DNU-JANTXSG117K - MICROSEMI

1. Product profile

1.1 General description

The X3G-OH047, X3G-OH048, X3T-OH047 and X3T-OH048 ar e sensitive magnetic field

sensors, employing the magneto-resistive effect of thin film permalloy. The sensors

contain two parallel supplied Wheatstone bridges at a relative angle of 45 to each other.

A rotating magnetic field in the surface parallel to the chip (x-y plane) will deliver two

independent sinusoidal output signals, one following a cos(2) and the other following

asin(2) function,  being the angle between sensor and field direction (see Figure 5 and

Figure 6).

The X3G-OH047, X3G-OH048, X3 T-OH047 and X3T-OH048 are suited for high precision

angle measurement applications under low field conditions (saturation field strength

25 kA/m).

The sensors can be operated at any frequency between DC and 1 MHz.

All type numbers shown in this data sheet are valid for a single-die (single sensor).

The double-die has two magnetic field sensors with electrical and magnetic parameters

which fulfill the specified single-die values and do not correlate to each other.

X3G-OH047; X3T-OH047;

X3G-OH048; X3T-OH048

Magnetic field sensor

Rev. 1 — 4 April 2011 Product specification

Table 1. Product overview

Type number Sensor Packing

X3G-OH047 double-die sawn wafer; on foil

X3G-OH048 single-die sawn wafer; on foil

X3T-OH047 double-die taped on reel

X3T-OH048 single-die taped on reel

Product specification Rev. 1 — 4 April 2011 2 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

1.2 Features and benefits

Accurate and reliable angle measurement

Mechanical robustness, contactless principle

Wear-free opera tion

Accuracy independent of mechanical tolerances

Extended temperature range

1.3 Applications

KMZ44 is an internal name which is visible on the die

Fig 1. Sensor die

001aan663

Steering angle and torsion Window wipers

Headlight adjustment Fuel level

Motor positioning Mirror position ing

Product specification Rev. 1 — 4 April 2011 3 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

1.4 Quick reference data

[1] Applicable for bridge 1 and bridge 2.

[2] VM=VO(max) Voffset. Periodicity of VM: sin (2) and cos(2), respectively.

[3]

[4] Bridge resistance between pad 5 to pad 1 and pad 4 to pad 2.

2. Pinning information

Table 2. Quick reference data

Tamb =25



C; Hext =25kA/m; V

CC = 5 V; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage - 5 9 V

VMpeak voltage see Figure 3 [1][2] 60 67 75 mV

Voffset offset voltage per supply voltage;

see Figure 3 [1] 2- +2mV/V

TCV(offset) offset voltage

temperature

coefficient

per supply voltage;

Tamb =40 C to +150 C;

see Figure 3

[1][3] 2- +2(V/V)/K

Rbridge bridge resistance [1][4] 2.7 3.2 3.7 k

TCV offset

Voffset at 150 CVoffset at 40– C–

150 C40– C–

--------------------------------------------------------------------------------------------------

Table 3. Pinning

Pad Symbol Description Simplified outline

1 ON1 output voltage bridge 1

2 ON2 output voltage bridge 2

3 GND common ground

4 OP2 output voltage bridge 2

5 OP1 output voltage bridge 1

CC common bridge supply voltage

001aan662

Product specification Rev. 1 — 4 April 2011 4 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

3. Ordering information

4. Circuit diagram

5. Limiting values

[1] Minimum stimulating magnetic field parallel to the chip surface (x-y plane) to achieve specified angular

accuracy.

