February 2012 Doc ID 13228 Rev 6 1/34
1
VN5770AK-E
Quad smart power solid state relay
for complete H-bridge configurations
Features
General features
Inrush current management by active
power limitation on the high-side switches
Very low standby current
Very low electromagnetic susceptibility
In compliance with the 2002/95/EC
European directive
Protection
High-side drivers undervoltage shutdown
Overvoltage clamp
Output current limitation
High and low-side overtemperature
shutdown
Short circuit protection
ESD protection
Diagnostic functions
Proportional load current sense
Thermal shutdown indication on both the
high and low-side switches
Applications
DC motor driving in full or half bridge
configuration
All types of resistive, inductive and capacitive
loads
Description
The VN5770AK-E is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high-side and two low-side
switches. The double high-side is made using
STMicroelectronics® VIPower® M0-5 Technology,
while the low-side switches are fully protected
VIPower M0-3 OMNIFET II. This device is suitable
to drive a DC motor in a bridge configuration as
well as to be used as a quad switch for any low
voltage application.
The dual high-side switches integrate built-in non-
latching thermal shutdown with thermal
hysteresis. An output current limiter protects the
device in overload condition. In case of long
overload duration, the device limits the dissipated
power to a safe level up to thermal shut-down
intervention. An analog current sense pin delivers
a current proportional to the load current
(according to a known ratio) and indicates
overtemperature shutdown of the relevant high-
side switch through a voltage flag.
The low-side switches have built-in non-latching
thermal shutdown with thermal hysteresis, linear
current limitation and overvoltage clamping.
Fault feedback for overtemperature shutdown of
the low-side switch is indicated by the relevant
input pin current consumption going up to the fault
sink current flag.
Type RDS(on) IOUT VCC
VN5770AK-E 280mΩ(1)
1. Total resistance of one side in bridge configuration
8.5A(2)
2. Typical current limitation value
36V
SO-28
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Obsolete Product(s) - Obsolete Product(s)
Contents VN5770AK-E
2/34 Doc ID 13228 Rev 6
Contents
1 Block diagram and pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1 Electrical characteristics for dual high-side switch . . . . . . . . . . . . . . . . . . . 9
3.2 Electrical characteristics curves for dual high-side switch . . . . . . . . . . . . 13
3.3 Electrical characteristics for low-side switches . . . . . . . . . . . . . . . . . . . . . 15
3.4 Electrical characteristics for low-side switches . . . . . . . . . . . . . . . . . . . . . 17
4 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1 Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . . 23
5 Package and thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.1 SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.1 ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.2 SO-28 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.3 SO-28 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Obsolete Product(s) - Obsolete Product(s)
VN5770AK-E List of tables
Doc ID 13228 Rev 6 3/34
List of tables
Table 1. Pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 2. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Dual high-side switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Low-side switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 5. Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 6. Switching (VCC = 13V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 7. Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 8. Protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 9. Current sense (8V<VCC<16V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 10. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 11. Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 12. On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 13. Dynamic (Tj= 25°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 14. Switching (Tj= 25°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 15. Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 16. Protection and diagnostics (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . 16
Table 17. Thermal calculations in clockwise and anti-clockwise operation in steady-state mode . . . 25
Table 18. Thermal resistances definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 19. Single pulse thermal impedance definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 20. Thermal calculations in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 21. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 22. SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 23. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 24. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Obsolete Product(s) - Obsolete Product(s)
List of figures VN5770AK-E
4/34 Doc ID 13228 Rev 6
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 3. Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 4. Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5. Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6. Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 7. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 8. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 9. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 10. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 11. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 12. On-state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 13. On-state resistance vs VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 14. Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 15. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 16. ILIMH vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 17. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 18. Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 19. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 20. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 21. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 22. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 23. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 24. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 25. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 26. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 27. Static drain-source on resistance vs ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 28. Static drain-source on resistance vs input voltage (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 29. Static drain-source on resistance vs input voltage (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 30. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 31. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 32. Current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 33. Typical application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 34. Recommended motor operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 35. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 36. Maximum turn off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 37. SO-28 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 38. Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 39. Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . 24
Figure 40. SO-28 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . 26
Figure 41. SO-28 LSD thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . 26
Figure 42. Thermal fitting model of an H-Bridge in SO-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 43. SO-28 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 44. SO-28 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 45. Tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Obsolete Product(s) - Obsolete Product(s)
VN5770AK-E Block diagram and pin descriptions
Doc ID 13228 Rev 6 5/34
1 Block diagram and pin descriptions
Figure 1. Block diagram
Table 1. Pin descriptions
No Name Function
1, 3, 25, 28 DRAIN 3 Drain of Switch 3 (low-side switch)
2 INPUT 3 Input of Switch 3 (low-side switch)
4, 11 N.C. Not Connected
/VERTEMP
6CC
'.$
).054 3/52#%
,OGIC
$RIVER
6CC
CLAMP
5NDERVOLTAGE
#LAMP
6DSLIMITER
#URRENTLIMITER
0OWERLIMITATION
3/52#%
$RIVER
#LAMP
6$3LIMITER
0OWERLIMITATION
).054
#URRENTLIMITER
/VERVOLTAGE
'ATE
,INEAR
$2!).
