TLP352F(D4,F) - Toshiba - Product.Network

TLP352

Photocouplers GaAℓAs Infrared LED & Photo IC

TLP352

Start of commercial production

2011-05

1. Applications

Applications

• Transistor Inverters

• MOSFET Gate Drivers

• IGBT Gate Drivers

• Induction Cooktop and Home Appliances

2. General

General

The TLP352 is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED)

optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance

and specifications at temperatures up to 125.

The TLP352 has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of

20 kV/µs. It has a totem-pole output that can both sink and source current. The TLP352 is ideal for IGBT and

power MOSFET gate drive.

3. Features

Features

(1) Buffer logic type (totem pole output)

(2) Output peak current: ±2.5 A (max)

(3) Operating temperature: -40 to 125

(4) Supply current: 3 mA (max)

(5) Supply voltage: 15 to 30 V

(6) Threshold input current: 5 mA (max)

(7) Propagation delay time: tpHL/tpLH = 200 ns (max)

(8) Common-mode transient immunity: ±20 kV/µs (min)

(9) Isolation voltage: 3750 Vrms (min)

(10) Safety standards

UL-approved: UL1577 File No.E67349

cUL-approved: CSA Component Acceptance Service No.5A, File No.E67349

VDE-approved: Option (D4) EN60747-5-5(Note)

(Note): When an EN60747-5-5 approved type is needed, please designate the Option (D4).

2014-03-10

Rev.4.0

TLP352

4. Packaging and Pin Configuration

Packaging and Pin Configuration

11-10C4S

1: N.C.

2: Anode

3: Cathode

4: N.C.

5: GND

6: VO(Output)

7: N.C.

8: VCC

5. Internal Circuit (Note)

Internal Circuit (Note)

Fig.

Fig. 5.1

5.1

5.1 Internal Circuit

Internal Circuit

Note: A 0.1-µF bypass capacitor must be connected between pin 8 and pin 5.

6. Principle of Operation

Principle of Operation

6.1.

6.1. Truth Table

Truth Table

Input

LED

OFF

Output

6.2.

6.2. Mechanical Parameters

Mechanical Parameters

Characteristics

Creepage distances

Clearance distances

Internal isolation thickness

7.62-mm Pitch

TLP352

7.0 (min)

0.4 (min)

10.16-mm Pitch

TLP352F

8.0 (min)

0.4 (min)

Unit

2014-03-10

Rev.4.0

TLP352

7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta

a = 25

= 25

= 25



)

)

LED

Detector

Common

Characteristics

Input forward current

Input forward current derating

Peak transient input forward

current

Peak transient input forward

current derating

Input reverse voltage

Input power dissipation

derating

Peak high-level output current

Peak low-level output current

Output voltage

Supply voltage

Output power dissipation

derating

Operating temperature

Storage temperature

Lead soldering temperature

Isolation voltage

(Ta ≥ 116)

(Ta ≥ 110)

(Ta = -40 to 125)

(Ta ≥ 110)

(10 s)

AC, 60 s,

R.H. ≤ 60%, Ta = 25

Symbol

∆IF/∆Ta

IFPT

∆IFPT/∆Ta

∆PD/∆Ta

IOPH

IOPL

VCC

∆PO/∆Ta

Topr

Tstg

Tsol

BVS

Note

(Note 1)

(Note 2)

(Note 3)

(Note 4)

Rating

-0.6

-25

-1.0

-2.5

+2.5

260

-6.5

-40 to 125

-55 to 150

260

3750

Unit

mA/

mW/



Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Pulse width (PW) ≤ 1 µs, 300 pps

Note 2: Exponential waveform. Pulse width ≤ 0.3 µs, f ≤ 15 kHz

Note 3: ≥ 2 mm below seating plane.

Note 4: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7

and 8 are shorted together.

2014-03-10

Rev.4.0

TLP352

8. Recommended Operating Conditions (Note)

Recommended Operating Conditions (Note)

Characteristics

Input on-state current

Input off-state voltage

Supply voltage

Peak high-level output current

Peak low-level output current

Operating frequency

Symbol

IF(ON)

VF(OFF)

VCC

IOPH

IOPL

Note

(Note 1)

(Note 2)

(Note 3)

Min

6.5



Typ.



