APTGF330DA60D3 - Advanced Power Technologies

APTG

F

330

D

A60D

3

APTGF330DA60D3 – Rev 0 July, 2003

APT website – http://www.advancedpower.com

1

-

3

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 600 V

T

C

= 25°C 460

I

C

Continuous Collector Current T

C

= 80°C 330

I

CM

Pulsed Collector Current T

C

= 25°C 800

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation T

C

= 25°C 1400 W

RBSOA Reverse Bias Safe Operation Area T

j

= 125°C 800A@420V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

23

5

4

6

7

1

VCES = 600V

IC = 330A @ Tc = 80°C

Application

• AC and DC motor control

• Switched Mode Power Supplies

• Power Factor Correction

Features

• Non Punch Through (NPT) fast IGBT

- Low voltage drop

- Low tail current

- Switching frequency up to 50 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- Avalanche energy rated

- RBSOA and SCSOA rated

• Kelvin emitter for easy drive

• Low stray inductance

- M6 power connectors

• High level of integration

Benefits

• Outstanding performance at high frequency

operation

• Stable temperature behavior

• Very rugged

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Easy paralleling due to positive TC of VCEsat

Boost Chopper

N

PT IGBT Power Module

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APTG

F

330

D

A60D

3

APTGF330DA60D3 – Rev 0 July, 2003

APT website – http://www.advancedpower.com

2

-

3

Electrical Characteristics All ratings @ T

j

= 25°C unless otherwise specified

Symbol

Characteristic Test Conditions Min Typ Max Unit

BV

CES

Collector - Emitter Breakdown Voltage V

GE

= 0V, I

C

= 10 mA 600 V

T

j

= 25°C 2 750 µA

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V

V

CE

= 600V T

j

= 125°C 1.5 mA

T

j

= 25°C 2.0 2.5

V

CE(on)

Collector Emitter on Voltage V

GE

= 15V

I

C

= 400A T

j

= 125°C 2.2 V

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 8 mA 4.5 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 600 nA

Dynamic Characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 18

C

res

Reverse Transfer Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1MHz 1.6 nF

T

d(on)

Turn-on Delay Time 165

T

r

Rise Time 40

T

d(off)

Turn-off Delay Time 250

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 400A

R

G

= 0.82Ω 35

ns

T

d(on)

Turn-on Delay Time 180

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 285

T

f

Fall Time 40

ns

E

off

Turn off energy

Inductive Switching (125°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 400A

R

G

= 0.82Ω

13 mJ

Reverse diode ratings and characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

T

j

= 25°C 1.25 1.6

V

F

Diode Forward Voltage I

F

= 400A

V

GE

= 0V T

j

= 125°C 1.2 V

E

r

Reverse Recovery Energy I

F

= 400A

V

R

= 300V

di/dt =900A/µs T

j

= 125°C 8.2 mJ

T

j

= 25°C 24

Q

rr

Reverse Recovery Charge I

F

= 400A

V

R

= 300V

di/dt =900A/µs

T

j

= 125°C 40 µC

Thermal and package characteristics

Symbol

Characteristic Min Typ Max Unit

IGBT 0.089

R

thJC

Junction to Case Diode 0.15 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min,

I isol<1mA, 50/60Hz 2500 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 125

°C

For terminals M6 3 5

Torque Mounting torque To Heatsink M6 3 5 N.m

Wt Package Weight 380 g

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APTG

F

330

D

A60D

3

APTGF330DA60D3 – Rev 0 July, 2003

APT website – http://www.advancedpower.com

3

-

3

Package outline

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

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