MS1509 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features * * * * * * * 500 MHz 28 VOLTS POUT = 100 WATTS GP = 5.5 dB GAIN MINIMUM EFFICIENCY 55% GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1509 is a 28 V gold metallized, Class C epitaxial silicon NPN planar transistor designed for UHF military and commercial equipment. The MS1508 is an internally matched, broadband device optimized for operation within the 100 - 500 MHz frequency range. This device utlizies diffused emitter resistors to achieve 5:1 VSWR load mismatch capability at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 60 33 60 4.0 15 260 +200 -65 to +150 V V V V A W C C 0.67 C/W Thermal Data RTH(J-C) Thermal Resistance Junction-case 053-7090 Rev - 10-2002 MS1509 ELECTRICAL SPECIFICATIONS (Tcase = 25 25C) STATIC Symbol BVCBO BVCES BVCEO BVEBO ICBO HFE Test Conditions IC = 100 mA IC = 80 mA IC = 50 mA IE = 20 mA VCB = 30 V VCE = 5 V IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 1 mA Min. Value Typ. Max. Unit 60 60 33 4.0 --20 ------------- --------10 --- V V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 500 MHz PIN =28.2 W VCC = 28 V 100 --- --- W GP f = 500 MHz PIN = 28.2 W VCC = 28 V 5.5 --- --- dB C f = 500 MHz PIN = 28.2 W VCC = 28 V 55 --- --- % 053-7090 Rev - 10-2002 MS1509 PACKAGE MECHANICAL DATA 053-7090 Rev - 10-2002