3/52#%
#LAMP
#URRENT
,IMITER
#ONTROL
/VER
4EMPERATURE
).054
/VERVOLTAGE
'ATE
,INEAR
$2!).
3/52#%
#LAMP
#URRENT
,IMITER
#ONTROL
/VER
4EMPERATURE
).054
/VERTEMP
)$3
+
)$3
+
#3%.3%
("1($'5
Obsolete Product(s) - Obsolete Product(s)
Block diagram and pin descriptions VN5770AK-E
6/34 Doc ID 13228 Rev 6
Figure 2. Configuration diagram (top view)
5, 10, 19, 24 VCC
Drain of Switches 1 and 2 (high-side switches) and Power Supply
Voltage
6 GND Ground of Switches 1 and 2 (high-side switches)
7 INPUT 1 Input of Switch 1 (high-side switches)
8 INPUT 2 Input of Switch 2 (high-side switch)
9CURRENT
SENSE
Analog current sense pin, it delivers a current proportional to the
load current
12, 14, 15, 18 DRAIN 4 Drain of switch 4 (low-side switch)
13 INPUT 4 Input of Switch 4 (low-side switch)
16, 17 SOURCE 4 Source of Switch 4 (low-side switch)
20, 21 SOURCE 2 Source of Switch 2 (high-side switch)
22, 23 SOURCE 1 Source of Switch 1 (high-side switch)
26, 27 SOURCE 3 Source of Switch 3 (low-side switch)
Table 2. Thermal data
Symbol Parameter Max value Unit
Rthj-case Thermal resistance junction-lead (high-side switch) 10 °C/W
Rthj-case Thermal resistance junction-lead (low-side switch) 7 °C/W
Rthj-amb Thermal resistance junction-ambient See Figure 39 °C/W
Table 1. Pin descriptions (continued)
No Name Function
Obsolete Product(s) - Obsolete Product(s)
VN5770AK-E Absolute maximum ratings
Doc ID 13228 Rev 6 7/34
2 Absolute maximum ratings
Stressing the device above the rating listed in Ta bl e 3 and Ta b l e 4 may cause permanent
damage to the device. These are stress ratings only and operation of the device at these or
any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to the conditions in Section 2.1: Absolute maximum ratings for
extended periods may affect device reliability.
2.1 Absolute maximum ratings
Table 3. Dual high-side switch
Symbol Parameter Value Unit
VCC DC supply voltage 41 V
-VCC Reverse DC supply voltage 0.3 V
-IGND DC reverse ground pin current 200 mA
IOUT DC output current Internally limited A
-IOUT Reverse DC output current -12 A
IIN DC input current -1 to 10 mA
ICSD DC current sense disable input current -1 to 10 mA
VCSENSE Current sense maximum voltage VCC-41
+VCC
V
V
EMAX
Maximum switching energy (single pulse)
(L = 3.7mH; RL=0Ω; Vbat = 13.5V; Tjstart = 150ºC;
IOUT =I
limL(Typ.))
