RPI-124
Photointerrupter, Ultraminiature type
Applications
Optical control equipment
Cameras
Floppy disk drives
Features
1) Ultra-small.
2) High-precision position detection
(slit width = 0.15mm).
3) Minimal influence from stray light.
4)
Low collector-emitter saturation voltage.
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
Anode
Cathode
Collector
Emitter
Cross-section A-A
Gap
Optical axis center
Through hole
A
A
2-R0.3
Max.0.3
C0.7
4 (bottom)
2.6
3.9
1
1
2.3
3.3
4-0.2
(3)
(1.5)
4-0.5
0.15±0.1
4-0.4
(2)
2
4-φ0.8
3
2.5±0.5
Fig.1 Relative output current vs.
distance ( )
RELATIVE COLLECTOR CURRENT : Ic (
%
)
DISTANCE : d (mm)
0
0
25
50
75
100
125
12 3 4 5
d
Fig.4 Relative output current vs.
distance ( )
RELATIVE COLLECTOR CURRENT : Ic (
%
)
DISTANCE : d (mm)
0
0
25
50
75
100
125
12 3 4 5
d
Fig.2 Forward current falloff
FORWARD CURRENT : IF (mA)
AMBIENT TEMPERATURE : Ta (°C)
−20 0 40 60 8020 100
0
20
10
30
40
50
Fig.10 Output characteristics
tdtrtf
10%
90%
RL
VCC
td :
tr :
tf :
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
Input
Input
Output
Output
COLLECTOR CURRENT : Ic (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0
0.5
1
1.5
2
2.5
2046108
40mA
30mA
20mA
10mA
IF=50mA
Fig.11 Response time measurement circuit
Fig.8 Response time vs.
collector current
RESPONSE TIME : t (µs)
COLLECTOR CURRENT : Ic (mA)
1010.10.05
10
100
1
RL=1kΩ
RL=500Ω
RL=100Ω
Fig.9 Dark current vs.
ambient temperature
DARK CURRENT : ID (nA)
AMBIENT TEMPERATURE : Ta (°C)
100
1000
100
10
1
0.1
7550250−25
VCE=30V
VCE=20V
VCE=10V
Fig.6 Relative output vs. ambient
temperature
RELATIVE COLLECTOR CURRENT : Ic (
%
)
AMBIENT TEMPERATURE : Ta (°C)
−40 −20 0 20406080100
0
20
40
60
80
100
120
160
140
Fig.7 Collector current vs.
forward current
COLLECTOR CURRENT : Ic (mA)
FORWARD CURRENT : IF (mA)
01020304050
0
1
2
3
4
5VCE=5V
0.40.2 0.6 1.00.8 1.2 1.4 1.81.6
0
20
40
10
30
50
FORWARD VOLTAGE : VF (V)
FORWARD CURRENT : IF (mA)
Fig.3 Forward current vs. forward
voltage
0.40.2 0.6 1.00.8 1.2 1.4 1.81.6
0
20
40
10
30
50
75
°C
50
°C
25
°C
0
°C
−25
°C
POWER DISSIPATION /
COLLECTOR POWER DISSIPATION : P
D
/ Pc (mW)
AMBIENT TEMPERATURE : Ta (°C)
−25
0
20
40
60
80
100
025 50 75 85 100
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
PD PC
Parameter Symbol
VF
IR
ICEO
λ
P
IC
VCE(sat)
tr tf
Min.
−
−
−
−
0.3
−
−
Typ.
1.3
−
−
800
−
−
10
Max.
1.6
10
0.5
−
1.5
0.3
−
Unit
VI
F=50mA
VR=5V
VCE=10V
−
VCE=5V, IF=20mA
IF=20mA, IC=0.15mA
VCC=5V, IF=20mA, RL=100Ω
µA
µA
nm
mA
V
µs
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Cut-off frequency
∗ Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
λ
P
fCIF=50mA
−
−1−MHz
−950 −nm
Maximum sensitivity wavelength
λ
P−800 −nm
∗ This product is not designed to be protected against electromagnetic wave.
VCC=5V, IC=1mA, RL=100Ω
tr tf
Response time −10 −µs
Photo
transistor
Infrared
light
emitter
diode
Parameter Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
−25 to +85
−30 to +100
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
V
mA
mW
°C
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input(LED)
Output
photo-
transistor
()