Document Number: 83630 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.5, 07-Nov-08 401
Optocoupler, Phototriac Output, High dV/dt, Low Input Current
IL4216, IL4217, IL4218
Vishay Semiconductors
DESCRIPTION
The IL4216, IL4217, IL4218 consists of an AlGaAs IRLED
optically coupled to a pair of photosensitive non-zero
crossing SCR chips and are connected inversely parallel to
form a TRIAC. These three semiconductors are assembled
in a six pin 0.3 inch dual in-line package.
High input sensitivity is achieved by using an emitter follower
phototransistor and a cascaded SCR predriver resulting in
an LED trigger current of less than 1.3 mA (DC).
The use of a proprietary dV/dt clamp results in a static dV/dt
of greater than 10 kV/µs. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between MT1
and MT2 of the TRIAC. The FET clamps the base of the
phototransistor when conducting, disabling the internal SCR
predriver.
The blocking voltage of up to 800 V permits control of off-line
voltages up to 240 VAC, with a safety factor more than two,
and is sufficient for as much as 380 VAC. Current handling
capability is up to 300 mA RMS, continuous at 25 °C.
The IL4216, IL4217, IL4218 isolates low-voltage logic from
120, 240, and 380 VAC lines to control resistive inductive, or
capacitive loads including motors solenoids, high current
thyristors or TRIAC and relays.
FEATURES
High input sensitivity IFT = 1.3 mA
300 mA on-state current
High static dV/dt 10000 V/µs, typical
Very Low Leakage < 10 µA
Isolation test voltage 5300 VRMS
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
Solid state relay
Industrial controls
Office equipment
Consumer appliances
AGENCY APPROVALS
UL1577, file no. E52744 system code J
CSA 93751
DIN EN 60747-5-5 (VDE 0884) available with option 1
BSI IEC 60950; IEC 60065
•FIMKO
Note
For additional information on the available options refer to option information.
i179041
1
2
3
6
5
4
MT2
MT1
NC
A
C
NC
ORDER INFORMATION
PART REMARKS
IL4216 600 V VDRM, DIP-6
IL4217 700 V VDRM, DIP-6
IL4218 800 V VDRM, DIP-6
IL4216-X006 600 V VDRM, DIP-6 400 mil (option 6)
IL4216-X009 600 V VDRM, SMD-6 (option 9)
IL4217-X007 700 V VDRM, SMD-6 (option 7)
IL4217-X009 700 V VDRM, SMD-6 (option 9)
IL4218-X006 800 V VDRM, DIP-6 400 mil (option 6)
IL4218-X007 800 V VDRM, SMD-6 (option 7)
IL4218-X009 800 V VDRM, SMD-6 (option 9)
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83630
402 Rev. 1.5, 07-Nov-08
IL4216, IL4217, IL4218
Vishay Semiconductors Optocoupler, Phototriac Output,
High dV/dt, Low Input Current
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6.0 V
Forward current IF60 mA
Surge current IFSM 2.5 A
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.33 mW/°C
Thermal resistance Rth 750 °C/W
OUTPUT
Peak off-state voltage
IL4216 VDRM 600 V
IL4217 VDRM 700 V
IL4218 VDRM 800 V
RMS on-state current IDRM 300 mA
Single cycle surge ITSM 3.0 A
Power dissipation Pdiss 300 mW
Derate linearly from 25 °C 6.6 mW/°C
Thermal resistance Rth 150 °C/W
COUPLER
Creepage distance 7.0 mm
Clearance 7.0 mm
Storage temperature Tstg - 55 to + 150 °C
Ambient temperature Tamb - 55 to + 100 °C
Isolation test voltage VISO 5300 VRMS
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Lead soldering temperature (2) 5.0 s Tsld 260 °C
Document Number: 83630 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.5, 07-Nov-08 403
IL4216, IL4217, IL4218
Optocoupler, Phototriac Output,
High dV/dt, Low Input Current Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
POWER FACTOR CONSIDERATIONS
A snubber is not needed to eliminate false operation of the
TRIAC driver because of the IL4216, IL4217, IL4218 high
static and commutating dV/dt with loads between 1 and 0.8
power factors. When inductive loads with power factors less
than 0.8 are being driven, include a RC snubber or a single
capacitor directly across the device to damp the peak
commutating dV/dt spike. Normally a commutating dV/dt
causes a turning-off device to stay on due to the stored
energy remaining in the turning-off device.
