHz 0.8 1.1 dB
DC–3.0 GHz 0.9 1.2 dB
Isolation4J1–J2/J1–J3DC–1.0 GHz 45/50 50/55 dB
J1–J2/J1–J3DC–2.0 GHz 41/38 45/42 dB
DC–2.5 GHz 29 34 dB
DC–3.0 GHz 22 27 dB
Isolation5J1–J2/J1–J3DC–1.0 GHz 45/50 50/55 dB
DC–2.0 GHz 47 52 dB
DC–2.5 GHz 36 40 dB
DC–3.0 GHz 30 35 dB
VSWR6DC–2.0 GHz 1.3:1 1.5:1
DC–3.0 GHz 1.5:1 1.8:1
Electrical Specifications at 25°C (0, +3 V), (0, +5 V)
0.012 (0.30 mm)
PIN 1
PIN 1
INDICATOR
+ 0.006 (0.15 mm)
7.0˚
TYP.
0.038 (0.95 mm)
0.030 (0.75 mm) 0.017
(0.43 mm) 8.0˚
MAX.
0.028 (0.70 mm)
0.016 (0.40 mm)
0.007 (0.18 mm)
± 0.005 (0.12 mm)
0.006 (0.15 mm)
0.002 (0.05 mm)
- 0.002 (0.05 mm)
0.0256 (0.65 mm) TYP.
0.118 (3.00 mm)
± 0.004 (0.1 mm)
SQ.
0.193 (4.90 mm)
REF.
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics7Rise, Fall (10/90% or 90/10% RF) 60 ns
On, Off (50% CTL to 90/10% RF) 100 ns
Video Feedthru 50 mV
Intermodulation Intercept Point (IP3) Two-tone Input Power +5 dBm
+3 V 0.5–3.0 GHz +41 dBm
+5 V 0.5–3.0 GHz +45 dBm
Control Voltages VLow = 0 to 0.2 V @ 20 µA Max.
VHigh = +3 V @ 100 µA Max. to +5 V @ 200 µA Max.
VS = VHigh ± 0.2 V
Operating Characteristics at 25°C (0, +5 V)
1. All measurements made in a 50 Ωsystem, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/°C.
4. Pin 4: N/C.
5. Pin 4: GND.
6. Insertion loss state.
7. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
GaAs IC High Isolation Positive Control SPDT Switch DC–3.0 GHz AS176-59
2Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com
Specifications subject to change without notice. 10/99A
J2
J1
V1
V2
N/C
GND
GND
CBL
CBL
J3
CBL
12 34
87 65
CBL = 47 pF.
V1V2J1–J2J1–J3
0V
High Isolation Insertion Loss
VHigh 0 Insertion Loss Isolation
Truth Table
Pin Out
VHigh = +3 V to +5 V.
Insertion Loss vs. Frequency
Frequency (GHz)
Insertion Loss (dB)
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0 0.5 1.0 1.5 2.0 2.5 3.0
J1–J2
J1–J3
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
Isolation vs. Frequency
Pin 4: N/C
Frequency (GHz)
Isolation (dB)
0 0.5 1.0 1.5 2.0 2.5 3.0
J1–J3
J1–J2
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
Isolation vs. Frequency
Pin 4: GND
Frequency (GHz)
Isolation (dB)
0 0.5 1.0 1.5 2.0 2.5 3.0
J1–J2
J1–J3
Typical Performance Data (0, +5 V)
Characteristic Value
RF Input Power 1 W Max. > 500 MHz
0/+8 V Control
Supply Voltage +8 V
Control Voltage -0.2 V, +8 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
ΘJC 25°C/W
Absolute Maximum Ratings
VSWR vs. Frequency
Frequency (GHz)
VSWR (dB)
0 0.5 1.0 1.5 2.0 2.5 3.0
1.0
1.2
1.4
1.6
1.8
2.0
J1–J2
J1–J3
