SPA11N80C3
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current2) IDTC=25 °C A
TC=100 °C
Pulsed drain current3) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=2.2 A, VDD=50 V 470 mJ
Avalanche energy, repetitive tAR
3),4) EAR ID=11 A, VDD=50 V
Avalanche current, repetitive tAR
3),4) IAR A
MOSFET dv/dt ruggedness dv/dtVDS=0…640 V V/ns
Gate source voltage VGS static V
AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj, Tstg °C
Mounting torque M2.5 screws 50 Ncm
Value
11
7.1
33
±30
34
-55 ... 150
0.2
11
50
±20
VDS 800
V
RDS(on)max @ Tj = 25°C 0.45 Ω
Qg,typ 64 nC
Product Summary
Type Package Marking
SPA11N80C3 PG-TO220-3 11N80C3
Rev. 2.93
Page 1
2018-02-12
SPA11N80C3
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current ISA
Diode pulse current3) IS,pulse 33
Reverse diode dv/dt5) dv/dt4V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 3.7 K/W
RthJA leaded - - 80
Soldering temperature,
wave soldering only allowed at leads
Tsold
1.6 mm (0.063 in.)
from case for 10s - - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 800 - - V
Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=11 A -870 -
Gate threshold voltage VGS(th) VDS=VGS, ID=0.68 mA 2.1 33.9
Zero gate voltage drain current IDSS
VDS=800 V, VGS=0 V,
Tj=25 °C - - 20 µA
VDS=800 V, VGS=0 V,
Tj=150 °C -100 -
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on)
VGS=10 V, ID=7.1 A,
Tj=25 °C -0.39 0.45 Ω
VGS=10 V, ID=7.1 A,
Tj=150 °C -1.05 -
Gate resistance RGf=1 MHz, open drain -1.2 -Ω
Values
Thermal resistance, junction -
ambient
Value
TC=25 °C
11
Rev. 2.93
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2018-02-12
SPA11N80C3
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -1600 -pF
Output capacitance Coss -65 -
Effective output capacitance, energy
related6) Co(er) -50 -
Effective output capacitance, time
related7) Co(tr) -140 -
Turn-on delay time td(on) -25 -ns
Rise time tr-15 -
Turn-off delay time td(off) -72 -
Fall time tf-10 -
Gate Charge Characteristics
Gate to source charge Qgs -8-nC
Gate to drain charge Qgd -30 -
Gate charge total Qg-64 85
Gate plateau voltage Vplateau -5.5 -V
Reverse Diode
Diode forward voltage VSD
VGS=0 V, IF=IS=11 A,
Tj=25 °C -11.2 V
Reverse recovery time trr -550 -ns
Reverse recovery charge Qrr -10 -µC
Peak reverse recovery current Irrm -33 -A
6) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
7) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=400 V,
VGS=0/10 V, ID=11 A,
RG=7.5 ?, Tj = 25°C
VDD=640 V, ID=11 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
5) ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
4) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
VR
=400 V,
IF=IS=11 A,
diF/dt=100 A/µs
2) Limited only by maximum temperature
3) Pulse width tp limited by Tj,max
1) J-STD20 and JESD22
Rev. 2.93
Page 3
2018-02-12
SPA11N80C3
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ZthJC=f(tP)ID=f(VDS); Tj=25 °C; tp=10 µs
parameter: D=t p/Tparameter: VGS
0
10
20
30
40
0 25 50 75 100 125 150
TC [°C]
Ptot [W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
1 10 100 1000
VDS [V]
ID [A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
5 V
5.5 V
6 V
6.5 V
10 V
20 V
0
10
20
30
40
0 5 10 15 20 25
VDS [V]
ID [A]
limited by on-state
resistance
Rev. 2.93
Page 4
2018-02-12
SPA11N80C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C; tp=10 µs RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=7.1 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max; tp=10 µs
parameter: Tj
typ
98 %
0
0.2
0.4
0.6
0.8
1
1.2
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
25 °C
150 °C
0
10
20
30
40
0 2 4 6 8 10
VGS [V]
ID [A]
6 V
10 V 20 V
4.5 V
5 V
5.5 V
0
3
6
9
12
15
18
21
0 5 10 15 20 25
VDS [V]
ID [A]
4 V 4.5 V 5 V
6 V
6.5 V
10 V
20 V
0.8
1
1.2
1.4
1.6
1.8
0 5 10 15 20 25 30
ID [A]
RDS(on) [Ω]
Rev. 2.93
Page 5
2018-02-12
SPA11N80C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=11 A pulsed IF=f(VSD); tp=10 µs
parameter: VDD parameter: Tj
11 Avalanche energy 12 Drain-source breakdown voltage
EAS=f(Tj); ID=2.2 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
25 °C
150 °C
150°C (98%)
25°C (98°C)
102
101
100
10-1
00.5 11.5 2
VSD [V]
IF [A]
160 V
640 V
0
2
4
6
8
10
0 10 20 30 40 50 60 70
Qgate [nC]
VGS [V]
680
720
760
800
840
880
920
960
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
0
100
200
300
400
500
25 50 75 100 125 150
Tj [°C]
EAS [mJ]
Rev. 2.93
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2018-02-12
SPA11N80C3
13 Typ. capacitances 14 Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(V DS)
0
2
4
6
8
10
12
0 100 200 300 400 500 600 700 800
VDS [V]
Eoss [µJ]
Ciss
Coss
Crss
104
103
102
101
100
0 100 200 300 400 500 600 700 800
VDS [V]
C [pF]
Rev. 2.93
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2018-02-12
SPA11N80C3
Definition of diode switching characteristics
Rev. 2.93
Page 8
2018-02-12
SPA11N80C3
Outline PGTO220 FullPAK
Rev. 2.93
Page 9
2018-02-12
DIMENSIONS MIN. MAX.
A2
H
b
D
c
b2
E
e
L
Q
øP
L1
D1
A
A1
2.86
2.42
2.54
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
3.00
12.78
8.97
29.75
0.90
0.63
1.51
16.15
3.50
3.30
3.45
13.75
10.65
9.83
MILLIMETERS
4.50
2.34
4.90
2.85
b1 0.95 1.38
b4 0.65 1.51
b3 0.65 1.38 1
SCALE
Z8B00003319
REVISION
ISSUE DATE
EUROPEAN PROJECTION
07
27.01.2017
05mm
DOCUMENT NO.
5:1
2 3 4
1 2 3