MRF7S21170HR3 MRF7S21170HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used
in Class AB and Class C for PCN--PCS/cellular radio and WLL applications.
Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I
DQ =
1400 mA, Pout = 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output
Power
Pout @ 1 dB Compression Point ≃170 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1,2) TJ225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 170 W CW
Case Temperature 73C, 25 W CW
RJC
0.31
0.36
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF7S21170H
Rev. 7, 2/2012
Freescale Semiconductor
Technical Data
MRF7S21170HR3
MRF7S21170HSR3
2110--2170 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465C--03
NI--880S
MRF7S21170HSR3
CASE 465B--04
NI--880
MRF7S21170HR3
Freescale Semiconductor, Inc., 2006--2008, 2011--2012.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1A
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 500 nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 372 Adc)
VGS(th) 1.2 22.7 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
D= 1400 mAdc)
VGS(Q) —2.7 —Vdc
Fixture Gate Quiescent Voltage (1)
(VDD =28Vdc,I
D= 1400 mAdc, Measured in Functional Test)
VGG(Q) 4.5 5.4 6.5 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=3.72Adc)
VDS(on) 0.1 0.15 0.3 Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS =28Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —0.9 —pF
Output Capacitance
(VDS =28Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —703 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, Pout = 50 W Avg., f = 2167.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 15 16 18 dB
Drain Efficiency D29 31 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.1 —dB
Adjacent Channel Power Ratio ACPR —-- 3 7 -- 3 5 dBc
Input Return Loss IRL — -- 1 5 -- 9 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
(continued)
MRF7S21170HR3 MRF7S21170HSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, 2110--2170 MHz Bandwidth
Video Bandwidth @ 170 W PEP Pout whereIM3=--30dBc
(Tone Spacing from 100 kHz to VBW)
IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—25 —
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =50WAvg. GF—0.4 —dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@P
out = 170 W CW
—1.95 —
Average Group Delay @ Pout = 170 W CW, f = 2140 MHz Delay —1.7 —ns
Part--to--Part Insertion Phase Variation @ Pout = 170 W CW
f = 2140 MHz, Six Sigma Window
 —18 —
Gain Variation over Temperature
(--30Cto+85C)
G — 0.015 —dB/C
Output Power Variation over Temperature
(--30Cto+85C)
P1dB —0.01 —dB/C
1. VGG =2xV
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
4
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic
Z11 0.060x 0.760Microstrip
Z12* 0.129x 0.083Microstrip
Z13* 0.436x 0.083Microstrip
Z14* 0.490x 0.083Microstrip
Z15* 0.275x 0.083Microstrip
Z16 0.230x 0.083Microstrip
Z17, Z18 0.900x 0.080Microstrip
PCB Taconic TLX8--0300, 0.030,r=2.55
* Variable for tuning
Z1 0.250x 0.083Microstrip
Z2* 0.090x 0.083Microstrip
Z3* 0.842x 0.083Microstrip
Z4* 0.379x 0.083Microstrip
Z5* 0.307x 0.083Microstrip
Z6 0.156x 0.787Microstrip
Z7 1.160x 0.080Microstrip
Z8 0.119x 0.787Microstrip
Z9 0.077x 0.880Microstrip
Z10 0.459x 1.000Microstrip
VBIAS VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C1 C2
R1
Z1 Z2 Z3 Z4
C3
Z10
Z5
R2 Z7
R3
Z8 Z11 Z12 Z13 Z14 Z15
C5 C6
Z6 Z16
C18
C17
C16C15C14
C4
Z9
Z17
C8 C10 C12 C13
Z18
C7 C9 C11
+
Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 100 pF Chip Capacitor ATC100B101JT500XT ATC
C2, C3, C7, C8, C17, C18 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC
C4, C15 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC
C5 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C6 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC
C9, C10, C11, C12 10 F Chip Capacitors C5750X5R1H106MT TDK
C13 470 F, 63 V Electrolytic Capacitor, Radial 477KXM063M Illinois Capacitor
C14 0.4 pF Chip Capacitor ATC100B0R4BT500XT ATC
C16 0.1 pF Chip Capacitor ATC100B0R1BT500XT ATC
R1, R2 10 k, 1/4 W Chip Resistors CRCW12061002FKEA Vishay
R3 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
MRF7S21170HR3 MRF7S21170HSR3
5
RF Device Data
Freescale Semiconductor, Inc.
Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout
MRF7S21170H
Rev 0
CUT OUT AREA
C13
R2
R1 C1
C2
R3
C4
C3 C5 C6
C7
C9 C11
C14 C15 C16 C18
C17
C10 C12
C8
6
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
22202060
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
VDD =28Vdc,P
out =50W(Avg.),I
DQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability(CCDF)
216021202100
9
17
16
15
14
13
12
11
10
-- 3
36
34
32
30
28
0
-- 1
-- 2
D
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
-- 2 5
-- 5
-- 1 0
-- 1 5
-- 2 0
D, DRAIN
EFFICIENCY (%)
2140
2080 22002180
Gps, POWER GAIN (dB)
22202060
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
216021202100
9
17
16
15
14
13
12
11
10
-- 5
44
42
40
38
36
-- 2
-- 3
-- 4
D
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
-- 2 5
-- 5
-- 1 0
-- 1 5
-- 2 0
D, DRAIN
EFFICIENCY (%)
2140
2080 22002180
Figure 5. Two--Tone Power Gain versus
Output Power
100
13
18
1
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
16
15
14
10 400
Gps, POWER GAIN (dB)
17
Figure 6. Third Order Intermodulation Distortion
versus Output Power
-- 1 0
Pout, OUTPUT POWER (WATTS) PEP
10
-- 2 0
-- 3 0
-- 4 0
100
-- 6 0
-- 5 0
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
400
IDQ = 2100 mA
1750 mA
700 mA
1050 mA
1400 mA
IDQ = 700 mA
1750 mA
1050 mA
1400 mA
2100 mA
VDD =28Vdc,P
out =84W(Avg.),I
DQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability (CCDF)
MRF7S21170HR3 MRF7S21170HSR3
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
-- 6 0
-- 1 0
1 100
-- 4 0
-- 5 0
10
-- 3 0
-- 2 0
7th Order
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO--TONE SPACING (MHz)
Figure 9. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
40
Actual
Ideal
0
-- 2
-- 4
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON THE CCDF (dB)
10
VDD =28Vdc,P
out = 170 W (PEP), IDQ = 1400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
-- 1 0
-- 2 0
-- 4 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
20 60
400
VDD =28Vdc,I
DQ = 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
-- 5 0
-- 3 0
IM3--L
IM5--U
IM5--L IM7--LIM7--U
80 120
18
54
48
42
36
30
24
DDRAIN EFFICIENCY (%)
VDD =28Vdc,I
DQ = 1400 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
--1 dB = 43.335 W
0
--2 dB = 61.884 W
--3 dB = 83.111 W
100
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
50
-- 7 0
-- 2 0
40 4241
-- 3 0
-- 4 0
-- 5 0
-- 6 0
ACPR, UPPER AND LOWER RESULTS (dBc)
43 44 45 46 47
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected, with Memory Correction
400
13
19
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD =28Vdc
IDQ = 1400 mA
f = 2140 MHz
TC=--30_C25_C
85_C
101
18
17
16
15
14
50
40
30
20
10
DDRAIN EFFICIENCY (%)
Gps
D
Gps, POWER GAIN (dB)
100
-- 3 0 _C
25_C85_C
48 49
-- 6 0
VDD =28Vdc,I
DQ = 1400 mA, f = 2140 MHz Single--Carrier
W--CDMA, Input Signal PAR = 7.5 dB, ACPR @ 5MHz
Offset in 3.84 MHz Integrated Bandwidth
8
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
TYPICAL CHARACTERISTICS
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
Gps, POWER GAIN (dB)
200
13
17
0 100
14
15
16
28 V
IDQ = 1400 mA
f = 2140 MHz
280
VDD =24V 32 V
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 14. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
MRF7S21170HR3 MRF7S21170HSR3
9
RF Device Data
Freescale Semiconductor, Inc.
