THYRISTOR MODULE PK(PD,PE)55FG UL;E76102 M Power Thyristor/Diode Module PK55FG series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 1600V are available. and electrically isolated mounting base make your mechanical design easy. 92 2 2 2 5 35 Internal Configurations K G 1300A 100A/s dv/dt 1000V/s di/dt IT(AV) 55A, IT(RMS) 86A, ITSM KG -6 Mx1 A1K2 1 K1 G1 A2 3 2 1 K2 A1K2 PK 4-TAB K1 A2 PE NAMEPLATE MAX 2 K2 3 K2 G2 K2 G2 Applications Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches K2 3 2 A1K2 1 K2 K1 G1 A2 UnitA PD Maximum Ratings Tj25 unless otherwise specified Ratings Symbol Item PK55FG40 PD55FG40 PE55FG40 PK55FG80 PD55FG80 PE55FG80 PK55FG120 PD55FG120 PE55FG120 PK55FG160 PD55FG160 PE55FG160 Unit VRRM Repetitive Peak Reverse Voltage 400 800 1200 1600 V VRSM Non-Repetitive Peak Reverse Voltage 480 960 1300 1700 V VDRM Repetitive Peak off-state Voltage 400 800 1200 1600 V Symbol Item ITAV Average On-state Current ITRMS R.M.S. On-state Current ITSM It 2 Conditions Single phase, half wave, 180conduction, Tc81 Single phase, half wave, 180conduction, Tc81 Surge On-state Current 1 2 I t Value for one cycle surge current 2 Cycle, 50/60HZ, Peak Value, non-repetitive Ratings Unit 55 A 86 A 1190/1300 7040 A A2S PGM Peak Gate Power Dissipation 10 W PGAV Average Gate Power Dissipation 1 W 3 A 10 V IFGM Peak Gate Current VFGM Peak Gate Voltage (Forward) VRGM Peak Gate Voltage (Reverse) di/dt VISO Critical Rate of Rise of On-state Current Isolation Breakdown VoltageR.M.S 2500 V Tj Operating Junction Temperature -40 to125 Storage Temperature Tstg Mounting Torque 5 IG100mA VD12VDRM di G /dt0.1A/s A.C. 1minute 100 V A/s -40 to125 MountingM5 Recommended Value 1.5-2.515-25 2.728 TerminalM5 Recommended Value 1.5-2.515-25 2.728 Nm fB 170 g Ratings Unit Mass Typical Value Electrical Characteristics Symbol Item IDRM Conditions Repetitive Peak off-state Current,max Tj125VDVDRM 15 mA IRRM Repetitive Peak Reverse Current,max Tj125VDVDRM 15 mA VTM On-state Voltage,max IT165A 1.6 V IGT Gate Trigger Current,max VD6VIT1A 50 mA VGT Gate Trigger Voltage,max VD6VIT1A 3 V Gate Trigger Voltage,min Tj125VD12VDRM 0.25 V Critical Rate of Rise of off-state Voltage,min Tj125VD23VDRM 1000 V/s Junction to case 0.50 /W VGD dv/dt Rthj-cThermal Impedance,max markThyristor and Diode part. No markThyristor part SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com PK(PD,PE)55FG GateCharacteristics On-StateVoltagemax VFGM10V PG M PG AV W 10 W On-StateCurrentA IFGMA GateVoltageV VGD GateCurrentmA SurgeOn-StateCurrentRating Non-Repetitive PerOneElement HZ HZ =start Timecycles 1 On-StateVoltageV TransientThermalImpedancej-c/W SurgeOn-StateCurrentA = Maximum . TransientThermalImpedance . . . . JunctiontoCase PerOneElement . Timetsec