Max

0.8

-2.0

+2.0

Unit

kHz

Note: The recommended operating conditions are given as a design guide necessary to obtain the intended

performance of the device. Each parameter is an independent value. When creating a system design using

this device, the electrical characteristics specified in this datasheet should also be considered.

Note: A ceramic capacitor (0.1 µF) should be connected between pin 8 and pin 5 to stabilize the operation of a high-

gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be

placed within 1 cm of each pin.

Note: If the rising slope of the supply voltage(VCC) for the detector is steep,stable operation of the internal circuits

cannot be guaranteed.

Be sure to set 3.0 V/µs or less for a rising slope of the VCC.

Note 1: The rise and fall times of the input on-current should be less than 0.5 µs.

Note 2: Denotes the operating range, not the recommended operating condition.

Note 3: Exponential waveform. IOPH ≥ -2.0 A (≤ 0.3 µs), IOPL ≤ 2.0 A (≤ 0.3 µs), Ta = 125

9. Electrical Characteristics (Note)(Unless otherwise specified, T

Electrical Characteristics (Note)(Unless otherwise specified, T

Electrical Characteristics (Note)(Unless otherwise specified, Ta

a = -40 to 125

= -40 to 125

= -40 to 125



)

)

Characteristics

Input forward voltage

temperature coefficient

Input reverse current

Input capacitance

Peak high-level output current

Peak low-level output current

High-level output voltage

Low-level output voltage

High-level supply current

Low-level supply current

Threshold input current (L/H)

Threshold input voltage (H/L)

Supply voltage

UVLO threshold voltage

UVLO hysteresis

Symbol

∆VF/∆Ta

IOPH

IOPL

VOH

VOL

ICCH

ICCL

IFLH

VFHL

VCC

VUVLO+

VUVLO-

UVLOHYS

Note

(Note 1)

Test

Circuit

Fig.

12.1.1

Fig.

12.1.2

Fig.

12.1.3

Fig.

12.1.4

Fig.

12.1.5

Fig.

12.1.6

Test Condition

IF = 10 mA, Ta = 25

IF = 10 mA

VR = 5 V, Ta = 25

V = 0 V, f = 1 MHz, Ta = 25

IF = 5 mA, VCC = 30 V,

V8-6 = -3.5 V

IF = 5 mA, VCC = 15 V,

V8-6 = -7.0 V

IF = 0 mA, VCC = 30 V,

V6-5 = 2.5 V

IF = 0 mA, VCC = 15 V,

V6-5 = 7.0 V

IF = 5 mA, RL = 200 Ω,

VCC1 = +15 V, VEE1 = -15 V

VF = 0.8 V, RL = 200 Ω,

VCC1 = +15 V, VEE1 = -15 V

IF = 10 mA, VCC = 30 V,

VO = Open

IF = 0 mA, VCC = 30 V,

VO = Open

VCC = 15 V, VO > 1 V

VCC = 15 V, VO < 1 V



IF = 5 mA , VO > 2.5 V

IF = 5 mA, VO < 2.5 V



Min

1.4



1.0

2.0

11.0



0.8

11.0

9.5



Typ.

1.55

-2.0



-1.6



1.6



13.7

-14.9

1.5

1.0



12.5

11.0

1.5

Max

1.7



-1.0

-2.0



-12.5

3.0



13.5

12.0



Unit

mV/

µA

Note: All typical values are at Ta = 25.

Note: This device is designed for low power consumption, making it more sensitive to ESD than its predecessors.

Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems.

Note 1: IO application time ≤ 50 µs, single pulse.

2014-03-10

Rev.4.0

TLP352

10.

10. Isolation Characteristics (Unless otherwise specified, T

Isolation Characteristics (Unless otherwise specified, T

Isolation Characteristics (Unless otherwise specified, Ta

a = 25

= 25

= 25



)

)

Characteristics

Total capacitance (input to output)

Isolation resistance

Isolation voltage

Symbol

BVS

Note

(Note 1)

Test Conditions

VS = 0 V, f = 1 MHz

VS = 500 V, R.H. ≤ 60%

AC, 60 s

AC, 1 s, in oil

DC, 60 s, in oil

Min



1×1012

3750



Typ.

1.0

1014



10000

Max



Unit

Ω

Vrms

Vdc

Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7

and 8 are shorted together.

11.

