© IXYS All rights reserved 1 - 2
20100706b
VBO 13
IXYS reserves the right to change limits, test conditions and dimensions.
IdAV = 18 A
VRRM = 800-1600 V
Single Phase Rectifier Bridge
Standard and Avalanche Types
Features
• Avalanche rated parts available
• Package with DCB ceramic base plate
• Isolation voltage 3600 V~
• Planar passivated chips
• Low forward voltage drop
• ¼" fast-on terminals
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature & power cycling
Symbol Conditions Maximum Ratings
IdAV
IdAVM
PRSM
TC = 85°C, module
module
TVJ = TVJM
18
30
2.5
A
A
kW
IFSM TVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
220
230
A
A
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
180
190
A
A
I2tTVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
240
220
A2s
A2s
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
160
150
A2s
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL < 1 mA t = 1 s
3000
3600
V~
V~
MdMounting torque (M5)
(10-32 UNF)
1.5-2
13-18
Nm
lb.in.
Weight Typ. 15 g
VRSM VBRminVRRM Standard Avalanche
V V V Types Types
900 800 VBO 13-08NO2
1300 1230 1200 VBO 13-12NO2 VBO 13-12AO2
1700 1630 1600 VBO 13-16NO2 VBO 13-16AO2
Symbol Conditions Characteristic Values
IRVR = VRRM TVJ = 25°C
TVJ = TVJM
0.3
5.0
mA
mA
VFIF = 55 A TVJ = 25°C 1.8 V
VT0
rt
For power-loss calculations only 0.85
17
V
mW
RthJC
RthJH
per diode; 120° el.
per module
per diode; 120° el.
per module
5.60
1.40
6.00
1.50
K/W
K/W
K/W
K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
13
9.5
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
for resistive load at bridge output
with isolated fast-on tabs.
+
~
~
-
+
-
~
~
Dimensions in mm (1 mm = 0.0394“)
For Avalanche Types only
© IXYS All rights reserved 2 - 2
20100706b
VBO 13
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 1 Surge overload current per diode
IFSM: Crest value, t: duration
Fig. 2 I2t versus time (1-10 ms)
per diode
Fig. 3 Max. forward current at case
temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Transient thermal impedance junction to heatsink per diode
Constants for ZthJK calculation:
i Rthi (K/W) ti (s)
1 0.059 0.00217
2 2.714 0.159
3 3.227 2.34