32 mJ
VESD
Electrostatic Discharge (Human Body Model: R = 1.5KΩ;
C = 100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- VCC
4000
2000
5000
5000
V
V
V
V
VESD Charge device model (CDM-AEC-Q100-011) 750 V
TjJunction operating temperature -40 to 150 °C
Tstg Storage temperature -55 to 150 °C
Obsolete Product(s) - Obsolete Product(s)
Absolute maximum ratings VN5770AK-E
8/34 Doc ID 13228 Rev 6
Table 4. Low-side switch
Symbol Parameter Value Unit
VDSn Drain-source voltage (VINn = 0V) Internally clamped V
VINn Input voltage Internally clamped V
IINn Input current +/-20 mA
RIN MINn Minimum input series impedance 220 Ω
IDn Drain current Internally limited A
IRn Reverse DC output current -12 A
VESD1 Electrostatic discharge (R = 1.5KΩ, C = 100pF) 4000 V
VESD2
Electrostatic discharge on output pins only
(R = 330Ω, C = 150pF) 16500 V
Ptot Total dissipation at Tc= 25°C 4 W
TjOperating junction temperature Internally limited °C
TcCase operating temperature Internally limited °C
Tstg Storage temperature -55 to 150 °C
Obsolete Product(s) - Obsolete Product(s)
VN5770AK-E Electrical characteristics
Doc ID 13228 Rev 6 9/34
3 Electrical characteristics
3.1 Electrical characteristics for dual high-side switch
Values specified in this section are for 8V < VCC < 36V; -40°C < Tj < 150°C, unless
otherwise specified (for each channel).
Table 5. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
VCC
Operating supply
voltage 4.5 13 36 V
VUSD Undervoltage shutdown 3.5 4.5 V
VUSDhyst
Undervoltage shutdown
hysteresis 0.5 V
RON On state resistance
IOUT =3A; T
j=25°C 160 mΩ
IOUT =3A; T
j= 150°C 320 mΩ
IOUT =3A; V
CC =5V; T
j= 25°C 210 mΩ
Vclamp Clamp voltage IS= 20 mA 41 46 52 V
ISSupply current
Off State; VCC = 13V; Tj=25°C;
VIN =V
OUT =V
SENSE =0V 2(1)
1. PowerMOS leakage included
5(1) μA
On State; VCC = 13V; VIN =5V;
IOUT =0A 36mA
IL(off)
Off state output
current(2)
2. For each channel
VIN =V
OUT =0V; V
CC =13V;
Tj= 25°C 03μA
VIN =V
OUT =0V; V
CC =13V;
Tj= 125°C 05μA
VF
Output - VCC diode
voltage(2) -IOUT =3A; T
j= 150°C 0.7 V
Table 6. Switching (VCC =13V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time RL=4.3Ω (see Figure 3)— 15 μs
td(off) Turn-off delay time RL=4.3Ω (see Figure 3)— 10 μs
(dVOUT/dt)on Turn-on voltage slope RL=4.3Ω See Figure 15 —Vs
(dVOUT/dt)off Turn-off voltage slope RL=4.3Ω See Figure 17 —Vs
WON
Switching energy
losses during twon RL=4.3Ω (see Figure 3) 0.16 mJ
WOFF
Switching energy
losses during twoff RL=4.3Ω (see Figure 3) 0.08 mJ
Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics VN5770AK-E
10/34 Doc ID 13228 Rev 6
Table 7. Logic input
Symbol Parameter Test conditions Min. Typ. Max. Unit
VIL Input low level voltage 0.9 V
IIL Low level input current VIN =0.9V 1 μA
VIH Input high level voltage 2.1 V
IIH High level input current VIN =2.1V 10 μA
VI(hyst) Input hysteresis voltage 0.25 V
VICL Input clamp voltage IIN =1mA 5.5 7 V
IIN = -1mA -0.7 V
Table 8. Protection and diagnostics(1)
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles
Symbol Parameter Test conditions Min. Typ. Max. Unit
IlimH
DC Short circuit
current
VCC =13V 6 8.5 12 A
5V<VCC<36V 12 A
IlimL
Short circuit current
during thermal cycling VCC =13V; T
R<Tj<TTSD 3.5 A
TTSD Shutdown temperature 150 175 200 °C
TRReset temperature TRS + 1 TRS + 5 °C
TRS
Thermal reset of
STATUS 135 °C
THYST
Thermal hysteresis
(TTSD-TR)C
VDEMAG
Turn-off output voltage
clamp IOUT =1A; V
IN = 0; L = 20mH VCC-41 VCC-46 VCC-52 V