11. Switching Characteristics (Note)(Unless otherwise specified, T

Switching Characteristics (Note)(Unless otherwise specified, T

Switching Characteristics (Note)(Unless otherwise specified, Ta

a = -40 to 125

= -40 to 125

= -40 to 125



)

)

Characteristics

Propagation delay time

(L/H)

Propagation delay time

(H/L)

Pulse width distortion

Propagation delay skew

(device to device)

Rise time

Fall time

Common-mode transient

immunity at output high

Common-mode transient

immunity at output low

Symbol

tpLH

tpHL

|tpHL-tpLH|

tpsk

CMH

CML

Note

(Note 1)

(Note 4)

(Note 1)

(Note 2)

(Note 3)

Test

Circuit

Fig.

12.1.7

Fig.

12.1.8

Test Condition

IF = 0 → 5 mA, VCC = 30 V,

Rg = 20 Ω, Cg = 10 nF

IF = 5 → 0 mA, VCC = 30 V,

Rg = 20 Ω, Cg = 10 nF

IF = 0 ←→ 5 mA, VCC = 30 V,

Rg = 20 Ω, Cg = 10 nF

IF = 0 ←→ 5 mA, VCC = 30 V,

Rg = 20 Ω, Cg = 10 nF

IF = 0 → 5 mA, VCC = 30 V,

Rg = 20 Ω, Cg = 10 nF

IF = 5 → 0 mA, VCC = 30 V,

Rg = 20 Ω, Cg = 10 nF

VCM = 1000 Vp-p, IF = 5 mA,

VCC = 30 V, Ta = 25,

VO(min) = 26 V

VCM = 1000 Vp-p, IF = 0 mA,

VCC = 30 V, Ta = 25,

VO(max) = 1 V

Min



-80



±20

Typ.

130



±25

Max

200



Unit

kV/µs

Note: All typical values are at Ta = 25.

Note 1: Input signal ( f = 25 kHz, duty = 50%, tr = tf = 5 ns or less ).

CL is approximately 15 pF which includes probe and stray wiring capacitance.

Note 2: CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage

in the logic high state (VO > 26 V).

Note 3: CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in

the logic low state (VO < 1 V).

Note 4: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or tpLH

that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc).

2014-03-10

Rev.4.0

TLP352

12.

12. Test Circuits and Characteristics Curves

Test Circuits and Characteristics Curves

12.1.

12.1. Test Circuits

Test Circuits

Fig.

Fig. 12.1.1

12.1.1

12.1.1 I

IOPH

OPH

OPH Test Circuit

Test Circuit

Test Circuit Fig.

Fig.

Fig. 12.1.2

12.1.2

12.1.2 I

IOPL

OPL

OPL Test Circuit

Test Circuit

Fig.

Fig. 12.1.3

12.1.3

12.1.3 V

VOH

OH Test Circuit

Test Circuit

Test Circuit Fig.

Fig.

Fig. 12.1.4

12.1.4

12.1.4 V

VOL

OL Test Circuit

Test Circuit

Fig.

Fig. 12.1.5

12.1.5

12.1.5 I

ICCH

CCH

CCH Test Circuit

Test Circuit

Test Circuit Fig.

Fig.

Fig. 12.1.6

12.1.6

12.1.6 I

ICCL

CCL

CCL Test Circuit

Test Circuit

Fig.

Fig. 12.1.7

12.1.7

12.1.7 Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 12.1.8

12.1.8

12.1.8 Common-Mode Transient Immunity

Common-Mode Transient Immunity

2014-03-10

Rev.4.0

TLP352

12.2.

12.2. Characteristics Curves (Note)

Characteristics Curves (Note)

Fig.

Fig. 12.2.1

12.2.1

12.2.1 I

F - V

- V

- VF

FFig.

Fig.

Fig. 12.2.2

12.2.2

12.2.2 I

F - T

- T

- Ta

Fig.

Fig. 12.2.3

12.2.3

12.2.3 P

O - T

- T

- Ta

aFig.

Fig.

Fig. 12.2.4

12.2.4

12.2.4 I

IFLH

FLH

FLH - T

- T

- Ta

Fig.

Fig. 12.2.5

12.2.5

12.2.5 I

ICCL

CCL

CCL - T

- T

- Ta

aFig.

Fig.

