© 2004 IXYS All rights reserved
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C40A
IC110 TC= 110°C16A
ID110 TC= 110°C (IXG_16N60C2D1 diode) 11 A
ICM TC= 25°C, 1 ms 100 A
SSOA VGE = 15 V, TJ = 125°C, RG = 22 Ω ICM = 32 A
(RBSOA) Clamped inductive load @0.8 VCES
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (M3.5 screw) 0.55/5 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature 260 °C
soldering SMD devices for 10s
Weight TO-220 4 g
TO-263 2 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC = 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES 16N60C2 25 µA
VGE = 0 V 16N60C2D1 50 µA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC = 12 A, VGE = 15 V 3.0 V
Note 2 TJ=125°C 2.1 V
DS99142A(3/04)
HiPerFASTTM IGBT
C2-Class High Speed
IGBT
IXGA 16N60C2
IXGP 16N60C2
IXGA 16N60C2D1
IXGP 16N60C2D1
VCES = 600 V
IC25 =40A
VCE(sat) = 3.0 V
tfi(typ) =35ns
D1
TO-220 (IXGP)
GCE
C (TAB)
C (TAB)
G
C
TO-263 (IXGA)
Advance Technical Information
Features
zVery high frequency IGBT
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
Applications
zPFC circuits
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zAC motor speed control
zDC servo and robot drives
zDC choppers
Advantages
zHigh power density
zVery fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGP 16N60C2 IXGA 16N60C2D1
IXGA 16N60C2 IXGA 16N60C2D1
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 10 A, VGE = 0 V 2.66 V
TJ = 125 °C 1.66
IRM IF = 12 A; -diF/dt = 100 A/µs, VR = 100 V 2.5 A
trr VGE = 0 V; TJ = 125 °C 110 ns
trr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 30 ns
RthJC 2.5 K/W
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 12A; VCE = 10 V, 8 12 S
Note 2.
Cies VCE = 25 V, VGE = 0 V, f = 1 MHz 720 pF
Coes 16N60C2 55 pF
16N60C2D1 65 pF
Cres 19 pF
QgIC = 20A, VGE = 15 V, VCE = 0.5 VCES 32 nC
Qge 6nC
Qgc 10 nC
td(on) 25 ns
tri 15 ns
td(off) 60 120 ns
tfi 35 ns
Eoff 60 100 µJ
td(on) 25 ns
tri 18 ns
Eon 16N60C2D1 0.38 mJ
td(off) 120 ns
tfi 70 ns
Eoff 150 µJ
RthJC 0.83 K/W
RthCK (IXGP) 0.5 K/W
Inductive load, TJ = 125°°
°°
°C
IC = 12A; VGE = 15 V
VCE = 400 V; RG = Roff = 22 Ω
Note 1
Inductive load, TJ = 25°°
°°
°C
IC = 12 A; VGE = 15 V
VCE = 400 V; RG = Roff = 22 Ω
Note 1.
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ,
or increased RG.
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Pins: 1 - Gate 2 - Collector
3 - Emitter 4 - Collector
TO-220 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
TO-263 Outline
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