Fig. 3 - Shunt Capacitance vs. Load Current vs. Power Factor
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 20 mA VF1.3 1.5 V
Breakdown voltage IR = 10 µA VBR 6.0 30 V
Reverse current VR = 6.0 V IR0.1 10 µA
Input capacitance VF = 0 V, f = 1.0 MHz CIN 40 pF
Thermal resistance, junction to lead RthjI 750 °C/W
OUTPUT
Repetitive peak off-state voltage IDRM = 100 µA
IL4216 VDRM 600 650 V
IL4217 VDRM 700 750 V
IL4218 VDRM 800 850 V
Off-state voltage ID(RMS) = 70 µA
IL4216 VD(RMS) 424 460 V
IL4217 VD(RMS) 484 536 V
IL4218 VD(RMS) 565 613 V
Off-state current VD = 600 V, Tamb = 100 °C ID(RMS) 10 100 µA
Reverse current VR = 600 V, Tamb = 25 °C IRMS 10 100 µA
On-state voltage IT = 300 mA VTM 1.7 3.0 V
On-state current PF = 1.0, VT(RMS) = 1.7 V ITM 300 mA
Surge (non-repetitive, on-state current) f = 50 Hz ITSM 3.0 A
Holding current VT = 3.0 V IH65 200 µA
Latching current VT = 2.2 V IL500 µA
LED trigger current VAK = 5.0 V IFT 0.7 mA
Critical rate of rise of off-state voltage VD = 0.67 VDRM, Tamb = 25 °C dV/dtcr 10 000 V/µs
VD = 0.67 VDRM, Tamb = 80 °C dV/dtcr 5000 V/µs
Critical rate of rise of voltage at current
commutation
VD = 230 VRMS,
ID = 300 mARMS, TJ = 25 °C dV/dtcrq 8V/µs
VD = 230 VRMS,
ID = 300 mARMS, TJ = 85 °C dV/dtcrq 7V/µs
Critical rate of rise of on-state current
commutation
VD = 230 VRMS,
ID = 300 mARMS, TJ = 25 °C dI/dtcrq 12 A/ms
Thermal resistance, junction to lead RthjI 150 °C/W
COUPLER
Capacitance (input to output) f = 1.0 MHz, VIO = 0 V CIO 0.8 pF
Critical rate of rise of coupled
input to output voltage IT = 0, VRM = VDM = 300 VAC dV(IO)/dt 5000 1.0 mA
iil4116_07
400350300
250
200150100
500
I - Load Current (mA)
CS- Shunt Capacitance (µF)
L
0.001
0.01
0.1
1
C (µF) = 0.0032 (µF) x 10 ^ (0.0066 I
L
(mA))
S
PF= 0.3
IF= 2.0 mA
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83630
404 Rev. 1.5, 07-Nov-08
IL4216, IL4217, IL4218
Vishay Semiconductors Optocoupler, Phototriac Output,
High dV/dt, Low Input Current
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 4 - LED Forward Current vs. Forward Voltage
Fig. 5 - Forward Voltage vs. Forward Current
Fig. 6 - Peak LED Current vs. Duty Factor, τ
Fig. 7 - Maximum LED Power Dissipation
Fig. 8 - On-State Terminal Voltage vs. Terminal Current
Fig. 9 - Maximum Output Power Dissipation
iil4116_01
1.41.31.21.1
0
5
10
15
20
25
30
35
VF- LED Forward Voltage (V)
IF- LED Current (mA)
1.0
iil4116_02
100101
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
TA= - 55 °C
T
A= 100 °C
T
A= 25 °C
iil4116_03
10-6 10-5 10-4 10-3 10-2 10-1 100101
10
100
1000
10 000
t - LED Pulse Duration (s)
I
f(pk)
- Peak LED Current (mA)
0.005
0.05
0.02
0.01
0.1
0.2
0.5
Duty Factor
t
τ
DF = /t
τ
iil4116_04
100806040200- 20- 40- 60
0
50
100
150
T - Ambient Temperature (°C)
P
LED - LED Power (mW)
A
500
400
300
200
100
- 100
- 200
- 300
- 400
- 500
0
- 3 - 1- 2 0 1 2 3
iil4116_05
V
T
- On-State Voltage - V(RMS)
I
T
- On-Site Current - mA(RMS)
iil4116_06
100806040200- 20- 40- 60
50
150
250
T - Ambient Temperature (°C)
P
LED
- LED Power (mW)
A
0
100
200
300
Document Number: 83630 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.5, 07-Nov-08 405
IL4216, IL4217, IL4218
Optocoupler, Phototriac Output,
High dV/dt, Low Input Current Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
i178004
0.010 (0.25)
typ.
0.114 (2.90)
0.130 (3.0)
0.130 (3.30)
0.150 (3.81)
0.031 (0.80) min.
0.300 (7.62)
typ.
0.031 (0.80)
0.035 (0.90)
0.100 (2.54) typ.
0.039
(1.00)
min.
0.018 (0.45)
0.022 (0.55)
0.048
0.022 (0.55)
0.248 (6.30)
0.256 (6.50)
0.335 (8.50)
0.343 (8.70)
Pin one ID
6
5
4
12
3
18°
3° to 9°
0.300 to 0.347
(7.62 to 8.81)
typ.
ISO method A
(0.45)
min.
0.315 (8.00)
0.020 (0.51 )
0.040 (1.02 )
0.300 (7.62)
ref.
0.375 (9.53)
0.395 (10.03 )
0.012 (0.30 ) typ.
0.0040 (0.102)
0.0098(0.249)
15° max.
Option 9
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
0.307 (7.8)
0.291 (7.4)
0.407 (10.36)
0.391 (9.96)
Option 6
0.315 (8.0)
min.
0.300 (7.62)
typ.
0.180(4.6)
0.160 (4.1)
0.331 (8.4)
min.
0.406 (10.3)
max.
0.028(0.7)
Option 7
18450
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83630
406 Rev. 1.5, 07-Nov-08
IL4216, IL4217, IL4218
Vishay Semiconductors Optocoupler, Phototriac Output,
High dV/dt, Low Input Current
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
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therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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