Document Number: 83630 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.5, 07-Nov-08 403
IL4216, IL4217, IL4218
Optocoupler, Phototriac Output,
High dV/dt, Low Input Current Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
POWER FACTOR CONSIDERATIONS
A snubber is not needed to eliminate false operation of the
TRIAC driver because of the IL4216, IL4217, IL4218 high
static and commutating dV/dt with loads between 1 and 0.8
power factors. When inductive loads with power factors less
than 0.8 are being driven, include a RC snubber or a single
capacitor directly across the device to damp the peak
commutating dV/dt spike. Normally a commutating dV/dt
causes a turning-off device to stay on due to the stored
energy remaining in the turning-off device.
Fig. 3 - Shunt Capacitance vs. Load Current vs. Power Factor
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 20 mA VF1.3 1.5 V
Breakdown voltage IR = 10 µA VBR 6.0 30 V
Reverse current VR = 6.0 V IR0.1 10 µA
Input capacitance VF = 0 V, f = 1.0 MHz CIN 40 pF
Thermal resistance, junction to lead RthjI 750 °C/W
OUTPUT
Repetitive peak off-state voltage IDRM = 100 µA
IL4216 VDRM 600 650 V
IL4217 VDRM 700 750 V
IL4218 VDRM 800 850 V
Off-state voltage ID(RMS) = 70 µA
IL4216 VD(RMS) 424 460 V
IL4217 VD(RMS) 484 536 V
IL4218 VD(RMS) 565 613 V
Off-state current VD = 600 V, Tamb = 100 °C ID(RMS) 10 100 µA
Reverse current VR = 600 V, Tamb = 25 °C IRMS 10 100 µA
On-state voltage IT = 300 mA VTM 1.7 3.0 V
On-state current PF = 1.0, VT(RMS) = 1.7 V ITM 300 mA
Surge (non-repetitive, on-state current) f = 50 Hz ITSM 3.0 A
Holding current VT = 3.0 V IH65 200 µA
Latching current VT = 2.2 V IL500 µA
LED trigger current VAK = 5.0 V IFT 0.7 mA
Critical rate of rise of off-state voltage VD = 0.67 VDRM, Tamb = 25 °C dV/dtcr 10 000 V/µs
VD = 0.67 VDRM, Tamb = 80 °C dV/dtcr 5000 V/µs
Critical rate of rise of voltage at current
commutation
VD = 230 VRMS,
ID = 300 mARMS, TJ = 25 °C dV/dtcrq 8V/µs
VD = 230 VRMS,
ID = 300 mARMS, TJ = 85 °C dV/dtcrq 7V/µs
Critical rate of rise of on-state current
commutation
VD = 230 VRMS,
ID = 300 mARMS, TJ = 25 °C dI/dtcrq 12 A/ms
Thermal resistance, junction to lead RthjI 150 °C/W
COUPLER
Capacitance (input to output) f = 1.0 MHz, VIO = 0 V CIO 0.8 pF
Critical rate of rise of coupled
input to output voltage IT = 0, VRM = VDM = 300 VAC dV(IO)/dt 5000 1.0 mA
iil4116_07
400350300
250
200150100
500
I - Load Current (mA)
CS- Shunt Capacitance (µF)
L
0.001
0.01
0.1
1
C (µF) = 0.0032 (µF) x 10 ^ (0.0066 I
L
(mA))
S
PF= 0.3
IF= 2.0 mA