VON
Output voltage drop
limitation
IOUT = 0.03A;
Tj= -40°C to 150°C
(see Figure 4)
25 mV
Obsolete Product(s) - Obsolete Product(s)
VN5770AK-E Electrical characteristics
Doc ID 13228 Rev 6 11/34
Figure 3. Switching time waveforms
Table 9. Current sense (8V<VCC<16V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
K0IOUT/ISENSE
IOUT =0.08A; V
SENSE =0.5V;
Tj= -40°C to 150°C 1266 1900 3100
K1IOUT/ISENSE
IOUT =0.35A; V
SENSE =0.5V;
Tj= -40°C to 150°C
Tj= 25°C to 150°C
840
980
1360
1360
2000
1740
K2IOUT/ISENSE
IOUT =3A; V
SENSE =4V;
Tj= -40°C to 150°C 1200 1270 1350
K3IOUT/ISENSE
IOUT =4A; V
SENSE =4V;
Tj= -40°C to 150°C 1200 1270 1350
ISENSE0 Analog sense current
IOUT =0A; V
SENSE =0V;
VIN =0V; T
j= -40°C to 150°C 01μA
IOUT =0A; V
SENSE =0V;
VIN =5V; T
j= -40°C to 150°C 02μA
VSENSE
Max analog sense output
voltage IOUT =5A; R
SENSE =3.9KΩ 5V
VSENSEH
Analog sense output
voltage in overtemperature
condition
VCC =13V; R
SENSE =3.9KΩ9V
ISENSEH
Analog sense output
current in overtemperature
condition
VCC =13V 8 mA
tDSENSE2H
Delay response time from
rising edge of INPUT pin
VSENSE<4V; 0.35A<Iout<5A;
ISENSE = 90% of ISENSE max
(see Figure 5)
70 300 μs
tDSENSE2L
Delay response time from
falling edge of INPUT pin
VSENSE<4V; 0.35A<Iout<5A;
ISENSE = 10% of ISENSE max
(see Figure 5)
100 250 μs
T
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Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics VN5770AK-E
12/34 Doc ID 13228 Rev 6
Figure 4. Output voltage drop limitation
Figure 5. Current sense delay characteristics
Table 10. Truth table
Conditions Input Output Sense
Normal operation L
H
L
H
0
Nominal
Overtemperature L
H
L
L
0
VSENSEH
Undervoltage L
H
L
L
0
0
Short circuit to GND L
H
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0
0
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clamp LL 0
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VN5770AK-E Electrical characteristics
Doc ID 13228 Rev 6 13/34
3.2 Electrical characteristics curves for dual high-side switch
Figure 6. Off-state output current Figure 7. High level input current
Figure 8. Input clamp voltage Figure 9. Input low level
Figure 10. Input high level Figure 11. Input hysteresis voltage
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Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics VN5770AK-E
14/34 Doc ID 13228 Rev 6
Figure 12. On-state resistance vs Tcase Figure 13. On-state resistance vs VCC
Figure 14. Undervoltage shutdown Figure 15. Turn-on voltage slope
Figure 16. ILIMH vs Tcase Figure 17. Turn-off voltage slope
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Obsolete Product(s) - Obsolete Product(s)
VN5770AK-E Electrical characteristics
Doc ID 13228 Rev 6 15/34
3.3 Electrical characteristics for low-side switches
Values specified in this section are for -40°C < Tj < 150°C, unless otherwise specified
Table 11. Off
Symbol Parameter Test conditions Min Typ Max Unit
VCLAMP Drain-source clamp voltage VIN=0V; ID= 1.5A 40 45 55 V
VCLTH
Drain-source clamp
threshold voltage VIN =0V; I
D=2mA 36 V
VINTH Input threshold voltage VDS =V
IN; ID=1mA 0.5 2.5 V
IISS
Supply current from input
pin VDS=0V; VIN = 5V 100 150 μA
VINCL Input-source clamp voltage IIN =1mA 6 6.8 8 V
IIN = -1mA -1.0 -0.3 V
IDSS
Zero input voltage drain
current (VIN =0V)
VDS = 13V; VIN =0V; T
j=25°C 30 μA
VDS = 25V; VIN =0V 75 μA
Table 12. On
Symbol Parameter Test conditions Min Typ Max Unit
RDS(on)