Table 4. Orderin g information

Type number Package

Name Description Version

X3G-OH047 bare die double-die; sawn wafer; on foil OL-X3G-OH047

X3G-OH048 bare die single-die; sawn wafer; on foil OL-X3G-OH048

X3T-OH047 bare die double-die; taped on reel OL-X3T-OH047

X3T-OH048 bare die single-die; taped on reel OL-X3T-OH048

Fig 2. Device and test circu i t dia gram

008aaa264

OP1

ON1

OP2

ON2

OP1 GND ON1

cos

R12

R14R13

R11

bridge 1

X3G-OH047/8; X3T-OH047/8

OP2 ON2

sin

R22

R24R23

R21

bridge 2

V V V V

V V

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage - 9 V

Hext external magnetic field strength [1] 25 - kA/m

Tamb ambient temperature 40 +150 C

Product specification Rev. 1 — 4 April 2011 5 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

6. Characteristics

[1] Minimum stimulating magnetic field parallel to the chip surface (x-y plane) to achieve angular inaccuracy.

[2] Applicable for bridge 1 and bridge 2.

[3] VM=VO(max) Voffset. Periodicity of VM: sin(2) and cos(2), respectively.

[4]

[5] Bridge resistance between pad 5 to pad 1 and pad 4 to pad 2.

[6]

[7]

[8]

[9]

[10]

[11] ; Voffset = 0 V; inaccuracy of angular measurement due to deviations from ideal sinusoidal characteristics,

calculated from the third and fifth harmonics of the spectrum VO.

Table 6. Characteristics

Tamb =25



C; Hext =25kA/m

[1]; VCC = 5 V; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage - 5 9 V

VMpeak voltage see Figure 3 [2][3] 60 67 75 mV

TCVM peak voltage temperature

coefficient Tamb =40 C to +150 C[2][4] 0.30 0.36 0.42 %/K

Rbridge bridge resistance [2][5] 2.7 3.2 3.7 k

TCR(bridge) bridge resistance

temperature coefficient Tamb =40 C to +150 C[2][6] 0.24 0.27 0.29 %/K

Voffset offset voltage per supply voltage;

see Figure 3 [2] 2- +2mV/V

TCV(offset) offset voltage temperature

coefficient per supply voltage;

Tamb =40 C to +150 C;

see Figure 3

[2][7] 2- +2(V/V)/K

Vo(hys) hyster esi s ou tp u t vol tage see Figure 4 [2][8] 0 0.050.18%FS

angular velocity 0 - 1 MHz

k amplitude synchronism [9] 98.9 100 101.1 %

TCkamplitude synchronism

temperature coefficient Tamb =40 C to +150 C[10] 0.01 0 +0.01 %/K

 angular inaccuracy [11] 0 0.05 0.1 deg

TCVM VMat 150 CVMat 40– C–

VMat 25 C150 C40– C–

---------------------------------------------------------------------------------------------

TCRbridge

Rbridge at 150 CRbridge at 40– C–

Rbridge at 25 C150 C40– C–

-------------------------------------------------------------------------------------------------------

TCV offset

Voffset at 150 CVoffset at 40– C–

150 C40– C–

--------------------------------------------------------------------------------------------------

Vohys1VO1 67.513545VO1 67.545135–



---------------------------------------------------------------------------------------------------------------------------

Vohys2VO2 22.5900 VO2 22.5090–



---------------------------------------------------------------------------------------------------------------

kVM1

VM2

----------

TCkkat 150 Ckat 40– C–

kat 25 C150 C40– C–

----------------------------------------------------------------------------------------

 real meas

–=

Product specification Rev. 1 — 4 April 2011 6 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

Fig 3. Output signals rela ted to the direction of the magnetic field

Fig 4. Definition of hysteresis

008aaa265

(mV)

Voffset2 0

90 180 360

270

α (deg)

VO2

VM2

VO1

008aaa266

α (deg)

0 1359045

(mV) Vo(hys)2

VO1 VO2

Vo(hys)1

Product specification Rev. 1 — 4 April 2011 7 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

7. Bare die outline

Fig 5. Bare die outline (singl e die)

