COMPLEMENTARY HIGH-POWER TRANSISTORS SILICON General Purpose-Amplitier and Switching Application.. FEATURES: * Collector-Emitter Sustaining Volta ge - Vceojsusy* 120 (Min)- TIPSSD,TIP36D 140V (Min)- TIP3SE, TIP36E 160V (Min)- TIP3SF,TIP36F * Current Gain-Bandwidth Product- f= 3.0MHz(Min)@I,= 1A MAXIMUM RATINGS NPN PNP TIP35D TIP36D TIP35E TIP36E TIP35F TIP36F 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 120-160 VOLTS 125 WATTS TO-247 (3P) To , TEMPERATURE(C) Characteristic Symbol | TIP35D | TIP35E | TIP35F | Unit TIP36D | TIP3SE | TIP36F Collector-Emitter Voitage Veto 120 140 160 V Coliector-Base Voltage Vero 160 180 200 V Emitter-Base Voltage Vezo 5 Vv Collector Current - Continuous Io 25 A - Peak 40 Base Current ls 5 A Total Power Dissipation@T, = 25C Py 125 Ww Derate above 25C 1.0 wrc Operating and Storage Junction Ty: Ts7 C Temperature Range -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rje 1.0 C FIGURE -1 POWER DERATING 150 @ 425 E 5 10 & 75 @ a E 50 S 2 e 0 0 2 50 75 400 125 150 PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR MILLIMETERS DIM MIN MAX A 20.63 | 22.38 B 15.38 | 16.20 c 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 | 1284 G 420 450 H 1.82 2.46 | 2.92 3.23 J 0.89 153 K 5.26 5.66 L 18.50 | 21.50 M 476 5.24 O 3.25 3.65TIP35D,TIP35E, TIP35F NPN / TIP36D,TIP36E, TIP36F PNP Caen ees eeee rere reer ee ences ee rene ence een eee eee eee eee eee cee LE ST aT EE TE ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwse noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (1) ViBR)cEO Vv (lp =30 mA, I,= 0 ) TIP35D,TIP36D 120 TIP35E,TIP36E 140 TIPS5SF,TIP36F 160 Collector Cutoff Current logo mA (Vog= 90 V, Ip= 0) 1.0 Collector Cutoff Current lees ; mA (Vog 160 V, Vap=0 ) TIP35D,TIP36D 0.7 (Veg 180 V, Vpg= 0 ) TIP35E, TIP36E 0.7 (Veg= 200 V, Vgg= 0 ) TIP35F, TIPS6F 0.7 Emitter-Base Cutoff Current lego mA (Vep= 5.0 V, I= 0) 1.0 ON. CHARACTERISTICS (1) DC Current Gain hee (p= 1.5 A, Veg= 4.0V ) 25 (lg= 15 A, Veg= 4.0V ) 8.0 Collector-Emitter Saturation Voitage Voetsat) Vv (Ip F15A, I, =3.0A) 2.5 (Ip? 25 A,I,= 6.25 A} 5.0 Base-Emitter On Voitage Veejon) V (Ip= 15 A, Vog= 4.0 V) 2.0 (ig= 25 A, Veg= 4.0 V ) 4.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product . fy MHz ~ (l = 1.0 A, Veg = 10 V, f = 1.9 MHz ) 3.0 Small-Signal Current Gain line (|g = 1.0A, Vog = 4.0 V, f = 1.0 KHz) 12 SWITCHING CHARACTERISTICS Turn On Time ic= 15A, Ip4= -lp2 1.5A ton 1.2 us Off Time Vagiom= 4-15V, R= 2 2 t ott 0.9 us (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f, =[h, | fresrFIG-2 DC CURRENT GAIN Vcex4.0V Ty=25C hre , DC CURRENT GAIN 01 0.2 05 1.0 2.0 5.0 10 20 50 ig , COLLECTOR CURRENT (AMP) FIG-4 TURN-ON TIME loflg=10 Vec=30V Ty228C Mpe(orr)2V t, TIME (us) 2 a 0.3 05 1.0 2.0 5.0 10 20 30 Ic , COLLECTOR CURRENT (AMP) FIG-6 ACTIVE REGION SAFE OPERATING AREA - Bording Wire Limit Second Breakdown Limit - Thermally Limit T o=25C(Single Puse) TIP35D, TIP35E,TIPS6E TIP35F,TIP36F IC , COLLECTOR CURRENT (Amp) 2 5 10 20 50 120 140 160 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) TIP35D,TIP35E,TIP35F NPN / TIP36D,TIP36E,TIP36F PNP 22 eee ene cn nen ecee enna ence ence ee eee ee eee ee t, TIME (us) Ic, COLLECTOR CURRENT (Amp.} FiG-3 TURN-OFF TIME icflg=10 lp1*lp2 Veo=30V Tye28C 03. 05 1.0 2.0 5.0 10 20 30 lc , COLLECTOR CURRENT (AMP) FIG-S REVERSE BIASE SAFE OPERATING AREA 40 TIP35F 20 TIP36F TIP35E TIP36E TIP36D 10 TIP36D " 0 60 80 100 120 140 460 Vcr , COLLECTOR EMITTER (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ice-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-6 is base on T,=25 C;T yp is variable depending on power level. second breakdown puise limi -ts are valid for duty cycles to 10% but must be derated when T.225C, Second breakdown limitations do not der - ate the same as thermal limitations.