SLD1133VS - Sony Semiconductor

650nm Index-Guided Red Laser Diode

Description

The SLD1133VS is an index-guided red laser diode

for BCS. The wavelength is 20nm shorter than that

of the current diodes.

Features

•Small astigmatism (7µm typ.)

• Low operating current (60mA typ.)

• Small package (φ5.6mm)

•Single longitudinal mode

Applications

Bar code scanner

Structure

•AlGaInP MQW laser diode

•PIN photodiode to monitor laser beam output

Recommend Optical Power Output

5mW

Absolute Maximum Ratings (Tc = 25°C)

•Optical power output Pomax 7 mW

•Reverse voltage VRLD 2 V

PD 15 V

•Operating temperature Topr –10 to +70 °C

•Storage temperature Tstg –40 to +85 °C

– 1 – E96Z19D18-PS

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

SLD1133VS

M-274

Pin Configuration

Common

Bottom View

1. LD cathode

2. PD anode

3. Common

Connection Diagram

– 2 –

SLD1133VS

Electrical and Optical Characteristics (Tc = 25°C) Tc: Case temperature

Item

Threshold current

Operating current

Operating voltage

Wavelength

Radiation

angle

Positional

accuracy

Differential efficiency

Astigmatism

Monitor current

Ith

Iop

Vop

λp

θ⊥

θ//

∆X, ∆Y, ∆Z

∆φ//

∆φ⊥

ηD

Imon

Po = 5mW

Po = 5mW, VR= 5V

0.15

0.05

2.3

650

0.4

0.1

2.8

660

±80

±3

0.7

0.3

degree

µm

degree

mW/mA

µm

Symbol Conditions Min. Typ. Max. Unit

Perpendicular

Parallel

Position

Angle

– 3 –

SLD1133VS

Example of Representative Characteristics

IF – Forward current [mA]

Imon – Monitor current [mA]

Po – Optical output [mW]

Optical power output vs. Forward current characteristics

Optical power output vs. Monitor current characteristics

Angle [degree]

Relative radiant intensity

Far field pattern (FFP)

Tc – Case temperature [°C]

Monitor current vs. Temperature characteristics

Tc – Case temperature [°C]

Ith – Threshold current [mA]

Threshold current vs. Temperature characteristics

100600

00.2

4020–20 0 60

0.2

lmon-Monitor current [mA]

25°C

20 40 80

TC = 0°C50°C

Imon

PO = 5mW

0.1

4020–20 0 60

200

100

70°C25°CTC = 0°C50°C70°C

200–60 –40 –20 40 60

θ⊥

θ//

Po = 5mW

Tc = 25°C

80 80

– 4 –

SLD1133VS

645 650 655 660 665

Tc = 0°C

Tc = 25°C

Tc = 50°C

Tc = 70°C

Po = 5mW

Relative radiant intensity

Temperature dependence of spectrum

λ – Wavelength [nm]

– 5 –

SLD1133VS

645 650 655 660 665

Po = 1mW

Po = 3mW

Po = 5mW

Po = 7mW

Tc = 25°C

λ – Wavelength [nm]

Relative radiant intensity

Power output dependence of spectrum

– 6 –

SLD1133VS

Notes on Operation

Care should be taken for the following points when using this product.

(1) This product corresponds to a Class 3B product under IEC60825-1 and JIS standard C6802 "Laser Product

Emission Safety Standards".

(2) Eye protection against laser beams

Take care not to allow laser beams to enter your eyes under any circumstances.

For observing laser beams, ALWAYS use safety goggles that block laser beams. Usage of IR scopes, IR

cameras and fluorescent plates is also recommended for monitoring laser beams safely.

(3) Gallium Arsenide

This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be

potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature

or higher, or place the product in your mouth.

In addition, the following disposal methods are recommended when disposing of this product.

1. Engaging the services of a contractor certified in the collection, transport and intermediate treatment

of items containing arsenic.

2. Managing the product through to final disposal as specially managed industrial waste which is

handled separately from general industrial waste and household waste.

(4) Prevention of surge current and electrostatic discharge

Laser diodes are most sensitive to electrostatic discharge among semiconductors. When a large current is

passed through the laser diode for even an extremely short time, the strong light emitted from the laser

diode promotes deterioration and then destruction of the laser diode. Therefore, note that surge current

should not flow to the laser diode driving circuit from switches and others. Also, if the laser diode is handled

carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body.

Therefore, be extremely careful about overcurrent and electrostatic discharge.

(5) Use for special applications

This product is not designed or manufactured for use in equipment used under circumstances where

failure may pose a risk to life and limb, or result in significant material damage, etc.

Consult your Sony sales representative when investigating use for medical, vehicle, nuclear power control

or other special applications. Also, use the power supply that was designed not to exceed the optical power

output specified at the absolute maximum ratings.

LASER RADIATION

AVOID DIRECT EXPOSURE TO BEAM

LASER DIODE LASER DIODE

AVOID EXPOSURE

Laser radiation is

emitted from this

aperture.

This product complies with 21

CFR Part 1040.10 and 1040.11

Sony Corporation

6-7-35 Kitashinagawa,

Shinagawa-ku,Tokyo

141-0001 Japan

MAXIMUM OUTPUT 50 mW

WAVELENGTH 600 - 950 nm

CLASS III b LASER PRODUCT

– 7 –

SLD1133VS

Package Outline Unit: mm

SONY CODE

EIAJ CODE

JEDEC CODE

Reference

Slot 1.0

0.5

90˚

0.4

φ5.6 – 0.025

φ4.4 MAX

φ3.7 MAX

φ1.0 MIN

0.5 MIN

Window Glass

Reference

Plane

LD Chip

& Photo

Diode

0.25

2.6 MAX

∗1.26

1.2 ± 0.1

6.5

231

3 – φ0.45

PCD φ2.0

∗Optical

Distance = 1.35 ± 0.08

M-274 PACKAGE MASS 0.3g

M-274

Sony Corporation