Zo=10
Zload
Zsource
f = 2060 MHz
f = 2220 MHz
f = 2220 MHz
f = 2060 MHz
VDD =28Vdc,I
DQ = 1400 mA, Pout =50WAvg.
f
MHz
Zsource
Zload
2060 4.57 -- j10.70 1.02 -- j3.54
2080 4.57 -- j10.38 0.99 -- j3.34
2100 4.57 -- j10.06 0.96 -- j3.14
2120 4.52 -- j9.72 0.93 -- j2.94
2140 4.40 -- j9.42 0.92 -- j2.76
2160 4.15 -- j9.12 0.91 -- j2.59
2180 4.44 -- j8.82 0.89 -- j2.42
2200 4.19 -- j8.53 0.88 -- j2.25
2220 4.12 -- j8.23 0.88 -- j2.09
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Figure 15. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
10
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
P3dB = 53.56 dBm (226 W)
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ = 1400 m, Pulsed CW
12 sec(on), 10% Duty Cycle, f = 2140 MHz
56
54
52
37 3938 41
40 4442
Actual
Ideal
P1dB = 52.75 dBm
(188 W)
57
55
51
43
Pout, OUTPUT POWER (dBm)
P6dB = 53.89 dBm (244 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
35343332
Test Impedances per Compression Level
Zsource
Zload
P3dB 4.43 -- j11.85 0.81 -- j2.87
Figure 16. Pulsed CW Output Power
versus Input Power @ 28 V
36
P3dB = 54.65 dBm (290 W)
Pin, INPUT POWER (dBm)
VDD =32Vdc,I
DQ = 1400 mA, Pulsed CW
12 sec(on), 10% Duty Cycle, f = 2140 MHz
56
54
52
37 3938 4140 4442
Actual
Ideal
P1dB = 53.54 dBm
(226 W)
57
55
43
Pout, OUTPUT POWER (dBm)
P6dB = 54.88 dBm (307 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
62
353433 45
Test Impedances per Compression Level
Zsource
Zload
P3dB 4.43 -- j11.85 0.72 -- j2.87
Figure 17. Pulsed CW Output Power
versus Input Power @ 32 V
MRF7S21170HR3 MRF7S21170HSR3
11
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
12
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
MRF7S21170HR3 MRF7S21170HSR3
13
RF Device Data
Freescale Semiconductor, Inc.
14
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
MRF7S21170HR3 MRF7S21170HSR3
15
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0May 2006 Initial Release of Data Sheet
1June 2006 Added Class C to description of parts, pg. 1
Changeded “” to “--” in the Device Output Signal Par bullet, pg. 1
Changed typ value from 9 to 18 in Part--to--Part Phase Variation characteristic description in Table 4, Typical
Performances, p. 2
Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7
2Aug. 2006 Added Greater Negative Source bullet to Features section, p. 1
Corrected Fig. 14, Single--Carrier W--CDMA Spectrum, to 3.84 MHz, p. 7
3Sept. 2006 Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
Added “Insertion” to Part--to--Part Phase Variation characteristic description in Table 4, Typical Performances,
p. 2
Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical
Performances, p. 2
Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3
Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations
and Values, p. 3
Added Figure 10, Digital Predistortion Correction, p. 6
Corrected Fig. 15, Single--Carrier W--CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9
4May 2007 Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard, p. 1
Added “Optimized for Doherty Applications” bullet to Features section, p. 1
Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for VGS(Q),
and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2
Updated verbiage in Typical Performances table, p. 3
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers
and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 7
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2and listed
operating characteristics and location of MTTF calculator for device, p. 8
Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test Signal, updated
to include output power level at functional test, p. 8
(continued)
16
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
REVISION HISTORY (continued)
Revision Date Description
5Apr. 2008 Corrected On Characteristics table IDvalue for VGS(th) from 270 Adc to 372 Adc and VDS(on) from
2.7 Adc to 3.72 Adc; tightened VGS(th) minimum and maximum values to match production
test values, p. 2
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test
Signal, to better represent production test signal, p. 8
6Mar. 2011 Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 15
7Feb. 2012 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2.
Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 11--12. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed
dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to
22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm
from 13.1--13.3 to 13.08--13.34.
Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 13--14. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed
dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to
13.08--13.34.
MRF7S21170HR3 MRF7S21170HSR3
17
RF Device Data
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Document Number: MRF7S21170H
Rev. 7, 2/2012