© 2006 IXYS All rights reserved DS99602E(08/06)
PolarHVTM HiPerFET
Power MOSFET VDSS = 800 V
ID25 =10 A
RDS(on) ≤≤
≤≤
≤500 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤250 ns
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 800 V
VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V
IGSS VGS = ±30 V, VDS = 0 V ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 10 A 500 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ800 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C11A
IDM TC= 25°C, pulse width limited by TJM 60 A
IAR TC= 25°C10A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V DSS, 10 V/ns
TJ≤ 150°C, RG = 3 Ω
PDTC= 25°C 166 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS, t = 1minute, leads-to-tab 2500 V~
FCMounting Force (IXFC) 11..65 / 2.5..15 N/lb
(IXFR) 20..120 / 4.5..25 N/lb
Weight ISOPLUS220 2 g
ISOPLUS247 5 g
IXFC 20N80P
IXFR 20N80P
Electrically Isolated Back Surface
G = Gate D = Drain
S = Source
Features
zSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
zLow drain to tab capacitance(<30pF)
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
Advantages
zEasy assembly
zSpace savings
zHigh power density
Isolated back surface
ISOPLUS220TM (IXFC)
E153432
GDS
ISOPLUS247TM (IXFR)
E153432
Isolated back surface
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFC 20N80P
IXFR 20N80P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = 10 A, pulse test 12 23 S
Ciss 4680 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 360 pF
Crss 28 pF
td(on) 22 ns
trVGS = 10 V, VDS = VDSS , ID = 10 A 24 ns
td(off) RG= 3 Ω (External) 70 ns
tf25 ns
Qg(on) 85 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 25 nC
Qgd 27 nC
RthJC 0.75 °C/W
RthCS 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 20 A
ISM Repetitive 60 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr IF = 20A, -di/dt = 100 A/μs 250 ns
IRM VR = 100 V; VGS = 0 V 8 A
QRM 0.8 μC
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
ISOPLUS220 (IXFC) Outline
IXYS CO 0177 R0
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
ISOPLUS247 (IXFR) Outline
© 2006 IXYS All rights reserved
IXFC 20N80P
IXFR 20N80P
Fig. 2. Extended Output Character istics
@ 25
º
C
0
4
8
12
16
20
24
28
32
36
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Am peres
V
GS
= 10V
7V
5V
6V
Fig . 3. Outp ut Charac teristics
@ 125
º
C
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 810121416182022
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Character istics
@ 25
º
C
0
2
4
6
8
10
12
14
16
18
20
024681012
V
D S
- Volts
I
D
- Am peres
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 10A
Value vs. Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degr ees Centigrade
R
D S ( o n )
- No rmalize d
I
D
= 20 A
I
D
= 10 A
V
GS
= 10V
Fig. 5. R
DS(on)
Normalized to
I
D
= 10A Valu e vs. Drain Cu rren t
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 5 10 15 20 25 30 35 40
I
D
- Amperes
R
D S ( o n )
- N orm al ize d
T
J
= 12 5
º
C
T
J
= 25
º
C
V
GS
= 10 V
Fig. 6. Drain Current v s. Ca se
Temperature
0
1
2
3
4
5
6
7
8
9
10
11
12
-50 -25 0 25 50 75 100 125 150
T
C
- Degr ees Centigrade
I
D
- Am peres
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFC 20N80P
IXFR 20N80P
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
VD S - V olts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Char ge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090
Q G - nanoCoulombs
VG S - Vo lts
V
DS
= 400V
I
D
= 10A
I
G
= 10m A
Fig. 7. Input Admittance
0
4
8
12
16
20
24
3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 5.75
VG S - Volts
I D - Amp eres
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25
I D
- Amperes
g
f s
- Si eme ns
T
J
= -4 0
º
C
25
º
C
125
º
C
Fig. 9. Source Curre nt vs.
Sour ce-To-Dr ain V oltage
0
10
20
30
40
50
60
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VS D - Volts
I S - Amp eres
T
J
= 12 5
º
C
T
J
= 25
º
C
Fig. 12. Maximu m Transient Thermal
Resistance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
( t h ) J C
-
º
C / W
IXYS REF: F_20N80P (7J) 8-23-06B
