S10420-1006-01 - Hamamatsu Photonics K.K.

CCD image sensors

S11071/S10420-01 series

Improved etaloning characteristics,

High-speed type and low noise type available

www.hamamatsu.com 1

The S11071/S10420-01 series are back-thinned CCD image sensors designed for spectrometers. Two types consisting of

a high-speed type (S11071 series) and low noise type (S10420-01 series) are available with improved etaloning charac-

teristics. The S11071/S10420-01 series offer nearly ﬂ at spectral response characteristics with high quantum efﬁ ciency

from the UV to near infrared region.

Improved etaloning characteristics

High sensitivity over a wide spectral range and nearly

ﬂ at spectral response characteristics

High full well capacity and wide dynamic range

(with anti-blooming function)

High CCD node sensitivity: 8 μV/e- (S11071 series)

6.5 μV/e- (S10420-01 series)

Pixel size: 14 × 14 μm

Selection guide

Type no. Number of

total pixels

Number of effective

pixels

Image size

[mm (H) × mm (V)]

Readout speed

max.

(MHz)

Suitable

driver circuit

S11071-1004 1044 × 22 1024 × 16 14.336 × 0.224

10 C11288

S11071-1006 1044 × 70 1024 × 64 14.336 × 0.896

S11071-1104 2068 × 22 2048 × 16 28.672 × 0.224

S11071-1106 2068 × 70 2048 × 64 28.672 × 0.896

S10420-1004-01 1044 × 22 1024 × 16 14.336 × 0.224

0.5 C11287

S10420-1006-01 1044 × 70 1024 × 64 14.336 × 0.896

S10420-1104-01 2068 × 22 2048 × 16 28.672 × 0.224

S10420-1106-01 2068 × 70 2048 × 64 28.672 × 0.896

Improved etaloning characteristics

Etaloning is an interference phenomenon that occurs when the light

incident on a CCD repeatedly reﬂ ects between the front and back

surfaces of the CCD while being attenuated, and causes alternately

high and low sensitivity. When long-wavelength light enters a back-

thinned CCD, etaloning occurs due to the relationship between the

silicon substrate thickness and the absorption length. The S11071/

S10420-01 series back-thinned CCDs have achieved a signiﬁ cant im-

provement in etaloning by using a unique structure that is unlikely

to cause interference.

Etaloning characteristics (typical example)

Wavelength (nm)

Relative sensitivity (%)

900 1000950 960 970 980 990930910 940920

(Ta=25 °C)

Etaloning-improved type

Previous type

100

110

KMPDB0284EB

Spectrometers, etc.

Features Applications

CCD image sensors S11071/S10420-01 series

Structure

Absolute maximum ratings (Ta=25 °C)

Operating conditions (MPP mode, Ta=25 °C)

Parameter S11071 series S10420-01 series

Pixel size (H × V) 14 × 14 μm

Vertical clock phase 2-phase

Horizontal clock phase 4-phase

Output circuit Two-stage MOSFET source follower One-stage MOSFET source follower

Package 24-pin ceramic DIP (refer to dimensional outline)

Window material*1Quartz glass*2

Cooling Non-cooled

*1: Temporary window type (ex: S11071-1106N, S10420-1106N-01) is available upon request.

*2: Resin sealing

Parameter Symbol Min. Typ. Max. Unit

Operating temperature*3Topr -50 - +50 °C

Storage temperature Tstg -50 - +70 °C

Output transistor

drain voltage

S11071 series VOD -0.5 - +25 V

S10420-01 series -0.5 - +30

Reset drain voltage VRD -0.5 - +18 V

Output ampliﬁ er return voltage Vret -0.5 - +18 V

Overﬂ ow drain voltage VOFD -0.5 - +18 V

Vertical input source voltage VISV -0.5 - +18 V

Horizontal input source voltage VISH -0.5 - +18 V

Overﬂ ow gate voltage VOFG -10 - +15 V

Vertical input gate voltage VIG1V, VIG2V -10 - +15 V

Horizontal input gate voltage VIG1H, VIG2H -10 - +15 V

Summing gate voltage VSG -10 - +15 V

Output gate voltage VOG -10 - +15 V

Reset gate voltage VRG -10 - +15 V

Transfer gate voltage VTG -10 - +15 V

Vertical shift register clock voltage VP1V, VP2V -10 - +15 V

Horizontal shift register clock voltage VP1H, VP2H

VP3H, VP4H -10 - +15 V

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

*3: Package temperature

Parameter Symbol S11071 series S10420-01 series Unit

Min. Typ. Max. Min. Typ. Max.