Table 7. Mechanical dime nsions for Figure 5

Symbol Parameter x y Radius/diameter Unit

LD die size 1150 1150 - m

LS sawing lane width 60 60 - m

RP reading point position 575 642 - m

RS sensitive area radius - - 480 m

PD pad diameter - - 110 m

1 position pad 1 108 230 - m

2 position pad 2 243 125 - m

3 position pad 3 489 95 - m

4 position pad 4 632 95 - m

5 position pad 5 900 125 - m

6 position pad 6 1032 200 - m

001aan691

345

x = 0,

y = 0

RPy

LSy

LDy

RPx

LDx

Hext

R13

R12

R11

R14

R22 R21

R24 R23

LSx

bridge 1 (cos)

bridge 2 (sin)

Product specification Rev. 1 — 4 April 2011 8 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

Fig 6. Bare die outline (double die)

001aan692

x = 0,

y = 0

RPy

LSy

LDy

RP1x

RP2x

LDx

bridge 1 (cos)

bridge 2 (sin)

LSx

Hext

345

910 11

R13

R12

R11

R14

R22 R21

R24 R23

Table 8. Mechanical dimensions for Figure 6

Symbol Parameter xyRadius/diameter Unit

LD die size 2360 1150 m

LS sawing lane width 60 60 m

RP1 reading point po sition 1 575 642 m

RP2 reading point po sition 2 1785 642 m

RS sensitive area radius - - 480 m

PD pad diameter - - 110 m

1 position pad 1 108 230 m

2 position pad 2 243 125 m

3 position pad 3 489 95 m

4 position pad 4 632 95 m

5 position pad 5 900 125 m

6 position pad 6 1032 200 m

7 position pad 7 1318 230 m

8 position pad 8 1453 125 m

9 position pad 9 1699 95 m

Product specification Rev. 1 — 4 April 2011 9 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

8. Packing information

8.1 Tape construction for X3G-OH047 and X3G-OH048

10 position pad 10 1842 95 m

11 position pad 11 2110 125 m

12 position pad 12 2242 200 m

Table 8. Mechanical dimensions for Figure 6 …continued

Symbol Parameter xyRadius/diameter Unit

Table 9. Wafer dimensions

Symbol Parameter Value Unit

WD wafer diameter 150 mm

WT wafer thickness 380 15 m

Fig 7. Tape cons truc tion

019aab732

liner (PET)

adhesive (acrylic)

base film (PE)

(38 μm)

(10 μm)

(65 μm)

Table 10. Material composition

Parameter Content Typical value Unit

Tot al thickness - 75 m

Adhesion - 55 / 20 g/mm

Ionic impurity Na+0.027 g/ml

K+<0.004 g/ml

Cl 0.045 g/ml

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xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx

xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx

Product specification Rev. 1 — 4 April 2011 10 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

Fig 8. Geometrical dimensions of frame

019aab727

Ø195

Ø3.175 h6 (2×) R (2×)

Ø227 -0.5

216

B01

ejector marks and sprue marks on this side

below the surface min 0.05 max 0.2

79.42

4 ±0.3

71.5 ±0.3

148

216

R1 max

0.8

60°

20 +2

02.5 +0.05

30°

0.2

B0.2

Product specification Rev. 1 — 4 April 2011 11 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

Fig 9. Film Frame Carrie r (FFC) with barcode label

019aab728

for example 69594.030

The barcode label consists of several numbers which are

explained below:

The first digits of the barcode show the batch number

The last three digits of the barcode show the wafer number

for example 69594.030

Product specification Rev. 1 — 4 April 2011 12 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

Fig 10. Wafer position to frame and double die position to wafer

019aab731

Wafer position to frame

double die parallel to flat

flat

Product specification Rev. 1 — 4 April 2011 13 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

8.2 Carrier tape for X3T-OH047 and X3T-OH048

Fig 11. Tape outline, carrier tape X3T-OH048

Table 11. Dimensions for Figure 11 “Tape outline, carrier tape X3T-OH048”

Item Symbol Specification

Dimension [mm] Tolerance

Overall dimensions

Tape width W 8 0.1

Thickness K 1.2 -

Distance G 0.75 -

Sprocket holes

Diameter D01.5 0.1

Distance E 1.75 0.1

Pitch[1] P040.1

Distance between center lines

Length direction P220.05

Width direction F 3.5 0.05

Compartments

Length A01.4 0.05

Width B01.4 0.05

Depth K00.8 0.05

Hole diameter D10.5 0.1

Pitch P 4 0.1

Device

Outline X3T-OH048

Rotation 20-

Carrier tape antistatic

Film thickness[2] T0.25 0.07

019aab730

feed direction

position of pad 1

E A-A

B-B

AA0D1

Product specification Rev. 1 — 4 April 2011 14 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

[1] Cumulate pitch error 0.2 over 10 pitch.