Static drain-source on
resistance
VIN =5V; I
D=3A; T
j= 25°C 120 mΩ
VIN =5V; I
D= 3A 240 mΩ
Table 13. Dynamic (Tj=25°C, unless otherwise specified)
Symbol Parameter Test conditions Min Typ Max Unit
gfs
Forward
transconductance VDD = 13V; ID=1.5A 2.5 S
COSS Output capacitance VDS = 13V; f = 1MHz; VIN =0V 150 pF
Table 14. Switching (Tj=25°C, unless otherwise specified)
Symbol Parameter Test conditions Min Typ Max Unit
td(on) Turn-on delay time
VDD =15V; I
D=3A; V
gen =5V;
Rgen =R
IN MINn =220Ω
200 400 ns
trRise time 1.2 2.5 μs
td(off) Turn-off delay time 600 1350 ns
tfFall time 400 1000 ns
td(on) Turn-on delay time
VDD =15V; I
D=3A; V
gen =5V;
Rgen =2.2KΩ
—0.802.5 μs
trRise time 3.7 7.5 μs
td(off) Turn-off delay time 2.6 7.5 μs
tfFall time 2.3 7.0 μs
Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics VN5770AK-E
16/34 Doc ID 13228 Rev 6
(dI/dt)on Turn-on current slope VDD =15V; I
D=3A; V
gen =5V;
Rgen =R
IN MINn =220Ω—3.0 A/μs
QiTotal input charge VDD =12V; I
D=3A; V
IN =5V;
Igen = 2.13mA —9.0 nC
Table 15. Source drain diode
Symbol Parameter Test conditions Min Typ Max Unit
VSD(1)
1. Pulsed: pulse duration = 300μs, duty cycle 1.5%
Forward on voltage ISD=1.5A; VIN=0V 0.8 V
trr Reverse recovery time
ISD=1.5A; dI/dt=12A/ms;
VDD=30V; L=200μH
—400— ns
Qrr Reverse recovery charge 200 nC
IRRM Reverse recovery current 1.0 A
Table 16. Protection and diagnostics (-40°C < Tj < 150°C, unless otherwise
specified)
Symbol Parameter Test conditions Min Typ Max Unit
Ilim Drain current limit VIN=5V; VDS=13V 6 8.5 12 A
tdlim Step response current limit VIN =5V; V
DS=13V 10 μs
Tjsh Overtemperature
shutdown 150 175 200 °C
Tjrs Overtemperature reset 135 °C
Igf Fault sink current VIN =5V; V
DS = 13V; Tj=T
jsh 10 15 20 mA
Eas Single pulse avalanche
energy
Starting Tj= 25°C; VDD =24V;
VIN =5V; R
gen =R
IN MINn =220Ω;
L=24mH
100 mJ
Table 14. Switching (Tj=25°C, unless otherwise specified) (continued)
Symbol Parameter Test conditions Min Typ Max Unit
Obsolete Product(s) - Obsolete Product(s)
VN5770AK-E Electrical characteristics
Doc ID 13228 Rev 6 17/34
3.4 Electrical characteristics for low-side switches
Figure 18. Static drain source on
resistance
Figure 19. Derating curve
Figure 20. Transconductance Figure 21. Transfer characteristics
Figure 22. Input voltage vs input charge Figure 23. Capacitance variations
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Electrical characteristics VN5770AK-E
18/34 Doc ID 13228 Rev 6
Figure 24. Output characteristics Figure 25. Step response current limit
Figure 26. Source-drain diode forward
characteristics
Figure 27. Static drain-source on
resistance vs ID
Figure 28. Static drain-source on
resistance vs input voltage
(part 1)
Figure 29. Static drain-source on
resistance vs input voltage
(part 2)
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Obsolete Product(s) - Obsolete Product(s)
VN5770AK-E Electrical characteristics
Doc ID 13228 Rev 6 19/34
Figure 30. Normalized input threshold
voltage vs temperature
Figure 31. Normalized on resistance vs
temperature
Figure 32. Current limit vs junction
temperature
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        
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Application information VN5770AK-E
20/34 Doc ID 13228 Rev 6
4 Application information
Figure 33. Typical application schematic
Note: Mostly motor bridge drivers use a reverse battery protection diode (D) inside supply rail.