Output transistor drain voltage VOD 12 15 18 23 24 25 V

Reset drain voltage VRD 14 15 16 11 12 13 V

Overﬂ ow drain voltage VOFD 11 12 13 11 12 13 V

Overﬂ ow gate voltage VOFG 0 13 14 0 12 13 V

Output gate voltage VOG 4 56456 V

Substrate voltage VSS - 0 - - 0 - V

Output ampliﬁ er return voltage Vret - 1 2 V

Test point

Input source VISV, VISH - VRD - - VRD - V

Vertical input gate VIG1V, VIG2V -9 -8 - -9 -8 - V

Horizontal input gate VIG1H, VIG2H -9 -8 - -9 -8 - V

Vertical shift register clock voltage High VP1VH, VP2VH 4 68468 V

Low VP1VL, VP2VL -9 -8 -7 -9 -8 -7

Horizontal shift register clock voltage

High VP1HH, VP2HH

VP3HH, VP4HH 468468

Low VP1HL, VP2HL

VP3HL, VP4HL -6 -5 -4 -6 -5 -4

Summing gate voltage High VSGH 4 68468 V

Low VSGL -6 -5 -4 -6 -5 -4

Reset gate voltage High VRGH 468468 V

Low VRGL -6 -5 -4 -6 -5 -4

Transfer gate voltage High VTGH 468468 V

Low VTGL -9 -8 -7 -9 -8 -7

External load resistance RL

2.0 2.2 2.4 90 100 110 k

CCD image sensors S11071/S10420-01 series

Electrical characteristics (Ta=25 °C)

Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

Parameter Symbol S11071 series S10420-01 series Unit

Min. Typ. Max. Min. Typ. Max.

Signal output frequency*4fc - 5 10 - 0.25 0.5 MHz

Vertical shift register

capacitance

-1004(-01)

CP1V, CP2V

- 200 - - 200 -

-1006(-01) - 600 - - 600 -

-1104(-01) - 400 - - 400 -

-1106(-01) - 1200 - - 1200 -

Horizontal shift register

capacitance

-1004(-01)/-1006(-01) CP1H, CP2H

CP3H, CP4H

-80- -80-pF

-1104(-01)/-1106(-01) - 160 - - 160 -

Summing gate capacitance CSG -10- -10-pF

Reset gate capacitance CRG -10- -10-pF

Transfer gate capacitance -1004(-01)/-1006(-01) CTG -30- -30-pF

-1104(-01)/-1106(-01) - 60 - - 60 -

Charge transfer efﬁ ciency*5CTE 0.99995 0.99999 - 0.99995 0.99999 - -

DC output level*4Vout 7 8 9 17 18 19 V

Output impedance*4Zo - 0.3 - - 10 - kΩ

Power consumption*4 *6P-

--4-mW

*4: The values depend on the load resistance. (S11071 series: VOD=15 V, RL=2.2 kΩ, S10420-01 series: VOD=24 V, RL=100 kΩ)

*5: Charge transfer efﬁ ciency per pixel, measured at half of the full well capacity

*6: Power consumption of the on-chip ampliﬁ er plus load resistance

Parameter Symbol S11071 series S10420-01 series Unit

Min. Typ. Max. Min. Typ. Max.

Saturation output voltage Vsat - Fw × Sv - - Fw × Sv - V

Full well capacity Vertical Fw 50 60 - 50 60 - ke-

Horizontal 150 200 - 250 300 -

CCD node sensitivity*7Sv 7 8 9 5.5 6.5 7.5 μV/e-

Dark current*8DS - 50 500 - 50 500

/pixel/s

Readout noise*9Nr - 23 28 - 6 15 e- rms

Dynamic range*10 Line binning DR 6520 8700 - 41700 50000 - -

Spectral response range λ-200 to

1100 --

200 to

1100 -nm

Photoresponse nonuniformity*11 PRNU - ±3 ±10 - ±3 ±10 %

*7: The values depend on the load resistance. (S11071 series: VOD=15 V, RL=2.2 kΩ, S10420-01 series: VOD=24 V, RL=100 kΩ)

*8: Dark current is reduced to half for every 5 to 7 °C decrease in temperature.

