4/10/03
Page 1 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M MOC216-M MOC217-M
DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a
monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
package. They are ideally suited for high density applications, and eliminate the need for
through–the–board mounting.
FEATURES
• UL Recognized (File #E90700, Volume 2)
• VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M)
• Convenient Plastic SOIC–8 Surface Mountable Package Style
•Low LED Input Current Required, for Easier Logic Interfacing
• Standard SOIC–8 Footprint, with 0.050” Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input–Output Isolation of 2500 Vac (rms) Guaranteed
APPLICATIONS
•Low power Logic Circuits
• Interfacing and coupling systems of different potentials and impedances
•Telecommunications equipment
•Portable electronics
Marking Information:
• MOC215-M = 215
• MOC216-M = 216
• MOC217-M = 217
BASE
N/C
ANODE
CATHODE
1
2
3
4 5
6
7
8
EMITTER
COLLECTOR
N/C
N/C
4/10/03
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© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M MOC216-M MOC217-M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified)
Rating Symbol Value Unit
EMITTER
Forward Current - Continuous I
F
60 mA
Forward Current - Peak (PW = 100 µs, 120 pps) I
F
(pk) 1.0 A
Reverse Voltage V
R
6.0 V
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C P
D
90
0.8
mW
mW/°C
DETECTOR
Collector-Emitter Voltage V
CEO
30 V
Collector-Base Voltage V
CBO
70 V
Emitter-Collector Voltage V
ECO
7.0 V
Collector Current-Continuous I
C
150 mA
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C P
D
150
1.76
mW
mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2)
(60 Hz, 1 minute duration) V
ISO
2500 Vac(rms)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C P
D
250
2.94
mW
mW/°C
Ambient Operating Temperature Range T
A
-40 to +100 °C
Storage Temperature Range T
stg
-40 to +125 °C
4/10/03
Page 3 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M MOC216-M MOC217-M
** Typical values at T
A
= 25°C unless otherwise noted.
1. Input-Output Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2,500 V
AC(RMS)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(RMS)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
Characteristic Symbol Min Typ** Max Unit
EMITTER
Forward Voltage (I
F
= 1.0 mA) V
F
— 1.07 1.3 V
Reverse Leakage Current (V
R
= 6.0 V) I
R
— 0.001 100 µA
Capacitance C—18— pF
DETECTOR
Collector-Emitter Dark Current
(V
CE
= 5.0 V, T
A
= 25°C) I
CEO
— 1.0 50 nA
(V
CE
= 5.0 V, T
A
= 100°C) — 1.0 — µA
Collector-Emitter Breakdown Voltage (I
C
= 100 µA) BV
CEO
30 100 — V
Emitter-Collector Breakdown Voltage (I
E
= 100 µA) BV
ECO
7.0 10 — V
Collector-Emitter Capacitance (f = 1.0 MHz, V
CE
= 0) C
CE
— 7.0 — pF
COUPLED
Output Collector Current
(4)
MOC215-M
MOC216-M
MOC217-M
(I
F
= 1.0 mA, V
CE
= 5.0 V) CTR
20
50
100
—
—
—
—
—
—
%
Collector-Emitter Saturation Voltage (I
C
= 100µA, I
F
= 1.0mA) V
CE(sat)
——0.4 V
Tu r n-On Time (I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10) t
on
— 4.0 — µs
Tu r n-Off Time (I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10) t
off
— 4.0 — µs
Rise Time (I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10) t
r
— 3.0 — µs
Fall Time (I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10) t
f
— 3.0 — µs
Input-Output Isolation Voltage
(1,2,3)
(f = 60 Hz, t = 1.0 min.) V
ISO
2500 — — Vac(rms)
Isolation Resistance
(2)
(V
I-O
= 500 V) R
ISO
10
11
——
Ω
Isolation Capacitance
(2)
(V
I-O
= 0, f = 1.0 MHz) C
ISO
— 0.2 — pF
4/10/03
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© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M MOC216-M MOC217-M