This diode prevents a reverse current flow back to Vbatt in case the bridge gets disabled via
the logic inputs while motor inductance still carries energy. In order to prevent a hazardous
overvoltage at circuit supply terminal (Vcc), a blocking capacitor (C) is needed to limit the
voltage overshoot. As basic orientation, 50µF per 1A load current in recommended. In
alternative, also a Zener protection (Z) is suitable. Even if a reverse polarity diode is not
present, it is recommended to use a capacitor or zener at Vcc because a similar problem
appears in case supply terminal of the module has intermittent electrical contact to the
battery or gets disconnected while motor is operating.
-
)NPUT
)NPUT
-ICRO
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3OURCE
3OURCE
3OURCE
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$RAIN
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6BATT
6Z 66
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VN5770AK-E Application information
Doc ID 13228 Rev 6 21/34
Figure 34. Recommended motor operation
)NPUT
)NPUT
)NPUT
)NPUT
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T
T
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Application information VN5770AK-E
22/34 Doc ID 13228 Rev 6
Figure 35. Waveforms
SENSE CURRENT
INPUT
NORMAL OPERATION
UNDERVOLTAGE
VCC VUSD
VUSDhyst
INPUT
SENSE CURRENT
LOAD CURRENT
LOAD CURRENT
OVERLOAD OPERATION
INPUT
SENSE CURRENT
TTSD
TR
Tj
LOAD CURRENT
INPUT
LOAD VOLTAGE
SENSE CURRENT
LOAD CURRENT
<Nominal <Nominal
SHORT TO VCC
CS_DIS
CS_DIS
CS_DIS
CS_DIS
TRS
ILIMH
ILIML
VSENSEH
thermal cycling
power
limitation
current
limitation
SHORTED LOAD NORMAL LOAD
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VN5770AK-E Application information
Doc ID 13228 Rev 6 23/34
4.1 Maximum demagnetization energy (VCC = 13.5V)
Figure 36. Maximum turn off current versus load inductance
Note: Values are generated with RL=0
Ω
In case of repetitive pulses, Tjstart (at the beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves B and C.
VIN, IL
t
Demagnetization Demagnetization Demagnetization
0.1
1
10
100
0.01 0.1 110 100
L (mH)
I
LMAX
(A)
A
B
C
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
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Package and thermal data VN5770AK-E
24/34 Doc ID 13228 Rev 6
5 Package and thermal data
5.1 SO-28 thermal data
Figure 37. SO-28 PC board
Figure 38. Chipset configuration
Figure 39. Auto and mutual Rthj-amb vs PCB copper area in open box free air
condition(a)
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
Cu thickness=35mm, Copper areas: from minimum pad layout to 16cm2).
HIGH SIDE
CHIP
channels 1,2
LOW SIDE
CHIP
LOW SIDE
CHIP
channel 3 channel 4
RthB
RthA
RthC
RthAB RthAC
RthBC
0
10
20
30
40
50
60
01234567
Cu Area (refer to PCB layout)
Rth (˚C/W)
RthA
RthB = RthC
RthAB = RthAC
RthBC
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VN5770AK-E Package and thermal data
Doc ID 13228 Rev 6 25/34
a. See Figure 38. For more detailed information see Table 17 and Table 18.
