SLD1133VS 650nm Index-Guided Red Laser Diode Description The SLD1133VS is an index-guided red laser diode for BCS. The wavelength is 20nm shorter than that of the current diodes. M-274 Features * Small astigmatism (7m typ.) * Low operating current (60mA typ.) * Small package (5.6mm) * Single longitudinal mode Absolute Maximum Ratings (Tc = 25C) * Optical power output Pomax 7 mW * Reverse voltage VR LD 2 V PD 15 V * Operating temperature Topr -10 to +70 C * Storage temperature Tstg -40 to +85 C Applications Bar code scanner Structure * AlGaInP MQW laser diode * PIN photodiode to monitor laser beam output Recommend Optical Power Output 5mW Connection Diagram Pin Configuration Common 3 2 LD PD 2 1 1 3 1. LD cathode 2. PD anode 3. Common Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E96Z19D18-PS SLD1133VS Electrical and Optical Characteristics (Tc = 25C) Item Symbol Tc: Case temperature Conditions Min. Typ. Max. Unit 50 65 mA Threshold current Ith Operating current Iop Po = 5mW 60 70 mA Operating voltage Vop Po = 5mW 2.3 2.8 V Wavelength p Po = 5mW 650 660 nm 24 30 40 degree 6 8 12 degree 80 m 3 degree 3 degree Radiation angle Positional accuracy Perpendicular Parallel // Position X, Y, Z Angle // Po = 5mW Po = 5mW Differential efficiency D Po = 5mW 0.15 0.4 0.7 mW/mA Astigmatism As Po = 5mW 0 7 15 m Monitor current Imon Po = 5mW, VR = 5V 0.05 0.1 0.3 mA -2- SLD1133VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics TC = 0C 25C 50C 70C Far field pattern (FFP) TC = 0C 25C 50C 70C 7 Po = 5mW Tc = 25C Relative radiant intensity Po - Optical output [mW] 6 5 Imon 4 3 2 // 1 0 20 0 40 60 80 100 -60 -40 IF - Forward current [mA] 0 0.2 Imon - Monitor current [mA] Threshold current vs. Temperature characteristics 200 -20 0 20 Angle [degree] 40 60 Monitor current vs. Temperature characteristics 0.2 100 10 -20 lmon-Monitor current [mA] Ith - Threshold current [mA] PO = 5mW 0 20 40 60 Tc - Case temperature [C] 0.1 0 -20 80 -3- 0 20 40 60 Tc - Case temperature [C] 80 SLD1133VS Temperature dependence of spectrum Po = 5mW Tc = 70C Relative radiant intensity Tc = 50C Tc = 25C Tc = 0C 645 650 655 - Wavelength [nm] -4- 660 665 SLD1133VS Power output dependence of spectrum Tc = 25C Po = 7mW Relative radiant intensity Po = 5mW Po = 3mW Po = 1mW 645 650 655 - Wavelength [nm] -5- 660 665 SLD1133VS Notes on Operation Care should be taken for the following points when using this product. (1) This product corresponds to a Class 3B product under IEC60825-1 and JIS standard C6802 "Laser Product Emission Safety Standards". LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM MAXIMUM OUTPUT WAVELENGTH 50 mW 600 - 950 nm CLASS III b LASER PRODUCT Sony Corporation AVOID EXPOSURE Laser radiation is emitted from this aperture. 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan (2) Eye protection against laser beams Take care not to allow laser beams to enter your eyes under any circumstances. For observing laser beams, ALWAYS use safety goggles that block laser beams. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) Gallium Arsenide This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. In addition, the following disposal methods are recommended when disposing of this product. 1. Engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. Managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) Prevention of surge current and electrostatic discharge Laser diodes are most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. Therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. Therefore, be extremely careful about overcurrent and electrostatic discharge. (5) Use for special applications This product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. Consult your Sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. Also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. -6- SLD1133VS Package Outline Unit: mm M-274 Reference Slot 0.4 1.0 0.5 90 3 1 2 0 5.6 - 0.025 4.4 MAX 3.7 MAX 1.0 MIN 1.2 0.1 Reference Plane 2 3 1 3 - 0.45 Optical Distance = 1.35 0.08 6.5 LD Chip & Photo Diode SONY CODE 2.6 MAX 0.5 MIN 1.26 0.25 Window Glass PCD 2.0 M-274 PACKAGE MASS 0.3g EIAJ CODE JEDEC CODE -7- Sony Corporation