Fig. 12.2.6

12.2.6

12.2.6 I

ICCH

CCH

CCH - T

- T

- Ta

2014-03-10

Rev.4.0

TLP352

Fig.

Fig. 12.2.7

12.2.7

12.2.7 V

VOL

OL - T

- T

- Ta

aFig.

Fig.

Fig. 12.2.8

12.2.8

12.2.8 V

VOH

OH - T

- T

- Ta

Fig.

Fig. 12.2.9

12.2.9

12.2.9 V

VOL

OL - I

- I

- IOPL

OPL

OPL Fig.

Fig.

Fig. 12.2.10

12.2.10

12.2.10 (V

(VOH

OH-V

-V

-VCC

CC) - I

) - I

) - IOPH

OPH

Fig.

Fig. 12.2.11

12.2.11

12.2.11 V

O(V

(VUVLO

UVLO

UVLO) - V

) - V

) - VCC

CC Fig.

Fig.

Fig. 12.2.12

12.2.12

12.2.12 t

tpLH

pLH

pLH,t

,tpHL

pHL

pHL,|t

,|t

,|tpHL

pHL

pHL-t

-t

-tpLH

pLH

pLH| - T

| - T

| - Ta

2014-03-10

Rev.4.0

TLP352

Fig.

Fig. 12.2.13

12.2.13

12.2.13 t

tpLH

pLH

pLH,t

,tpHL

pHL

pHL,|t

,|t

,|tpHL

pHL

pHL-t

-t

-tpLH

pLH

pLH| - I

| - I

| - IF

FFig.

Fig.

Fig. 12.2.14

12.2.14

12.2.14 t

tpLH

pLH

pLH,t

,tpHL

pHL

pHL,|t

,|t

,|tpHL

pHL

pHL-t

-t

-tpLH

pLH

pLH| - V

| - V

| - VCC

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2014-03-10

Rev.4.0

TLP352

13.

13. Soldering and Storage

Soldering and Storage

13.1.

13.1. Precautions for Soldering

Precautions for Soldering

The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective

of whether a soldering iron or a reflow soldering method is used.

• When using soldering reflow (See Fig. 13.1.1 and 13.1.2)

Reflow soldering must be performed once or twice.

The mounting should be completed with the interval from the first to the last mountings being 2 weeks.

Fig.

Fig. 13.1.1

13.1.1

13.1.1 An example of a temperature profile

An example of a temperature profile

when Sn-Pb eutectic solder is used

Fig.

Fig. 13.1.2

13.1.2

13.1.2 An example of a temperature profile

An example of a temperature profile

when lead(Pb)-free solder is used

• When using soldering flow (Applicable to both eutectic solder and Lead(Pb)-Free solder)

Apply preheating of 150 for 60 to 120 seconds.

Mounting condition of 260 within 10 seconds is recommended.

Flow soldering must be performed once.

• When using soldering Iron (Applicable to both eutectic solder and Lead(Pb)-Free solder)

Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not

exceeding 350

Heating by soldering iron must be done only once per lead.

13.2.

13.2. Precautions for General Storage

Precautions for General Storage

• Avoid storage locations where devices may be exposed to moisture or direct sunlight.

• Follow the precautions printed on the packing label of the device for transportation and storage.

• Keep the storage location temperature and humidity within a range of 5 to 35 and 45% to 75%,

respectively.

• Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty

conditions.

• Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during

storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the

solderability of the leads.

• When restoring devices after removal from their packing, use anti-static containers.

• Do not allow loads to be applied directly to devices while they are in storage.

• If devices have been stored for more than two years under normal storage conditions, it is recommended

that you check the leads for ease of soldering prior to use.

2014-03-10

Rev.4.0

TLP352

14.

14. Marking

Marking

Fig.

Fig. 14.1

14.1

14.1 Marking

Marking

2014-03-10

Rev.4.0

TLP352

Package Dimensions

Unit: mm

Weight: 0.54 g (typ.)

Package Name(s)

TOSHIBA: 11-10C4S

2014-03-10

Rev.4.0

TLP352

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• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively "Product") without notice.

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written permission, reproduction is permissible only if reproduction is without alteration/omission.

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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which

minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage

to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate

the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA

information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the

precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application

with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,

including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating

and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample

application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.

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Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.

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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2014-03-10

Rev.4.0

Mouser Electronics

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