*9: S11071 series (temperature: 25 °C): fc=2 MHz, S10420-01 series (temperature: -40 °C): fc=20 kHz

*10: Dynamic range = Full well capacity / Readout noise

*11: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)

Fixed pattern noise (peak to peak)

Signal × 100

[%]Photoresponse nonuniformity =

CCD image sensors S11071/S10420-01 series

Spectral response (without window)*12

Dark current vs. temperature

Spectral transmittance characteristic of window material

KMPDB0303EA

*12: Spectral response with quartz glass is decreased according to

the spectral transmittance characteristic of window material.

Wavelength (nm)

(Typ. Ta=25 °C)

Quantum efficiency (%)

100

1200200 400 600 800 1000

Temperature (°C)

Dark current (e-/pixel/s)

0.01

100 (Typ.)

0.1

3020-50 -30-40 -20 -10 100

Wavelength (nm)

(Typ. Ta=25 °C)

Transmittance (%)

100

1200

100 300 400200 500 600 700 800 900

1000 1100

KMPDB0316EA

KMPDB0304EA

CCD image sensors S11071/S10420-01 series

KMPDC0343EB

KMPDC0269EC

Device structure (conceptual drawing of top view in dimensional outline)

S11071 series

S10420-01 series

Effective pixels

Horizontal

shift register

Thinning

23 22 21 20 19 18 17 16

6 7 8 9 11 12

12345

1024

2n signal output

4-bevel 2-bevel

4 blank pixels

2n signal output

4 blank pixels

6-bevel 6-bevel

3 4 5 10

V=16, 64

H=1024, 2048

Note: When viewed from the direction of the incident light, the horizontal shift register is

covered with a thick silicon layer (dead layer). However, long-wavelength light

passes through the silicon dead layer and may possibly be detected by the horizontal

shift register. To prevent this, provide light shield on that area as needed.

Horizontal

shift register

Note: When viewed from the direction of the incident light, the horizontal shift register is

covered with a thick silicon layer (dead layer). However, long-wavelength light

passes through the silicon dead layer and may possibly be detected by the horizontal

shift register. To prevent this, provide light shield on that area as needed.

Effective pixels

Horizontal

shift register

Thinning

23 22 21 20 19 18 17 16

6 7 8 9 11 12

12345

1024

2n signal output

4-bevel 2-bevel

4 blank pixels

2n signal output

4 blank pixels

6-bevel 6-bevel

3 4 5 10

V=16, 64

H=1024, 2048

Horizontal

shift register

CCD image sensors S11071/S10420-01 series

Timing chart (line binning)

KMPDC0270ED

Integration time

(shutter has to be open)

(shutter has to be closed) (shutter has to be closed)

P1V

P2H

P3H

Readout periodVertical binning period

Tpwv

Tovr

P2V, TG

P4H, SG

P1H

TovrhTpwh, Tpws

Tpwr

4...1043 1044: S11071/S10420-1004, -1006

4...2067 2068: S11071/S10420-1104, -1106

D3...D10, S1...S1024, D11...D18: S11071/S10420-1004, -1006

S1...S2048 : S11071/S10420-1104, -1106

D1 D2 D19 D20

123

3...21 22←16 + 6 (bevel): S11071/S10420-1004, -1104

3...69 70←64 + 6 (bevel): S11071/S10420-1006, -1106

Parameter Symbol S11071 series S10420-01 series Unit

Min. Typ. Max. Min. Typ. Max.

P1V, P2V, TG Pulse width*13 Tpwv 1 8 - 6 8 - μs

Rise and fall times*13 Tprv, Tpfv 20 - - 20 - - ns

P1H, P2H, P3H, P4H

Pulse width*13 Tpwh 50 100 - 1000 2000 - ns

Rise and fall times*13 Tprh, Tpfh 10 - - 10 - - ns

Pulse overlap time Tovrh 25 50 - 500 1000 - ns

Duty ratio*13 - 405060405060 %

Pulse width*13 Tpws 50 100 - 1000 2000 - ns

Rise and fall times*13 Tprs, Tpfs 10 - - 10 - - ns

Pulse overlap time Tovrh 25 50 - 500 1000 - ns

Duty ratio*13 - 405060405060 %

RG Pulse width Tpwr 5 50 - 100 1000 - ns

Rise and fall times Tprr, Tpfr 5 - - 5 - - ns

TG-P1H Overlap time Tovr 1 2 - 1 2 - μs

*13: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.