Fig. 2 Output Curent vs. Input Current
I
F
- LED INPUT CURRENT (mA)
0.1 1 10 100
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.01
0.1
1
10
V
CE
= 5V
NORMALIZED TO I
F
= 10 mA
Fig. 3 Output Current vs. Ambient Temperature
TA - AMBIENT TEMPERATURE ( oC)
-80 -60 -40 -20 0 20 40 60 80 100 120
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.1
1
10
NORMALIZED TO T
A
= 25
o
C
Fig. 4 Output Current vs. Collector - Emitter Voltage
VCE - COLLECTOR -EMITTER VOLTAGE (V)
012345678910
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
3.5
IF
= 10 mA
NORM ALIZED TO V
CE
= 5V
Fig. 5 Dark Current vs. Ambient Temperature Fig. 6 Normalized t
on
vs. R
BE
020406080100 0.01 0.1 1 10 100
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
NORMALIZED t
on
0.1
1
10
100
1000
10000
V
CE
=10V
IF - LED FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= 55°C
T
A
= 25°C
T
A
= 100°C
V
CC
= 10V
I
C
= 2mA
R
L
= 100Ω
Normalized to:
t
on
at R
BE
= Open
4/10/03
Page 5 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M MOC216-M MOC217-M
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.0
0.8
0.9
IF = 20mA
IF = 10 mA
IF = 5mA
Fig. 8 CTR vs. R
BE
(Saturated)
R
BE
- BASE RESISTANCE (kΩ)
10 100 1000
NORMALIZED CTR
VCE = 0.3V, TA = 25°C
Normalized to:
CTR at RBE = Open
0.0
0.2
0.4
0.6
1.0
1.2
1.4
1.6
0.8
Fig. 7 Normalized t
off
vs. R
BE
R
BE
- BASE RESISTANCE (MΩ)
0.01 0.1 1 10 100
NORMALIZED toff
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.0
0.8
0.9
IF = 20mA
IF = 10 mA
IF = 5mA
Fig. 9 CTR vs. R
BE
(Unsaturated)
R
BE
- BASE RESISTANCE (kΩ)
10 100 1000
NORMALIZED CTR
VCE = 5V, TA = 25°C
Normalized to:
CTR at RBE = Open
VCC = 10V
IC = 2mA
RL = 100Ω
Normalized to:
toff at RBE = Open
4/10/03
Page 6 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M MOC216-M MOC217-M
Figure 10. Switching Time Test Circuit and Waveforms
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
trtf
INPUT
IF RL
RBE
VCC = 10V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce IC = 2 mA
Package Dimensions (Surface Mount) 8-Pin Small Outline
Lead Coplanarity : 0.004 (0.10) MAX
0.202 (5.13)
0.182 (4.63)
0.021 (0.53)
0.011 (0.28) 0.050 (1.27)
TYP
0.164 (4.16)
0.144 (3.66)
0.244 (6.19)
0.224 (5.69)
0.143 (3.63)
0.123 (3.13)
0.008 (0.20)
0.003 (0.08)
0.010 (0.25)
0.006 (0.16)
SEATING PLANE
0.024 (0.61)
0.050 (1.27)
0.155 (3.94)
0.275 (6.99)
0.060 (1.52)
4/10/03
Page 7 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M MOC216-M MOC217-M
ORDERING INFORMATION
MARKING INFORMATION
Option
Order
Entry
Identifier Description
VVVDE 0084
R1 R1 Tape and reel (500 units per reel)
R1V R1V VDE 0884, Tape and reel (500 units per reel)
R2 R2 Tape and reel (2500 units per reel)
R2V R2V VDE 0884, Tape and reel (2500 units per reel)
1
2
6
43 5
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘3’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
215
SYYXV
4/10/03
Page 8 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M MOC216-M MOC217-M
Carrier Tape Specifications
Reflow Profile
4.0 ± 0.10
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
5.5 ± 0.05
12.0 ± 0.3
8.0 ± 0.10
0.30 MAX
8.3 ± 0.10
3.50 ± 0.20
0.1 MAX 6.40 ± 0.20
5.20 ± 0.20
Ø1.5 ± 0.1/-0
Ramp up = 2–10°C/sec • Peak reflow temperature: 245°C (package surface temperature)
• Time of temperature higher than 183°C for 120–180 seconds
• One time soldering reflow is recommended
230°C, 10–30 s
Time (Minute)
0
300
250
200
150
100
50
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Temperature (°C)
Time above 183°C, 120–180 sec
245°C peak
4/10/03
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Page 9 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M MOC216-M MOC217-M
