POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
Single Phase PSB 82 IdAVM = 72A
Rectifier Bridges VRRM = 800-1800 V
Preliminary Data Sheet
VRSM
V
VRRM
V
Type
800 800 PSB 82/08
1200 1200 PSB 82/12
1400 1400 PSB 82/14
1600 1600 PSB 82/16
1800 1800 PSB 82/18
Symbol Test Conditions Maximum Ratings
IdAVM TC = 100°C, module 72 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 750 A
VR = 0 t = 8.3 ms (60 Hz), sine 820 A
TVJ = TVJM t = 10 ms (50 Hz), sine 670 A
VR = 0 t = 8.3 ms (60 Hz), sine 740 A
i2 dt TVJ = 45°C t = 10 ms (50 Hz), sine 2800 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 2800 A2 s
TVJ = TVJM t = 10 ms (50 Hz), sine 2250 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 2250 A2 s
TVJ -40 ... + 150 °C
TVJM 150 °C
Tstg -40 ... + 125 °C
VISOL 50/60 HZ, RMS t = 1 min 2500 V
IISOL 1 mA t = 1 s 3000 V
Md Mounting torque (M5) 5 Nm
Terminal connection torque (M5) 5 Nm
Weight typ. 160 g
Symbol Test Conditions Characteristic Value
IR VR = VRRM T
VJ = 25°C 0.3 mA
VR = VRRM T
VJ = TVJM 5 mA
VF IF = 150 A TVJ = 25°C 1.6 V
VTO For power-loss calculations only 0.8 V
rT TVJ = TVJM 5
m
RthJC per diode; DC current 1.1 K/W
per module 0.28 K/W
RthJK per diode; DC current 1.52 K/W
per module 0.38 K/W
dS Creeping distance on surface 10 mm
dA Creeping distance in air 9.4 mm
a Max. allowable acceleration 50 m/s2
Features
Package with screw terminals
Isolation voltage 3000 V
Planar glasspassivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 148688
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
~
~
http://store.iiic.cc/
PSB 82
POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
T = 15C
vj
T = 25°C
vj
20.5 1.5
1
V [V]
F
0
I
F
50
100
200
150
[A]
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
750 670
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
2
3
4
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
Fig. 3 i2dt versus time
(1-10ms) per diode (or thyristor)
70503010
0
25
50
75
100
125
150
175
200 95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.72
1.23
0.73
0.47
0.35 0.22 = RTHCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSB 82
Fig. 4 Power dissipation versus direct output current and ambient
tem
p
erature
50 100 150 200
0
20
40
60
80
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
Fig.5 Maximum forward current
at case tem
p
erature
0.01 0.1 1 10
0.5
1
1.5
2
K/W
Zth
t[s]
ZthJK
ZthJC
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
http://store.iiic.cc/