CCD image sensors S11071/S10420-01 series

KMPDA0223ED

Dimensional outline (unit: mm)

Index mark

38.10 ± 0.4

112

27.94 ± 0.3

A3.3 ± 0.35

0.25-0.03

+0.05

10.41 ± 0.25

10.03 ± 0.3

Photosensitive area

Type no.

S11071/

S10420

-1004(-01) 14.336 (H)

14.336 (H)

28.672 (H)

0.224 (V)

0.896 (V)

0.224 (V)

0.896 (V)

-1006(-01)

-1104(-01)

-1106(-01)

1.47

2.54 ± 0.130.46 ± 0.05

1.27 ± 0.2

1.27 ± 0.25

3.0 ± 0.5

Photosensitive surface

1.72 ± 0.17

Index mark

CCD image sensors S11071/S10420-01 series

Pin connections

Pin no. Symbol Function Remark

(standard operation)

1 OS Output transistor source RL=2.2 kΩ

2 OD Output transistor drain +15 V

3 OG Output gate +5 V

4 SG Summing gate Same pulse as P4H

5 Vret Output ampliﬁ er return +1 V

6 RD Reset drain +15 V

7 P4H CCD horizontal register clock-4

8 P3H CCD horizontal register clock-3

9 P2H CCD horizontal register clock-2

10 P1H CCD horizontal register clock-1

11 IG2H Test point (horizontal input gate-2) -8 V

12 IG1H Test point (horizontal input gate-1) -8 V

13 OFG Over ﬂ ow gate +13 V

14 OFD Over ﬂ ow drain +12 V

15 ISH Test point (horizontal input source) Connect to RD

16 ISV Test point (vertical input source) Connect to RD

17 SS Substrate GND

18 RD Reset drain +15 V

19 IG2V Test point (vertical input gate-2) -8 V

20 IG1V Test point (vertical input gate-1) -8 V

21 P2V CCD vertical register clock-2

22 P1V CCD vertical register clock-1

23 TG Transfer gate Same pulse as P2V

24 RG Reset gate

Pin no. Symbol Function Remark

(standard operation)

1 OS Output transistor source RL=100 kΩ

2 OD Output transistor drain +24 V

3 OG Output gate +5 V

4 SG Summing gate Same pulse as P4H

5 SS Substrate GND

6 RD Reset drain +12 V

7 P4H CCD horizontal register clock-4

8 P3H CCD horizontal register clock-3

9 P2H CCD horizontal register clock-2

10 P1H CCD horizontal register clock-1

11 IG2H Test point (horizontal input gate-2) -8 V

12 IG1H Test point (horizontal input gate-1) -8 V

13 OFG Over ﬂ ow gate +12 V

14 OFD Over ﬂ ow drain +12 V

15 ISH Test point (horizontal input source) Connect to RD

16 ISV Test point (vertical input source) Connect to RD

17 SS Substrate GND

18 RD Reset drain +12 V

19 IG2V Test point (vertical input gate-2) -8 V

20 IG1V Test point (vertical input gate-1) -8 V

21 P2V CCD vertical register clock-2

22 P1V CCD vertical register clock-1

23 TG Transfer gate Same pulse as P2V

24 RG Reset gate

S11071 series

S10420-01 series

CCD image sensors S11071/S10420-01 series

Driver circuits for CCD image sensor (S10420-01/S11071 series) C11287/C11288 [sold separately]

The C11287, C11288 are driver circuits designed for HAMAMATSU CCD image sensors S10420-01/S11071 series. The C11287, C11288

can be used in spectrometers, etc. when combined with the CCD image sensor.

Features

Built-in 14-bit A/D converter

Interface to computer: USB 2.0

Power supply: USB bus power operation (C11287)

DC+5 V operation (C11288)

Precautions (electrostatic countermeasures)

・

Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an

earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

・

Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

・Provide ground lines or ground connection with the work-ﬂ oor, work-desk and work-bench to allow static electricity to discharge.

・

Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the

amount of damage that occurs.

C11287

C11288

Related information

Precautions

∙ Notice

∙ Image sensors/Precautions

Technical information

∙ FFT-CCD area image sensor/Technical information

www.hamamatsu.com/sp/ssd/doc_en.html

CCD image sensors S11071/S10420-01 series

Cat. No. KMPD1120E06 Aug. 2012 DN

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

ype numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

he product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of August, 2012.