[2] Carbon loaded polystyrene 100 % recyclable.

Cover tape

Width W15.75 -

Film thickness T10.1 -

Bending radius

In winding direction R 30 -

Fig 12. Tape outline, carrier tape X3T-OH047

Table 12. Dimen sions for Figure 12 “Tape outline, carrier tape X3T-OH047”

Item Symbol Specification

Dimension [mm] Tolerance

Overall dimensions

Tape width W 8 0.1

Distance G 0.75 -

Sprocket holes

Diameter D01.5 0.1

Distance E 1.75 0.1

Pitch[1] P040.1

Table 11. Dimensions for Figure 11 “Tape outline, carrier tape X3T-OH048” …continued

Item Symbol Specification

Dimension [mm] Tolerance

P2/P3

detail Z

50:1

section

B-B

measurement method of

compartment dimensions

section

A-A

pad 1

feed direction 019aab729

F0/F2

Product specification Rev. 1 — 4 April 2011 15 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

[1] Cumulate pitch error 0.2 over 10 pitch.

[2] Carbon loaded polystyrene 100 % recyclable.

Distance between center lines

Sprocket hole / cavity center P220.05

Sprocket hole / cavity hole P320.05

Sprocket hole / cavity center F03.5 0.05

Sprocket hole / cavity hole F23.5 0.05

Compartments

Length A01.4 0.05

Width overall B02.7 0.05

Depth K00.5 0.05

Hole diameter D10.5 0.1

Pitch P140.1

Device

Outline X3T-OH047

Rotation 15-

Carrier tape antistatic

Film thickness[2] T0.25 0.07

Bend 0.3 -

Cover tape

Width W15.3 0.1

Film thickness T10.05 0.01

Bending radius

In winding direction R 30 -

Table 12. Dimen sions for Figure 12 “Tape outline, carrier tape X3T-OH047” …continued

Item Symbol Specification

Dimension [mm] Tolerance

Product specification Rev. 1 — 4 April 2011 16 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

9. Revision history

Fig 13. Chip position and pad 1 location for X3T-OH048

Fig 14. Chip position and pad 1 location for X3T-OH047

019aab734

pad 1

diagonale

camber P

019aab733

pad 1

Table 13. Revision history

Document ID Release date Data sheet status Change notice Supersedes

X3G_T_OH047_048 v.1 20110404 Product specification - -

Product specification Rev. 1 — 4 April 2011 17 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

10. Legal information

10.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

10.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. The product is not designed, authorized or warranted to be

suitable for use in medical, military, aircraft, space or life support equipment,

nor in applications where failure or malf unction of an NXP Semiconductors

product can reasonably be expected to result in personal injury, death or

severe property or environment a l damage. NXP Semiconductors accepts no

liability for inclusion and/or use of NXP Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property right s.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product specification Rev. 1 — 4 April 2011 18 of 19

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization fro m national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

10.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

11. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors X3G-OH047/8; X3T-OH047/8

Magnetic field sensor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 4 April 2011

Document identifier: X3G_T_OH047_048

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

12. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 2

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 3

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 4

4 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . 4

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Bare die outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

8 Packing information . . . . . . . . . . . . . . . . . . . . . 9

8.1 Tape construction for X3G-OH047 and

X3G-OH048 . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

8.2 Carrier tape for X3T-OH047 and X3T-OH048. 13

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

11 Contact information. . . . . . . . . . . . . . . . . . . . . 18

12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19