Table 17. Thermal calculations in clockwise and anti-clockwise operation in
steady-state mode
HS1HS2LS3LS4TjHS12 TjLS3 TjLS4
ON OFF OFF ON PdHS1 x RthHS + PdLS4 x
RthHSLS + Tamb
PdHS1 x RthHSLS +
PdLS4 x RthLSLS + Tamb
PdHS1 x RthHSLS +
PdLS4 x RthLS + Tamb
OFF ON ON OFF PdHS2 x RthHS + PdLS3 x
RthHSLS + Tamb
PdHS2 x RthHSLS +
PdLS3 x RthLS + Tamb
PdHS2 x RthHSLS +
PdLS3 x RthLSLS + Tamb
Table 18. Thermal resistances definitions(1)
1. values dependent on PCB heatsink area
RthHS =RthHS1 =RthHS2
High-side chip thermal resistance junction to ambient
(HS1 or HS2 in ON state)
RthLS =RthLS3 =RthLS4 Low-side chip thermal resistance junction to ambient
RthHSLS =RthHS1LS4 =RthHS2LS3
Mutual thermal resistance junction to ambient between
high-side and low-side chips
RthLSLS =RthLS3LS4
Mutual thermal resistance junction to ambient between
low-side chips
Table 19. Single pulse thermal impedance definitions(1)
1. values dependent on PCB heatsink area
ZthHS High-side chip thermal impedance junction to ambient
ZthLS =ZthLS3 =ZthLS4 Low-side chip thermal impedance junction to ambient
ZthHSLS =ZthHS12LS3 =ZthHS12LS4
Mutual thermal impedance junction to ambient
between high-side and low-side chips
ZthLSLS =ZthLS3LS4
Mutual thermal impedance junction to ambient
between low-side chips
Table 20. Thermal calculations in transient mode(1)
1. Calculation is valid in any dynamic operating condition. Pd values set by user.
TjHS12 ZthHS x PdHS12 + ZthHSLS x (PdLS3 + PdLS4) + Tamb
TjLS3 ZthHSLS x PdHS12 + ZthLS x PdLS3 + ZthLSLS x PdLS4 + Tamb
TjLS4 ZthHSLS x PdHS12 + ZthLSLS x PdLS3 + ZthLS x PdLS4 + Tamb
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Package and thermal data VN5770AK-E
26/34 Doc ID 13228 Rev 6
Figure 40. SO-28 HSD thermal impedance junction ambient single pulse
Figure 41. SO-28 LSD thermal impedance junction ambient single pulse
ZTH
0.1
1
10
100
0.001 0.01 0.1 110 100 1000
time (sec)
(˚C/W)
Footprint
2 cm
2
1 cm
2
6 cm
2
HSD
HsLsD
Footprint
2 cm
2
1 cm
2
6 cm
2
ZTH
0.1
10
100
0.001 0.01 0.1 110 100 1000
time (sec)
(˚C/W)
Footprint
2 cm
2
1 cm
2
6 cm
2
Footprint
2 cm
2
1 cm
2
6 cm
2
LSD
LsLsD
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VN5770AK-E Package and thermal data
Doc ID 13228 Rev 6 27/34
Equation 1: pulse calculation formula
Figure 42. Thermal fitting model of an H-Bridge in SO-28
Table 21. Thermal parameters(1)
Area/island (cm2) Footprint 1 2 6
R1 (°C/W) 1
R2 (°C/W) 1.8
R3 (°C/W) 3.5
R4 (°C/W) 13.5
R5 (°C/W) 10.5
R6 (°C/W) 62.28 52.28 44.28 32.28
R7 (°C/W) 1
R8 (°C/W) 1.8
R9 (°C/W) 0.24
R10 (°C/W) 1.2
R11 (°C/W) 3.5
R12 (°C/W) 15.2
R13 (°C/W) 10.5
R14 (°C/W) 62.28 52.28 44.28 32.28
ZTHδRTH δZTHtp 1δ()+=
where δtpT=
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Package and thermal data VN5770AK-E
28/34 Doc ID 13228 Rev 6
Area/island (cm2) Footprint 1 2 6
R15 (°C/W) 0.24
R16 (°C/W) 1.2
R17 (°C/W) 3.5
R18 (°C/W) 15.5
R19 (°C/W) 10.5
R20 (°C/W) 62.28 52.28 44.28 32.28
R21 (°C/W) 150
R22 (°C/W) 150
R23 (°C/W) 150
R24 (°C/W) 150 52.28 44.28 32.28
C1 (W·s/°C) 0.0008
C2 (W·s/°C) 0.001
C3 (W·s/°C) 0.008
C5 (W·s/°C) 0.2
C6 (W·s/°C) 1.6 1.61 1.7 3.25
C7 (W·s/°C) 0.0008
C8 (W·s/°C) 0.001
C9 (W·s/°C) 0.00015
C10 (W·s/°C) 0.0005
C11 (W·s/°C) 0.008
C13 (W·s/°C) 0.2
C14 (W·s/°C) 1.6 1.61 1.7 3.25
C15 (W·s/°C) 0.00015
C16 (W·s/°C) 0.0005
C17 (W·s/°C) 0.008
C19 (W·s/°C) 0.2
C20 (W·s/°C) 1.6 1.61 1.7 3.25
1. A blank space means that the value is the same as the previous one
Table 21. Thermal parameters(1) (continued)
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VN5770AK-E Package and packing information
Doc ID 13228 Rev 6 29/34
6 Package and packing information
6.1 ECOPACK®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
6.2 SO-28 package information
Table 22. SO-28 mechanical data
Symbol
millimeters
Min Typ Max
A2.65
a1 0.10 0.30
b 0.35 0.49
b1 0.23 0.32
C0.50
c1 45° (typ.)
