A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V(BR)DSS 30V Features and Benefits * * * * * * ID Max (Note 5) Max RDS(on) TA = 25C 460m @ VGS= 4.5V 0.94A 560m @ VGS= 2.5V 0.85A Low VGS(th), can be driven directly from a battery Low RDS(on) "Lead Free", RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish-Matte Tin. Weight: 0.08 grams (approximate) * * * Load switch Portable applications Power Management Functions Drain SOT23 Gate Gate Protection Diode Source S G Equivalent Circuit Top View ESD PROTECTED TO 2kV D Body Diode Top View Pin-Out Ordering Information (Note 3) Part Number DMN3730U-7 Notes: Marking N3U Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year Code Month Code 2011 Y Jan 1 YM N3U 2012 Z Feb 2 DMN3730U Datasheet number: DS35308 Rev. 2 - 2 Mar 3 N3U = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 7 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D July 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730U Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current Symbol VDSS VGSS Value 30 8 Unit V V ID 0.94 0.68 0.75 A IDM 10 A Symbol Value 0.45 0.71 275 177 -55 to +150 Unit W W C/W C/W C TA = 25C (Note 5) TA = 85C (Note 5) TA = 25C (Note 4) Pulsed Drain Current (Note 6) Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Ambient (Note 4) (Note 5) (Note 4) (Note 5) PD RJA Operating and Storage Temperature Range Notes: TJ, TSTG 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. Thermal Characteristics 100 RDS(ON) Limited Single Pulse Rthja = 176C/W Rthja(t) = Rthja*r(t) TJ - TA = P*Rthja (t) 90 80 70 60 50 40 30 1 10 DMN3730U Datasheet number: DS35308 Rev. 2 - 2 ID (A) @ PW = 100ms ID (A) @ DC 0.01 0.01 0.1 1 10 100 1000 T1, PULSE DURATION SECTION (sec) Fig. 1 Single Maximum Power Dissipation ID (A) @ PW = 100s ID (A) @ PW = 10ms 0.1 20 0 0.001 ID (A) @ PW = 1ms 10 ID, DRAIN CURRENT (A) P(pk), PEAK TRANSIENT POWER (W) 100 0.001 0.01 2 of 7 www.diodes.com ID (A) @ PW = 10s ID (A) @ PW = 1s TJ , (Max) = 150C TA = 25C Single Pulse 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE Fig. 2 SOA, Safe Operation Area 100 July 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730U R(t), TRANSIENT THERMAL RESISITANCE 1 r(t) @ D=0.5 r(t) @ D=0.9 r(t) @ D=0.3 0.1 r(t) @ D=0.7 r(t) @ D=0.1 r(t) @ D=0.05 0.01 r(t) @ D=0.01 r(t) @ D=0.01 R JA (t) = r(t)*R JA R JA = 176C/W Duty Cycle, D = t1/t2 r(t) @ D=0.005 r(t) @ D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 10 100 1000 Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 3 V A A VGS = 0V, ID = 10A VDS = 30V, VGS = 0V VGS = 8V, VDS = 0V VGS(th) 0.45 - V Static Drain-Source On-Resistance (Note 7) RDS(on) - - |Yfs| VSD 40 - 0.7 0.95 460 560 730 1.2 VDS = VGS, ID = 250A VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA VGS = 1.8V, ID = 75mA VDS = 3V, ID = 10mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 64.3 6.1 4.5 70 1.6 0.2 0.2 3.5 2.8 38 13 - Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: m mS V pF pF pF nC nC nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6 7. Measured under pulsed conditions to minimize self-heating effect. Pulse width 300s; duty cycle 2% 8. For design aid only, not subject to production testing. DMN3730U Datasheet number: DS35308 Rev. 2 - 2 3 of 7 www.diodes.com July 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730U 2.0 2.0 VGS = 10V VGS = 4.5V VDS = 5V 1.5 VGS = 2.5V ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VGS = 3.0V VGS = 2.0V VGS = 1.5V 1.0 0.5 1.5 1.0 0.5 TA = 150C TA = 85C TA = 125C T A = 25C TA = -55C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic 5 0.8 0.6 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 2 RDSON , DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 4.5V ID = 1.0A 1.4 VGS = 2.5V ID = 500mA 1.2 1.0 0.8 0.6 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 8 On-Resistance Variation with Temperature DMN3730U Datasheet number: DS35308 Rev. 2 - 2 4 of 7 www.diodes.com 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic 3 0.8 VGS = 4.5V 0.6 T A = 150C T A = 125C TA = 85C 0.4 TA = 25C TA = -55C 0.2 0 0 0.25 0.5 0.75 1 1.25 ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 1.5 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 9 On-Resistance Variation with Temperature July 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730U 2.0 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 0.8 ID = 1mA 0.6 ID = 250A 0.4 1.6 TA = 25C 1.2 0.8 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 10,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) Ciss Coss 10 Crss TA = 150C 1,000 TA = 125C 100 TA = 85C 10 TA = 25C f = 1MHz 1 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Total Capacitance 30 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics DMN3730U Datasheet number: DS35308 Rev. 2 - 2 3 5 of 7 www.diodes.com July 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730U Package Outline Dimensions A B C H K J M K1 D F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Y Z C X DMN3730U Datasheet number: DS35308 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 6 of 7 www.diodes.com July 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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