D 17.7 18.1
E 10.00 10.65
e1.27
e3 16.51
F 7.40 7.60
L 0.40 1.27
S 8° (max.)
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Package and packing information VN5770AK-E
30/34 Doc ID 13228 Rev 6
Figure 43. SO-28 package dimensions
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VN5770AK-E Package and packing information
Doc ID 13228 Rev 6 31/34
6.3 SO-28 packing information
Figure 44. SO-28 tube shipment (no suffix)
Figure 45. Tape and reel shipment (suffix “TR”)
All dimensions are in mm.
Base Q.ty 28
Bulk Q.ty 700
Tube length (± 0.5) 532
A3.5
B 13.8
C (± 0.1) 0.6
A
C
B
Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4
Tape dimensions
According to Electronic Industries
Association
(EIA) Standard 481 rev. A, Feb. 1986
All dimensions are in mm.
Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 12
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2
Top
cover
tape
End
Start
No componentsNo components Components
500mm min 500mm min
Empty components pockets
sealed with cover tape.
User direction of feed
Reel dimensions
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Order codes VN5770AK-E
32/34 Doc ID 13228 Rev 6
7 Order codes
Table 23. Device summary
Package
Order codes
Tube Tape and reel
SO-28 VN5770AK-E VN5770AKTR-E
Obsolete Product(s) - Obsolete Product(s)
VN5770AK-E Revision history
Doc ID 13228 Rev 6 33/34
8 Revision history
Table 24. Document revision history
Date Revision Changes
June-2006 1 Initial release.
15-Feb-2007 2
Reformatted.
Table 5: Power section updated.
Table 6: Switching (VCC = 13V) updated.
Table 9: Current sense (8V<VCC<16V) updated.
Tabl e 12 : O n updated.
Table 14: Switching (Tj= 25°C, unless otherwise specified) updated.
Characteristic curves for high-side and low-side switches added.
Figure 38: Chipset configuration updated.
Figure 39: Auto and mutual Rthj-amb vs PCB copper area in open
box free air condition added.
Figure 40: SO-28 HSD thermal impedance junction ambient single
pulse, Figure 41: SO-28 LSD thermal impedance junction ambient
single pulse and Figure 42: Thermal fitting model of an H-Bridge in
SO-28 added.
Figure 21: Thermal parameters added.
High-side and low-side characteristic curves added.
Figure 35: Waveforms added.
Section 4.1: Maximum demagnetization energy (VCC = 13.5V)
added.
Figure 33: Typical application schematic added.
02-Jul-2007 3 Table 9: Current sense (8V<VCC<16V) updated
24-Jul-2007 4 Table 9: Current sense (8V<VCC<16V) - K0, K1 and K3 values
modified
04-Jan-2012 5 Table 9: Current sense (8V<VCC<16V) - K0 values modified
12-Feb-2012 6 Update Figure 2: Configuration diagram (top view) and Figure 33:
Typical application schematic
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VN5770AK-E
34/34 Doc ID 13228 Rev 6
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